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1. 发明授权

US4219373A Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4219373A
公开(公告)日：1980-08-26
申请号：US1163
申请日：1979-01-05
申请人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa , Yoko Wakui
发明人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa , Yoko Wakui
IPC分类号： H01L21/225 , H01L21/332 , H01L21/761
CPC分类号： H01L29/66393 , H01L21/2254 , H01L21/761 , Y10S438/92
摘要： A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.
摘要翻译：一种制造这样的半导体器件的方法，其中铝层被选择性地沉积在硅半导体衬底的主表面上，此后铝通过在包括氧气的气氛中的热处理而被选择性地扩散到硅半导体衬底中。在硅半导体衬底的至少一个主表面中选择性地形成凹部，将铝沉积到凹部上，然后对硅半导体衬底进行热处理以选择性地将铝扩散到硅半导体衬底中。形成在经受铝扩散的主表面上的硅铝合金的氧化物层不会对光掩模造成任何损坏，同时可以提高光掩模的定位精度。还可以防止将半导体元件安装到散热器上的故障。

2. 发明授权

US4351677A Method of manufacturing semiconductor device having aluminum diffused semiconductor substrate 失效
标题翻译：具有铝扩散半导体衬底的半导体器件的制造方法
公开(公告)号：US4351677A
公开(公告)日：1982-09-28
申请号：US167399
申请日：1980-07-10
申请人： Yasuhiro Mochizuki , Yoko Wakui , Hiroaki Hachino
发明人： Yasuhiro Mochizuki , Yoko Wakui , Hiroaki Hachino
IPC分类号： H01L21/761 , H01L21/033 , H01L21/22 , H01L21/225 , H01L21/331 , H01L29/73 , H01L29/74
CPC分类号： H01L21/033 , H01L21/22 , H01L21/2254
摘要： A method of manufacturing a semiconductor device of the type wherein aluminum layers are selectively deposited on a major surface of a silicon semiconductor substrate and thereafter aluminum is selectively diffused into the silicon semiconductor substrate by means of heat treatment. SiO.sub.2 mask is selectively formed on at least one major surface of the silicon semiconductor substrate, then aluminum is deposited onto the major surface being close to but separated from the SiO.sub.2 mask, subsequently the silicon semiconductor substrate is subjected to a heat treatment to selectively diffuse the aluminum into the silicon semiconductor substrate.The SiO.sub.2 mask which is formed before the heat treatment prevents impurity atoms from autodoping through the SiO.sub.2 mask. No cracking occurs in the SiO.sub.2 mask because the aluminum diffusion source is apart from the periphery of the SiO.sub.2 mask.
摘要翻译：制造这样的半导体器件的方法，其中铝层被选择性地沉积在硅半导体衬底的主表面上，此后铝通过热处理选择性地扩散到硅半导体衬底中。 SiO 2掩模选择性地形成在硅半导体衬底的至少一个主表面上，然后将铝沉积到接近但与SiO 2掩模分离的主表面上，随后对硅半导体衬底进行热处理以选择性地扩散铝进入硅半导体衬底。在热处理之前形成的SiO 2掩模防止杂质原子通过SiO 2掩模自动掺杂。由于铝扩散源与SiO 2掩模的周围分开，因此在SiO 2掩模中不会发生裂纹。

3. 发明授权

US4193826A Vapor phase diffusion of aluminum with or without boron 失效
标题翻译：具有或不具有硼的铝的气相扩散
公开(公告)号：US4193826A
公开(公告)日：1980-03-18
申请号：US931399
申请日：1978-08-07
申请人： Yasuhiro Mochizuki , Hiroaki Hachino , Yasumichi Yasuda , Yutaka Misawa , Takuzo Ogawa
发明人： Yasuhiro Mochizuki , Hiroaki Hachino , Yasumichi Yasuda , Yutaka Misawa , Takuzo Ogawa
IPC分类号： H01L21/223 , H01L21/28
CPC分类号： H01L21/223
摘要： A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.
摘要翻译：一种制造半导体器件的方法，该方法通过加热其中设置有硅衬底和铝源的密封管将铝蒸气选择性地扩散到硅衬底中。扩散是用小于约1017原子/ cm3的低浓度铝进行的，从而可以使用氧化硅膜作为扩散掩模，用于在硅衬底的预定区域选择性扩散铝。

