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    • 2. 发明授权
    • One time programmable semiconductor nonvolatile memory device and method for production of same
    • 一次可编程半导体非易失性存储器件及其制造方法
    • US06800527B2
    • 2004-10-05
    • US10366564
    • 2003-02-14
    • Yoshiaki HagiwaraHideaki KurodaMichitaka KubotaAkira Nakagawara
    • Yoshiaki HagiwaraHideaki KurodaMichitaka KubotaAkira Nakagawara
    • H01L218236
    • G11C17/16G11C2213/33G11C2213/71G11C2213/77G11C2213/79H01L27/112H01L2224/48091H01L2225/06568H01L2924/13091H01L2924/00014H01L2924/00
    • A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.
    • 一种提高氧化硅膜的绝缘破坏的再现性和可靠性的能够降低制造成本的半导体非易失性存储器件及其制造方法,其中以矩阵形式布置的每个存储单元具有绝缘膜破损型 保险丝,其包括形成在半导体衬底上的第一导电类型的杂质区,形成在所述半导体衬底上的第一绝缘膜,同时覆盖所述杂质区;形成在所述第一绝缘膜中的开口以到达所述杂质区;以及第一绝缘膜 第一导电类型的半导体层,第二绝缘膜和第二导电类型的第二半导体层,其从杂质区侧连续地堆叠在开口中,或者具有包含第一导电性的杂质区的绝缘膜断裂型熔丝 键入具有SOI结构的第一半导体层,第一绝缘膜 在SOI层上,到达杂质区的开口,以及层叠在开口中的第二绝缘膜和第二导电类型的第二半导体层。
    • 3. 发明申请
    • SCREENING METHOD FOR THERAPEUTIC AGENT FOR AMYOTROPHIC LATERAL SCLEROSIS
    • 用于治疗前列腺切除术的治疗方法的筛选方法
    • US20100055691A1
    • 2010-03-04
    • US12439760
    • 2007-08-24
    • Akira NakagawaraTian-Ling LiuTadayuki Koda
    • Akira NakagawaraTian-Ling LiuTadayuki Koda
    • C12Q1/68G01N33/53
    • G01N33/6896G01N2333/9121G01N2800/2814
    • The objective of the present invention is to provide methods of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis (ALS2). The invention provides a method of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis, comprising a step of assessing a substance that suppresses the expression of Tollip in cells as a therapeutic agent for juvenile familial amyotrophic lateral sclerosis; a method of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis, comprising a step of assessing a substance that promotes migration of Tollip in cells from the cytoplasm to the cell nucleus as a therapeutic agent for juvenile familial amyotrophic lateral sclerosis; and a method of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis, comprising a step of assessing a substance that inhibits the interaction between Tollip and IRAK-1 in cells as a therapeutic agent for juvenile familial amyotrophic lateral sclerosis.
    • 本发明的目的是提供筛选青少年家族性肌萎缩性侧索硬化症(ALS2)的治疗剂的方法。 本发明提供一种筛选青少年家族性肌萎缩性侧索硬化症的治疗剂的方法,包括评估抑制作为幼年家族性肌萎缩性侧索硬化症的治疗剂的细胞中Tollip的表达的物质的步骤; 筛选青少年家族性肌萎缩性侧索硬化症的治疗剂的方法,包括评估促进细胞中细胞中Tollip从细胞质迁移到细胞核的物质的步骤,作为青少年家族性肌萎缩性侧索硬化症的治疗剂; 以及筛选用于青少年家族性肌萎缩性侧索硬化症的治疗剂的方法,包括评估抑制细胞中Tollip和IRAK-1之间相互作用的物质作为幼年家族性肌萎缩性侧索硬化症的治疗剂的步骤。
    • 6. 发明申请
    • Agent controlling the apoptosis induction by p73
    • 通过p73控制凋亡诱导的药剂
    • US20060240417A1
    • 2006-10-26
    • US10502449
    • 2003-01-23
    • Akira Nakagawara
    • Akira Nakagawara
    • C12Q1/68C07H21/04
    • C07K14/4747A61K48/00
    • Elucidation of the interaction between p73 and ΔNp73 on the genetic and protein level, regulators for p73 or p53 apoptosis-inducing activity, a method of accelerating apoptosis of tumor cells by utilizing the regulators, p53 and p73 transactivation regulators comprising the p73 gene and ΔNp73 gene, nucleic acid pharmaceutical compositions comprising compositions for gene therapy which act as the regulators, and a method of screening for the regulators. By forming a heterooligomer by a substance which binds with ΔNp73 promoter to p73 in an antagonistic manner in tumor cells (for example, nucleic acid including a base sequence which hybridizes to the base sequence listed as SEQ ID NO: 1) to control the promoter activity, it is possible to regulate the apoptosis-inducing activity of p73 and augment apoptosis of the tumor cells.
