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    • 3. 发明申请
    • SPOUT MEMBER AND PACKAGING BAG UTILIZING SAME
    • US20110293202A1
    • 2011-12-01
    • US13061772
    • 2009-09-01
    • Yasuhiro TakedaKenji WashidaTakahiro KoyamaTetsushi MoriYasuharu TakadaMoritoshi OguniHirotaka IkedaToshihiko MoriMatsutarou Ono
    • Yasuhiro TakedaKenji WashidaTakahiro KoyamaTetsushi MoriYasuharu TakadaMoritoshi OguniHirotaka IkedaToshihiko MoriMatsutarou Ono
    • B65D33/06B65D41/32
    • B65D33/1691B65D33/2533B65D75/566B65D75/5883
    • It is aimed to provide a spout member and a packaging bag using the spout member which have excellent handling property and hygiene management performance at the time of supplying water or the like from the outside before and during use such as administration of water and medicine, in which a closure means for freely opening and closing an aperture formed by cutting off parts of peripheral portions of sealed film pieces is protected from a contained content at the time of storage or transportation and which have excellent protecting property even when an inner pressure acts in the packaging bag, excellent contamination preventing property until a spout is opened and excellent contamination preventing property and handling property after opening.In a packaging bag formed by sealing peripheral portions of a plurality of film pieces and including an inlet portion and a spout portion at the peripheral portions, the inlet portion is opened as an inlet port by cutting off parts of the peripheral portions of the sealed film pieces to form an aperture by an unsealed portion, at least two holes are formed at the opposite sides of a part which becomes the inlet port at the peripheral portions near the inlet portion, and the holes serve as a suspension means for enabling the packaging bag to be suspended and a finger holding means. An operable and closable closure means including first and second members engageable with each other is formed by bonding an upper part of a first base member including the first member and an upper part of a second base member including the second member respectively to inner sides of the film pieces forming the aperture and facing each other, and a bottom end portion of one base member is formed to be longer than that of the other base member and bonded to the other film piece opposite thereto by an easily peelable seal, thereby forming an easily peelable portion which is peeled open to open the aperture at the time of opening. A spout member is provided with a spout portion including a base portion and a cylindrical portion projecting from the base portion, a sealing portion for sealing a tip portion of the cylindrical portion via a tearable weakened portion, and a cap portion. The weakened portion is torn by turning the cap portion to separate the sealing portion and the cap portion from the spout portion and simultaneously open the tip portion of the cylindrical portion, thereby forming a spout. The cap portion is shaped to cover the entire cylindrical portion, and the cap portion and the spout portion include a locking mechanism capable of locking the cap portion to the spout portion.
    • 6. 发明授权
    • Semiconductor device optimized to increase withstand voltage and reduce on resistance
    • 半导体器件经过优化,可提高耐压并降低导通电阻
    • US08022475B2
    • 2011-09-20
    • US12434128
    • 2009-05-01
    • Yasuhiro TakedaSeiji OtakeKazunori Fujita
    • Yasuhiro TakedaSeiji OtakeKazunori Fujita
    • H01L29/76H01L29/94
    • H01L21/823456H01L21/2815H01L21/823412H01L21/823487H01L29/0653H01L29/0878H01L29/41766H01L29/4236H01L29/42376H01L29/66734H01L29/7809H01L29/7813
    • An ON resistance of a trench gate type transistor and a withstand voltage of a planar type transistor are optimized at the same time. Each of first and second regions of a semiconductor layer is formed by epitaxial growth on each of first and second regions of a semiconductor substrate, respectively. A first buried layer is formed between the first region of the semiconductor substrate and the first region of the semiconductor layer, while a second buried layer is formed between the second region of the semiconductor substrate and the second region of the semiconductor layer. The first buried layer is formed of an N+ type first impurity-doped layer and an N type second impurity-doped layer that extends beyond the fist impurity-doped layer. The second buried layer is formed of an N+ type impurity-doped layer only. In the first region of the semiconductor layer, an impurity is diffused from a surface of the semiconductor layer deep into the semiconductor layer to form an N type third impurity-doped layer. The trench gate type transistor is formed in the first region of the semiconductor layer and the planar type transistor is formed in the second region of the semiconductor layer.
