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1. 发明授权

US5665166A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5665166A
公开(公告)日：1997-09-09
申请号：US735489
申请日：1996-10-23
申请人： Youichi Deguchi , Satoru Kawakami , Yoichi Ueda , Mitsuaki Komino
发明人： Youichi Deguchi , Satoru Kawakami , Yoichi Ueda , Mitsuaki Komino
IPC分类号： C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/5096 , H01J37/32174 , H01J37/32935
摘要： Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.
摘要翻译：公开了一种等离子体处理装置，包括：第一电极，待处理物体将要设置在其上;第二电极，被布置为面对第一电极;高频电源，用于在第一和第二电极之间提供高频电力用于将等离子体形成到第一和第二电极之间的区域的处理气体供给机构，以及用于检测第一电极的偏置电位的偏置电位检测机构。偏置检测机构具有位于待处理对象附近的检测端子。

2. 发明授权

US5478429A Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5478429A
公开(公告)日：1995-12-26
申请号：US183406
申请日：1994-01-19
申请人： Mitsuaki Komino , Yoichi Ueda , Youichi Deguchi , Satoru Kawakami
发明人： Mitsuaki Komino , Yoichi Ueda , Youichi Deguchi , Satoru Kawakami
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32045 , H01J37/321
摘要： The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for supplying a process gas, a lower electrode located in the process chamber, having a cooling means, and opposing the upper electrode, for supporting an object, and RF power supplying means electrically connected to the lower electrode, protruding from the process chamber and connected to a RF power supply, for supplying RF power between the upper and lower electrodes, wherein the RF power supplying means includes, an outer conductive pipe surrounding the inner conductive rod and spaced therefrom, and a fixing member inserted between the inner conductive rod and the outer conductive pipe and having concaves and convexes, the inner conductive rod and the outer conductive pipe being electrically connected to an RF power supply source.
摘要翻译：本发明提供了一种等离子体处理装置，其中将RF功率施加到处理气体，从而将气体转化成等离子体以处理物体，该装置具有处理室，位于处理室中的上电极，用于提供处理气体的供应部分，位于处理室中的下电极，具有冷却装置，并与上电极相对，用于支撑物体;以及RF电源装置，电连接到下电极，从处理室突出并且连接到RF电源，用于在上下电极之间提供RF功率，其中RF供电装置包括：围绕内导电棒并与之间隔开的外导电管，以及插入在内导电棒之间的固定件和外导电管，并且具有凹凸，内导电棒和外导电管电连接连接到RF电源。

3. 发明授权

US5376213A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5376213A
公开(公告)日：1994-12-27
申请号：US104475
申请日：1993-07-28
申请人： Yoichi Ueda , Mitsuaki Komino , Koichi Kazama
发明人： Yoichi Ueda , Mitsuaki Komino , Koichi Kazama
IPC分类号： C23C16/458 , C23C16/46 , C23F1/02
CPC分类号： H01L21/67126 , C23C16/4586 , C23C16/46 , C23C16/463 , H01L21/68785
摘要： A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.
摘要翻译：等离子体蚀刻装置包括设置在铝制处理室中的晶片安装座。晶片支架包括铝制基座，加热器固定框架和冷却块，并且陶瓷加热器附接到加热器固定框架。在冷却块中形成有容纳液氮的孔。冷却块的冷却被传送到基座上的晶片，以在其被蚀刻时使其冷却。陶瓷加热器调节冷却晶片的温度。液氮在冷却块的孔中循环，穿过由连接处理室的底部和冷却块的一对联接装置限定的冷却剂通道。每个联合装置包括固定到冷却块的上部导电连接器，固定到室底部的下部导电连接器，以及用于将两个连接器彼此连接的电绝缘环和热绝缘环，同时保持它们的电气和绝热。

