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1. 发明申请

US20090147816A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20090147816A1
公开(公告)日：2009-06-11
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

2. 发明授权

US07792173B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07792173B2
公开(公告)日：2010-09-07
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko Iga , Yutaka Inoue , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko Iga , Yutaka Inoue , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

3. 发明授权

US08494019B2 Multi-beam semiconductor laser device 有权
标题翻译：多光束半导体激光器件
公开(公告)号：US08494019B2
公开(公告)日：2013-07-23
申请号：US12750838
申请日：2010-03-31
申请人： Yoshihiko Iga , Hiroshi Moriya , Yutaka Inoue , Hideki Hara , Keiichi Miyauchi
发明人： Yoshihiko Iga , Hiroshi Moriya , Yutaka Inoue , Hideki Hara , Keiichi Miyauchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/0425
摘要： Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a groove portion 9 between the supporting portion 25 neighboring and the light emitting portions 7.
摘要翻译：在半导体激光器件中，将多光束结构的半导体激光元件阵列安装在子座上，多光束结构的半导体激光元件阵列包括一片半导体衬底11; 公共电极1，形成在半导体衬底的第一表面上; 半导体层2，其形成在半导体衬底的另一个表面上，并且在其内部具有多个发光部分7; 分别形成在多个发光部分上方的多个第二导电类型的阳极电极3; 以及支撑部25，其设置在形成发光部的区域的外侧，其中，在所述副安装座的一个表面上，通过焊料4与所述半导体激光元件阵列的电极3连接，形成所述焊料4 覆盖支撑部分和与其相邻的电极，并且在电极3上还形成有在相邻的支撑部分25和发光部分7之间的槽部分9。

4. 发明申请

US20090294228A1 Disc rotor for disc brake 审中-公开
标题翻译：盘式制动盘式转子
公开(公告)号：US20090294228A1
公开(公告)日：2009-12-03
申请号：US12453987
申请日：2009-05-28
申请人： Yoshihiko Iga , Hiroshi Moriya , Makoto Ebihara , Kazuya Baba
发明人： Yoshihiko Iga , Hiroshi Moriya , Makoto Ebihara , Kazuya Baba
IPC分类号： F16D65/847
CPC分类号： F16D65/128 , F16D2065/1308 , F16D2065/1328 , F16D2200/0013 , F16D2200/0039
摘要： A disc rotor for a disc brake with a vent hole shape which has an inner peripheral corner with a larger radius to reduce stress generated by braking torque and suppresses an increase in stress generated by pad pressure. The disc rotor includes a first sliding part connected to a bell housing, a second sliding part located parallel to, and spaced in an axle direction from, the first sliding part, a plurality of ribs circumferentially spaced between the sliding parts, and vent holes formed by the ribs and the sliding parts. The inner peripheral shape of each of the vent holes has at least two arc shapes with different curvature radii at an end perpendicular to the disc rotor's rotation direction. The smallest curvature radius is 2 mm or more. An arc curvature radius on the first sliding part side is larger than that on the second sliding part side.
摘要翻译：一种用于具有通气孔形状的盘式制动器的盘式转子，其具有较大半径的内周角，以减少由制动转矩产生的应力，并抑制由压力产生的应力增加。圆盘转子包括连接到钟罩壳体的第一滑动部件，与第一滑动部件平行并与轴向隔开的第二滑动部件，在滑动部件之间周向间隔开的多个肋条和形成的通气孔通过肋和滑动部件。每个通气孔的内周形状在垂直于盘转子的旋转方向的端部具有至少两个具有不同曲率半径的弧形。最小曲率半径为2mm以上。第一滑动部侧的弧曲率半径大于第二滑动部侧的弧曲率半径。

5. 发明申请

US20080061384A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080061384A1
公开(公告)日：2008-03-13
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/78
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

6. 发明申请

US20080006851A1 Non-volatile phase-change memory and manufacturing method thereof 审中-公开
标题翻译：非易失性相变存储器及其制造方法
公开(公告)号：US20080006851A1
公开(公告)日：2008-01-10
申请号：US11825401
申请日：2007-07-06
申请人： Hiroshi Moriya , Tomio Iwasaki
发明人： Hiroshi Moriya , Tomio Iwasaki
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a non-volatile phase-change memory comprising: an interlayer dielectric film and a plug formed on one main surface side of a silicon substrate; a phase-change film which can take a different electric resistivity depending on a phase change and is provided on surfaces of the interlayer dielectric film and the plug; and an upper electrode film formed on an upper surface of the phase-change film, a relation between a film thickness of the phase-change film and an amount of protrusion of the upper electrode film from the plug is set to 0.3≦L/T≦1. Thus, a density of current flowing through the phase-change film near the outer periphery of the plug is reduced, thereby suppressing migration and enabling rewriting with low energy. Accordingly, a reliable non-volatile phase-change memory can be achieved.
摘要翻译：一种非易失性相变存储器，包括：层间电介质膜和形成在硅衬底的一个主表面侧上的插塞; 可以根据相变取得不同的电阻率并设置在层间绝缘膜和插头的表面上的相变膜; 以及形成在相变膜的上表面上的上电极膜，相变膜的膜厚与上电极膜与插塞的突出量之间的关系设定为0.3 <= L / T <= 1。因此，流过插塞外周附近的相变膜的电流密度降低，从而抑制迁移并能够以低能量进行重写。因此，可以实现可靠的非易失性相变存储器。

