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1. 发明申请

US20130264308A1 PLASMA PROCESS, FILM DEPOSITION METHOD AND SYSTEM USING ROTARY CHUCK 有权
标题翻译：等离子体处理，薄膜沉积方法和使用旋转切割的系统
公开(公告)号：US20130264308A1
公开(公告)日：2013-10-10
申请号：US13439609
申请日：2012-04-04
申请人： Yu-Lung YANG , Ying XIAO , Chin-Hsiang LIN
发明人： Yu-Lung YANG , Ying XIAO , Chin-Hsiang LIN
IPC分类号： B05C11/02 , C03C25/68 , C23C14/54 , H05H1/24
CPC分类号： C23C16/45523 , C23C16/4584 , C23C16/46 , C23C16/50 , C23C16/52 , H01J37/32082 , H01J37/32733 , H01J37/3299
摘要： A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.
摘要翻译：在等离子体处理或薄膜沉积工艺期间，支撑在其上的卡盘和晶片旋转以减小加工或沉积在晶片上的膜的厚度不均匀性。

2. 发明申请

US20130322990A1 LOADPORT BRIDGE FOR SEMICONDUCTOR FABRICATION TOOLS 有权
标题翻译：半导体制造工具的负载桥
公开(公告)号：US20130322990A1
公开(公告)日：2013-12-05
申请号：US13486024
申请日：2012-06-01
申请人： Shih-Hung CHEN , Ying XIAO , Chin-Hsiang LIN
发明人： Shih-Hung CHEN , Ying XIAO , Chin-Hsiang LIN
IPC分类号： H01L21/677
CPC分类号： H01L21/6773 , H01L21/67733 , H01L21/67775
摘要： A wafer handling system with apparatus for transporting wafers between semiconductor fabrication tools. In one embodiment, the apparatus is a loadport bridge mechanism including an enclosure having first and second mounting ends, a docking port at each end configured and dimensioned to interface with a loadport of a semiconductor tool, and at least one wafer transport robot operable to transport a wafer between the docking ports. The wafer transport robot hands off or receives a wafer to/from a tool robot at the loadports of a first and second tool. The bridge mechanism allows one or more wafers to be transferred between loadports of different tools on an individual basis without reliance on the FAB's automated material handling system (AMHS) for bulk wafer transport inside a wafer carrier such as a FOUP or others.
摘要翻译：一种具有用于在半导体制造工具之间传输晶片的装置的晶片处理系统。在一个实施例中，该装置是装载端口机构，其包括具有第一和第二安装端的外壳，每个端部处的对接端口被构造和尺寸设计成与半导体工具的承载端口相接合，以及至少一个可运输的晶片传送机械手在对接端口之间的晶片。晶片传送机器人在第一和第二工具的载荷端口移动或接收来自工具机器人的晶片。桥接机构允许一个或多个晶片在不同工具的载荷端口之间单独传输，而不依赖于FAB的自动化材料处理系统（AMHS），用于在诸如FOUP或其它晶片载体之间的体晶片传输。

3. 发明申请

US20130319612A1 PLASMA CHAMBER HAVING AN UPPER ELECTRODE HAVING CONTROLLABLE VALVES AND A METHOD OF USING THE SAME 有权
标题翻译：具有可控阀的上电极的等离子体室及其使用方法
公开(公告)号：US20130319612A1
公开(公告)日：2013-12-05
申请号：US13486374
申请日：2012-06-01
申请人： Yen-Shuo SU , Ying XIAO , Chin-Hsiang LIN
发明人： Yen-Shuo SU , Ying XIAO , Chin-Hsiang LIN
IPC分类号： H01L21/3065 , H05H1/24
CPC分类号： C23C16/50 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32899
摘要： This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.
摘要翻译：本说明书涉及包括蒸气室，气体供应和上部电极组件的等离子体处理装置。上部电极组件包括在其底表面中具有多个孔的气体分布板和具有至少一个气体喷嘴的至少一个可控阀与至少一个气体喷嘴连接的上部电极。等离子体处理装置还包括配置成产生控制信号的控制器。至少一个可控阀被配置为基于控制信号进行调节。还描述了控制系统和控制可控阀的方法。

