专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08026813B2 Individual management system 有权
标题翻译：个人管理制度
公开(公告)号：US08026813B2
公开(公告)日：2011-09-27
申请号：US12053950
申请日：2008-03-24
申请人： Yumiko Saito , Mayumi Yamaguchi , Konami Izumi
发明人： Yumiko Saito , Mayumi Yamaguchi , Konami Izumi
IPC分类号： G08B13/14
CPC分类号： G01S13/751
摘要： To provide an individual management system for managing products with the use of an automatic identification technology using a wireless communication device. In the individual management system, an individual management device is attached to a managed object, an individual identification device can wirelessly communicate with the individual management device, and an individual information management device can communicate with the individual identification device. The individual management device includes a detection portion such as a sensor. The individual identification device includes a position analysis portion which calculates a distance between the individual management device and the individual identification device. Information on the distance between the individual management device and the individual identification device, and information from the detection portion included in the individual management device are transmitted to the individual identification device. Accordingly, a system user can specify a position of the individual management device accurately.
摘要翻译：提供使用无线通信设备的自动识别技术来管理产品的个人管理系统。在个人管理系统中，将单独的管理装置附加到被管理对象，个体识别装置可以与各个管理装置进行无线通信，个体信息管理装置能够与个体识别装置进行通信。个人管理装置包括诸如传感器的检测部分。个体识别装置包括计算个体管理装置与个体识别装置之间的距离的位置分析部。关于个人管理装置与个体识别装置之间的距离的信息以及来自各个管理装置中包括的检测部分的信息被发送到个体识别装置。因此，系统用户可以准确地指定个体管理装置的位置。

2. 发明授权

US08755169B2 Electrochemical capacitor 有权
标题翻译：电化学电容器
公开(公告)号：US08755169B2
公开(公告)日：2014-06-17
申请号：US12891321
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
IPC分类号： H01G9/00 , H01G9/02
CPC分类号： H01G11/76 , H01G11/02 , H01G11/10 , H01G11/56 , H01G11/62 , H01G11/72 , Y02E60/13
摘要： An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
摘要翻译：提出了能增加容量的电化学电容器。电化学电容器是在基板的表面平面上形成的正极和负极。此外，电化学电容器具有电解质，正极和负极与电解质的相同的表面接触。换句话说，电化学电容器在电解质的表面上具有正极活性物质和负极活性物质，与正极活性物质接触的正极集电体和负极集电体与负极活性物质接触。通过上述结构，能够提高电化学电容器的容量。

3. 发明授权

US08035107B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08035107B2
公开(公告)日：2011-10-11
申请号：US12368759
申请日：2009-02-10
申请人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
发明人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L29/786
CPC分类号： H01L21/764 , H01L27/1288
摘要： A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
摘要翻译：形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜，第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻，以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层，源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。

4. 发明授权

US08207026B2 Manufacturing method of thin film transistor and manufacturing method of display device 有权
标题翻译：薄膜晶体管的制造方法及显示装置的制造方法
公开(公告)号：US08207026B2
公开(公告)日：2012-06-26
申请号：US12693037
申请日：2010-01-25
申请人： Hideomi Suzawa , Takafumi Mizoguchi , Koji Dairiki , Mayumi Mikami , Yumiko Saito
发明人： Hideomi Suzawa , Takafumi Mizoguchi , Koji Dairiki , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L21/764
CPC分类号： H01L27/1288 , H01L27/1214
摘要： To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized.
摘要翻译：为了提供制造薄膜晶体管的方法和使用少量掩模的显示装置，制造薄膜晶体管，使得第一导电膜，绝缘膜，半导体膜，杂质半导体膜，并且第二导电膜被堆叠; 然后在其上形成抗蚀剂掩模; 执行第一蚀刻以形成薄膜堆叠体; 通过干蚀刻进行第一导电膜被侧蚀刻的第二蚀刻，以形成栅电极层; 并且形成源电极，漏电极等。在干蚀刻之前，优选地，蚀刻的半导体膜的至少一个侧表面被氧化。

5. 发明申请

US20110075322A1 ELECTROCHEMICAL CAPACITOR 有权
标题翻译：电化学电容器
公开(公告)号：US20110075322A1
公开(公告)日：2011-03-31
申请号：US12891321
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
IPC分类号： H01G9/155
CPC分类号： H01G11/76 , H01G11/02 , H01G11/10 , H01G11/56 , H01G11/62 , H01G11/72 , Y02E60/13
摘要： An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
摘要翻译：提出了能增加容量的电化学电容器。电化学电容器是在基板的表面平面上形成的正极和负极。此外，电化学电容器具有电解质，正极和负极与电解质的相同的表面接触。换句话说，电化学电容器在电解质的表面上具有正极活性物质和负极活性物质，与正极活性物质接触的正极集电体和负极集电体与负极活性物质接触。通过上述结构，能够提高电化学电容器的容量。

6. 发明申请

US20090212296A1 METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20090212296A1
公开(公告)日：2009-08-27
申请号：US12368759
申请日：2009-02-10
申请人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
发明人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L21/764 , H01L27/1288
摘要： A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
摘要翻译：形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜，第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻，以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层，源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。

