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1. 发明授权

US5376213A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5376213A
公开(公告)日：1994-12-27
申请号：US104475
申请日：1993-07-28
申请人： Yoichi Ueda , Mitsuaki Komino , Koichi Kazama
发明人： Yoichi Ueda , Mitsuaki Komino , Koichi Kazama
IPC分类号： C23C16/458 , C23C16/46 , C23F1/02
CPC分类号： H01L21/67126 , C23C16/4586 , C23C16/46 , C23C16/463 , H01L21/68785
摘要： A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.
摘要翻译：等离子体蚀刻装置包括设置在铝制处理室中的晶片安装座。晶片支架包括铝制基座，加热器固定框架和冷却块，并且陶瓷加热器附接到加热器固定框架。在冷却块中形成有容纳液氮的孔。冷却块的冷却被传送到基座上的晶片，以在其被蚀刻时使其冷却。陶瓷加热器调节冷却晶片的温度。液氮在冷却块的孔中循环，穿过由连接处理室的底部和冷却块的一对联接装置限定的冷却剂通道。每个联合装置包括固定到冷却块的上部导电连接器，固定到室底部的下部导电连接器，以及用于将两个连接器彼此连接的电绝缘环和热绝缘环，同时保持它们的电气和绝热。

2. 再颁专利

USRE39969E1 Processing system 失效
标题翻译：处理系统
公开(公告)号：USRE39969E1
公开(公告)日：2008-01-01
申请号：US10463435
申请日：1998-04-08
申请人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
发明人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
IPC分类号： H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/3244 , H01J37/32477 , Y10T29/49002 , Y10T29/49117 , Y10T29/532 , Y10T29/53204
摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.
摘要翻译：处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。每个绝缘构件的安装在气体排出孔中的部分从面向基座的上电极的表面突出。

3. 再颁专利

USRE40046E1 Processing system 失效
标题翻译：处理系统
公开(公告)号：USRE40046E1
公开(公告)日：2008-02-12
申请号：US10463439
申请日：1998-04-08
申请人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
发明人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
IPC分类号： B23P19/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/3244 , H01J37/32477 , Y10T29/49002 , Y10T29/49117 , Y10T29/532 , Y10T29/53204
摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.
摘要翻译：处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。每个绝缘构件的安装在气体排出孔中的部分从面向基座的上电极的表面突出。

4. 发明授权

US5677326A Indoline compound and 5-HT.sub.3 receptor antagonist containing the same as active ingredient 失效
标题翻译：二氢吲哚化合物和含有与活性成分相同的5-HT 3受体拮抗剂
公开(公告)号：US5677326A
公开(公告)日：1997-10-14
申请号：US624417
申请日：1996-03-29
申请人： Shinji Tsuchiya , Nobuyuki Yasuda , Atsushi Fukuzaki , Koichi Kazama
发明人： Shinji Tsuchiya , Nobuyuki Yasuda , Atsushi Fukuzaki , Koichi Kazama
IPC分类号： C07D403/06 , A61K31/415
CPC分类号： C07D403/06
摘要： Indoline compounds represented by the general formula: ##STR1## wherein R.sup.1 represents the group ##STR2## R.sup.2 represents a phenyl group which may be substituted or an aromatic heterocyclic group, and R.sup.3 represents hydrogen, a halogen, or a lower alkyl group, hydroxyl group, lower alkoxy group, carbamoyl group or lower alkoxycarbonyl group, and physiologically acceptable salts thereof, and their solvates, as well as 5-HT.sub.3 receptor antagonists containing them as effective components. The indoline compounds of the invention have stronger antagonism against intestinal 5-HT.sub.3 receptors than known 5-HT.sub.3 receptor antagonists and also have excellent sustained action, making them useful as prophylactic or therapeutic agents against vomiting or irritancy induced by chemotherapy or radiation, irritable bowel syndrome, diarrhea, and the like.
摘要翻译： PCT No.PCT / JP94 / 01641 Sec。 371日期：1996年3月29日 102（e）1996年3月29日PCT 1994年9月30日PCT PCT。出版物WO95 / 09168 日期1995年4月6日由通式表示的二氢化合物：其中R 1表示基团R 2表示可被取代的苯基或芳族杂环基，R 3表示氢，卤素或低级烷基，羟基，低级烷氧基，氨基甲酰基或低级烷氧基羰基及其生理学上可接受的盐及其溶剂化物，以及含有它们作为有效成分的5-HT 3受体拮抗剂。本发明的二氢吲哚化合物比已知的5-HT 3受体拮抗剂对肠道5-HT 3受体具有更强的拮抗作用，并且还具有优异的持续作用，使其可用作预防或治疗药物，用于通过化学疗法或辐射引起的呕吐或刺激，肠易激综合征，腹泻等。