4. 发明申请

US20130295297A1 SEMICONDUCTOR FILM FORMATION APPARATUS AND PROCESS 有权
标题翻译：半导体膜形成装置和工艺
公开(公告)号：US20130295297A1
公开(公告)日：2013-11-07
申请号：US13460884
申请日：2012-05-01
申请人： You-Hua CHOU , Chih-Tsung LEE , Shu-Fen WU , Chin-Hsiang LIN
发明人： You-Hua CHOU , Chih-Tsung LEE , Shu-Fen WU , Chin-Hsiang LIN
IPC分类号： C23C16/455 , H05H1/24
CPC分类号： C23C16/45565 , C23C16/5096
摘要： An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.
摘要翻译：公开了用于在半导体衬底上形成薄膜的装置和方法。在一个实施例中的装置包括被配置用于支撑衬底，气体激发电源以及流体耦合到含有反应性工艺气体源的膜前体的第一和第二气体分配喷头的处理室。喷头将气体分配到衬底上方的两个不同区域中，该衬底被激发以在晶片上产生内部等离子体场和外部等离子体场。该装置以促进在基底上形成具有基本上均匀的厚度的膜的方式将材料沉积在基底上。在一个实施例中，衬底是晶片。各种实施例包括连接到第一和第二喷头的第一和第二可独立控制的电源，以改变每个区域中的功率电平和等离子体强度。

5. 发明申请

US20130264498A1 SYSTEM AND METHOD OF ION NEUTRALIZATION WITH MULTIPLE-ZONED PLASMA FLOOD GUN 有权
标题翻译：多层次等离子体喷枪离子中和的系统与方法
公开(公告)号：US20130264498A1
公开(公告)日：2013-10-10
申请号：US13439124
申请日：2012-04-04
申请人： Chun-Lin CHANG , Chih-Hing HWANG , Wen-Yu KU , Chi-Ming YANG , Chin-Hsiang LIN
发明人： Chun-Lin CHANG , Chih-Hing HWANG , Wen-Yu KU , Chi-Ming YANG , Chin-Hsiang LIN
IPC分类号： H01L21/265 , G21K5/00
CPC分类号： H01J37/3171 , A61N5/00 , G21G5/00 , G21K1/14 , H01J2237/0044
摘要： An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.
摘要翻译：一种装置包括用于在使用离子束的离子注入的过程中中和半导体晶片上的正电荷累积的等离子体喷枪。等离子体喷枪包括两个以上的电弧室，其中每个电弧室被配置为在与半导体晶片相邻的相应区域中产生电子并将其释放到离子束中。

6. 发明申请

US20130144423A1 SYSTEMS AND METHODS OF AUTOMATIC BOUNDARY CONTROL FOR SEMICONDUCTOR PROCESSES 有权
标题翻译：半导体工艺自动边界控制系统与方法
公开(公告)号：US20130144423A1
公开(公告)日：2013-06-06
申请号：US13311601
申请日：2011-12-06
申请人： Chih-Wei HSU , Mei-Jen WU , Yen-Di TSEN , Jo Fei WANG , Jong-I MOU , Chin-Hsiang LIN
发明人： Chih-Wei HSU , Mei-Jen WU , Yen-Di TSEN , Jo Fei WANG , Jong-I MOU , Chin-Hsiang LIN
IPC分类号： G06F19/00
CPC分类号： G05B19/18 , G05B2219/45031 , H01L22/20
摘要： A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.
摘要翻译：一种自动计算半导体制造工艺边界的系统和方法。该方法包括在半导体制造过程中选择用于监测的第一参数。接收第一参数的第一组值，并确定第一组的组值。第一组值中的每个值都被归一化。基于第一组中的值的数量来选择第一加权因子。该实施例还包括根据加权因子，第一集合归一化值和第一组的组值产生第一和第二边界值，并施加第一和第二边界值以控制半导体制造过程。

