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1. 发明授权

US4953125A Semiconductor memory device having improved connecting structure of bit line and memory cell 失效
标题翻译：半导体存储器件具有改进的位线和存储单元的连接结构
公开(公告)号：US4953125A
公开(公告)日：1990-08-28
申请号：US173749
申请日：1988-03-25
申请人： Yoshinori Okumura , Akihiko Ohsaki , Kazuyuki Sugahara , Tatsuhiko Ikeda
发明人： Yoshinori Okumura , Akihiko Ohsaki , Kazuyuki Sugahara , Tatsuhiko Ikeda
IPC分类号： H01L29/41 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10829
摘要： A semiconductor memory device includes a first trench serving as a memory cell formed in a p type semiconductor substrate, a first n type semiconductor region formed adjacent to the trench region and on the major surface of the semiconductor substrate, a conductive layer serving as an electron active region formed adjacent to the first n type region and on the major surface of the semiconductor substrate, a second n type semiconductor region formed adjacent to the electron active region and on the major surface of the semiconductor substrate, a second trench formed adjacent to the second n type semiconductor region in the major surface of the semiconductor substrate which is shallower than the first trench, an interconnection layer serving as a bit line formed in a self-aligning manner in the sidewall portion of the second trench which is shallower than the first trench and a gate electrode serving as a word line formed in the upper portion of the conductive layer through an oxide film.
摘要翻译：半导体存储器件包括用作形成在p型半导体衬底中的存储单元的第一沟槽，与沟槽区相邻并且在半导体衬底的主表面上形成的第一n型半导体区，用作电子活性的导电层形成在与第一n型区域相邻并且在半导体衬底的主表面上形成的第二n型半导体区域，形成在与电子有源区相邻并且在半导体衬底的主表面上，第二沟槽，在半导体衬底的主表面上比第一沟槽浅的n型半导体区域，在第二沟槽的侧壁部分中以自对准的方式形成的位线的互连层比第一沟槽浅以及用作通过氧化膜形成在导电层的上部的字线的栅电极。

2. 发明授权

US4990991A Bipolar transistor and method of manufacturing the same 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US4990991A
公开(公告)日：1991-02-05
申请号：US115049
申请日：1987-10-30
申请人： Tatsuhiko Ikeda , Kazuyuki Sugahara , Shigeru Kusunoki , Kyusaku Nishioka
发明人： Tatsuhiko Ikeda , Kazuyuki Sugahara , Shigeru Kusunoki , Kyusaku Nishioka
IPC分类号： H01L21/285 , H01L21/331 , H01L29/73
CPC分类号： H01L29/7317 , H01L21/28525 , Y10S148/011
摘要： Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a biolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.
摘要翻译：本文公开了一种双极晶体管及其制造方法。本发明提供一种双极晶体管及其制造方法，其中集电极层，基极层和发射极层依次形成在半导体衬底的绝缘层上形成的单晶硅层。根据本发明，可以降低基极和集电极之间的寄生电容，并且可以去除集电极和基板之间的p-n结电容，从而实现高速操作。

3. 发明授权

US5070030A Method of making an oxide isolated, lateral bipolar transistor 失效
标题翻译：制备氧化物隔离，横向双极晶体管的方法
公开(公告)号：US5070030A
公开(公告)日：1991-12-03
申请号：US606828
申请日：1990-10-31
申请人： Tatsuhiko Ikeda , Kazuyuki Sugahara , Shigeru Kusunoki , Kyusaku Nishioka
发明人： Tatsuhiko Ikeda , Kazuyuki Sugahara , Shigeru Kusunoki , Kyusaku Nishioka
IPC分类号： H01L21/285 , H01L21/331 , H01L29/73
CPC分类号： H01L29/7317 , H01L21/28525 , Y10S148/011
摘要： Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a bipolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

4. 发明申请

US20130057096A1 POWER TRANSMISSION DEVICE FOR ELECTRIC VEHICLE 审中-公开
标题翻译：电动车用动力传动装置
公开(公告)号：US20130057096A1
公开(公告)日：2013-03-07
申请号：US13697663
申请日：2011-05-26
申请人： Tomohiro Okada , Naoaki Oikawa , Takahiro Saruwatari , Tatsuhiko Ikeda , Ken Nakayama , Kazuhiko Soeda , Akinori Inada
发明人： Tomohiro Okada , Naoaki Oikawa , Takahiro Saruwatari , Tatsuhiko Ikeda , Ken Nakayama , Kazuhiko Soeda , Akinori Inada
IPC分类号： H02K11/02
CPC分类号： H02K11/40 , B60L15/2054 , B60L50/50 , B60L2270/147 , F16H3/091 , F16H57/02 , F16H2057/02034 , F16H2057/02043 , H02K7/116 , H02K11/33 , H02K21/14 , Y02T10/641 , Y02T10/645 , Y02T10/7275
摘要： A power transmission device for a vehicle is comprised of a motor including a rotor shaft and a stator having an electromagnetic coil; an inverter configured to generate an alternating current, the inverter being connected with the coil to controllably rotate the rotor shaft relative to the stator; a gear set including an input shaft coupled with and rotated by the rotor shaft, an output shaft and gears so meshed as to transmit torque of the input shaft to the output shaft; and a grounding path electrically connecting a part of the gear set with a body of the vehicle, the part being so disposed as to have the input shaft electrically interposed between the part and the rotor shaft.
摘要翻译：一种用于车辆的动力传递装置包括：电动机，其包括转子轴和具有电磁线圈的定子; 反相器，其被配置为产生交流电流，所述逆变器与所述线圈连接，以相对于所述定子可控地旋转所述转子轴; 齿轮组，其包括与转子轴联接并由转子轴旋转的输入轴，输出轴和齿轮，以便将输入轴的扭矩传递到输出轴; 以及将所述齿轮组的一部分与所述车辆主体电连接的所述接地路径，所述部分设置成将所述输入轴电插入所述部分和所述转子轴之间。

