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    • 4. 发明申请
    • MRAM embedded smart power integrated circuits
    • MRAM嵌入式智能电源集成电路
    • US20070002609A1
    • 2007-01-04
    • US11170874
    • 2005-06-30
    • Young ChungRobert BairdMark DurlamGregory GrynkewichEric Salter
    • Young ChungRobert BairdMark DurlamGregory GrynkewichEric Salter
    • G11C11/14
    • G11C11/1659H01F10/3254
    • An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and a smart power integrated circuit architecture formed on the same substrate using the same fabrication process technology. The fabrication process technology is a modular process having a front end process and a back end process. In the example embodiment, the smart power architecture includes a power circuit component, a digital logic component, and an analog control component formed by the front end process, and a sensor architecture formed by the back end process. The MRAM architecture includes an MRAM circuit component formed by the front end process and an MRAM cell array formed by the back end process. In one practical embodiment, the sensor architecture includes a sensor component that is formed from the same magnetic tunnel junction core material utilized by the MRAM cell array. The concurrent fabrication of the MRAM architecture and the smart power architecture facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
    • 集成电路装置包括使用相同的制造工艺技术在同一衬底上形成的磁性随机存取存储器(“MRAM”)架构和智能电力集成电路架构。 制造工艺技术是具有前端工艺和后端工艺的模块化工艺。 在该示例性实施例中,智能功率架构包括由前端处理形成的电源电路部件,数字逻辑部件和模拟控制部件以及由后端处理形成的传感器架构。 MRAM架构包括由前端处理形成的MRAM电路部件和由后端处理形成的MRAM单元阵列。 在一个实际实施例中,传感器架构包括由MRAM单元阵列使用的相同的磁性隧道结芯体材料形成的传感器部件。 MRAM架构和智能电源架构的并行制造有助于在衬底的有源电路块上可用的物理空间的有效和成本有效的使用,导致三维集成。