7. 发明申请

US20070037410A1 METHOD FOR FORMING A LITHOGRAPHY PATTERN 有权
标题翻译：形成图形图案的方法
公开(公告)号：US20070037410A1
公开(公告)日：2007-02-15
申请号：US11426233
申请日：2006-06-23
申请人： Ching-Yu CHANG , Chin-Hsiang LIN , Burn Jeng LIN
发明人： Ching-Yu CHANG , Chin-Hsiang LIN , Burn Jeng LIN
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/3081 , H01L21/3086
摘要： A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.
摘要翻译：光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

8. 发明申请

US20130309612A1 ENHANCED SCANNER THROUGHPUT SYSTEM AND METHOD 有权
标题翻译：增强扫描仪通过系统和方法
公开(公告)号：US20130309612A1
公开(公告)日：2013-11-21
申请号：US13473695
申请日：2012-05-17
申请人： Yu-Mei LIU , Chin-Hsiang LIN , Heng-Hsin LIU , Heng-Jen LEE , I-Hsiung HUANG , Chih-Wei LIN
发明人： Yu-Mei LIU , Chin-Hsiang LIN , Heng-Hsin LIU , Heng-Jen LEE , I-Hsiung HUANG , Chih-Wei LIN
IPC分类号： G03F7/20
CPC分类号： G03F7/70358
摘要： A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned.
摘要翻译：提供了一种提高扫描仪吞吐量的方法和系统。使用连续线性扫描程序将来自掩模版的图像投影到基板上，其中连续扫描整列管芯或裸片的单元，即不进入不同的位置。每个扫描包括相对于固定光束平移衬底。当底物被翻译时，掩模版也被翻译。当模具的第一裸片或裸片投影到衬底上时，标线沿着与扫描方向相反的方向平移，并且随着扫描沿着相同的方向继续，标线片然后在衬底的相反方向上平移，从而形成倒置图案在下一个死亡或细胞。与曝光底物相关的时间最小化，因为步进操作仅在扫描完整的单元格列之后才发生。

9. 发明申请

US20120086075A1 DEVICE WITH ALUMINUM SURFACE PROTECTION 有权
标题翻译：具有铝表面保护的器件
公开(公告)号：US20120086075A1
公开(公告)日：2012-04-12
申请号：US13327992
申请日：2011-12-16
申请人： Kuo Bin HUANG , Ssu-Yi LI , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
发明人： Kuo Bin HUANG , Ssu-Yi LI , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
IPC分类号： H01L27/088
CPC分类号： H01L21/823842 , H01L21/28079 , H01L21/28088 , H01L21/28247 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.
摘要翻译：具有金属栅极结构的半导体结构包括具有第一栅极的第一型场效应晶体管，包括：基板上的高k电介质材料，高k电介质材料层上的第一金属层，具有第一功函数，以及在第一金属层上的第一铝层。第一铝层包括包含铝，氮和氧的界面层。该器件还包括具有第二栅极的第二类场效应晶体管，其包括：衬底上的高k电介质材料，高k电介质材料层上的第二金属层，具有不同于第一功函数的第二功函数，和在第二金属层上的第二铝层。

10. 发明申请

US20120064715A1 INTEGRATION OF BOTTOM-UP METAL FILM DEPOSITION 有权
标题翻译：底部金属膜沉积的整合
公开(公告)号：US20120064715A1
公开(公告)日：2012-03-15
申请号：US13302520
申请日：2011-11-22
申请人： Simon Su-Horng LIN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
发明人： Simon Su-Horng LIN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
IPC分类号： H01L21/26
CPC分类号： H01L29/78 , C23C14/022 , C23C14/046 , C23C14/18 , C23C14/221 , C23C16/0263 , C23C16/045 , C23C16/06 , C23C16/48 , C23C16/484 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76865 , H01L21/76877 , H01L29/4966 , H01L29/66545
摘要： A method of depositing a metal film on a substrate with patterned features includes placing a substrate with patterned features into a photo-induced chemical vapor deposition (PI-CVD) process chamber. The method also includes depositing a metal film by PI-CVD to fill the patterned features from bottom up.
摘要翻译：在具有图案特征的基板上沉积金属膜的方法包括将具有图案化特征的基板放置在光致化学气相沉积（PI-CVD）处理室中。该方法还包括通过PI-CVD沉积金属膜以从下向上填充图案化特征。

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