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1. 发明授权

US6077730A Method of fabricating thin film transistors 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US6077730A
公开(公告)日：2000-06-20
申请号：US22415
申请日：1998-02-12
申请人： Sang-Gul Lee , Ju-Cheon Yeo , Yong-Min Ha
发明人： Sang-Gul Lee , Ju-Cheon Yeo , Yong-Min Ha
IPC分类号： H01L29/786 , H01L21/336 , H01L21/84
CPC分类号： H01L27/127 , H01L29/78621
摘要： A method is provided for fabricating a thin film transistor on a substrate. The method includes the steps of forming an active layer having a channel region on the substrate, forming an impurity-blocking mask covering the channel region and portions of the active layer outside the channel region adjacent the channel region, and doping impurities of a first conductivity type at a high density into portions of the active layer uncovered by the impurity-blocking mask to form impurity-doped regions in the active layer. The method further includes the steps of removing the impurity-blocking mask and thereafter performing a plasma treatment on the resultant structure using a plasma gas containing impurities of the first conductivity type to form LDD regions in the active layer between the channel region and the impurity-doped regions.
摘要翻译：提供了一种在衬底上制造薄膜晶体管的方法。该方法包括以下步骤：在衬底上形成具有沟道区的有源层，形成覆盖沟道区的杂质阻挡掩模和与沟道区相邻的沟道区之外的有源层的部分，以及掺杂第一导电性的杂质以高密度键入由杂质阻挡掩模未覆盖的有源层的部分，以在有源层中形成杂质掺杂区域。该方法还包括以下步骤：去除杂质阻挡掩模，然后使用含有第一导电类型的杂质的等离子气体对所得结构进行等离子体处理，以在沟道区和杂质阻挡掩模之间的有源层中形成LDD区，掺杂区域。

2. 发明授权

US06534788B1 Thin film transistor having dual gate structure and a fabricating method thereof 有权
标题翻译：具有双栅极结构的薄膜晶体管及其制造方法
公开(公告)号：US06534788B1
公开(公告)日：2003-03-18
申请号：US09364823
申请日：1999-07-30
申请人： Ju-Cheon Yeo , Hong-Seok Choi , Yong-Min Ha , Sang-Gul Lee
发明人： Ju-Cheon Yeo , Hong-Seok Choi , Yong-Min Ha , Sang-Gul Lee
IPC分类号： H01L2912
CPC分类号： H01L29/6675 , H01L29/41733 , H01L29/78621 , H01L29/78645 , H01L29/78648
摘要： The present invention relates to a thin film transistor and a fabricating method thereof, wherein the source and drain wires are located on a substrate and a double gate structure is provided, whereby the driving capacity of on-current is improved and the degradation of a device is reduced. The TFT includes a substrate, a source electrode, a drain electrode and a lower gate electrode on the substrate, a buffer layer covering an exposed surface of the substrate as well as the source, drain and lower gate electrodes. An active layer is formed on the buffer layer, wherein a source region, a drain region, lightly-doped (LD) regions and a channel region are formed in the active layer. A gate insulating layer is formed on the channel and LD regions. An upper gate electrode is then formed on the gate insulating layer over the channel region. A passivation layer then covers the upper gate electrode. A plurality of contact holes are formed in the buffer and passivation layers, wherein the contact holes expose the source and drain electrodes and the source and drain regions. A first interconnection wire connects the source electrode to the source region. A second interconnection wire connects the drain electrode to the drain region.
摘要翻译：薄膜晶体管及其制造方法技术领域本发明涉及一种薄膜晶体管及其制造方法，其中源极和漏极布线位于基板上，并且提供双栅极结构，由此提高了导通电流的驱动能力和器件的劣化降低了。 TFT包括衬底，源电极，漏电极和下栅电极，覆盖衬底的暴露表面的缓冲层以及源极，漏极和下栅电极。在缓冲层上形成有源层，其中在有源层中形成源极区，漏极区，轻掺杂（LD）区和沟道区。在沟道和LD区域上形成栅极绝缘层。然后在沟道区上的栅绝缘层上形成上栅电极。然后钝化层覆盖上栅电极。在缓冲层和钝化层中形成多个接触孔，其中接触孔暴露出源极和漏极以及源极和漏极区。第一互连线将源电极连接到源极区域。第二互连线将漏极连接到漏极区。