4. 发明授权

US4154632A Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device 失效
标题翻译：将铝扩散到硅衬底中用于制造半导体器件的方法
公开(公告)号：US4154632A
公开(公告)日：1979-05-15
申请号：US931390
申请日：1978-08-07
申请人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa
发明人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa
IPC分类号： H01L21/225
CPC分类号： H01L21/2254 , Y10S148/033
摘要： An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffusion layer. Thereafter, the aluminum-silicon alloy layer is removed from the major surface of the silicon substrate. Drive-in diffusion is performed so as to diffuse, aluminum included in the silicon recrystallization layer and the aluminum diffusion layer, into the silicon substrate. As a result, the aluminum diffusion concentration of 10.sup.16 -10.sup.19 atoms/cm.sup.3 can be obtained.
摘要翻译：通过在硅衬底的主表面上真空蒸发形成铝扩散源层。加热硅衬底以形成铝 - 硅合金层，铝掺杂硅再结晶层和铝扩散层。此后，从硅衬底的主表面去除铝 - 硅合金层。进行驱入扩散，以将包含在硅再结晶层中的铝和铝扩散层扩散到硅衬底中。结果，可以获得1016-1019原子/ cm3的铝扩散浓度。

5. 发明授权

US4516149A Semiconductor device having ribbon electrode structure and method for fabricating the same 失效
标题翻译：具有带状电极结构的半导体器件及其制造方法
公开(公告)号：US4516149A
公开(公告)日：1985-05-07
申请号：US315905
申请日：1981-10-28
申请人： Yoko Wakui , Hiroaki Hachino , Mamoru Sawahata , Tasao Soga , Tomio Yasuda , Michio Ooue
发明人： Yoko Wakui , Hiroaki Hachino , Mamoru Sawahata , Tasao Soga , Tomio Yasuda , Michio Ooue
IPC分类号： H01L29/80 , H01L21/33 , H01L21/331 , H01L21/60 , H01L23/14 , H01L23/482 , H01L23/498 , H01L23/522 , H01L29/70 , H01L29/73 , H01L29/74 , H01L29/861 , H01L23/48 , H01L29/44 , H01L29/52
CPC分类号： H01L23/5227 , H01L23/145 , H01L23/4824 , H01L23/4985 , H01L24/05 , H01L24/50 , H01L2224/04042 , H01L2224/49107 , H01L2224/4911 , H01L2224/73269 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/14
摘要： A semiconductor device is disclosed which is provided with at least one flexible conducting film having an inner electrode portion and an outer electrode portion. The inner electrode portion is conductively bonded to at least one of two kinds of electrode films formed on one main surface of a semiconductor substrate, and has a form similar to the shape of the electrode film. The outer electrode portion is integrated with the inner electrode portion into one body but is not bonded to the electrode film. The conducting film can be previously bonded to a transparent insulating film, if desired, and is arranged in registry with the electrode film on the semiconductor substrate, while being supported by the insulating film. Accordingly, the inner electrode portion of the conducting film is bonded to the electrode film having a complicated pattern, readily and accurately. The inner electrode portion serves to reduce the electric resistance of the electrode film and to increase the current capacity of the electrode. If a transparent insulating film has been used, it can be removed after device formation, if desired.
摘要翻译：公开了一种半导体器件，其具有至少一个具有内部电极部分和外部电极部分的柔性导电膜。内部电极部分导电结合到形成在半导体衬底的一个主表面上的两种电极膜中的至少一种，并且具有与电极膜的形状相似的形式。外电极部与内电极部一体地形成为一体，但不与电极膜接合。如果需要，可以将导电膜预先粘合到透明绝缘膜上，并且在由绝缘膜支撑的同时与半导体衬底上的电极膜对准布置。因此，导电膜的内部电极部分容易且准确地接合到具有复杂图案的电极膜。内部电极部分用于减小电极膜的电阻并增加电极的电流容量。如果已经使用透明绝缘膜，则如果需要，可以在器件形成之后去除透明绝缘膜。