7. 发明授权

US09085813B2 Method for recovering metallic lithium 有权
标题翻译：回收金属锂的方法
公开(公告)号：US09085813B2
公开(公告)日：2015-07-21
申请号：US13232001
申请日：2011-09-14
申请人： Yumiko Saito , Junpei Momo , Rie Matsubara , Hiroatsu Todoriki
发明人： Yumiko Saito , Junpei Momo , Rie Matsubara , Hiroatsu Todoriki
IPC分类号： C25C3/02 , C22B26/12 , H01M10/54
CPC分类号： C22B26/12 , C25C3/02 , H01M10/54 , Y02W30/84
摘要： An object is to recover metallic lithium from metallic lithium on which an unnecessary substance is formed without discarding the metallic lithium on which an unnecessary substance is formed. The present invention relates to a method for recovering metallic lithium in such a manner that metallic lithium on which a substance is formed is reacted with nitrogen to form lithium nitride; the lithium nitride is reacted with carbon dioxide to form lithium carbonate; the lithium carbonate is reacted with hydrochloric acid to form lithium chloride; the lithium chloride and potassium chloride are melted; and electrolysis is applied to the melted lithium chloride and potassium chloride.
摘要翻译：目的是从不形成不需要的物质的金属锂中除去不需要的物质的金属锂中回收金属锂。本发明涉及一种回收金属锂的方法，其中形成物质的金属锂与氮反应形成氮化锂; 氮化锂与二氧化碳反应形成碳酸锂; 碳酸锂与盐酸反应形成氯化锂; 氯化锂和氯化钾熔化; 并对熔融的氯化锂和氯化钾进行电解。

8. 发明授权

US08901561B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08901561B2
公开(公告)日：2014-12-02
申请号：US13238019
申请日：2011-09-21
申请人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
发明人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L33/08 , H01L27/12 , H01L21/764
CPC分类号： H01L21/764 , H01L27/1288
摘要： A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
摘要翻译：形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜，第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻，以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层，源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。

9. 发明申请

US20130052547A1 POWER STORAGE DEVICE AND METHOD OF MANUFACTURING POWER STORAGE DEVICE 审中-公开
标题翻译：蓄电装置及蓄电装置的制造方法
公开(公告)号：US20130052547A1
公开(公告)日：2013-02-28
申请号：US13586905
申请日：2012-08-16
申请人： Kiyofumi OGINO , Yumiko Saito
发明人： Kiyofumi OGINO , Yumiko Saito
IPC分类号： H01M12/08 , H01M6/00 , H01M4/96 , H01M4/42 , B82Y30/00
CPC分类号： H01M12/08 , H01M4/381 , H01M4/382 , H01M4/8626 , H01M4/8853 , H01M4/8882 , H01M4/96 , H01M8/0245 , H01M2300/0025 , Y02E60/128 , Y02P70/56 , Y10T29/49108
摘要： A structure and a method of manufacturing a power storage device with high energy density are provided. An air electrode includes a first current collector; a second current collector having a projecting structure, in contact with the first current collector; and a catalyst layer having 1 to 100 graphene films. Accordingly, the surface area of the air electrode can be significantly large due to an effect of the second current collector, and further, the graphene film can produce a catalytic reaction without using a catalyst such as a noble metal; thus, by employing a structure in which the catalyst layer is provided on the second current collector, the energy density of the power storage device can be improved.
摘要翻译：提供一种制造具有高能量密度的蓄电装置的结构和方法。空气电极包括第一集电器; 具有与所述第一集电体接触的突出结构的第二集电体; 和具有1至100个石墨烯膜的催化剂层。因此，由于第二集电体的作用，空气电极的表面积可能显着增大，此外，石墨烯膜可以在不使用贵金属等催化剂的情况下进行催化反应; 因此，通过采用在第二集电体上设置催化剂层的结构，能够提高蓄电装置的能量密度。

10. 发明申请

US20110073991A1 REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译： REDOX电容器及其制造方法
公开(公告)号：US20110073991A1
公开(公告)日：2011-03-31
申请号：US12891461
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito , Junichiro Sakata
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito , Junichiro Sakata
IPC分类号： H01L27/08 , H01L21/02
CPC分类号： H01G11/02 , H01G9/038 , H01G9/22 , H01G11/28 , H01G11/56 , H01G11/68 , H01G11/70 , H01G11/84 , H01L21/02565 , H01L21/02631 , H01L28/40 , Y02E60/13
摘要： To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.
摘要翻译：提供可在室温下使用的氧化还原电容器及其制造方法。包括氢的非晶半导体被用作氧化还原电容器的电解质。作为包括氢的非晶半导体的典型实例，可以使用包括诸如非晶硅，非晶硅锗或无定形锗的半导体元件的非晶半导体。作为包括氢的非晶半导体的另一例子，可以使用包括氢的氧化物半导体。作为包括氢的氧化物半导体的典型实例，可以给出包括氧化锌，氧化钛，氧化镍，氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。作为包含氢的氧化物半导体的另一个实例，可以使用诸如InMO 3（ZnO）m（m> 0和M是选自Ga，Fe，Ni，Mn和Co中的一种或多种金属元素）的多组分氧化物半导体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式