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1. 发明申请

US20100310673A1 SUBSTANCE AND COMPOSITION BOTH CAPABLE OF IMPARTING HEAT RESISTANCE 有权
标题翻译：具有耐腐蚀性的两种物质和组合物
公开(公告)号：US20100310673A1
公开(公告)日：2010-12-09
申请号：US12867979
申请日：2009-03-31
申请人： Ayako Horigome , Mai Murata , Koji Yamauchi , Mitsunori Takase , Yasuhiro Takeda , Junichi Hashimoto , Ikumi Kojima
发明人： Ayako Horigome , Mai Murata , Koji Yamauchi , Mitsunori Takase , Yasuhiro Takeda , Junichi Hashimoto , Ikumi Kojima
IPC分类号： A61K33/34 , C07H21/00 , A61K33/26 , A61K33/30 , A61K38/40 , C07K14/79 , A61P31/04 , A61P3/00 , A61P37/04 , A61P29/00 , A23L1/305
CPC分类号： A61K47/42 , A23L33/19 , A61K9/0019 , A61K9/0095 , A61K9/08 , A61K9/2063 , A61K9/4866 , A61K38/40 , A61K47/26
摘要： An agent for thermally stabilizing lactoferrin, which comprises a nucleic acid as an active ingredient, can be added to lactoferrin to impart thermal stability to lactoferrin. Thermally stabilized lactoferrin can be heat-sterilized at a pH value around a neutral pH value while keeping its activity.
摘要翻译：可以将含有核酸作为活性成分的用于热稳定的乳铁蛋白的试剂加入到乳铁蛋白中以赋予乳铁蛋白热稳定性。热稳定的乳铁蛋白可以在pH值约为中性pH值的同时保持其活性而被热灭菌。

2. 发明授权

US08420128B2 Method of imparting heat resistance to lactoferrin 有权
标题翻译：赋予乳铁蛋白耐热性的方法
公开(公告)号：US08420128B2
公开(公告)日：2013-04-16
申请号：US12867979
申请日：2009-03-31
申请人： Ayako Horigome , Mai Murata , Koji Yamauchi , Mitsunori Takase , Yasuhiro Takeda , Junichi Hashimoto , Ikumi Kojima
发明人： Ayako Horigome , Mai Murata , Koji Yamauchi , Mitsunori Takase , Yasuhiro Takeda , Junichi Hashimoto , Ikumi Kojima
IPC分类号： A01N59/20 , A61K33/34
CPC分类号： A61K47/42 , A23L33/19 , A61K9/0019 , A61K9/0095 , A61K9/08 , A61K9/2063 , A61K9/4866 , A61K38/40 , A61K47/26
摘要： An agent for thermally stabilizing lactoferrin, which comprises a nucleic acid as an active ingredient, can be added to lactoferrin to impart thermal stability to lactoferrin. Thermally stabilized lactoferrin can be heat-sterilized at a pH value around a neutral pH value while keeping its activity.
摘要翻译：可以将含有核酸作为活性成分的用于热稳定的乳铁蛋白的试剂加入到乳铁蛋白中以赋予乳铁蛋白热稳定性。热稳定的乳铁蛋白可以在pH值约为中性pH值的同时保持其活性而被热灭菌。

3. 发明申请

US20100086243A1 Package Bag And Spout Member 有权
标题翻译：包装袋和喷嘴会员
公开(公告)号：US20100086243A1
公开(公告)日：2010-04-08
申请号：US12630544
申请日：2009-12-03
申请人： Yasuhiro Takeda , Kenji Washida , Takahiro Koyama , Junichi Hashimoto , Matsutarou Ono , Yasuharu Takada , Toshihiko Mori , Moritoshi Oguni
发明人： Yasuhiro Takeda , Kenji Washida , Takahiro Koyama , Junichi Hashimoto , Matsutarou Ono , Yasuharu Takada , Toshihiko Mori , Moritoshi Oguni
IPC分类号： B65D25/40 , B65D33/00
CPC分类号： B65D75/5883 , B65D2575/583
摘要： A spout member including a base portion which is fixed to a bag body, a cylindrical portion which protrudes upward from the base portion, and a sealing portion which seals a front end of the cylindrical portion through a breakable thin portion is disposed between two sheets of film forming the bag body. A sealing chamber accommodating the cylindrical portion and the sealing portion is opened by tearing the two sheets of film along an opening assisting line. An opening assisting plate protruding to at least one of a left side and a right side of the sealing portion is disposed above the opening assisting line. A sandwiching reinforcement seal portion for reinforcing the two sheets of film by sealing inner surfaces thereof is provided between the opening assisting plate and the opening assisting line.
摘要翻译：一种喷嘴构件，其包括固定到袋体的基部，从基部向上突出的圆柱形部分和通过可破裂的薄部分将圆柱形部分的前端密封的密封部分设置在两片胶片成型袋体。容纳圆筒部和密封部的密封室通过沿着打开辅助线撕裂两片胶片而打开。在密封部的左侧和右侧的至少一方突出的开启辅助板设置在开启辅助线的上方。在开启辅助板和开启辅助线之间设置用于通过密封其内表面来加强两片薄膜的夹层加强密封部。