3. 发明授权

US07545354B2 Driving circuit active matrix type organic light emitting diode device and method thereof 有权
标题翻译：驱动电路有源矩阵型有机发光二极管装置及其方法
公开(公告)号：US07545354B2
公开(公告)日：2009-06-09
申请号：US11172479
申请日：2005-06-30
申请人： Yong-Min Ha , Jae-Ho Sim
发明人： Yong-Min Ha , Jae-Ho Sim
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/0242
摘要： Disclosed are a driving circuit and driving method for an organic light emitting diode (OLED) device. The driving circuit for the OLED device comprises RGB pixels each including: a gate line arranged in a first direction and a data line and a power supply line arranged in a second direction crossing the first direction; a plurality of switching transistors connected to the region where the gate line and the data line intersect; a capacitor connected to the switching transistors and the power supply line; a driving transistor connected to the capacitor and the power supply line; an OLED connected to the driving thin film transistor; a variable voltage signal connected to one of the plurality of switching transistors; and a driving signal connected to at least one of the switching transistors, wherein the variable voltage signal is independently connected to the RGB pixels, and the transistors are thin film transistors.
摘要翻译：公开了一种用于有机发光二极管（OLED）器件的驱动电路和驱动方法。用于OLED器件的驱动电路包括RGB像素，每个像素包括：沿第一方向布置的栅极线和沿与第一方向交叉的第二方向布置的数据线和电源线; 连接到栅极线和数据线相交的区域的多个开关晶体管; 连接到开关晶体管和电源线的电容器; 连接到电容器和电源线的驱动晶体管; 连接到驱动薄膜晶体管的OLED; 连接到所述多个开关晶体管中的一个的可变电压信号; 以及连接到所述开关晶体管中的至少一个的驱动信号，其中所述可变电压信号独立地连接到所述RGB像素，并且所述晶体管是薄膜晶体管。

4. 发明授权

US07057675B2 Liquid crystal display device and the fabricating method thereof comprising pixel electrode completely covering adjacent gate line and adjacent channel region unconnected to the pixel electrode 失效
标题翻译：液晶显示装置及其制造方法包括完全覆盖相邻栅极线和与像素电极未连接的相邻沟道区域的像素电极
公开(公告)号：US07057675B2
公开(公告)日：2006-06-06
申请号：US09961701
申请日：2001-09-25
申请人： Yong-Min Ha
发明人： Yong-Min Ha
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/134336
摘要： An array substrate of a liquid crystal display device includes a substrate, a plurality of gate lines disposed on the substrate, a plurality of data lines disposed perpendicular to the gate lines, a plurality of storage capacitors each having at least a first electrode disposed parallel to a corresponding gate line, a plurality of switching devices each electrically connected with the corresponding gate line and a corresponding data line, and a plurality of pixel electrodes each overlapping a portion of an nth storage capacitor and a portion of a (n−1)th storage capacitor.
摘要翻译：液晶显示装置的阵列基板包括基板，设置在基板上的多个栅极线，与栅极线垂直设置的多个数据线，多个存储电容器，每个存储电容器至少具有与第一电极平行布置的第一电极相应的栅极线，与相应的栅极线和相应的数据线电连接的多个开关器件，以及每个与第n个存储电容器的一部分重叠的多个像素电极和一部分的（n-1）^{存储电容器。}

5. 发明授权

US08378734B2 Method and system for reduction of off-current in field effect transistors 有权
标题翻译：用于减小场效应晶体管中的截止电流的方法和系统
公开(公告)号：US08378734B2
公开(公告)日：2013-02-19
申请号：US10396312
申请日：2003-03-26
申请人： Yong-Min Ha , Kee-Jong Kim , Byeoung-Koo Kim
发明人： Yong-Min Ha , Kee-Jong Kim , Byeoung-Koo Kim
IPC分类号： H03K17/687
CPC分类号： G09G3/3648 , G09G2310/06 , G09G2320/02
摘要： A method for reducing an off-current of a field effect transistor in which two electrodes of the field effect transistor have fixed voltage values and the rest electrode has an alternating voltage value by an AC voltage pulse generator to form an off-stress near source and drain junctions in turn.
摘要翻译：一种用于减小场效应晶体管的截止电流的方法，其中场效应晶体管的两个电极具有固定的电压值，并且其余电极通过AC电压脉冲发生器具有交流电压值，以在源极附近形成不应力，排水路口依次。

6. 发明授权

US06429485B1 Thin film transistor and method of fabricating thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06429485B1
公开(公告)日：2002-08-06
申请号：US09192050
申请日：1998-11-13
申请人： Yong-Min Ha , Jae-Deok Park
发明人： Yong-Min Ha , Jae-Deok Park
IPC分类号： H01L2701
CPC分类号： H01L27/1237 , H01L27/1214 , H01L27/127 , H01L29/78621
摘要： A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.
摘要翻译：薄膜晶体管（TFT）具有轻掺杂漏极，其包括重掺杂区域和轻掺杂区域。轻掺杂漏极通过具有不同厚度的栅极绝缘层的单一掺杂工艺同时形成。通过在绝缘基板上形成有源层，在有源层上形成绝缘层，在绝缘层上形成导电层，在导电层上形成光致抗蚀剂图案，通过过蚀刻导电通过使用光致抗蚀剂图案作为掩模。然后通过使用光致抗蚀剂图案作为掩模来部分蚀刻第一绝缘层。结果，与光致抗蚀剂图案重叠的第一绝缘层的部分比不与光致抗蚀剂图案重叠的其它部分厚。当整个TFT被诱导到杂质时，大部分在较厚的绝缘区下面的有源区形成轻掺杂的漏极。

