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    • 8. 发明授权
    • Bumpless semiconductor device
    • 无铅半导体器件
    • US07638876B2
    • 2009-12-29
    • US11486075
    • 2006-07-14
    • Yukio YamadaMasayuki NakamuraHiroyuki Hishinuma
    • Yukio YamadaMasayuki NakamuraHiroyuki Hishinuma
    • H01L23/48
    • H01L21/563H01L21/4853H01L24/11H01L24/13H01L2224/05571H01L2224/05573H01L2224/11003H01L2224/11332H01L2224/13099H01L2224/131H01L2224/73203H01L2924/0001H01L2924/01004H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01029H01L2924/01033H01L2924/01078H01L2924/01079H01L2924/014H01L2924/07802H01L2924/07811H01L2924/14H01L2924/00015H01L2924/00H01L2224/05624H01L2924/00014
    • When connecting a semiconductor device such as an IC chip with a circuit board by the flip-chip method, a semiconductor device is provided without forming bumps thereon, which enables highly reliable and low cost connection between the IC chip and circuit board while ensuring suppressing short-circuiting, lowering connection costs, suppressing stress concentrations at the joints and reducing damage of the IC chip or circuit board. The bumpless semiconductor device is provided with electrode pads 2 on the surface thereof and with a passivation film 3 at the periphery of the electrode pads 2, and conductive particles 4 are metallically bonded to the electric pads 2. Composite particles in which a metallic plating layer is formed at the surface of resin particles are employed as the conductive particles 4. This bumpless semiconductor device can be manufactured by (a) causing conductive particles to be electrostatically adsorbed onto one face of a flat plate; and (b) overlaying the surface of the plate having the adsorbed conductive particles on the surface of electrode pads of a bumpless semiconductor device which is provided with the electrode pads on the surface thereof and with a passivation film at the periphery of the electrode pads, and ultrasonically welding this assembly, so that the conductive particles are metallically bonded and transferred from the flat plate to the electrode pads.
    • 当通过倒装芯片方法将诸如IC芯片的半导体器件与电路板连接时,提供半导体器件而不在其上形成凸块,这使得IC芯片和电路板之间可以实现高可靠性和低成本的连接,同时确保抑制短路 电路,降低连接成本,抑制接头处的应力集中,降低IC芯片或电路板的损坏。 无电解半导体器件在其表面上设置有电极焊盘2,并且在电极焊盘2的周围具有钝化膜3,并且导电颗粒4金属地结合到电焊盘2.复合颗粒,其中金属镀层 形成在树脂粒子表面的导电粒子4.这种无凸起的半导体器件可以通过(a)使导电粒子静电吸附在平板的一个面上来制造; 和(b)将具有吸附的导电颗粒的板的表面覆盖在其表面上设置有电极焊盘的无扰动半导体器件的电极焊盘的表面上,并且在电极焊盘的周围具有钝化膜, 并且超声波焊接该组件,使得导电颗粒被金属地结合并从平板转移到电极焊盘。
    • 10. 发明授权
    • Bumpless semiconductor device
    • 无铅半导体器件
    • US07109058B2
    • 2006-09-19
    • US10467638
    • 2002-02-18
    • Yukio YamadaMasayuki NakamuraHiroyuki Hishinuma
    • Yukio YamadaMasayuki NakamuraHiroyuki Hishinuma
    • H01L21/44
    • H01L21/563H01L21/4853H01L24/11H01L24/13H01L2224/05571H01L2224/05573H01L2224/11003H01L2224/11332H01L2224/13099H01L2224/131H01L2224/73203H01L2924/0001H01L2924/01004H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01029H01L2924/01033H01L2924/01078H01L2924/01079H01L2924/014H01L2924/07802H01L2924/07811H01L2924/14H01L2924/00015H01L2924/00H01L2224/05624H01L2924/00014
    • When connecting a semiconductor device such as an IC chip with a circuit board by the flip-chip method, a semiconductor device is provided without forming bumps thereon, which enables highly reliable and low cost connection between the IC chip and circuit board while ensuring suppressing short-circuiting, lowering connection costs, suppressing stress concentrations at the joints and reducing damage of the IC chip or circuit board. The bumpless semiconductor device is provided with electrode pads 2 on the surface thereof and with a passivation film 3 at the periphery of the electrode pads 2, and conductive particles 4 are metallically bonded to the electric pads 2. Composite particles in which a metallic plating layer is formed at the surface of resin particles are employed as the conductive particles 4. This bumpless semiconductor device can be manufactured by (a) causing conductive particles to be electrostatically adsorbed onto one face of a flat plate; and (b) overlaying the surface of the plate having the adsorbed conductive particles on the surface of electrode pads of a bumpless semiconductor device which is provided with the electrode pads on the surface thereof and with a passivation film at the periphery of the electrode pads, and ultrasonically welding this assembly, so that the conductive particles are metallically bonded and transferred from the flat plate to the electrode pads.
    • 当通过倒装芯片方法将诸如IC芯片的半导体器件与电路板连接时,提供半导体器件而不在其上形成凸块,这使得IC芯片和电路板之间可以实现高可靠性和低成本的连接,同时确保抑制短路 电路,降低连接成本,抑制接头处的应力集中,降低IC芯片或电路板的损坏。 无源半导体器件在其表面上设置有电极焊盘2,并且在电极焊盘2的周围具有钝化膜3,并且导电粒子4金属结合到电焊盘2。 采用在树脂粒子表面形成有金属镀层的复合粒子作为导电粒子4.这种无凸起的半导体器件可以通过(a)使导电粒子静电吸附在平板的一个面上来制造。 和(b)将具有吸附的导电颗粒的板的表面覆盖在其表面上设置有电极焊盘的无扰动半导体器件的电极焊盘的表面上,并且在电极焊盘的周围具有钝化膜, 并且超声波焊接该组件,使得导电颗粒被金属地结合并从平板转移到电极焊盘。