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1. 发明申请

US20060273418A1 3-D inductor and transformer devices in MRAM embedded integrated circuits 失效
标题翻译： 3-D电感和变压器装置在MRAM嵌入式集成电路中
公开(公告)号：US20060273418A1
公开(公告)日：2006-12-07
申请号：US11147599
申请日：2005-06-07
申请人： Young Chung , Robert Baird , Mark Durlam , Bradley Engel
发明人： Young Chung , Robert Baird , Mark Durlam , Bradley Engel
IPC分类号： H01L43/00
CPC分类号： H01L27/222 , G11C11/16 , H01F17/0006 , H01F19/04 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal layer (or layers) as the program lines of the MRAM architecture. Any available metal layer in addition to the program line layers can be added to the inductance element to enhance its efficiency. The concurrent fabrication of the MRAM architecture and the inductance element facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
摘要翻译：集成电路器件包括磁性随机存取存储器（“MRAM”）结构以及使用相同的制造工艺技术在同一衬底上形成的至少一个电感元件。可以是电感器或变压器的电感元件形成在与MRAM架构的程序行相同的金属层（或多层）上。除了编程线层之外，可以将任何可用的金属层添加到电感元件以提高其效率。 MRAM架构和电感元件的并发制造有助于在衬底的有源电路块上可用的物理空间的有效和成本有效的使用，从而导致三维集成。

2. 发明申请

US20070076330A1 Magnetic tunnel junction temperature sensors 失效
标题翻译：磁隧道结温度传感器
公开(公告)号：US20070076330A1
公开(公告)日：2007-04-05
申请号：US11240514
申请日：2005-09-30
申请人： Young Chung , Robert Baird , Mark Durlam
发明人： Young Chung , Robert Baird , Mark Durlam
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , G01K7/01 , G11C29/50 , G11C29/50008 , G11C2029/5002
摘要： An integrated circuit device is provided which includes a heat source disposed in a substrate, and a Magnetic Tunnel Junction (“MTJ”) temperature sensor disposed over the heat source.
摘要翻译：提供一种集成电路装置，其包括设置在基板中的热源和设置在热源上方的磁隧道结（“MTJ”）温度传感器。

3. 发明申请

US20070045759A1 Passive elements in MRAM embedded integrated circuits 有权
公开(公告)号：US20070045759A1
公开(公告)日：2007-03-01
申请号：US11217146
申请日：2005-08-31
申请人： Young Chung , Robert Baird , Mark Durlam , Gregory Grynkewich , Eric Salter
发明人： Young Chung , Robert Baird , Mark Durlam , Gregory Grynkewich , Eric Salter
IPC分类号： H01L43/00
CPC分类号： H01L27/228
摘要： An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a passive device (320) is formed in conjunction with the MRAM cell (316). The passive device (320) can be one or more resistors and one or more capacitor. The concurrent fabrication of the MRAM architecture (314) and the passive device (320) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate (404, 504), resulting in three-dimensional integration.

4. 发明申请

US20070002609A1 MRAM embedded smart power integrated circuits 有权
标题翻译： MRAM嵌入式智能电源集成电路
公开(公告)号：US20070002609A1
公开(公告)日：2007-01-04
申请号：US11170874
申请日：2005-06-30
申请人： Young Chung , Robert Baird , Mark Durlam , Gregory Grynkewich , Eric Salter
发明人： Young Chung , Robert Baird , Mark Durlam , Gregory Grynkewich , Eric Salter
IPC分类号： G11C11/14
CPC分类号： G11C11/1659 , H01F10/3254
摘要： An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and a smart power integrated circuit architecture formed on the same substrate using the same fabrication process technology. The fabrication process technology is a modular process having a front end process and a back end process. In the example embodiment, the smart power architecture includes a power circuit component, a digital logic component, and an analog control component formed by the front end process, and a sensor architecture formed by the back end process. The MRAM architecture includes an MRAM circuit component formed by the front end process and an MRAM cell array formed by the back end process. In one practical embodiment, the sensor architecture includes a sensor component that is formed from the same magnetic tunnel junction core material utilized by the MRAM cell array. The concurrent fabrication of the MRAM architecture and the smart power architecture facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
摘要翻译：集成电路装置包括使用相同的制造工艺技术在同一衬底上形成的磁性随机存取存储器（“MRAM”）架构和智能电力集成电路架构。制造工艺技术是具有前端工艺和后端工艺的模块化工艺。在该示例性实施例中，智能功率架构包括由前端处理形成的电源电路部件，数字逻辑部件和模拟控制部件以及由后端处理形成的传感器架构。 MRAM架构包括由前端处理形成的MRAM电路部件和由后端处理形成的MRAM单元阵列。在一个实际实施例中，传感器架构包括由MRAM单元阵列使用的相同的磁性隧道结芯体材料形成的传感器部件。 MRAM架构和智能电源架构的并行制造有助于在衬底的有源电路块上可用的物理空间的有效和成本有效的使用，导致三维集成。