    • 同时优化沟槽栅型晶体管的导通电阻和平面型晶体管的耐电压。 半导体层的第一和第二区域中的每一个分别通过在半导体衬底的第一和第二区域中的每一个上外延生长而形成。 在半导体衬底的第一区域和半导体层的第一区域之间形成第一掩埋层,而在半导体衬底的第二区域和半导体层的第二区域之间形成第二掩埋层。 第一掩埋层由N +型第一杂质掺杂层和延伸超过第一杂质掺杂层的N型第二杂质掺杂层形成。 第二掩埋层仅由N +型杂质掺杂层形成。 在半导体层的第一区域中,杂质从半导体层的表面扩散到半导体层中以形成N型第三杂质掺杂层。 沟槽栅型晶体管形成在半导体层的第一区域中,并且平面型晶体管形成在半导体层的第二区域中。
    • 8. 发明申请
    • SUSTAINED RELEASE PREPARATION AND METHOD FOR PRODUCTION THEREOF
    • 可持续发布准备及其生产方法
    • US20100172988A1
    • 2010-07-08
    • US12159281
    • 2006-12-26
    • Yasuhiro TakedaMasayuki WatanabeAyumu Nishida
    • Yasuhiro TakedaMasayuki WatanabeAyumu Nishida
    • A61K31/216A61P13/00A61K9/10
    • A61K9/2054A61K9/2027A61K9/2031A61K31/222
    • Disclosed is a sustained release preparation which comprises an active ingredient having a higher release rate at pH 4 compared to that in pH 1.2 or pH 6.8 and exerts a controlled release of the active ingredient in a pH-independent manner. The sustained release preparation comprises ethyl (−)-2-[4-[2-[[(1S,2R)-2-hydroxy-2-(4-hydroxyphenyl)-1-methylethyl]amino]ethyl]-2,5-dimethyl-phenoxy]acetate hydrochloride as the active ingredient and a pH-independent gel-forming polymer and contains substantially no pH-controlling agent other than the polymer. The sustained release preparation can release the active ingredient in a pH-independent manner in the range from 1.2 to 6.8 and shows a constant release rate for a prolonged period of time. Therefore, the preparation is useful as a therapeutic agent for frequent urination/incontinence of urine which has a long-lasting effect.
    • 公开了一种持续释放制剂,其包含与pH 1.2或pH 6.8相比在pH 4下具有更高释放速率的活性成分,并以pH无关的方式进行有效成分的控制释放。 持续释放制剂包括( - ) - 2- [4- [2 - [[(1S,2R)-2-羟基-2-(4-羟基苯基)-1-甲基乙基]氨基]乙基] - 二甲基 - 苯氧基]乙酸酯盐酸盐作为活性成分,并且与pH无关的凝胶形成聚合物基本上不含聚合物以外的pH控制剂。 持续释放制剂可以以不依赖于pH的方式在1.2至6.8的范围内释放活性成分,并且在长时间内显示恒定的释放速率。 因此,该制剂可用作尿液尿频尿失禁的治疗剂,其具有持久的效果。
    • 9. 发明授权
    • Amplifying system
    • 放大系统
    • US07714648B2
    • 2010-05-11
    • US11920629
    • 2006-05-17
    • Yoichi OkuboToshio NojimaYasuhiro TakedaManabu NakamuraMasaru Adachi
    • Yoichi OkuboToshio NojimaYasuhiro TakedaManabu NakamuraMasaru Adachi
    • H03F3/68
    • H03F1/0288H03F1/56H03F3/602H03F2200/423
    • The performance of an amplifying system is improved by achieving adequate matching. The amplifying system for amplifying signals includes distributing means 1 that distribute a signal, a carrier amplifier 2 that amplifies the distributed first signal in Class AB, a peak amplifier 4 that amplifies the distributed second signal in Class B or Class C, a first transmission line having a given electric length and being connected to an output of the carrier amplifier, a second transmission line having a given electric length and being connected to an output of the peak amplifier, and a combining end 18 for combining an output of the first transmission line and an output of the second transmission line. An impedance of the combining end is differentiated from a parallel impedance of load impedances of the carrier amplifier and the peak amplifier at the maximum power converted respectively by the first transmission line and the second transmission line, or is set as a parallel impedance in which the load impedances of the carrier amplifier and the peak amplifier at the maximum power are changed.
    • 通过实现充分匹配,可以提高放大系统的性能。 用于放大信号的放大系统包括分配信号的分配装置1,放大AB类中分布的第一信号的载波放大器2,放大B类或C类中分布的第二信号的峰值放大器4,第一传输线 具有给定的电长度并连接到载波放大器的输出,具有给定电长度并连接到峰值放大器的输出的第二传输线,以及组合端18,用于组合第一传输线的输出 和第二传输线的输出。 组合端的阻抗与通过第一传输线和第二传输线分别转换的最大功率的载波放大器和峰值放大器的负载阻抗的并联阻抗不同,或者被设置为并联阻抗,其中 载波放大器和最大功率峰值放大器的负载阻抗发生变化。