6. 发明授权

US4651191A Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US4651191A
公开(公告)日：1987-03-17
申请号：US880942
申请日：1986-06-25
申请人： Michio Ooue , Yoko Wakui , Hiroaki Hachino
发明人： Michio Ooue , Yoko Wakui , Hiroaki Hachino
IPC分类号： H01L21/60 , H01L21/603 , H01L23/485 , H01L23/54 , H01L23/48
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/13099 , H01L2224/81801 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1301
摘要： Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of those elements which react with the material of the electrode or external electrode and form a compound harder and more brittle than the electrode material are smaller on the portion coming into contact with the electrode or external electrode than at the other portions. A fabrication method of such a semiconductor device is also disclosed, which method involving the steps of laminating and depositing an at least two-layered metallic layer on the surface of the electrode on the semiconductor substrate or on the surface of the external electrode, bringing the electrodes of the at least two-layered metallic layer into intimate contact with each other while opposing one another, and bonding them together in the presence of the force of pressure applied to both electrodes while they are being heated to a temperature close to an eutectic temperature of an alloy consisting of the metals of the uppermost layer and subsequent layer, immediately therebelow, of the metallic layer.
摘要翻译：公开了一种半导体器件，其被构造成使得在形成用于将半导体衬底上的电极接合到外部电极的钎焊材料的元素中，与电极或外部电极的材料反应并形成复合物的那些元素的量更多比与其他部分相比，与电极或外部电极接触的部分比电极材料脆。还公开了一种这样的半导体器件的制造方法，该方法包括以下步骤：在半导体衬底或外部电极的表面上的电极表面上层叠和沉积至少两层的金属层，所述至少两层金属层的电极彼此相对地彼此紧密接触，并且在施加到两个电极的压力的存在下将它们结合在一起，同时将它们加热到接近共晶温度的温度由最上层的金属和紧邻的金属层的后续层组成的合金。

7. 发明授权

US4484214A pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth 失效
标题翻译： pn具有玻璃护城河的结点装置和比基底pn结深度更深的通道阻挡区域
公开(公告)号：US4484214A
公开(公告)日：1984-11-20
申请号：US332713
申请日：1981-12-21
申请人： Yutaka Misawa , Masaaki Takahashi , Hiroaki Hachino
发明人： Yutaka Misawa , Masaaki Takahashi , Hiroaki Hachino
IPC分类号： C03C8/04 , H01L23/29 , H01L23/31 , H01L23/482 , H01L29/06 , H01L29/34 , H01L27/04 , H01L29/74
CPC分类号： H01L23/4824 , H01L23/291 , H01L23/3178 , H01L29/0638 , H01L29/0661 , H01L2924/0002
摘要： A semiconductor device is provided having a semiconductor substrate which has an annular moat formed in one major surface thereof and includes a pn junction terminating at an inner inclined side surface of the moat. In order to provide a high blocking voltage of the pn junction, the moat is filled or coated with glass material having a surface charge capable of inducing, in a semiconductor layer of one conductivity type in contact with the bottom of the moat, carriers having a polarity opposite to the above-mentioned conductivity type. An annular, highly-doped channel stopper region of the above-mentioned conductivity type is provided at the outside of the moat in a manner to be kept in contact with the moat, and the depth of the channel stopper region from the major surface is preferably made greater than the depth of the pn junction from the major surface.
摘要翻译：提供一种半导体器件，其具有半导体衬底，该半导体衬底在其一个主表面上形成有环形沟槽，并且包括终止于护城河的内倾斜侧表面处的pn结。为了提供pn结的高阻挡电压，护城河被填充或涂覆有玻璃材料，该玻璃材料具有表面电荷能够在与护城河底部接触的一种导电类型的半导体层中引入，载体具有极性与上述导电类型相反。上述导电类型的环状高掺杂通道阻挡区域以与护城河保持接触的方式设置在护城河的外侧，并且沟槽阻挡区域与主表面的深度优选为大于从主表面的pn结的深度。

