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    • 1. 发明申请
    • SCREENING METHOD FOR THERAPEUTIC AGENT FOR AMYOTROPHIC LATERAL SCLEROSIS
    • 用于治疗前列腺切除术的治疗方法的筛选方法
    • US20100055691A1
    • 2010-03-04
    • US12439760
    • 2007-08-24
    • Akira NakagawaraTian-Ling LiuTadayuki Koda
    • Akira NakagawaraTian-Ling LiuTadayuki Koda
    • C12Q1/68G01N33/53
    • G01N33/6896G01N2333/9121G01N2800/2814
    • The objective of the present invention is to provide methods of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis (ALS2). The invention provides a method of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis, comprising a step of assessing a substance that suppresses the expression of Tollip in cells as a therapeutic agent for juvenile familial amyotrophic lateral sclerosis; a method of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis, comprising a step of assessing a substance that promotes migration of Tollip in cells from the cytoplasm to the cell nucleus as a therapeutic agent for juvenile familial amyotrophic lateral sclerosis; and a method of screening therapeutic agents for juvenile familial amyotrophic lateral sclerosis, comprising a step of assessing a substance that inhibits the interaction between Tollip and IRAK-1 in cells as a therapeutic agent for juvenile familial amyotrophic lateral sclerosis.
    • 本发明的目的是提供筛选青少年家族性肌萎缩性侧索硬化症(ALS2)的治疗剂的方法。 本发明提供一种筛选青少年家族性肌萎缩性侧索硬化症的治疗剂的方法,包括评估抑制作为幼年家族性肌萎缩性侧索硬化症的治疗剂的细胞中Tollip的表达的物质的步骤; 筛选青少年家族性肌萎缩性侧索硬化症的治疗剂的方法,包括评估促进细胞中细胞中Tollip从细胞质迁移到细胞核的物质的步骤,作为青少年家族性肌萎缩性侧索硬化症的治疗剂; 以及筛选用于青少年家族性肌萎缩性侧索硬化症的治疗剂的方法,包括评估抑制细胞中Tollip和IRAK-1之间相互作用的物质作为幼年家族性肌萎缩性侧索硬化症的治疗剂的步骤。
    • 4. 发明申请
    • Agent controlling the apoptosis induction by p73
    • 通过p73控制凋亡诱导的药剂
    • US20060240417A1
    • 2006-10-26
    • US10502449
    • 2003-01-23
    • Akira Nakagawara
    • Akira Nakagawara
    • C12Q1/68C07H21/04
    • C07K14/4747A61K48/00
    • Elucidation of the interaction between p73 and ΔNp73 on the genetic and protein level, regulators for p73 or p53 apoptosis-inducing activity, a method of accelerating apoptosis of tumor cells by utilizing the regulators, p53 and p73 transactivation regulators comprising the p73 gene and ΔNp73 gene, nucleic acid pharmaceutical compositions comprising compositions for gene therapy which act as the regulators, and a method of screening for the regulators. By forming a heterooligomer by a substance which binds with ΔNp73 promoter to p73 in an antagonistic manner in tumor cells (for example, nucleic acid including a base sequence which hybridizes to the base sequence listed as SEQ ID NO: 1) to control the promoter activity, it is possible to regulate the apoptosis-inducing activity of p73 and augment apoptosis of the tumor cells.
