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    • 3. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US5376213A
    • 1994-12-27
    • US104475
    • 1993-07-28
    • Yoichi UedaMitsuaki KominoKoichi Kazama
    • Yoichi UedaMitsuaki KominoKoichi Kazama
    • C23C16/458C23C16/46C23F1/02
    • H01L21/67126C23C16/4586C23C16/46C23C16/463H01L21/68785
    • A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.
    • 等离子体蚀刻装置包括设置在铝制处理室中的晶片安装座。 晶片支架包括铝制基座,加热器固定框架和冷却块,并且陶瓷加热器附接到加热器固定框架。 在冷却块中形成有容纳液氮的孔。 冷却块的冷却被传送到基座上的晶片,以在其被蚀刻时使其冷却。 陶瓷加热器调节冷却晶片的温度。 液氮在冷却块的孔中循环,穿过由连接处理室的底部和冷却块的一对联接装置限定的冷却剂通道。 每个联合装置包括固定到冷却块的上部导电连接器,固定到室底部的下部导电连接器,以及用于将两个连接器彼此连接的电绝缘环和热绝缘环,同时保持它们的电气和 绝热。
    • 4. 发明授权
    • Radio equipment
    • 无线电设备
    • US5708684A
    • 1998-01-13
    • US513230
    • 1995-08-10
    • Yoichi Ueda
    • Yoichi Ueda
    • H04L7/00
    • H04L7/0083
    • A high-frequency signal output from an active radio transmitter is input to a phase comparator via a standby radio receiver. A transmitting data processing unit delays a frame data signal and a clock signal by a predetermined time and inputs them to the phase comparator. The phase comparator compares the phases of the two frame data signals and the two clock signals, and the delay time adjuster in the active radio transmitter adjusts the phases of the frame data signal and the clock signal input from the data processing unit so that the phases of both data signals and clock signals are coincident with each other. Similarly, the delay time adjuster in the standby radio transmitter adjusts the phases of the data signal and the clock signal input from the data processing unit. In this manner, the delay times (signal phases) of the active radio transmitter and the standby radio transmitter are automatically adjusted during the operation of a radio equipment.
    • 从有源无线电发射机输出的高频信号通过备用无线电接收机输入到相位比较器。 发送数据处理单元将帧数据信号和时钟信号延迟预定时间并将其输入到相位比较器。 相位比较器比较两个帧数据信号和两个时钟信号的相位,并且有源无线电发射机中的延迟时间调节器调整帧数据信号和从数据处理单元输入的时钟信号的相位,使得相位 两个数据信号和时钟信号彼此重合。 类似地,备用无线电发射机中的延迟时间调节器调节数据信号的相位和从数据处理单元输入的时钟信号。 以这种方式,在无线电设备的操作期间,自动调整有源无线电发射机和备用无线电发射机的延迟时间(信号相位)。
    • 6. 发明授权
    • Method of controlling temperature of susceptor
    • 感受器温度控制方法
    • US5567267A
    • 1996-10-22
    • US154451
    • 1993-11-19
    • Kouichi KazamaMitsuaki KominoKenji IshikawaYoichi Ueda
    • Kouichi KazamaMitsuaki KominoKenji IshikawaYoichi Ueda
    • H01J37/32C23F1/02
    • H01J37/32H01J2237/2001
    • A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of controlling the temperature of the susceptor includes an initialization mode, an idle mode following the initialization mode, process and maintenance modes selectively following the idle mode. The initialization mode includes the steps of filling the boundary clearance with a heat transfer gas and observing a change in temperature of the susceptor caused by cold transferred from the cooling block. The idle mode is executed after the temperature of the susceptor reaches a predetermined temperature. The idle mode includes the step of exhausting the boundary clearance to set it in a vacuum state to sever the heat transfer path. The process mode includes the steps of filling the boundary clearance with the heat transfer gas and processing a semiconductor wafer on the susceptor. The maintenance mode includes the steps of keeping the vacuum state of the boundary clearance to sever the heat transfer path and performing maintenance.
    • 等离子体蚀刻装置的基座设置在加热器的加热器固定框架上。 固定框架设置在含有液氮的冷却块上。 在固定框架和冷却块之间以及传热路径上形成边界间隙。 控制基座的温度的方法包括初始化模式,初始化模式之后的空闲模式,选择性地跟随空闲模式的处理和维护模式。 初始化模式包括用传热气体填充边界间隙并观察由冷却块传递的冷引起的基座的温度变化的步骤。 在基座的温度达到预定温度之后执行空闲模式。 空闲模式包括排出边界间隙以将其设置在真空状态以切断传热路径的步骤。 工艺模式包括以下步骤:用传热气体填充边界间隙并处理基座上的半导体晶片。 维护模式包括保持边界空隙的真空状态以切断传热路径并执行维护的步骤。