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1. 发明授权

US06728157B2 Semiconductor memory 有权
公开(公告)号：US06728157B2
公开(公告)日：2004-04-27
申请号：US10335948
申请日：2003-01-03
申请人： Yoshimasa Yagishita , Toshiya Uchida , Yoshihide Bando , Hiroyuki Kobayashi , Shusaku Yamaguchi , Masaki Okuda
发明人： Yoshimasa Yagishita , Toshiya Uchida , Yoshihide Bando , Hiroyuki Kobayashi , Shusaku Yamaguchi , Masaki Okuda
IPC分类号： G11C700
CPC分类号： G11C11/4087 , G11C11/406
摘要： A plurality of memory blocks is allocated the same address spaces to write the same data therein, and is operable independently of one another. One of the memory blocks is selected as a refresh block that performs a refresh operation, in response to a refresh command, while another one of the memory blocks is selected as a read block that performs a read operation, in response to a read command. Then, the plurality of memory blocks performs read operations at different timings so that the read operations overlap one another. Therefore, the semiconductor memory can receive read commands at intervals each of which is shorter than the execution time of a single read operation. As a result, externally supplied read commands can be responded to at high speed, and the data transmission rate during read operation can be improved.

2. 发明授权

US06754126B2 Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US06754126B2
公开(公告)日：2004-06-22
申请号：US10106597
申请日：2002-03-27
申请人： Shusaku Yamaguchi , Toshiya Uchida , Yoshimasa Yagishita , Yoshihide Bando , Masahiro Yada , Masaki Okuda , Hiroyuki Kobayashi , Kota Hara , Shinya Fujioka , Waichiro Fujieda
发明人： Shusaku Yamaguchi , Toshiya Uchida , Yoshimasa Yagishita , Yoshihide Bando , Masahiro Yada , Masaki Okuda , Hiroyuki Kobayashi , Kota Hara , Shinya Fujioka , Waichiro Fujieda
IPC分类号： G11C700
CPC分类号： G11C7/1006 , G11C8/12 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/40618 , G11C11/4087 , G11C2211/4061 , G11C2211/4062
摘要： A plurality of first memory blocks and a second memory block for reproducing data of the first memory blocks are formed. When a read command and a refresh command conflict with each other, a read control circuit accesses the first memory block according to the refresh command and reproduces read data by using the second memory block. When a write command and the refresh command conflict with each other, a write control circuit operates the memory block according to an order of command reception. Therefore, it is possible to perform refresh operation without being recognized by users. Namely, a user-friendly semiconductor memory can be provided.
摘要翻译：形成多个第一存储块和用于再现第一存储块的数据的第二存储块。当读命令和刷新命令彼此冲突时，读控制电路根据刷新命令访问第一存储块，并通过使用第二存储块再现读数据。当写命令和刷新命令彼此冲突时，写控制电路根据命令接收的顺序操作存储块。因此，可以在不被用户识别的情况下进行刷新操作。即，可以提供用户友好的半导体存储器。