    • 阐明p73和DeltaNp73对遗传和蛋白质水平的相互作用,p73或p53凋亡诱导活性的调节因子,通过利用调节剂加速肿瘤细胞凋亡的方法,包含p73基因和DeltaNp73基因的p53和p73转移激活调节物 ,包含充当调节剂的用于基因治疗的组合物的核酸药物组合物,以及筛选调节剂的方法。 通过在肿瘤细胞(例如包含与SEQ ID NO:1所示的碱基序列杂交的碱基序列的核酸)中以拮抗方式与DeltaNp73启动子结合至p73的物质形成异寡聚体以控制启动子活性 ,可以调节p73的凋亡诱导活性,增加肿瘤细胞的凋亡。
    • 5. 发明授权
    • High density nonvolatile memory and decoder of the same
    • 高密度非易失性存储器和解码器相同
    • US5345416A
    • 1994-09-06
    • US928442
    • 1992-08-12
    • Akira Nakagawara
    • Akira Nakagawara
    • G11C17/00G11C8/12G11C16/02G11C16/04H01L21/8247H01L27/115G11C13/00
    • H01L27/115G11C16/0491G11C8/12
    • A non-volatile memory comprises memory cells M arranged in a matrix (MB), word lines (W1 to Wn) for row selection, sub-bit lines (B: B12, B21, B22, B31), sub-column lines (C: C11, C12, C22), a column selection circuit 1, a bit line selection circuit 2, and a column line selection circuit 3. The word lines (W1 to Wn) are used as gates common to the rows of the memory cells M, a group of sub-bit lines B and sub-column lines C is selected by the column selection circuit 1, an even-numbered or odd-numbered sub-bit line B is selected from each group and connected to any one of main bit lines (B1, B2 and B3) by the bit line selection circuit 2, and an even-numbered or odd-numbered sub-column line (C) is selected from each group and connected to any one of main column lines (C1 and C2) by the column line selection circuit 3.
    • 非易失性存储器包括以矩阵(MB)排列的存储单元M,用于行选择的字线(W1至Wn),子位线(B:B12,B21,B22,B31),子列线(C :C11,C12,C22),列选择电路1,位线选择电路2和列线选择电路3.字线(W1至Wn)用作存储单元M的行共用的门 ,通过列选择电路1选择一组子位线B和子列线C,从每组中选择偶数或奇数子位线B,并连接到主位 由位线选择电路2产生的线(B1,B2和B3),并且从每个组中选择偶数或奇数子列线(C),并连接到主列线(C1和C2)中的任何一个 )通过列线选择电路3。
    • 7. 发明授权
    • Microarray for predicting the prognosis of neuroblastoma and method for predicting the prognosis of neuroblastoma
    • 用于预测神经母细胞瘤预后的微阵列和预测神经母细胞瘤预后的方法
    • US07601532B2
    • 2009-10-13
    • US10947249
    • 2004-09-23
    • Akira NakagawaraMiki OhiraShin IshiiTakeshi GotoHiroyuki KuboTakahiro HirataYasuko YoshidaSaichi Yamada
    • Akira NakagawaraMiki OhiraShin IshiiTakeshi GotoHiroyuki KuboTakahiro HirataYasuko YoshidaSaichi Yamada
    • C12M3/00C12M1/34C07H21/02C07H21/04C12Q1/68
    • C12Q1/6883C12Q1/6886C12Q2600/118
    • A microarray for predicting the prognosis of neuroblastoma, wherein the microarray has 25 to 45 probes related to good prognosis, which are hybridized to a gene transcript whose expression is increased in a good prognosis patient with neuroblastoma and are selected from 96 polynucleotides consisting of the nucleotide sequences of SEQ. ID NOs. 1, 5, 6, 14. 16, 17, 19, 22-24, 28, 29, 31, 37, 39, 40, 43, 44, 47-52, 54, 57-60, 62, 64, 65, 67, 68, 72-75, 77, 78, 80-82, 84, 87, 89-91, 94, 100, 103, 112, 113, 118, 120, 129, 130, 132, 136, 138, 142, 144, 145, 148, 150-153, 155, 158-160, 163-165, 169-171, 173, 174, 177, 178, 180-182, 184, 186, 187, 189, 191, 192, 194, 195, 198-200 or their partial continuous sequences or their complementary strands, and 25 to 45 probes related to poor prognosis, which are hybridized to a gene transcript whose expression is increased in a poor prognosis patient with neuroblastoma and are selected from 104 polynucleotides consisting of the nucleotide sequences of SEQ. ID NOs. 2-4, 7-13, 15, 18, 20, 21, 25-27, 30, 32-36, 38, 41, 42, 45, 46, 53, 55, 56, 61, 63, 66, 69-71, 76, 79, 83, 85, 86, 88, 92, 93, 95-99, 101, 102, 104-111, 114-117, 119, 121-128, 131, 133-135, 137, 139-141, 143, 146, 147, 149, 154, 156, 157, 161, 162, 166-168, 172, 175, 176, 179, 183, 185, 188, 190, 193, 196, 197 or their partial continuous sequences or their complementary strands.