5. 发明授权

US06747707B2 Data editing system for finally editing a recording medium using received compressed data 有权
标题翻译：数据编辑系统，用于使用接收到的压缩数据最终编辑记录介质
公开(公告)号：US06747707B2
公开(公告)日：2004-06-08
申请号：US09823071
申请日：2001-03-30
申请人： Hiroshi Saito , Yasuo Hamamoto , Kazuhiro Wake , Tatsuhiko Ikeda
发明人： Hiroshi Saito , Yasuo Hamamoto , Kazuhiro Wake , Tatsuhiko Ikeda
IPC分类号： H04N5222
CPC分类号： H04N7/147 , G11B27/031 , G11B27/032 , G11B27/34 , G11B2220/90 , H04N2007/145
摘要： A data editing system has a data transmitting-side unit including a camera shooting a video; a recorder recording the video shot onto a predetermined recording medium; and a transmitter compressing the video shot by the camera and transmitting the compresed video. The system also has a data editing-side unit including a receiver receiving the data transmitted from the data transmitting-side unit; editing instructions for performing the final editing of the video recorded on the recording medium by using the data received by the receiver; and a final editor performing the final editing of the video recorded on the recording medium based on the editing instruction.
摘要翻译：数据编辑系统具有包括拍摄视频的相机的数据发送侧单元; 将录像机记录到预定记录介质上的记录器; 以及发送器，压缩由相机拍摄的视频并发送压缩的视频。系统还具有数据编辑侧单元，其包括接收从数据发送侧单元发送的数据的接收器; 编辑用于通过使用由接收器接收的数据来执行记录在记录介质上的视频的最终编辑的指令; 以及基于编辑指令执行对记录在记录介质上的视频的最终编辑的最终编辑器。

6. 发明授权

US5955371A Apparatus for inhibiting glycolysis in blood samples 失效
标题翻译：用于抑制血液样品中糖酵解的装置
公开(公告)号：US5955371A
公开(公告)日：1999-09-21
申请号：US969628
申请日：1997-11-13
申请人： Tatsuhiko Ikeda , Ajit N. Dastane , Robert Losada
发明人： Tatsuhiko Ikeda , Ajit N. Dastane , Robert Losada
IPC分类号： G01N33/48 , A61B5/15 , A61J3/00 , B01L3/14 , C12Q1/56 , G01N33/50
CPC分类号： B01L3/5082 , A61B5/15003 , A61B5/150351 , A61B5/150755 , A61B5/153 , A61B5/154 , C12Q1/56 , G01N2400/40 , Y10T436/108331 , Y10T436/2525
摘要： A blood collection device comprising formed additive particles. The additive particles are an improvement over available additive formulations that are powder blended in that the components of the additive particles of the present invention are in each formed particle. The formed additive particles comprise a fluoride salt and an ethylenediaminetetraacetate salt or a heparin salt to consistently minimize glycolysis and coagulation of a blood specimen with low hemolysis.
摘要翻译：一种采血装置，包括形成的添加剂颗粒。添加剂颗粒是相对于粉末混合的可用添加剂制剂的改进，因为本发明的添加剂颗粒的组分在每个形成的颗粒中。所形成的添加剂颗粒包括氟化物盐和乙二胺四乙酸盐或肝素盐，以一致地最小化具有低溶血性的血液标本的糖酵解和凝结。

7. 发明授权

US5893759A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5893759A
公开(公告)日：1999-04-13
申请号：US622641
申请日：1996-03-27
申请人： Tatsuhiko Ikeda , Shunji Kubo , Masao Yamawaki , Yasuki Yoshihisa
发明人： Tatsuhiko Ikeda , Shunji Kubo , Masao Yamawaki , Yasuki Yoshihisa
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L29/10 , H01L29/732 , H01L21/00
CPC分类号： H01L29/66272 , H01L29/1004 , H01L29/7322 , H01L21/26586
摘要： A depression having a depth not exceeding 0.1 .mu.m is formed on the surface of an epitaxial layer. An internal base region is formed just below the depression. An external base region is formed outside the depression. The depression having the above depth can suppress electric field at the end of the internal base in the neighborhood of the junction between the internal base region and the external base region.
摘要翻译：在外延层的表面上形成深度不超过0.1μm的凹陷。在凹陷下方形成内部基部区域。在凹部外形成外部基部区域。具有上述深度的凹陷可以抑制在内部基极区域和外部基极区域之间的接合附近的内部基底的端部处的电场。