    • 阐明p73和DeltaNp73对遗传和蛋白质水平的相互作用,p73或p53凋亡诱导活性的调节因子,通过利用调节剂加速肿瘤细胞凋亡的方法,包含p73基因和DeltaNp73基因的p53和p73转移激活调节物 ,包含充当调节剂的用于基因治疗的组合物的核酸药物组合物,以及筛选调节剂的方法。 通过在肿瘤细胞(例如包含与SEQ ID NO:1所示的碱基序列杂交的碱基序列的核酸)中以拮抗方式与DeltaNp73启动子结合至p73的物质形成异寡聚体以控制启动子活性 ,可以调节p73的凋亡诱导活性,增加肿瘤细胞的凋亡。
    • 7. 发明授权
    • High density nonvolatile memory and decoder of the same
    • 高密度非易失性存储器和解码器相同
    • US5345416A
    • 1994-09-06
    • US928442
    • 1992-08-12
    • Akira Nakagawara
    • Akira Nakagawara
    • G11C17/00G11C8/12G11C16/02G11C16/04H01L21/8247H01L27/115G11C13/00
    • H01L27/115G11C16/0491G11C8/12
    • A non-volatile memory comprises memory cells M arranged in a matrix (MB), word lines (W1 to Wn) for row selection, sub-bit lines (B: B12, B21, B22, B31), sub-column lines (C: C11, C12, C22), a column selection circuit 1, a bit line selection circuit 2, and a column line selection circuit 3. The word lines (W1 to Wn) are used as gates common to the rows of the memory cells M, a group of sub-bit lines B and sub-column lines C is selected by the column selection circuit 1, an even-numbered or odd-numbered sub-bit line B is selected from each group and connected to any one of main bit lines (B1, B2 and B3) by the bit line selection circuit 2, and an even-numbered or odd-numbered sub-column line (C) is selected from each group and connected to any one of main column lines (C1 and C2) by the column line selection circuit 3.
    • 非易失性存储器包括以矩阵(MB)排列的存储单元M,用于行选择的字线(W1至Wn),子位线(B:B12,B21,B22,B31),子列线(C :C11,C12,C22),列选择电路1,位线选择电路2和列线选择电路3.字线(W1至Wn)用作存储单元M的行共用的门 ,通过列选择电路1选择一组子位线B和子列线C,从每组中选择偶数或奇数子位线B,并连接到主位 由位线选择电路2产生的线(B1,B2和B3),并且从每个组中选择偶数或奇数子列线(C),并连接到主列线(C1和C2)中的任何一个 )通过列线选择电路3。
    • 9. 发明授权
    • Microarray for predicting the prognosis of neuroblastoma and method for predicting the prognosis of neuroblastoma
    • 用于预测神经母细胞瘤预后的微阵列和预测神经母细胞瘤预后的方法
    • US07601532B2
    • 2009-10-13
    • US10947249
    • 2004-09-23
    • Akira NakagawaraMiki OhiraShin IshiiTakeshi GotoHiroyuki KuboTakahiro HirataYasuko YoshidaSaichi Yamada
    • Akira NakagawaraMiki OhiraShin IshiiTakeshi GotoHiroyuki KuboTakahiro HirataYasuko YoshidaSaichi Yamada
    • C12M3/00C12M1/34C07H21/02C07H21/04C12Q1/68
    • C12Q1/6883C12Q1/6886C12Q2600/118
    • A microarray for predicting the prognosis of neuroblastoma, wherein the microarray has 25 to 45 probes related to good prognosis, which are hybridized to a gene transcript whose expression is increased in a good prognosis patient with neuroblastoma and are selected from 96 polynucleotides consisting of the nucleotide sequences of SEQ. ID NOs. 1, 5, 6, 14. 16, 17, 19, 22-24, 28, 29, 31, 37, 39, 40, 43, 44, 47-52, 54, 57-60, 62, 64, 65, 67, 68, 72-75, 77, 78, 80-82, 84, 87, 89-91, 94, 100, 103, 112, 113, 118, 120, 129, 130, 132, 136, 138, 142, 144, 145, 148, 150-153, 155, 158-160, 163-165, 169-171, 173, 174, 177, 178, 180-182, 184, 186, 187, 189, 191, 192, 194, 195, 198-200 or their partial continuous sequences or their complementary strands, and 25 to 45 probes related to poor prognosis, which are hybridized to a gene transcript whose expression is increased in a poor prognosis patient with neuroblastoma and are selected from 104 polynucleotides consisting of the nucleotide sequences of SEQ. ID NOs. 2-4, 7-13, 15, 18, 20, 21, 25-27, 30, 32-36, 38, 41, 42, 45, 46, 53, 55, 56, 61, 63, 66, 69-71, 76, 79, 83, 85, 86, 88, 92, 93, 95-99, 101, 102, 104-111, 114-117, 119, 121-128, 131, 133-135, 137, 139-141, 143, 146, 147, 149, 154, 156, 157, 161, 162, 166-168, 172, 175, 176, 179, 183, 185, 188, 190, 193, 196, 197 or their partial continuous sequences or their complementary strands.
    • 一种用于预测神经母细胞瘤的预后的微阵列,其中所述微阵列具有与良好预后相关的25至45个探针,其与在具有神经母细胞瘤的良好预后患者中表达增加的基因转录物杂交,并且选自96个由核苷酸 SEQ。 身份证号 1,5,6,14,16,17,19,22-24,28,29,31,37,39,40,43,44,47-52,54,57-60,62,64,65, 67,68,72-75,77,78,80-82,84,87,89-91,94,100,103,112,113,118,120,129,130,132,136,138, 144,145,148,150-153,155,158-160,163-165,169-171,173,174,177,178,180-182,184,186,187,189,191,192,194, 195,198-200或其部分连续序列或其互补链,以及与不良预后相关的25至45个探针,其与在具有神经母细胞瘤的不良预后患者中表达增加的基因转录物杂交,并且选自104个多核苷酸 的SEQ ID NO: 身份证号 2-4,7-13,15,18,20,21,25-27,30,32-36,38,41,42,45,46,53,55,56,61,63,66,69- 71,76,79,83,85,86,88,92,93,95-99,101,102,104-111,114-117,119,121-128,131,133-135,137,139- 141,143,146,147,149,154,156,157,161,162,166-168,172,175,176,179,183,185,188,190,193,196,197或其部分连续序列 或其互补链。