7. 发明授权

US6025216A TET-LCD method for manufacturing the same 失效
标题翻译： TET-LCD制造方法
公开(公告)号：US6025216A
公开(公告)日：2000-02-15
申请号：US105044
申请日：1998-06-26
申请人： Yong-Min Ha
发明人： Yong-Min Ha
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： G02F1/1368 , G02F1/136227 , H01L27/1214
摘要： A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.
摘要翻译：一种用于液晶显示器的薄膜晶体管包括：基板; 有源层，其在该衬底上具有源区和漏区; 与所述有源层相邻并具有第一和第二表面的第一绝缘层，所述第一表面在与所述第二表面相反的一侧上，所述有源层与所述第一绝缘层的第二表面相邻; 与第一绝缘层的第一表面相邻的栅电极; 与所述源极区域接触的第一电极; 与漏区接触的第二电极; 在第二电极上的第二绝缘层; 以及在所述基板的所得结构上的第三绝缘层。

8. 发明授权

US5811836A Thin film transistor having protective layer for pixel electrode 失效
标题翻译：具有像素电极保护层的薄膜晶体管
公开(公告)号：US5811836A
公开(公告)日：1998-09-22
申请号：US704345
申请日：1996-08-28
申请人： Yong-Min Ha
发明人： Yong-Min Ha
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/00
CPC分类号： G02F1/1368 , G02F1/136227 , H01L27/1214
摘要： A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.
摘要翻译：一种用于液晶显示器的薄膜晶体管包括：基板; 有源层，其在该衬底上具有源区和漏区; 与所述有源层相邻并具有第一和第二表面的第一绝缘层，所述第一表面在与所述第二表面相反的一侧上，所述有源层与所述第一绝缘层的第二表面相邻; 与第一绝缘层的第一表面相邻的栅电极; 与所述源极区域接触的第一电极; 与漏区接触的第二电极; 在所述第二电极上的第二绝缘层; 以及在所述基板的所得结构上的第三绝缘层。

9. 发明申请

US20060273315A1 Liquid crystal display device and fabrication method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20060273315A1
公开(公告)日：2006-12-07
申请号：US11436902
申请日：2006-05-19
申请人： Yong-Min Ha , Han-Wook Hwang
发明人： Yong-Min Ha , Han-Wook Hwang
IPC分类号： H01L29/04
CPC分类号： G02F1/134363 , G02F1/133707
摘要： An LCD device, and a fabrication method thereof, having a high aperture ratio and a high optical transmittance that enhances a fabrication yield and reduces the number of masks required in a fabrication process are disclosed. The LCD device includes a first substrate and a second substrate; a gate line arranged on the first substrate in one direction and having a transparent conductive layer formed of a transparent conductive material at a lower portion thereof; a data line; a thin film transistor; a first electrode formed on the first substrate and formed on the same layer as the transparent conductive layer; a second electrode having a plurality of slits and formed on a different layer from the first electrode, wherein the second electrode generates a horizontal field with a parabolic shape on the first substrate with the first electrode; and a liquid crystal layer.
摘要翻译：公开了具有高开口率和高透光率的LCD器件及其制造方法，其提高了制造成品率并减少了制造工艺中所需的掩模数量。 LCD装置包括第一基板和第二基板; 栅极线，其在一个方向上布置在第一基板上，并且在其下部具有由透明导电材料形成的透明导电层; 数据线薄膜晶体管; 第一电极，形成在第一基板上并形成在与透明导电层相同的层上; 第二电极，具有多个狭缝并形成在与第一电极不同的层上，其中第二电极在具有第一电极的第一基板上产生具有抛物线形状的水平场; 和液晶层。

10. 发明申请

US20060043366A1 Driving circuit active matrix type organic light emitting diode device and method thereof 有权
公开(公告)号：US20060043366A1
公开(公告)日：2006-03-02
申请号：US11172479
申请日：2005-06-30
申请人： Yong-Min Ha , Jae-Ho Sim
发明人： Yong-Min Ha , Jae-Ho Sim
IPC分类号： H01L29/04
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/0242
摘要： Disclosed are a driving circuit and driving method for an organic light emitting diode (OLED) device. The driving circuit for the OLED device comprises RGB pixels each including: a gate line arranged in a first direction and a data line and a power supply line arranged in a second direction crossing the first direction; a plurality of switching transistors connected to the region where the gate line and the data line intersect; a capacitor connected to the switching transistors and the power supply line; a driving transistor connected to the capacitor and the power supply line; an OLED connected to the driving thin film transistor; a variable voltage signal connected to one of the plurality of switching transistors; and a driving signal connected to at least one of the switching transistors, wherein the variable voltage signal is independently connected to the RGB pixels, and the transistors are thin film transistors.

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