4. 发明授权

US08657496B2 Package bag and spout member 有权
标题翻译：包装袋和喷嘴成员
公开(公告)号：US08657496B2
公开(公告)日：2014-02-25
申请号：US12630544
申请日：2009-12-03
申请人： Yasuhiro Takeda , Kenji Washida , Takahiro Koyama , Junichi Hashimoto , Matsutarou Ono , Yasuharu Takada , Toshihiko Mori , Moritoshi Oguni
发明人： Yasuhiro Takeda , Kenji Washida , Takahiro Koyama , Junichi Hashimoto , Matsutarou Ono , Yasuharu Takada , Toshihiko Mori , Moritoshi Oguni
IPC分类号： B65D33/00 , B65D65/26
CPC分类号： B65D75/5883 , B65D2575/583
摘要： A spout member including a base portion which is fixed to a bag body, a cylindrical portion which protrudes upward from the base portion, and a sealing portion which seals a front end of the cylindrical portion through a breakable thin portion is disposed between two sheets of film forming the bag body. A sealing chamber accommodating the cylindrical portion and the sealing portion is opened by tearing the two sheets of film along an opening assisting line. An opening assisting plate protruding to at least one of a left side and a right side of the sealing portion is disposed above the opening assisting line. A sandwiching reinforcement seal portion for reinforcing the two sheets of film by sealing inner surfaces thereof is provided between the opening assisting plate and the opening assisting line.
摘要翻译：一种喷嘴构件，其包括固定到袋体的基部，从基部向上突出的圆柱形部分和通过可破裂的薄部分将圆柱形部分的前端密封的密封部分设置在两片胶片成型袋体。容纳圆筒部和密封部的密封室通过沿着打开辅助线撕裂两片胶片而打开。在密封部的左侧和右侧的至少一方突出的开启辅助板设置在开启辅助线的上方。在开启辅助板和开启辅助线之间设置用于通过密封其内表面来加强两片薄膜的夹层加强密封部。

5. 发明授权

US08022475B2 Semiconductor device optimized to increase withstand voltage and reduce on resistance 有权
标题翻译：半导体器件经过优化，可提高耐压并降低导通电阻
公开(公告)号：US08022475B2
公开(公告)日：2011-09-20
申请号：US12434128
申请日：2009-05-01
申请人： Yasuhiro Takeda , Seiji Otake , Kazunori Fujita
发明人： Yasuhiro Takeda , Seiji Otake , Kazunori Fujita
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L21/823456 , H01L21/2815 , H01L21/823412 , H01L21/823487 , H01L29/0653 , H01L29/0878 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66734 , H01L29/7809 , H01L29/7813
摘要： An ON resistance of a trench gate type transistor and a withstand voltage of a planar type transistor are optimized at the same time. Each of first and second regions of a semiconductor layer is formed by epitaxial growth on each of first and second regions of a semiconductor substrate, respectively. A first buried layer is formed between the first region of the semiconductor substrate and the first region of the semiconductor layer, while a second buried layer is formed between the second region of the semiconductor substrate and the second region of the semiconductor layer. The first buried layer is formed of an N+ type first impurity-doped layer and an N type second impurity-doped layer that extends beyond the fist impurity-doped layer. The second buried layer is formed of an N+ type impurity-doped layer only. In the first region of the semiconductor layer, an impurity is diffused from a surface of the semiconductor layer deep into the semiconductor layer to form an N type third impurity-doped layer. The trench gate type transistor is formed in the first region of the semiconductor layer and the planar type transistor is formed in the second region of the semiconductor layer.
摘要翻译：同时优化沟槽栅型晶体管的导通电阻和平面型晶体管的耐电压。半导体层的第一和第二区域中的每一个分别通过在半导体衬底的第一和第二区域中的每一个上外延生长而形成。在半导体衬底的第一区域和半导体层的第一区域之间形成第一掩埋层，而在半导体衬底的第二区域和半导体层的第二区域之间形成第二掩埋层。第一掩埋层由N +型第一杂质掺杂层和延伸超过第一杂质掺杂层的N型第二杂质掺杂层形成。第二掩埋层仅由N +型杂质掺杂层形成。在半导体层的第一区域中，杂质从半导体层的表面扩散到半导体层中以形成N型第三杂质掺杂层。沟槽栅型晶体管形成在半导体层的第一区域中，并且平面型晶体管形成在半导体层的第二区域中。