3. 发明授权

US6104659A Memory device 有权
标题翻译：内存设备
公开(公告)号：US6104659A
公开(公告)日：2000-08-15
申请号：US338599
申请日：1999-06-23
申请人： Yoshimasa Yagishita , Toshiya Uchida , Masaki Okuda
发明人： Yoshimasa Yagishita , Toshiya Uchida , Masaki Okuda
IPC分类号： G11C11/413 , G05F1/00 , G11C5/14 , G11C11/401 , G11C11/406 , G11C11/407 , G11C7/00
CPC分类号： G11C5/143 , G11C5/147
摘要： A memory device comprises: a plurality of banks each of which includes an array of memory cells; and at least a first and a second internal power generator, provided for each of the plurality of banks, for generating an internal power source voltage which differs from a voltage supplied by an external power source. If the internal common power source voltage in the memory device is lower than the first voltage when the power is on, the first and the second internal power generators in a plurality of banks are activated so as to rapidly raise the common internal power source voltage. When the common internal power source voltage in the memory device is higher than the first voltage and lower than the second voltage, the second internal power generators in the banks are activated to compensate for a drop in the internal power source voltage, which is caused by current leakage. When the internal power source voltage in a bank in the activated state is lower than the third voltage, the first and the second internal power generators in the corresponding bank are activated and satisfactorily drive the internal power source voltage in the bank so as to operate the memory device at a high speed.
摘要翻译：存储器件包括：多个存储体，每个存储体包括存储器单元的阵列; 以及为多个组中的每一个提供的至少第一和第二内部发电机，用于产生不同于由外部电源提供的电压的内部电源电压。如果在电源接通时存储器件内部的公共电源电压低于第一电压，则多个组中的第一和第二内部发电机被激活，以便迅速提高公共内部电源电压。当存储器件中的公共内部电源电压高于第一电压并低于第二电压时，该组中的第二内部发电机被激活以补偿内部电源电压的下降，这是由电流泄漏。当处于激活状态的组中的内部电源电压低于第三电压时，相应组中的第一和第二内部发电机被激活并令人满意地驱动组中的内部电源电压，以便操作高速存储设备。

4. 发明授权

US06999358B2 Semiconductor memory device 失效
公开(公告)号：US06999358B2
公开(公告)日：2006-02-14
申请号：US10671473
申请日：2003-09-29
申请人： Yoshimasa Yagishita , Toshiya Uchida
发明人： Yoshimasa Yagishita , Toshiya Uchida
IPC分类号： G11C7/00 , G11C7/02 , G11C8/00 , G11C5/06
CPC分类号： G11C29/80 , G11C29/848
摘要： A semiconductor memory device that reduces the probability of the penalties of wirings arising. An address input circuit receives an address signal input. A drive circuit drives a memory array in compliance with the address signal. A signal line connects the address input circuit and the drive circuit. A redundant circuit is located near the drive circuit and substitutes other lines including a redundant line for a defective line in the memory array. A defective line information store circuit stores information showing the defective line. A supply circuit supplies information stored in the defective line information store circuit to the redundant circuit via the signal line. This structure enables to transmit an address signal and information regarding a defective line by a common signal line and to reduce the number of wirings and the probability of the penalties of wirings arising.

5. 发明授权

US06876225B2 Input/output interfacing circuit, input/output interface, and semiconductor device having input/out interfacing circuit 失效
标题翻译：输入/输出接口电路，输入/输出接口和具有输入/输出接口电路的半导体器件
公开(公告)号：US06876225B2
公开(公告)日：2005-04-05
申请号：US10178559
申请日：2002-06-25
申请人： Yoshimasa Yagishita , Toshiya Uchida
发明人： Yoshimasa Yagishita , Toshiya Uchida
IPC分类号： G06F3/00 , H03K19/00 , H03K19/0175 , H03K19/20 , H03K17/16
CPC分类号： H03K19/0002 , H03K19/017509
摘要： The current generating unit in the transmitter generates output currents in accordance with a plurality of logic values. The reference current generating unit in the receiver generates a plurality of reference currents. The current comparing units in the receiver respectively compares reference currents with output current from the transmitter and restores the logic values. That is, the current is varied in correspondence with the logic values that are transmitted from the transmitter to the receiver, wherein the logic values are restored in the receiver according to a difference in the current value. Forming a plurality of current comparing units in the receiver makes it possible to easily compare the values of the output current from the transmitter and a plurality of reference currents. Therefore, the number of multi-valued bits can be easily increased so as to construct a high bit-rate multi-valued input/output interface.
摘要翻译：发射机中的电流产生单元根据多个逻辑值产生输出电流。接收器中的参考电流产生单元产生多个参考电流。接收器中的当前比较单元分别将参考电流与来自发射器的输出电流进行比较，并恢复逻辑值。也就是说，电流根据从发射机发送到接收机的逻辑值而变化，其中根据当前值的差异在接收机中恢复逻辑值。在接收机中形成多个电流比较单元使得可以容易地比较来自发射器的输出电流和多个参考电流的值。因此，可以容易地增加多值比特的数量，以便构成高比特率多值输入/输出接口。