    • 一种用于预测神经母细胞瘤的预后的微阵列,其中所述微阵列具有与良好预后相关的25至45个探针,其与在具有神经母细胞瘤的良好预后患者中表达增加的基因转录物杂交,并且选自96个由核苷酸 SEQ。 身份证号 1,5,6,14,16,17,19,22-24,28,29,31,37,39,40,43,44,47-52,54,57-60,62,64,65, 67,68,72-75,77,78,80-82,84,87,89-91,94,100,103,112,113,118,120,129,130,132,136,138, 144,145,148,150-153,155,158-160,163-165,169-171,173,174,177,178,180-182,184,186,187,189,191,192,194, 195,198-200或其部分连续序列或其互补链,以及与不良预后相关的25至45个探针,其与在具有神经母细胞瘤的不良预后患者中表达增加的基因转录物杂交,并且选自104个多核苷酸 的SEQ ID NO: 身份证号 2-4,7-13,15,18,20,21,25-27,30,32-36,38,41,42,45,46,53,55,56,61,63,66,69- 71,76,79,83,85,86,88,92,93,95-99,101,102,104-111,114-117,119,121-128,131,133-135,137,139- 141,143,146,147,149,154,156,157,161,162,166-168,172,175,176,179,183,185,188,190,193,196,197或其部分连续序列 或其互补链。
    • 10. 发明授权
    • Method for producing a read-only memory having a plurality of MISFET
    • 一种具有多个MISFET的只读存储器的制造方法
    • US5278089A
    • 1994-01-11
    • US886737
    • 1992-05-21
    • Akira Nakagawara
    • Akira Nakagawara
    • G11C17/12H01L21/8246H01L27/112H01L21/70H01L27/00
    • G11C17/126Y10S438/981
    • A read-only memory device includes a number of MIS transistors forming memory cells arranged in a matrix configuration to provide a NOR type memory device with high current driving capability for the memory cells. Bit lines and column lines are arrayed alternately in common in each cell column so as to be used in common by adjacent memory cells in the word line extending direction. The bit lines for reading out signals from the memory cells function as the sources or drains of the MIS transistors of the memory cells, whereas the column lines for supplying the constant voltage to the memory cells function as the drains or sources of the MIS transistors of the memory cells. For column selection, there is provided a first selection switch for selecting a group consisting of a plurality of bit lines and a plurality of column lines. A second selection switch and a third selection switch are provided for selecting the bit line and the column line of the group, respectively. The second and the third selection switches may be arranged with a layout allowance and, if these second and third selection switches are formed by MIS transistors similar to those of the memory cells, the direction in common with the memory cells may be the channel direction to contribute to improved circuit integration. The MIS transistor constituting the memory cell may be of such a construction in which the source and drain regions may be provided below the thick insulating film formed on the substrate surface, such as field oxide film.
    • 只读存储器件包括多个MIS晶体管,形成以矩阵配置布置的存储器单元,以为存储器单元提供具有高电流驱动能力的NOR型存储器件。 位线和列线在每个单元列中共同交替排列,以便在字线延伸方向上被相邻存储单元共同使用。 用于从存储器单元读出信号的位线用作存储器单元的MIS晶体管的源极或漏极,而用于向存储器单元提供恒定电压的列线用作MIS晶体管的漏极或源极 记忆细胞。 为了列选择,提供了用于选择由多个位线和多个列线组成的组的第一选择开关。 提供第二选择开关和第三选择开关,用于分别选择组的位线和列线。 第二选择开关和第三选择开关可以布置为布局容许,并且如果这些第二和第三选择开关由与存储器单元相似的MIS晶体管形成,则与存储单元共同的方向可以是通道方向 有助于改善电路集成度。 构成存储单元的MIS晶体管可以具有这样的结构,其中源区和漏区可以设置在形成在衬底表面上的厚绝缘膜的下方,例如场氧化物膜。