4. 发明授权

US5567267A Method of controlling temperature of susceptor 失效
标题翻译：感受器温度控制方法
公开(公告)号：US5567267A
公开(公告)日：1996-10-22
申请号：US154451
申请日：1993-11-19
申请人： Kouichi Kazama , Mitsuaki Komino , Kenji Ishikawa , Yoichi Ueda
发明人： Kouichi Kazama , Mitsuaki Komino , Kenji Ishikawa , Yoichi Ueda
IPC分类号： H01J37/32 , C23F1/02
CPC分类号： H01J37/32 , H01J2237/2001
摘要： A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of controlling the temperature of the susceptor includes an initialization mode, an idle mode following the initialization mode, process and maintenance modes selectively following the idle mode. The initialization mode includes the steps of filling the boundary clearance with a heat transfer gas and observing a change in temperature of the susceptor caused by cold transferred from the cooling block. The idle mode is executed after the temperature of the susceptor reaches a predetermined temperature. The idle mode includes the step of exhausting the boundary clearance to set it in a vacuum state to sever the heat transfer path. The process mode includes the steps of filling the boundary clearance with the heat transfer gas and processing a semiconductor wafer on the susceptor. The maintenance mode includes the steps of keeping the vacuum state of the boundary clearance to sever the heat transfer path and performing maintenance.
摘要翻译：等离子体蚀刻装置的基座设置在加热器的加热器固定框架上。固定框架设置在含有液氮的冷却块上。在固定框架和冷却块之间以及传热路径上形成边界间隙。控制基座的温度的方法包括初始化模式，初始化模式之后的空闲模式，选择性地跟随空闲模式的处理和维护模式。初始化模式包括用传热气体填充边界间隙并观察由冷却块传递的冷引起的基座的温度变化的步骤。在基座的温度达到预定温度之后执行空闲模式。空闲模式包括排出边界间隙以将其设置在真空状态以切断传热路径的步骤。工艺模式包括以下步骤：用传热气体填充边界间隙并处理基座上的半导体晶片。维护模式包括保持边界空隙的真空状态以切断传热路径并执行维护的步骤。

5. 发明授权

US06634845B1 Transfer module and cluster system for semiconductor manufacturing process 失效
标题翻译：转移模块和集群系统用于半导体制造过程
公开(公告)号：US06634845B1
公开(公告)日：2003-10-21
申请号：US09595930
申请日：2000-06-16
申请人： Mitsuaki Komino
发明人： Mitsuaki Komino
IPC分类号： B65G4905
CPC分类号： H01L21/67161 , B65G49/06 , B65G2249/02 , H01L21/67742 , H01L21/67745 , H01L21/67748
摘要： A number of process chambers connected to a transfer module can be increased after a cluster system provided with the transfer module is initially established. The transfer module transfers an object to be processed between a transfer chamber and at least one process chamber connected to the transfer chamber. A housing of the transfer module defines the transfer chamber, the housing having a substantially rectangular cross section so that a plurality of the housings are connectable to each other. A movable part is provided in the transfer chamber, the movable part being movable along a base surface provided in the housing of the transfer module. A transfer part is provided on the movable part, the transfer part holding the object to be processed and being movable between the transfer chamber and the process chamber. A drive mechanism drives the movable part, and a control unit controls motion of the movable part.
摘要翻译：在设置有传送模块的集群系统最初建立之后，可以增加连接到传送模块的多个处理室。传送模块在传送室和连接到传送室的至少一个处理室之间传送要处理的物体。转移模块的壳体限定传送室，壳体具有基本矩形的横截面，使得多个壳体可彼此连接。可移动部分设置在传送室中，可移动部分可沿设置在传送模块的壳体中的基面移动。传递部分设置在可移动部分上，传送部分保持被处理物体并且可在传送室和处理室之间移动。驱动机构驱动可动部，控制部控制可动部的动作。

6. 发明授权

US06544380B2 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06544380B2
公开(公告)日：2003-04-08
申请号：US10079600
申请日：2002-02-19
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
摘要翻译：一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。该腔室还包括一个可拆卸的挡板，其围绕电极配合。为了开始处理，将基板放置在电极上，并且室被排出或供应气体。然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置房间的开放。这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

7. 发明授权

US06379756B2 Plasma treatment method and apparatus 失效
公开(公告)号：US06379756B2
公开(公告)日：2002-04-30
申请号：US09864022
申请日：2001-05-23
申请人： Mitsuaki Komino
发明人： Mitsuaki Komino
IPC分类号： C23C16509
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

