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1. 发明授权

US06583490B2 One time programmable semiconductor nonvolatile memory device and method for production of same 有权
公开(公告)号：US06583490B2
公开(公告)日：2003-06-24
申请号：US09888534
申请日：2001-06-26
申请人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
发明人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
IPC分类号： H01L2900
CPC分类号： G11C17/16 , G11C2213/33 , G11C2213/71 , G11C2213/77 , G11C2213/79 , H01L27/112 , H01L2224/48091 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

2. 发明授权

US06800527B2 One time programmable semiconductor nonvolatile memory device and method for production of same 有权
标题翻译：一次可编程半导体非易失性存储器件及其制造方法
公开(公告)号：US06800527B2
公开(公告)日：2004-10-05
申请号：US10366564
申请日：2003-02-14
申请人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
发明人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
IPC分类号： H01L218236
CPC分类号： G11C17/16 , G11C2213/33 , G11C2213/71 , G11C2213/77 , G11C2213/79 , H01L27/112 , H01L2224/48091 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.
摘要翻译：一种提高氧化硅膜的绝缘破坏的再现性和可靠性的能够降低制造成本的半导体非易失性存储器件及其制造方法，其中以矩阵形式布置的每个存储单元具有绝缘膜破损型保险丝，其包括形成在半导体衬底上的第一导电类型的杂质区，形成在所述半导体衬底上的第一绝缘膜，同时覆盖所述杂质区;形成在所述第一绝缘膜中的开口以到达所述杂质区;以及第一绝缘膜第一导电类型的半导体层，第二绝缘膜和第二导电类型的第二半导体层，其从杂质区侧连续地堆叠在开口中，或者具有包含第一导电性的杂质区的绝缘膜断裂型熔丝键入具有SOI结构的第一半导体层，第一绝缘膜在SOI层上，到达杂质区的开口，以及层叠在开口中的第二绝缘膜和第二导电类型的第二半导体层。

3. 发明授权

US06246086B1 Structure of capacitor for dynamic random access memory and method of manufacturing thereof 失效
标题翻译：用于动态随机存取存储器的电容器的结构及其制造方法
公开(公告)号：US06246086B1
公开(公告)日：2001-06-12
申请号：US09138624
申请日：1998-08-24
申请人： Michitaka Kubota
发明人： Michitaka Kubota
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91 , Y10S148/014
摘要： A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.
摘要翻译：电容器的下电极由同轴地设置在圆筒形导电膜内的圆柱形导电膜和柱状导电膜形成。因此，在该电容器中，即使下部电极的平面面积小到无法实现双圆筒型，与下部电极为单一的结构相比，下部电极和上部电极的相对面积较大圆柱型。本发明提出了这种电容器及其制造方法。结果，如果电容器的平面面积相同，则可以增加蓄电容量，并且如果蓄电容量相同，则可以进一步使电容器小型化。

4. 发明授权

US06705516B1 Product management apparatus and product with historical information recording device 失效
标题翻译：产品管理装置及产品具有历史信息记录装置
公开(公告)号：US06705516B1
公开(公告)日：2004-03-16
申请号：US09299835
申请日：1999-04-26
申请人： Michitaka Kubota
发明人： Michitaka Kubota
IPC分类号： G06F1700
CPC分类号： G07C3/00
摘要： A historical information recording device provided in a product for storing in a recorder product historical information relating to the product's manufacture, physical distribution, sale, registration, repair, and disposal and transmitting the information in response to information input from the outside, having a plurality of transmission modes and provided with a mode switcher for selecting a first transmission mode at the time of usual use and switching the transmission mode in response to an input signal to a second transmission mode with at least an output, frequency, method of modulation, or transmission time different from that of the first transmission mode, a historical information tamper prevention unit for prohibiting a write operation in the storage unit under predetermined conditions to prevent tampering of the product historical information, and a discriminator for discriminating if the recorder is the specific historical information recorder which should be covered by the recording and/or reproduction.
摘要翻译：一种历史信息记录装置，用于在记录器中存储与产品的制造，物理分配，销售，注册，修理和处理有关的历史信息，以及响应于从外部输入的信息发送信息的产品，具有多个的传输模式，并且具有用于在通常使用时选择第一传输模式的模式切换器，并且响应于至少输出，频率，调制方法的输入信号切换到第二传输模式来切换传输模式传输时间不同于第一传输模式的传输时间;历史信息篡改防止单元，用于在预定条件下禁止在存储单元中的写入操作，以防止篡改产品历史信息;以及鉴别器，用于鉴别记录器是否为特定历史信息记录器应由t 他录制和/或复制。

