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1. 发明申请

US20090147816A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20090147816A1
公开(公告)日：2009-06-11
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

2. 发明申请

US20100254421A1 MULTI-BEAM SEMICONDUCTOR LASER DEVICE 有权
标题翻译：多光子半导体激光器件
公开(公告)号：US20100254421A1
公开(公告)日：2010-10-07
申请号：US12750838
申请日：2010-03-31
申请人： Yoshihiko IGA , Hiroshi MORIYA , Yutaka INOUE , Hideki HARA , Keiichi MIYAUCHI
发明人： Yoshihiko IGA , Hiroshi MORIYA , Yutaka INOUE , Hideki HARA , Keiichi MIYAUCHI
IPC分类号： H01S5/40
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/0425
摘要： Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a groove portion 9 between the supporting portion 25 neighboring and the light emitting portions 7.
摘要翻译：在半导体激光器件中，将多光束结构的半导体激光元件阵列安装在子座上，多光束结构的半导体激光元件阵列包括一片半导体衬底11; 公共电极1，形成在半导体衬底的第一表面上; 半导体层2，其形成在半导体衬底的另一个表面上，并且在其内部具有多个发光部分7; 分别形成在多个发光部分上方的多个第二导电类型的阳极电极3; 以及支撑部25，其设置在形成发光部的区域的外侧，其中，在所述副安装座的一个表面上，通过焊料4与所述半导体激光元件阵列的电极3连接，形成所述焊料4 覆盖支撑部分和与其相邻的电极，并且在电极3上还形成有在相邻的支撑部分25和发光部分7之间的槽部分9。

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