5. 发明申请

US20070077664A1 Magnetic tunnel junction temperature sensors and methods 失效
标题翻译：磁隧道结温度传感器及方法
公开(公告)号：US20070077664A1
公开(公告)日：2007-04-05
申请号：US11239884
申请日：2005-09-30
申请人： Young Chung , Robert Baird , Mark Durlam
发明人： Young Chung , Robert Baird , Mark Durlam
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L27/228 , G01K7/36 , Y10T428/1114
摘要： Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction (“MTJ”) temperature sensor is provided over the heat source. The MTJ temperature sensor comprises an MTJ core configured to output a current during operation thereof. The value of the current varies based on a resistance value of the particular MTJ core. The resistance value of the MTJ core varies as a function of the temperature of the heat source. A value of the current of the MTJ core can then be associated with a corresponding temperature of the heat source.
摘要翻译：提供了感测设置在集成电路的基板中的热源的温度的技术。根据一个示例性方法，在热源上提供磁隧道结（“MTJ”）温度传感器。 MTJ温度传感器包括被配置为在其操作期间输出电流的MTJ内核。电流值根据特定MTJ磁芯的电阻值而变化。 MTJ芯的电阻值随着热源的温度而变化。然后，MTJ芯的电流的值可以与热源的相应温度相关联。

6. 发明申请

US20070097732A1 MAGNETIC TUNNEL JUNCTION CURRENT SENSORS 有权
公开(公告)号：US20070097732A1
公开(公告)日：2007-05-03
申请号：US11262053
申请日：2005-10-28
申请人： Young Chung , Robert Baird , Mark Durlam , Gregory Grynkewich , Eric salter , Jiang-Kai Zuo
发明人： Young Chung , Robert Baird , Mark Durlam , Gregory Grynkewich , Eric salter , Jiang-Kai Zuo
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： An integrated circuit device is provided which includes an active circuit component and a current sensor. The active circuit component may be coupled between a first conductive layer and a second conductive layer, and is configured to produce a first current. The current sensor is disposed over the active circuit component. The current sensor may comprise a Magnetic Tunnel Junction (“MTJ”) core disposed between the first conductive layer and the second conductive layer. The MTJ core is configured to sense the first current and produce a second current based on the first current sensed at the MTJ core.
摘要翻译：提供一种集成电路装置，其包括有源电路部件和电流传感器。有源电路组件可以耦合在第一导电层和第二导电层之间，并且被配置为产生第一电流。电流传感器设置在有源电路部件上。电流传感器可以包括设置在第一导电层和第二导电层之间的磁隧道结（“MTJ”）芯。 MTJ内核被配置为基于在MTJ核心处感测到的第一电流来感测第一电流并产生第二电流。

7. 发明申请

US20070099308A1 Methods of implementing magnetic tunnel junction current sensors 有权
公开(公告)号：US20070099308A1
公开(公告)日：2007-05-03
申请号：US11262054
申请日：2005-10-28
申请人： Young Chung , Robert Baird , Mark Durlam
发明人： Young Chung , Robert Baird , Mark Durlam
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction (“MTJ”) core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.

8. 发明申请

US20070025027A1 Magnetic tunnel junction sensor 失效
标题翻译：磁隧道结传感器
公开(公告)号：US20070025027A1
公开(公告)日：2007-02-01
申请号：US11192569
申请日：2005-07-29
申请人： Young Chung , Robert Baird , Bradley Engel
发明人： Young Chung , Robert Baird , Bradley Engel
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/06
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和装置。该装置包括磁隧道结（MTJ）和磁场源，其磁场与MTJ重叠，并且其与MTJ的接近度响应于对传感器的输入而变化。 MTJ包括由电介质隔开的第一和第二磁极，其被配置为允许它们之间的显着的隧穿传导。第一磁极的自旋轴被固定，第二磁极的旋转轴自由。磁场源比第一磁极更靠近第二磁极。通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

9. 发明申请

US20070099031A1 Magnetic tunnel junction pressure sensors and methods 失效
标题翻译：磁隧道结压力传感器及方法
公开(公告)号：US20070099031A1
公开(公告)日：2007-05-03
申请号：US11262064
申请日：2005-10-28
申请人： Young Chung , Robert Baird , Bradley Engel
发明人： Young Chung , Robert Baird , Bradley Engel
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , G01L19/16 , Y10T428/1114 , Y10T428/1143 , Y10T428/1171
摘要： An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction (“MTJ”) core formed between the substrate and the current line. The conductive line is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core has a resistance value which varies based on the magnetic field. The resistance of the MTJ core therefore varies with respect to changes in the pressure. The MTJ core is configured to produce an electrical output signal which varies as a function of the pressure.
摘要翻译：提供一种集成电路器件，其包括衬底，被配置为经受压力的导线和形成在衬底和电流线之间的磁性隧道结（“MTJ”）芯。导线被配置为响应于压力而移动，并且承载产生磁场的电流。 MTJ芯具有根据磁场而变化的电阻值。因此，MTJ芯的电阻因压力变化而变化。 MTJ内核被配置为产生作为压力的函数而变化的电输出信号。

10. 发明申请

US20060003551A1 Ultra-thin die and method of fabricating same 有权
公开(公告)号：US20060003551A1
公开(公告)日：2006-01-05
申请号：US10881144
申请日：2004-06-30
申请人： David Mancini , Young Chung , William Dauksher , Donald Weston , Steven Young , Robert Baird
发明人： David Mancini , Young Chung , William Dauksher , Donald Weston , Steven Young , Robert Baird
IPC分类号： H01L21/301 , H01L21/46
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.

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