会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Driving circuit active matrix type organic light emitting diode device and method thereof
    • 驱动电路有源矩阵型有机发光二极管装置及其方法
    • US07545354B2
    • 2009-06-09
    • US11172479
    • 2005-06-30
    • Yong-Min HaJae-Ho Sim
    • Yong-Min HaJae-Ho Sim
    • G09G3/32
    • G09G3/3233G09G2300/0417G09G2300/043G09G2300/0819G09G2300/0842G09G2300/0861G09G2310/0262G09G2320/0242
    • Disclosed are a driving circuit and driving method for an organic light emitting diode (OLED) device. The driving circuit for the OLED device comprises RGB pixels each including: a gate line arranged in a first direction and a data line and a power supply line arranged in a second direction crossing the first direction; a plurality of switching transistors connected to the region where the gate line and the data line intersect; a capacitor connected to the switching transistors and the power supply line; a driving transistor connected to the capacitor and the power supply line; an OLED connected to the driving thin film transistor; a variable voltage signal connected to one of the plurality of switching transistors; and a driving signal connected to at least one of the switching transistors, wherein the variable voltage signal is independently connected to the RGB pixels, and the transistors are thin film transistors.
    • 公开了一种用于有机发光二极管(OLED)器件的驱动电路和驱动方法。 用于OLED器件的驱动电路包括RGB像素,每个像素包括:沿第一方向布置的栅极线和沿与第一方向交叉的第二方向布置的数据线和电源线; 连接到栅极线和数据线相交的区域的多个开关晶体管; 连接到开关晶体管和电源线的电容器; 连接到电容器和电源线的驱动晶体管; 连接到驱动薄膜晶体管的OLED; 连接到所述多个开关晶体管中的一个的可变电压信号; 以及连接到所述开关晶体管中的至少一个的驱动信号,其中所述可变电压信号独立地连接到所述RGB像素,并且所述晶体管是薄膜晶体管。
    • 4. 发明授权
    • Thin film transistor and method of fabricating thereof
    • 薄膜晶体管及其制造方法
    • US06429485B1
    • 2002-08-06
    • US09192050
    • 1998-11-13
    • Yong-Min HaJae-Deok Park
    • Yong-Min HaJae-Deok Park
    • H01L2701
    • H01L27/1237H01L27/1214H01L27/127H01L29/78621
    • A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.
    • 薄膜晶体管(TFT)具有轻掺杂漏极,其包括重掺杂区域和轻掺杂区域。 轻掺杂漏极通过具有不同厚度的栅极绝缘层的单一掺杂工艺同时形成。 通过在绝缘基板上形成有源层,在有源层上形成绝缘层,在绝缘层上形成导电层,在导电层上形成光致抗蚀剂图案,通过过蚀刻导电 通过使用光致抗蚀剂图案作为掩模。 然后通过使用光致抗蚀剂图案作为掩模来部分蚀刻第一绝缘层。 结果,与光致抗蚀剂图案重叠的第一绝缘层的部分比不与光致抗蚀剂图案重叠的其它部分厚。 当整个TFT被诱导到杂质时,大部分在较厚的绝缘区下面的有源区形成轻掺杂的漏极。
    • 5. 发明授权
    • TET-LCD method for manufacturing the same
    • TET-LCD制造方法
    • US6025216A
    • 2000-02-15
    • US105044
    • 1998-06-26
    • Yong-Min Ha
    • Yong-Min Ha
    • G02F1/136G02F1/1362G02F1/1368H01L21/77H01L21/84H01L27/12H01L29/04
    • G02F1/1368G02F1/136227H01L27/1214
    • A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.
    • 一种用于液晶显示器的薄膜晶体管包括:基板; 有源层,其在该衬底上具有源区和漏区; 与所述有源层相邻并具有第一和第二表面的第一绝缘层,所述第一表面在与所述第二表面相反的一侧上,所述有源层与所述第一绝缘层的第二表面相邻; 与第一绝缘层的第一表面相邻的栅电极; 与所述源极区域接触的第一电极; 与漏区接触的第二电极; 在第二电极上的第二绝缘层; 以及在所述基板的所得结构上的第三绝缘层。
    • 7. 发明申请
    • Liquid crystal display device and fabrication method thereof
    • 液晶显示装置及其制造方法
    • US20060273315A1
    • 2006-12-07
    • US11436902
    • 2006-05-19
    • Yong-Min HaHan-Wook Hwang
    • Yong-Min HaHan-Wook Hwang
    • H01L29/04
    • G02F1/134363G02F1/133707
    • An LCD device, and a fabrication method thereof, having a high aperture ratio and a high optical transmittance that enhances a fabrication yield and reduces the number of masks required in a fabrication process are disclosed. The LCD device includes a first substrate and a second substrate; a gate line arranged on the first substrate in one direction and having a transparent conductive layer formed of a transparent conductive material at a lower portion thereof; a data line; a thin film transistor; a first electrode formed on the first substrate and formed on the same layer as the transparent conductive layer; a second electrode having a plurality of slits and formed on a different layer from the first electrode, wherein the second electrode generates a horizontal field with a parabolic shape on the first substrate with the first electrode; and a liquid crystal layer.