8. 发明申请

US20100200566A1 HEATING APPARATUS 审中-公开
标题翻译：加热装置
公开(公告)号：US20100200566A1
公开(公告)日：2010-08-12
申请号：US12300979
申请日：2007-05-14
申请人： Mitsuaki Komino , Kenji Saito
发明人： Mitsuaki Komino , Kenji Saito
IPC分类号： H05B3/68 , H05B3/06
CPC分类号： C23C16/46 , H01L21/67109
摘要： The present invention is to provide a heating apparatus available to reduce temperature quickly with efficient cooling effects in the case of reducing the temperature of a chamber or the like. A substrate processing apparatus 1 comprises a heating unit 100 in a chamber inner space 23 surrounded by a processing chamber 11 and a cover 12. The heating unit 100 is provided by a planer heating body 113 between an outer shell 111 and an inner shell 112. The heating unit generates heat when electricity is carried to the planar heat generating body 113, and heats the chamber inner space 23 to a desired temperature. At a boundary section of the outer shell 111 and the planar shaped heating body 113 of the heating unit 100, a cooling medium flow path 114 is spirally arranged along the circumference surface of the heating unit 100. At the time of reducing temperature, the cooling medium is permitted to flow in the cooling medium flow path 114 to forcibly cool the chamber inner space 23 and the substrate processing apparatus 1, and the temperature is rapidly reduced.
摘要翻译：本发明提供一种可以在降低室等的温度的情况下快速降低温度的加热装置和有效的冷却效果。基板处理装置1包括由处理室11和盖12包围的室内空间23中的加热单元100.加热单元100由外壳111和内壳112之间的平面加热体113设置。当电被传送到平面发热体113时，加热单元产生热量，并将室内空间23加热到期望的温度。在加热单元100的外壳111和平面状加热体113的边界部分，沿着加热单元100的圆周表面螺旋地设置冷却介质流路114.在降温时，冷却允许介质在冷却介质流路114中流动，以强制冷却室内空间23和基板处理装置1，并且迅速降低温度。

9. 发明授权

US6134807A Drying processing method and apparatus using same 失效
标题翻译：干燥处理方法及其使用方法
公开(公告)号：US6134807A
公开(公告)日：2000-10-24
申请号：US79768
申请日：1998-05-15
申请人： Mitsuaki Komino , Osamu Uchisawa
发明人： Mitsuaki Komino , Osamu Uchisawa
IPC分类号： H01L21/304 , H01L21/00 , H01L21/08 , F26B7/00
CPC分类号： H01L21/67034
摘要： A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas heated by the heater 32 and for heating the IPA to produce the dry gas; and a flow control element 36 for supplying a predetermined rate of N.sub.2 gas to the processing chamber 35. Thus, it is possible to improve the efficiency of heat transfer of N.sub.2 gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber 35 after the drying processing is completed.
摘要翻译：一种用于将干燥气体供给到容纳半导体晶片W的处理室35以干燥半导体晶片W的干燥处理设备，该半导体晶片W包括用于加热作为载气的N 2气体的加热器32; 蒸汽发生器34，用于通过使用由加热器32加热的N 2气体使IPA发生雾化，并加热IPA以产生干燥气体; 以及用于向处理室35提供预定速率的N 2气体的流量控制元件36.因此，可以提高N 2气体的传热效率，并且可以增加产生的IPA气体的量并减少产生“近期行动计划”气体的时间。此外，干燥处理完成后，可以防止处理室35内的气氛紊乱。

10. 发明授权

US5769952A Reduced pressure and normal pressure treatment apparatus 失效
标题翻译：减压和常压处理设备
公开(公告)号：US5769952A
公开(公告)日：1998-06-23
申请号：US842833
申请日：1997-04-17
申请人： Mitsuaki Komino
发明人： Mitsuaki Komino
IPC分类号： B65G49/07 , C23C16/44 , C23C16/54 , F16K51/02 , H01L21/00 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67126 , C23C16/4404 , C23C16/54 , F16K51/02 , H01L21/67745 , Y10T137/599
摘要： A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock chamber. The reduced pressure treatment unit comprises a plurality of reduced pressure process treatment chambers connected by means of a gate valve to a reduced pressure transport chamber equipped with a robot arm. The normal pressure treatment unit comprises a plurality of normal pressure process treatment chambers disposed in the vicinity of a robot arm. The load lock chamber is disposed at a position where the transport ranges of the two robot arms overlap. Also, the gate valve opening and closing the transport opening between the load lock and treatment chambers comprises a surface layer portion exposed to the atmosphere within the treatment chamber and a rear base portion whereby the surface layer portion is freely attached and removed with respect to the base portion by, e.g., screws, thus enabling independent replacement of the surface layer portion.
摘要翻译：一种减压处理单元，包括多个处理室，对处理对象（晶片）进行减压处理处理，以及通过负载锁定室连接的对处理对象进行常压处理处理的常压处理单元。减压处理单元包括通过闸阀连接到配备有机器人臂的减压输送室的多个减压处理室。常压处理单元包括设置在机器人手臂附近的多个常压处理室。负载锁定室设置在两个机器人臂的输送范围重叠的位置。此外，打开和关闭装载锁和处理室之间的输送开口的闸阀包括暴露于处理室内的大气的表面层部分和后基部，从而使表面层部分相对于所述表面层部分自由地附接和移除基部分，例如通过螺丝，从而能够独立地更换表面层部分。

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