6. 发明授权

US06696859B2 Input/output interfacing circuit, input/output interface, and semiconductor device having input/out interfacing circuit 有权
标题翻译：输入/输出接口电路，输入/输出接口和具有输入/输出接口电路的半导体器件
公开(公告)号：US06696859B2
公开(公告)日：2004-02-24
申请号：US10178519
申请日：2002-06-25
申请人： Yoshimasa Yagishita , Toshiya Uchida
发明人： Yoshimasa Yagishita , Toshiya Uchida
IPC分类号： H03K190175
CPC分类号： H03K19/0002 , H03K19/017509
摘要： The current generating unit in the transmitter generates output currents in accordance with a plurality of logic values. The reference current generating unit in the receiver generates a plurality of reference currents. The current comparing units in the receiver respectively compares reference currents with output current from the transmitter and restores the logic values. That is, the current is varied in correspondence with the logic values that are transmitted from the transmitter to the receiver, wherein the logic values are restored in the receiver according to a difference in the current value. Forming a plurality of current comparing units in the receiver makes it possible to easily compare the values of the output current from the transmitter and a plurality of reference currents. Therefore, the number of multi-valued bits can be easily increased so as to construct a high bit-rate multi-valued input/output interface.
摘要翻译：发射机中的电流产生单元根据多个逻辑值产生输出电流。接收器中的参考电流产生单元产生多个参考电流。接收器中的当前比较单元分别将参考电流与来自发射器的输出电流进行比较，并恢复逻辑值。也就是说，电流根据从发射机发送到接收机的逻辑值而变化，其中根据当前值的差异在接收机中恢复逻辑值。在接收机中形成多个电流比较单元使得可以容易地比较来自发射器的输出电流和多个参考电流的值。因此，可以容易地增加多值比特的数量，以便构成高比特率多值输入/输出接口。

7. 发明授权

US06654298B2 Semiconductor memory device 有权
公开(公告)号：US06654298B2
公开(公告)日：2003-11-25
申请号：US09988614
申请日：2001-11-20
申请人： Yoshimasa Yagishita , Toshiya Uchida
发明人： Yoshimasa Yagishita , Toshiya Uchida
IPC分类号： G11C700
CPC分类号： G11C29/80 , G11C29/848
摘要： A semiconductor memory device that reduces the probability of the penalties of wirings arising. An address input circuit receives an address signal input. A drive circuit drives a memory array in compliance with the address signal. A signal line connects the address input circuit and the drive circuit. A redundant circuit is located near the drive circuit and substitutes other lines including a redundant line for a defective line in the memory array. A defective line information store circuit stores information showing the defective line. A supply circuit supplies information stored in the defective line information store circuit to the redundant circuit via the signal line. This structure enables to transmit an address signal and information regarding a defective line by a common signal line and to reduce the number of wirings and the probability of the penalties of wirings arising.

8. 发明授权

US06529435B2 Semiconductor memory device 有权
公开(公告)号：US06529435B2
公开(公告)日：2003-03-04
申请号：US10000313
申请日：2001-12-04
申请人： Yoshimasa Yagishita , Toshiya Uchida
发明人： Yoshimasa Yagishita , Toshiya Uchida
IPC分类号： G11C700
CPC分类号： G11C11/406 , G11C7/1006 , G11C11/4096 , G11C2211/4062
摘要： A semiconductor memory device which permits access even during refresh operation and also is low in power consumption. An address input circuit receives an input address, and a readout circuit reads out data from at least part of a subblock group arranged in a column or row direction and specified by the address input via the address input circuit. A refresh circuit refreshes at least part of a subblock group arranged in a row or column direction and intersecting with the subblock group from which data is read out by the readout circuit. A data restoration circuit restores data of a subblock where refresh operation and readout operation take place concurrently, with reference to data from the other subblocks and a parity block.