6. 发明授权

US08014443B2 Non-linear distortion detection method and distortion compensation amplifying device 有权
标题翻译：非线性失真检测方法和失真补偿放大装置
公开(公告)号：US08014443B2
公开(公告)日：2011-09-06
申请号：US12078507
申请日：2008-04-01
申请人： Manabu Nakamura , Yasuhiro Takeda , Yoichi Okubo , Masaru Adachi , Naoki Hongo
发明人： Manabu Nakamura , Yasuhiro Takeda , Yoichi Okubo , Masaru Adachi , Naoki Hongo
IPC分类号： H03H7/30 , H03F1/26
CPC分类号： H03F1/32 , H03F1/0288 , H03F1/3247 , H03F3/245 , H03F2200/207
摘要： The present invention provides a non-linear distortion detection method and a distortion compensation amplifying device capable of suppressing increase of the circuit size and the power consumption even if the signal band is widened. A signal obtained by feeding back an output of a power amplifier is sampled by an A/D converter. An equalizer of a distortion detection unit uses an input signal d(n) of a predistorter as a reference symbol to detect an equalization error e(n) of the orthogonal demodulation signal u(n). An absolute value averaging unit outputs an absolute value of the equalization error e(n) which has been temporally averaged to E(n) as a distortion value to a control unit. According to the distortion value, the control unit adaptively controls the predistorter to perform distortion compensation.
摘要翻译：本发明提供即使信号频带变宽也能够抑制电路尺寸和功耗的增加的非线性失真检测方法和失真补偿放大装置。通过反馈功率放大器的输出而获得的信号由A / D转换器采样。失真检测单元的均衡器使用预失真器的输入信号d（n）作为参考符号来检测正交解调信号u（n）的均衡误差e（n）。绝对值平均单元将对时间平均的均衡误差e（n）的绝对值作为失真值输出到控制单元。根据失真值，控制单元自适应地控制预失真器进行失真补偿。

7. 发明申请

US20100172988A1 SUSTAINED RELEASE PREPARATION AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：可持续发布准备及其生产方法
公开(公告)号：US20100172988A1
公开(公告)日：2010-07-08
申请号：US12159281
申请日：2006-12-26
申请人： Yasuhiro Takeda , Masayuki Watanabe , Ayumu Nishida
发明人： Yasuhiro Takeda , Masayuki Watanabe , Ayumu Nishida
IPC分类号： A61K31/216 , A61P13/00 , A61K9/10
CPC分类号： A61K9/2054 , A61K9/2027 , A61K9/2031 , A61K31/222
摘要： Disclosed is a sustained release preparation which comprises an active ingredient having a higher release rate at pH 4 compared to that in pH 1.2 or pH 6.8 and exerts a controlled release of the active ingredient in a pH-independent manner. The sustained release preparation comprises ethyl (−)-2-[4-[2-[[(1S,2R)-2-hydroxy-2-(4-hydroxyphenyl)-1-methylethyl]amino]ethyl]-2,5-dimethyl-phenoxy]acetate hydrochloride as the active ingredient and a pH-independent gel-forming polymer and contains substantially no pH-controlling agent other than the polymer. The sustained release preparation can release the active ingredient in a pH-independent manner in the range from 1.2 to 6.8 and shows a constant release rate for a prolonged period of time. Therefore, the preparation is useful as a therapeutic agent for frequent urination/incontinence of urine which has a long-lasting effect.
摘要翻译：公开了一种持续释放制剂，其包含与pH 1.2或pH 6.8相比在pH 4下具有更高释放速率的活性成分，并以pH无关的方式进行有效成分的控制释放。持续释放制剂包括（ - ） - 2- [4- [2 - [[（1S，2R）-2-羟基-2-（4-羟基苯基）-1-甲基乙基]氨基]乙基] - 二甲基 - 苯氧基]乙酸酯盐酸盐作为活性成分，并且与pH无关的凝胶形成聚合物基本上不含聚合物以外的pH控制剂。持续释放制剂可以以不依赖于pH的方式在1.2至6.8的范围内释放活性成分，并且在长时间内显示恒定的释放速率。因此，该制剂可用作尿液尿频尿失禁的治疗剂，其具有持久的效果。