    • 公开了具有高开口率和高透光率的LCD器件及其制造方法,其提高了制造成品率并减少了制造工艺中所需的掩模数量。 LCD装置包括第一基板和第二基板; 栅极线,其在一个方向上布置在第一基板上,并且在其下部具有由透明导电材料形成的透明导电层; 数据线 薄膜晶体管; 第一电极,形成在第一基板上并形成在与透明导电层相同的层上; 第二电极,具有多个狭缝并形成在与第一电极不同的层上,其中第二电极在具有第一电极的第一基板上产生具有抛物线形状的水平场; 和液晶层。
    • 9. 发明授权
    • Thin film transistor, liquid crystal display and fabricating methods thereof
    • 薄膜晶体管,液晶显示器及其制造方法
    • US06204520B1
    • 2001-03-20
    • US09123831
    • 1998-07-28
    • Yong-Min HaJoo-Cheon Yeo
    • Yong-Min HaJoo-Cheon Yeo
    • H01L2912
    • H01L29/78621G02F1/13454G02F1/136227H01L27/124H01L27/1255H01L29/78636
    • The present invention relates to a thin film transistor (TFT), liquid crystal display (LCD) and fabricating methods thereof, and more particularly to a TFT having source/drain lines on which an insulating layer and an active layer are located lie on an insulated substrate, to an LCD using the TFT and fabricating methods of the TFT and LCD. The TFT has a BBC (Buried Bus Coplanar) structure by forming a source/drain line on a substrate and by forming a buffer layer which covers the source/drain line which simplifies the process by means of reducing the number of deposition steps. The BBC structure of TFT has a source/drain line on a substrate, an insulating layer covering the source/drain line and the entire disclosed surface and a coplanar structure on the insulating layer. The present invention also provides a data line in the TFT of the BBC structure having low resistance applicable to a wide-screen by means of forming both the buffer layer and the source/drain line with a sufficient thickness.
    • 薄膜晶体管(TFT),液晶显示器(LCD)及其制造方法技术领域本发明涉及薄膜晶体管(TFT),液晶显示器(LCD)及其制造方法,更具体地说,涉及具有绝缘层和有源层的源/漏线的TFT位于绝缘 基板,使用TFT的LCD和TFT和LCD的制造方法。 TFT通过在衬底上形成源极/漏极线并且形成覆盖源极/漏极线的缓冲层,通过减少沉积步骤的次数来简化工艺,从而具有BBC(埋入式总线共面)结构。 TFT的BBC结构在衬底上具有源极/漏极线,覆盖源极/漏极线的绝缘层和整个公开的表面以及绝缘层上的共面结构。 本发明还提供了一种通过形成具有足够厚度的缓冲层和源极/漏极线两者,适用于宽屏幕的具有低电阻的BBC结构的TFT中的数据线。
    • 10. 发明授权
    • Method of fabricating thin film transistors
    • 制造薄膜晶体管的方法
    • US6077730A
    • 2000-06-20
    • US22415
    • 1998-02-12
    • Sang-Gul LeeJu-Cheon YeoYong-Min Ha
    • Sang-Gul LeeJu-Cheon YeoYong-Min Ha
    • H01L29/786H01L21/336H01L21/84
    • H01L27/127H01L29/78621
    • A method is provided for fabricating a thin film transistor on a substrate. The method includes the steps of forming an active layer having a channel region on the substrate, forming an impurity-blocking mask covering the channel region and portions of the active layer outside the channel region adjacent the channel region, and doping impurities of a first conductivity type at a high density into portions of the active layer uncovered by the impurity-blocking mask to form impurity-doped regions in the active layer. The method further includes the steps of removing the impurity-blocking mask and thereafter performing a plasma treatment on the resultant structure using a plasma gas containing impurities of the first conductivity type to form LDD regions in the active layer between the channel region and the impurity-doped regions.
    • 提供了一种在衬底上制造薄膜晶体管的方法。 该方法包括以下步骤:在衬底上形成具有沟道区的有源层,形成覆盖沟道区的杂质阻挡掩模和与沟道区相邻的沟道区之外的有源层的部分,以及掺杂第一导电性的杂质 以高密度键入由杂质阻挡掩模未覆盖的有源层的部分,以在有源层中形成杂质掺杂区域。 该方法还包括以下步骤:去除杂质阻挡掩模,然后使用含有第一导电类型的杂质的等离子气体对所得结构进行等离子体处理,以在沟道区和杂质阻挡掩模之间的有源层中形成LDD区, 掺杂区域。