9. 发明授权

US6137348A Semiconductor device for generating two or more different internal voltages 失效
标题翻译：用于产生两个或多个不同内部电压的半导体器件
公开(公告)号：US6137348A
公开(公告)日：2000-10-24
申请号：US204171
申请日：1998-12-03
申请人： Toshiya Uchida , Yoshimasa Yagishita
发明人： Toshiya Uchida , Yoshimasa Yagishita
IPC分类号： G11C11/413 , G05F1/46 , G11C5/14 , G11C11/401 , G11C11/407 , G11C29/06 , G05F1/10
CPC分类号： G05F1/465
摘要： A novel semiconductor device having two different power circuits is disclosed. Even if the output of the stage before a voltage conversion circuit declines due to the decline of the level of the power circuits or the voltage drop through a resistor, the voltage conversion circuit performs a normal operation. The semiconductor device comprises a first power circuit for generating a first source voltage, a second power circuit for generating a second source voltage higher than the first source voltage, and a second power level detection circuit for detecting the second source voltage. The first power circuit changes the first source voltage in accordance with the result of detection by the second power level detection circuit.
摘要翻译：公开了一种具有两个不同功率电路的新型半导体器件。即使由于电源电路的电平下降或通过电阻器的电压降而在电压转换电路之前的级的输出下降，所以电压转换电路执行正常操作。半导体器件包括用于产生第一源电压的第一电源电路，用于产生高于第一源电压的第二源电压的第二电源电路，以及用于检测第二源电压的第二功率电平检测电路。第一电源电路根据第二功率电平检测电路的检测结果改变第一电源电压。

10. 发明授权

US06629224B1 Method for operating a semiconductor memory device having a plurality of operating modes for controlling an internal circuit 有权
标题翻译：一种用于操作具有用于控制内部电路的多种操作模式的半导体存储器件的方法
公开(公告)号：US06629224B1
公开(公告)日：2003-09-30
申请号：US09562739
申请日：2000-05-01
申请人： Takaaki Suzuki , Toshiya Uchida , Kotoku Sato , Yoshimasa Yagishita
发明人： Takaaki Suzuki , Toshiya Uchida , Kotoku Sato , Yoshimasa Yagishita
IPC分类号： G06F1200
CPC分类号： G11C11/406 , G11C5/066 , G11C11/40603 , G11C11/40611
摘要： Signals supplied to predetermined terminals are accepted as commands at a plurality of times, the number of operating modes is sequentially narrowed down based on the command each time and an internal circuit is controlled according to the narrowed operating modes. Since the information necessary for determining an operating mode is accepted at a plurality of times, the number of terminals necessary for inputting commands can be reduced. In particular, in case of inputting commands at a dedicated terminal, its input pads, input circuits, or the like are no longer be required so that the chip size can be reduced. The reduction is accomplished by reducing the number of terminals, which gives limits to the package size. The command controlling circuit with a plurality of accepting circuits is comprised. Each of the accepting circuits respectively accepts signals, supplied at a plurality of times, each time. In other words, in accordance with the timing of the signal supplement, a different accepting circuit is respectively operated and the internal circuit is controlled. Accordingly, a command controlling circuit may be readily designed even in the semiconductor memory device having a complicated command combination. Consequently, it is able to facilitate the verification of the design.
摘要翻译：提供给预定端子的信号被多次接受为命令，每次基于该命令并且根据变窄的操作模式控制内部电路，操作模式的数量依次变窄。由于多次接受确定操作模式所需的信息，因此可以减少输入命令所需的终端数量。特别地，在专用端子输入命令的情况下，不再需要其输入焊盘，输入电路等，从而可以减小芯片尺寸。通过减少端子数量来实现减少，这限制了封装尺寸。包括具有多个接受电路的指令控制电路。每个接收电路分别接收每次多次提供的信号。换句话说，根据信号补充的定时，分别操作不同的接受电路，并且控制内部电路。因此，即使在具有复杂的指令组合的半导体存储器件中，也可以容易地设计指令控制电路。因此，它能够方便验证设计。

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