7. 发明授权

US06963593B2 Semiconductor laser module and optical transmitter 有权
标题翻译：半导体激光模块和光发射机
公开(公告)号：US06963593B2
公开(公告)日：2005-11-08
申请号：US10632350
申请日：2003-07-31
申请人： Hiroshi Moriya , Kisho Ashida , Toshiaki Ozaki
发明人： Hiroshi Moriya , Kisho Ashida , Toshiaki Ozaki
IPC分类号： G02B6/42 , H01S5/022 , H01S5/00 , H01S3/04
CPC分类号： H01S5/02216 , H01S5/02284
摘要： For preventing an optical axis from shifting due to a heat cycle in a semiconductor laser module, or in a optical transmitter, the semiconductor laser module comprises, a semiconductor laser element, a frame for storing the semiconductor laser element therein, an optical fiber fixing portion being connected to the frame; and a flange being connected to the frame, and having a fixing portion for fixing the frame on a substrate, wherein the flange has a narrow width region between a fixing region, including a foxing portion with the substrate therein, and the frame, and the narrow width region is narrower than width of the fixing region.
摘要翻译：为了防止光轴由于半导体激光器模块或光发射器中的热循环而偏移，半导体激光器模块包括半导体激光元件，用于存储半导体激光元件的框架，光纤固定部分连接到框架; 和凸缘连接到框架上，并具有用于将框架固定在基板上的固定部分，其中凸缘在包括具有其中的基板的一个固定区域和该框架之间的窄的区域之间具有窄的宽度区域，窄宽度区域比固定区域的宽度窄。

8. 发明授权

US06943076B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06943076B2
公开(公告)日：2005-09-13
申请号：US09943843
申请日：2001-08-30
申请人： Tomio Iwasaki , Hideo Miura , Hiroyuki Ohta , Hiroshi Moriya
发明人： Tomio Iwasaki , Hideo Miura , Hiroyuki Ohta , Hiroshi Moriya
IPC分类号： H01L29/43 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/336
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L27/10873 , H01L27/10882 , H01L29/4966 , H01L29/513
摘要： Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.
摘要翻译：在半导体衬底的一个主表面上形成各自含有氧化钛作为主要构成材料的栅极绝缘膜。形成与栅极绝缘膜接触的栅极电极膜。栅极电极膜含有氧化钌或氧化铱作为主要构成材料。为了防止导电元件扩散到栅极绝缘膜的氧化钛中，氧化钌或氧化铱被有效地用作栅电极的主要构成材料。可以实现半导体器件，其中通过在保持期望的介电特性的同时增加物理膜厚度来抑制泄漏电流的发生。

9. 发明申请

US20050051855A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050051855A1
公开(公告)日：2005-03-10
申请号：US10910574
申请日：2004-08-04
申请人： Yoshiharu Kanegae , Tomio Iwasaki , Hiroshi Moriya
发明人： Yoshiharu Kanegae , Tomio Iwasaki , Hiroshi Moriya
IPC分类号： H01L21/283 , H01L21/28 , H01L21/314 , H01L21/3205 , H01L21/8234 , H01L21/8238 , H01L21/8247 , H01L23/52 , H01L27/04 , H01L27/088 , H01L27/115 , H01L29/417 , H01L29/51 , H01L29/76 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28035 , H01L21/28202 , H01L21/823456 , H01L21/823462 , H01L21/82385 , H01L21/823857 , H01L27/115 , H01L29/518 , H01L29/7842 , H01L29/7845 , H01L29/7881
摘要： A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
摘要翻译：半导体器件构成具有半导体衬底，形成在衬底上的栅极绝缘层和形成在栅极绝缘层上的栅电极的电场效应型晶体管。栅极绝缘层主要由氮氧化硅（SiON）形成，并且栅极绝缘层的应变状态是压缩应变状态。

10. 发明授权

US08049777B2 Insertion support system for specifying a location of interest as an arbitrary region and also appropriately setting a navigation leading to the specified region 有权
标题翻译：插入支持系统，用于将感兴趣的位置指定为任意区域，并且还适当地设置导向指定区域的导航
公开(公告)号：US08049777B2
公开(公告)日：2011-11-01
申请号：US11412397
申请日：2006-04-27
申请人： Shunya Akimoto , Junichi Ohnishi , Fumihiro Asano , Hiroshi Moriya , Koichi Yamazaki , Takashi Ishida
发明人： Shunya Akimoto , Junichi Ohnishi , Fumihiro Asano , Hiroshi Moriya , Koichi Yamazaki , Takashi Ishida
IPC分类号： A62B1/04
CPC分类号： A61B1/2676 , A61B5/06 , A61B6/00 , A61B90/10
摘要： According to an insertion support system of the present invention, when a biopsy area is specified at a periphery of the bronchi, the barycenter of the biopsy area is extracted. A circle centering on the barycenter is determined as a search area. The search area is expanded until the bronchi are located within the search area. A point in the search area to which the bronchi first reach is determined as an end point. A first route choice connecting the end point and a start point is determined. If the first route choice has not been registered yet, the first route choice is registered as a first registered route. Accordingly, a location of interest can be specified as an arbitrary region, and navigation leading to the specified region is appropriately set.
摘要翻译：根据本发明的插入支撑系统，当在支气管周边指定活检区域时，提取活检区域的重心。以重心为中心的圆确定为搜索区域。搜索区域扩展到支气管位于搜索区域内。支气管首先到达的检索区域的一个点被确定为终点。确定连接终点和起始点的第一路线选择。如果第一路线选择尚未登记，则将第一路线选择登记为第一登记路线。因此，可以将感兴趣的位置指定为任意区域，并且适当地设定导向指定区域的导航。

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