8. 发明授权

US07714648B2 Amplifying system 有权
标题翻译：放大系统
公开(公告)号：US07714648B2
公开(公告)日：2010-05-11
申请号：US11920629
申请日：2006-05-17
申请人： Yoichi Okubo , Toshio Nojima , Yasuhiro Takeda , Manabu Nakamura , Masaru Adachi
发明人： Yoichi Okubo , Toshio Nojima , Yasuhiro Takeda , Manabu Nakamura , Masaru Adachi
IPC分类号： H03F3/68
CPC分类号： H03F1/0288 , H03F1/56 , H03F3/602 , H03F2200/423
摘要： The performance of an amplifying system is improved by achieving adequate matching. The amplifying system for amplifying signals includes distributing means 1 that distribute a signal, a carrier amplifier 2 that amplifies the distributed first signal in Class AB, a peak amplifier 4 that amplifies the distributed second signal in Class B or Class C, a first transmission line having a given electric length and being connected to an output of the carrier amplifier, a second transmission line having a given electric length and being connected to an output of the peak amplifier, and a combining end 18 for combining an output of the first transmission line and an output of the second transmission line. An impedance of the combining end is differentiated from a parallel impedance of load impedances of the carrier amplifier and the peak amplifier at the maximum power converted respectively by the first transmission line and the second transmission line, or is set as a parallel impedance in which the load impedances of the carrier amplifier and the peak amplifier at the maximum power are changed.
摘要翻译：通过实现充分匹配，可以提高放大系统的性能。用于放大信号的放大系统包括分配信号的分配装置1，放大AB类中分布的第一信号的载波放大器2，放大B类或C类中分布的第二信号的峰值放大器4，第一传输线具有给定的电长度并连接到载波放大器的输出，具有给定电长度并连接到峰值放大器的输出的第二传输线，以及组合端18，用于组合第一传输线的输出和第二传输线的输出。组合端的阻抗与通过第一传输线和第二传输线分别转换的最大功率的载波放大器和峰值放大器的负载阻抗的并联阻抗不同，或者被设置为并联阻抗，其中载波放大器和最大功率峰值放大器的负载阻抗发生变化。

9. 发明授权

US07514749B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07514749B2
公开(公告)日：2009-04-07
申请号：US12122717
申请日：2008-05-18
申请人： Kunihiko Kato , Masami Koketsu , Shigeya Toyokawa , Keiichi Yoshizumi , Hideki Yasuoka , Yasuhiro Takeda
发明人： Kunihiko Kato , Masami Koketsu , Shigeya Toyokawa , Keiichi Yoshizumi , Hideki Yasuoka , Yasuhiro Takeda
IPC分类号： H01L23/62
CPC分类号： H01L21/823857 , H01L21/823814 , H01L21/823878 , H01L27/0629 , H01L28/40
摘要： A method of manufacturing a semiconductor integrated circuit device having on the same substrate both a high breakdown voltage MISFET and a low breakdown voltage MISFET is provided. An element isolation trench is formed in advance so that the width thereof is larger than the sum of the thickness of a polycrystalline silicon film serving as a gate electrode of a low breakdown voltage, the thickness of a gate insulating film and an alignment allowance in processing of a gate electrode in a direction orthogonal to the extending direction of the gate electrode and is larger than the thickness of the polycrystalline silicon film in a planar region not overlapping the gate electrode. It is possible to decrease the number of manufacturing steps for the semiconductor integrated circuit device.
摘要翻译：提供一种制造半导体集成电路器件的方法，该半导体集成电路器件在相同的衬底上具有高击穿电压MISFET和低击穿电压MISFET。预先形成元件隔离沟槽，使得其宽度大于用作低击穿电压的栅电极的多晶硅膜的厚度，栅绝缘膜的厚度和处理中的对准余量之和在与栅电极的延伸方向正交的方向上的栅电极大于不与栅电极重叠的平面区域中的多晶硅膜的厚度。可以减少半导体集成电路器件的制造步骤的数量。

10. 发明申请

US20060220146A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060220146A1
公开(公告)日：2006-10-05
申请号：US11392648
申请日：2006-03-30
申请人： Yasuhiro Takeda , Koji Yamashita
发明人： Yasuhiro Takeda , Koji Yamashita
IPC分类号： H01L29/76
CPC分类号： H01L21/761 , H01L21/823878 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device for effectively suppressing noise propagation between circuits. The semiconductor device includes a semiconductor substrate having a main surface. Two circuit regions are defined in the semiconductor substrate. A circuit isolation region is located between the two circuit regions. A dummy diffusion layer is formed in the circuit isolation region. The dummy diffusion layer has an upper surface that is lower than the main surface of the semiconductor substrate.
摘要翻译：一种有效抑制电路之间的噪声传播的半导体器件。半导体器件包括具有主表面的半导体衬底。在半导体衬底中限定两个电路区域。电路隔离区域位于两个电路区域之间。在电路隔离区域中形成虚拟扩散层。虚拟扩散层具有比半导体基板的主表面低的上表面。

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