8. 发明授权

US4857478A Method of manufacturing a semiconductor memory device 失效
标题翻译：制造半导体存储器件的方法
公开(公告)号：US4857478A
公开(公告)日：1989-08-15
申请号：US267374
申请日：1988-11-04
申请人： Kazuhito Niwano , Tatsuhiko Ikeda
发明人： Kazuhito Niwano , Tatsuhiko Ikeda
IPC分类号： H01L29/73 , H01L21/331 , H01L21/76 , H01L21/762 , H01L21/763 , H01L21/8229 , H01L27/06 , H01L27/10 , H01L27/102 , H01L29/732
CPC分类号： H01L21/8229 , H01L21/76202 , H01L21/763 , Y10S438/953
摘要： According to the present invention, a second conductivity type subcollector layer and a second conductivity type collector layer are sequentially formed on a first conductivity type semiconductor substrate and thereafter first and second insulation layers are simultaneously formed in a region corresponding to a memory element area and regions corresponding to prescribed regions of a peripheral circuit area within an upper layer part of the second conductivity type collector layer. Thus, the degree of integration is improved by simplification of manufacturing steps and reduction of the number of masking times.
摘要翻译：根据本发明，在第一导电型半导体衬底上依次形成第二导电型子集电极层和第二导电型集电体，然后在对应于存储元件区域和区域的区域中同时形成第一和第二绝缘层对应于第二导电类型集电体层的上层部分内的外围电路区域的规定区域。因此，通过简化制造步骤和减少掩蔽次数来提高集成度。

9. 发明授权

US4294707A Method for separating blood and a barrier device therefor 失效
标题翻译：血液分离方法及其屏障装置
公开(公告)号：US4294707A
公开(公告)日：1981-10-13
申请号：US131874
申请日：1980-03-19
申请人： Tatsuhiko Ikeda , Soichiro Terada
发明人： Tatsuhiko Ikeda , Soichiro Terada
IPC分类号： G01N33/48 , A61K35/14 , A61M1/02 , B01L3/14 , B04B5/02 , B01D21/26
CPC分类号： B01L3/50215 , Y10T436/255
摘要： Disclosed is a method for centrifuging serum which comprises steps of introducing a barrier having an elastic porous member at least at its principle part into a blood-collecting tube and centrifuging serum, the elastic porous member having porosity of 40% or more, continuous-pore size of 50 to 400 .mu., and a cross section larger than that of the blood-collecting tube. Also disclosed is a barrier to be introduced into a blood-collecting tube, comprising an elastic porous member having porosity of 40% or more, continuous-pore size of 50 to 400 .mu., and a cross section larger than that of the blood-collecting tube, the bottom portion of the elastic porous member preferably being a relatively hard portion with smaller outside diameter.
摘要翻译：公开了一种离心血清的方法，包括以下步骤：至少在其主要部分将具有弹性多孔构件的屏障引入采血管和离心血清，所述弹性多孔构件的孔隙率为40％以上，连续孔尺寸为50〜400μm，横截面大于集血管的截面。还公开了将导入血液收集管的障碍物，其包括具有40％以上的孔隙率的弹性多孔构件，连续孔径为50〜400μm，截面积大于采血量弹性多孔构件的底部优选为具有较小外径的较硬的部分。

10. 发明申请

US20070205487A1 LATERAL BIPOLAR TRANSISTOR 失效
标题翻译：横向双极晶体管
公开(公告)号：US20070205487A1
公开(公告)日：2007-09-06
申请号：US11682126
申请日：2007-03-05
申请人： Tatsuhiko Ikeda
发明人： Tatsuhiko Ikeda
IPC分类号： H01L27/082
CPC分类号： H01L27/0623 , H01L21/8222 , H01L21/8249 , H01L21/84 , H01L27/082 , H01L27/1203
摘要： A P+ base drawing diffusion region is formed on a substrate having an SOI structure. N+ emitter diffusion regions are formed on both sides of the P+ base drawing diffusion region through isolation insulating films interposed therebetween. A P type SOI layer, which serves as a base diffusion region, is formed so as to surround the N+ emitter diffusion regions, and conductive layers are formed thereon. Further, an N+ collector diffusion region is formed so as to surround the conductive layers.
摘要翻译：在具有SOI结构的基板上形成P +基图形扩散区域。通过隔离绝缘膜，在P +基底拉伸扩散区域的两侧形成N +发射极扩散区。形成用作基极扩散区域的P型SOI层，以包围N +发射极扩散区域，并在其上形成导电层。此外，形成N +集电极扩散区域以包围导电层。

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