5. 发明授权

US06383333B1 Protective member for inner surface of chamber and plasma processing apparatus 失效
标题翻译：室内等离子体处理装置的保护构件
公开(公告)号：US06383333B1
公开(公告)日：2002-05-07
申请号：US09673985
申请日：2000-10-23
申请人： Kazuyoshi Haino , Koichi Kazama
发明人： Kazuyoshi Haino , Koichi Kazama
IPC分类号： C23F102
CPC分类号： H01J37/32477
摘要： An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow protection member for protecting the inner wall of a plasma processing chamber is integrally formed of glass-like carbon materials with a volume resistivity of 1×10−2 &OHgr;·cm or less and a thermal conductivity of 5 W/m·K or more. The protection member preferably has a thickness of 4 mm or more and the average surface roughness (Ra) of the inside of the hollow structure is preferably 2.0 &mgr;m or less. The plasma processing apparatus is configured so that the inner wall protection member having the above characteristics is arranged along the inner wall of the chamber of the plasma processing apparatus, wherein the inner wall of the chamber and the protection member are electrically connected and the chamber is grounded.
摘要翻译：一种用于保护等离子体处理装置室的内壁的内壁保护构件，其通过指定玻璃状碳材料的性质能够长时间稳定地使用，以及具有保护构件的等离子体处理装置。用于保护等离子体处理室的内壁的中空保护构件由体积电阻率为1×10 -2欧姆·厘米或更小，热导率为5W / m·K以上的玻璃状碳材料一体形成。保护构件优选具有4mm以上的厚度，中空结构体的内部的平均表面粗糙度（Ra）优选为2.0μm以下。等离子体处理装置被构造成使得具有上述特性的内壁保护构件沿着等离子体处理装置的室的内壁布置，其中室的内壁和保护构件电连接，并且室是接地

6. 发明授权

US06334983B1 Processing system 有权
标题翻译：处理系统
公开(公告)号：US06334983B1
公开(公告)日：2002-01-01
申请号：US09402393
申请日：1999-10-05
申请人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
发明人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
IPC分类号： B01J1908
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/3244 , H01J37/32477 , Y10T29/49002 , Y10T29/49117 , Y10T29/532 , Y10T29/53204
摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.
摘要翻译：处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。每个绝缘构件的一部分安装在气体排放孔中，从面向基座的上部电极的表面突出。

7. 发明申请

US20080156441A1 PLASMA PROCESSING APPARATUS AND ELECTRODE PLATE, ELECTRODE SUPPORTING BODY, AND SHIELD RING THEREOF 审中-公开
标题翻译：等离子体处理装置和电极板，电极支撑体及其护环
公开(公告)号：US20080156441A1
公开(公告)日：2008-07-03
申请号：US12040523
申请日：2008-02-29
申请人： Masahiro Ogasawara , Kazuya Kato , Toshifumi Nagaiwa , Kosuke Imafuku , Koichi Kazama
发明人： Masahiro Ogasawara , Kazuya Kato , Toshifumi Nagaiwa , Kosuke Imafuku , Koichi Kazama
IPC分类号： H01L21/306
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532 , H01J37/32623 , H01L21/3065
摘要： In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.
摘要翻译：在用于对待处理的基板W进行等离子体处理的等离子体装置1中，与作为下部电极的基座5相对的上部电极21具有电极支撑体22和电极板23。在两个边界处的电极支撑体侧的中心处，确定空腔62的尺寸，使得在提供的高频电力的频率和正交于设置电极板23。此外，围绕电极板23的屏蔽环具有下表面与电极板23处于相同水平面的形状，并且其由不容易被等离子体侵蚀的材料制成。由此，通过等离子体的均匀分布和由于随时间的变化而降低的劣化，处理小特征成为可能。

8. 再颁专利

USRE39939E1 Processing system 失效
标题翻译：处理系统
公开(公告)号：USRE39939E1
公开(公告)日：2007-12-18
申请号：US11055788
申请日：1998-04-08
申请人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
发明人： Nobuyuki Okayama , Hidehito Saegusa , Jun Ozawa , Daisuke Hayashi , Naoki Takayama , Koichi Kazama
IPC分类号： H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/3244 , H01J37/32477 , Y10T29/49002 , Y10T29/49117 , Y10T29/532 , Y10T29/53204
摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.
摘要翻译：处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。每个绝缘构件的一部分安装在气体排放孔中，从面向基座的上部电极的表面突出。

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