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1. 发明申请

US20130319612A1 PLASMA CHAMBER HAVING AN UPPER ELECTRODE HAVING CONTROLLABLE VALVES AND A METHOD OF USING THE SAME 有权
标题翻译：具有可控阀的上电极的等离子体室及其使用方法
公开(公告)号：US20130319612A1
公开(公告)日：2013-12-05
申请号：US13486374
申请日：2012-06-01
申请人： Yen-Shuo SU , Ying XIAO , Chin-Hsiang LIN
发明人： Yen-Shuo SU , Ying XIAO , Chin-Hsiang LIN
IPC分类号： H01L21/3065 , H05H1/24
CPC分类号： C23C16/50 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32899
摘要： This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.
摘要翻译：本说明书涉及包括蒸气室，气体供应和上部电极组件的等离子体处理装置。上部电极组件包括在其底表面中具有多个孔的气体分布板和具有至少一个气体喷嘴的至少一个可控阀与至少一个气体喷嘴连接的上部电极。等离子体处理装置还包括配置成产生控制信号的控制器。至少一个可控阀被配置为基于控制信号进行调节。还描述了控制系统和控制可控阀的方法。

2. 发明申请

US20130264308A1 PLASMA PROCESS, FILM DEPOSITION METHOD AND SYSTEM USING ROTARY CHUCK 有权
标题翻译：等离子体处理，薄膜沉积方法和使用旋转切割的系统
公开(公告)号：US20130264308A1
公开(公告)日：2013-10-10
申请号：US13439609
申请日：2012-04-04
申请人： Yu-Lung YANG , Ying XIAO , Chin-Hsiang LIN
发明人： Yu-Lung YANG , Ying XIAO , Chin-Hsiang LIN
IPC分类号： B05C11/02 , C03C25/68 , C23C14/54 , H05H1/24
CPC分类号： C23C16/45523 , C23C16/4584 , C23C16/46 , C23C16/50 , C23C16/52 , H01J37/32082 , H01J37/32733 , H01J37/3299
摘要： A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.
摘要翻译：在等离子体处理或薄膜沉积工艺期间，支撑在其上的卡盘和晶片旋转以减小加工或沉积在晶片上的膜的厚度不均匀性。

3. 发明申请

US20130322990A1 LOADPORT BRIDGE FOR SEMICONDUCTOR FABRICATION TOOLS 有权
标题翻译：半导体制造工具的负载桥
公开(公告)号：US20130322990A1
公开(公告)日：2013-12-05
申请号：US13486024
申请日：2012-06-01
申请人： Shih-Hung CHEN , Ying XIAO , Chin-Hsiang LIN
发明人： Shih-Hung CHEN , Ying XIAO , Chin-Hsiang LIN
IPC分类号： H01L21/677
CPC分类号： H01L21/6773 , H01L21/67733 , H01L21/67775
摘要： A wafer handling system with apparatus for transporting wafers between semiconductor fabrication tools. In one embodiment, the apparatus is a loadport bridge mechanism including an enclosure having first and second mounting ends, a docking port at each end configured and dimensioned to interface with a loadport of a semiconductor tool, and at least one wafer transport robot operable to transport a wafer between the docking ports. The wafer transport robot hands off or receives a wafer to/from a tool robot at the loadports of a first and second tool. The bridge mechanism allows one or more wafers to be transferred between loadports of different tools on an individual basis without reliance on the FAB's automated material handling system (AMHS) for bulk wafer transport inside a wafer carrier such as a FOUP or others.
摘要翻译：一种具有用于在半导体制造工具之间传输晶片的装置的晶片处理系统。在一个实施例中，该装置是装载端口机构，其包括具有第一和第二安装端的外壳，每个端部处的对接端口被构造和尺寸设计成与半导体工具的承载端口相接合，以及至少一个可运输的晶片传送机械手在对接端口之间的晶片。晶片传送机器人在第一和第二工具的载荷端口移动或接收来自工具机器人的晶片。桥接机构允许一个或多个晶片在不同工具的载荷端口之间单独传输，而不依赖于FAB的自动化材料处理系统（AMHS），用于在诸如FOUP或其它晶片载体之间的体晶片传输。

4. 发明申请

US20100267172A1 Formation of Shallow Trench Isolation Using Chemical Vapor Etch 有权
标题翻译：使用化学蒸气蚀刻法形成浅沟槽隔离
公开(公告)号：US20100267172A1
公开(公告)日：2010-10-21
申请号：US12426711
申请日：2009-04-20
申请人： Ying XIAO , Chyi Shyuan CHERN
发明人： Ying XIAO , Chyi Shyuan CHERN
IPC分类号： H01L21/66 , C23F1/08
CPC分类号： H01L22/20 , H01L21/76224 , H01L22/12
摘要： A method includes measuring a depth of a shallow trench isolation (STI) region below a surface of a substrate. The STI region is filled with an oxide material. The substrate has a nitride layer above the surface. A thickness of the nitride layer is measured. A first chemical vapor etch (CVE) of the oxide material is performed, to partially form a recess in the STI region. The first CVE removes an amount of the oxide material less than the thickness of the nitride layer. The nitride layer is removed by dry etching. A remaining height of the STI region is measured after removing the nitride. A second CVE of the oxide material in the STI region is performed, based on the measured depth and the remaining height, to form at least one fin having a desired fin height above the oxide in the STI region without an oxide fence.
摘要翻译：一种方法包括测量衬底表面下面的浅沟槽隔离（STI）区域的深度。 STI区域填充有氧化物材料。衬底在表面上方具有氮化物层。测量氮化物层的厚度。执行氧化物材料的第一化学气相蚀刻（CVE），以在STI区域中部分地形成凹陷。第一CVE去除少于氮化物层的厚度的一定量的氧化物材料。通过干蚀刻去除氮化物层。在去除氮化物之后测量STI区的剩余高度。基于测量的深度和剩余高度，执行STI区域中的氧化物材料的第二CVE，以形成在没有氧化物栅栏的STI区域中具有高于氧化物的所需翅片高度的至少一个翅片。

5. 发明申请

US20160182039A1 SMART SWITCH FOR CONNECTING AN INPUT POWER SUPPLY TO A LOAD 有权
标题翻译：用于将输入电源连接到负载的智能开关
公开(公告)号：US20160182039A1
公开(公告)日：2016-06-23
申请号：US14664579
申请日：2015-03-20
申请人： Ying XIAO , Rohan SAMSI , Jinghai ZHOU
发明人： Ying XIAO , Rohan SAMSI , Jinghai ZHOU
IPC分类号： H03K17/687
CPC分类号： H03K17/18 , H03K2217/0009
摘要： A monolithic integrated circuit (IC) switch device includes an input pin that receives an input power supply and an output pin that is connected to a load. The monolithic IC switch device includes driving circuitry that controls a switching operation of a power switch to connect and disconnect the input power supply to and from the load. A microcontroller can enable or disable the monolithic IC switch device based on indicator signals received by the microcontroller from the monolithic IC switch device.
摘要翻译：单片集成电路（IC）开关装置包括接收输入电源的输入引脚和连接到负载的输出引脚。单片IC开关装置包括驱动电路，其控制电源开关的切换操作以连接和断开与负载的输入电源。微控制器可以基于微控制器从单片IC开关装置接收的指示信号来启用或禁用单片IC开关装置。

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