8. 发明授权

US4295115A Semiconductor absolute pressure transducer assembly and method 失效
标题翻译：半导体绝对压力传感器组件及方法
公开(公告)号：US4295115A
公开(公告)日：1981-10-13
申请号：US27157
申请日：1979-04-04
申请人： Minoru Takahashi , Takahiko Tanigami , Kaoru Uchiyama , Hitoshi Minorikawa , Motohisa Nishihara , Kanji Kawakami , Seiko Suzuki , Hiroaki Hachino , Yutaka Misawa
发明人： Minoru Takahashi , Takahiko Tanigami , Kaoru Uchiyama , Hitoshi Minorikawa , Motohisa Nishihara , Kanji Kawakami , Seiko Suzuki , Hiroaki Hachino , Yutaka Misawa
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84 , G01L1/22
CPC分类号： G01L19/0069 , G01L19/146 , G01L19/147 , H01L29/84 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/8592 , Y10T29/49103
摘要： A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.
摘要翻译：半导体绝对压力传感器组件具有硅膜组件和覆盖构件。硅膜组件具有环形压敏膜，其表面是扩散的压电电阻器和导电路径。由硼硅酸盐玻璃构成的覆盖件在其中形成有圆形孔。在其上扩散了压电电阻和导电路径的硅膜组件的表面上沉积二氧化硅钝化层。此外，在钝化层上，通过例如蒸发硅形成导电层。并且玻璃覆盖部件通过阳极接合结合在硅膜组件上。也就是说，硅膜组件和玻璃覆盖件被加热到一定的高温，并且施加在硅隔膜组件和玻璃覆盖件的导电层上的相对高的电压。

9. 发明授权

US4322980A Semiconductor pressure sensor having plural pressure sensitive diaphragms and method 失效
标题翻译：具有多个压敏膜的半导体压力传感器及方法
公开(公告)号：US4322980A
公开(公告)日：1982-04-06
申请号：US170663
申请日：1979-11-08
申请人： Seikou Suzuki , Motohisa Nishihara , Kanji Kawakami , Hideo Sato , Shigeyuki Kobori , Hiroaki Hachino , Minoru Takahashi
发明人： Seikou Suzuki , Motohisa Nishihara , Kanji Kawakami , Hideo Sato , Shigeyuki Kobori , Hiroaki Hachino , Minoru Takahashi
IPC分类号： G01L9/00 , G01L9/06 , H01L23/15 , H01L27/20
CPC分类号： G01L19/147 , G01L19/0038 , G01L19/148 , G01L9/0054 , G01L9/065 , H01L23/15 , H01L27/20 , H01L2224/45144 , H01L2224/48091
摘要： A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures.A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.
摘要翻译：一种半导体压力传感器，具有多个压敏光阑，并能产生至少两个压力的电信号。半导体压力传感器具有半导体单晶芯片（1），其上形成有两个隔膜（12a，12b），成对的应变计（13a和14a和13b和14b），每个压敏传感器在每个压敏敏感元件隔膜，用于半导体单晶上的这些应变计的电连接的电极（15a和16a，15b和16b）和硼硅酸盐玻璃的绝缘基板，热膨胀系数基本上等于所述半导体单晶晶体芯片，其中半导体单晶芯片（1）和玻璃基板（2）通过阳极接合方法彼此接合，从而能够获得几乎不产生误差输出的半导体压力传感器。

10. 发明授权

US4970575A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4970575A
公开(公告)日：1990-11-13
申请号：US507096
申请日：1990-04-09
申请人： Tasao Soga , Hiroaki Hachino , Mamoru Sawahata , Fumio Nakano , Fumiyuki Kobayashi , Seigou Yukutake
发明人： Tasao Soga , Hiroaki Hachino , Mamoru Sawahata , Fumio Nakano , Fumiyuki Kobayashi , Seigou Yukutake
IPC分类号： H01L23/34 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/473 , H01L25/10
CPC分类号： H01L23/3185 , H01L23/293 , H01L23/3157 , H01L23/473 , H01L24/97 , H01L25/0655 , H01L25/105 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/97 , H01L2225/1023 , H01L2225/107 , H01L2225/1094 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/10253 , H01L2924/14 , H01L2924/15312 , H01L2924/15313 , H01L2924/18161
摘要： A substrate and semiconductor chips are connected by solder bumps and a vacant space around the solder bumps is coated with resin in such a degree that the tops of the semiconductor chips are not coated therewith. Epoxy resin or a resin having a smaller thermal expansion coefficient than the epoxy resin is used in the resin coating, and an inorganic material having a smaller thermal expansion coefficient than said resin is mixed therein.
摘要翻译：衬底和半导体芯片通过焊料凸块连接，并且焊料凸块周围的空白空间用树脂涂覆，使得半导体芯片的顶部不被涂覆。在树脂涂料中使用环氧树脂或具有比环氧树脂更小的热膨胀系数的树脂，并且将具有比所述树脂热膨胀系数小的无机材料混合在其中。

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