5. 发明授权

US06445026B1 Semiconductor device having a memory cell with a plurality of active elements and at least one passive element 有权
标题翻译：具有具有多个有源元件和至少一个无源元件的存储单元的半导体器件
公开(公告)号：US06445026B1
公开(公告)日：2002-09-03
申请号：US09626073
申请日：2000-07-26
申请人： Michitaka Kubota , Toshio Kobayashi
发明人： Michitaka Kubota , Toshio Kobayashi
IPC分类号： H01L27108
CPC分类号： G11C11/403 , G11C11/405 , H01L27/108
摘要： A semiconductor device capable of reducing a cell area without affecting the accuracy, capable of reducing the number of interconnection layers, and capable of realizing a hybrid circuit of a memory cell and peripheral circuit easily and at a low cost, including a bit line, a word line, control gate line, a capacitor with a first electrode connected to the word line, a read transistor comprising an NMOS connected between the bit line and a predetermined potential point and with a gate electrode connected to a second electrode of a capacitor, and a write transistor comprising an NMOS connected between the bit line and the second electrode of the capacitor and with a gate electrode connected to the control gate line.
摘要翻译：一种半导体器件，其能够在不影响精度的情况下降低单元面积，能够减少互连层的数量，能够容易且成本低廉地实现存储单元和外围电路的混合电路，包括位线，字线，控制栅极线，具有连接到字线的第一电极的电容器，读取晶体管，包括连接在位线和预定电位点之间的NMOS，并且连接到电容器的第二电极的栅电极，以及写晶体管，其包括连接在电容器的位线和第二电极之间的NMOS，以及连接到控制栅极线的栅电极。

6. 发明授权

US6094639A History information recording apparatus and product equipment provided with the same 有权
标题翻译：历史信息记录设备及其提供的产品设备
公开(公告)号：US6094639A
公开(公告)日：2000-07-25
申请号：US132546
申请日：1998-08-11
申请人： Michitaka Kubota
发明人： Michitaka Kubota
IPC分类号： G06Q10/08 , G06Q30/02 , G06F17/00
CPC分类号： G06Q30/02 , G06Q10/087
摘要： A history information recording apparatus for recording history information about product equipment integrally therewith and the product equipment having this history information recording apparatus are provided. The history information recording apparatus comprises a first storage means for storing primary history information, a second storage means for storing secondary history information, an input module in which the primary history information and/or the second history information is inputted to be stored in the first storage means and/or the second storage means respectively, and a read module for reading the primary history information from the first storage means and the secondary history information from the second storage means. The first and second storage means, the input module, and the read module are arranged in the product information.
摘要翻译：提供了一种用于记录与其一体的产品设备的历史信息和具有该履历信息记录装置的产品设备的历史信息记录装置。历史信息记录装置包括用于存储主历史信息的第一存储装置，用于存储二次历史信息的第二存储装置，其中输入主历史信息和/或第二历史信息的输入模块以被存储在第一存储装置和/或第二存储装置，以及用于从第一存储装置读取主历史信息和来自第二存储装置的次历史信息的读取模块。第一和第二存储装置，输入模块和读取模块被布置在产品信息中。

7. 发明授权

US5869382A Structure of capacitor for dynamic random access memory and method of manufacturing thereof 失效
标题翻译：用于动态随机存取存储器的电容器的结构及其制造方法
公开(公告)号：US5869382A
公开(公告)日：1999-02-09
申请号：US883362
申请日：1997-06-26
申请人： Michitaka Kubota
发明人： Michitaka Kubota
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91 , Y10S148/014
摘要： A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.
摘要翻译：电容器的下电极由同轴地设置在圆筒形导电膜内的圆柱形导电膜和柱状导电膜形成。因此，在该电容器中，即使下部电极的平面面积小到无法实现双圆筒型，与下部电极为单一的结构相比，下部电极和上部电极的相对面积较大圆柱型。本发明提出了这种电容器及其制造方法。结果，如果电容器的平面面积相同，则可以增加蓄电容量，并且如果蓄电容量相同，则可以进一步使电容器小型化。

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