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1. 发明授权

US4219373A Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4219373A
公开(公告)日：1980-08-26
申请号：US1163
申请日：1979-01-05
申请人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa , Yoko Wakui
发明人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa , Yoko Wakui
IPC分类号： H01L21/225 , H01L21/332 , H01L21/761
CPC分类号： H01L29/66393 , H01L21/2254 , H01L21/761 , Y10S438/92
摘要： A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.
摘要翻译：一种制造这样的半导体器件的方法，其中铝层被选择性地沉积在硅半导体衬底的主表面上，此后铝通过在包括氧气的气氛中的热处理而被选择性地扩散到硅半导体衬底中。在硅半导体衬底的至少一个主表面中选择性地形成凹部，将铝沉积到凹部上，然后对硅半导体衬底进行热处理以选择性地将铝扩散到硅半导体衬底中。形成在经受铝扩散的主表面上的硅铝合金的氧化物层不会对光掩模造成任何损坏，同时可以提高光掩模的定位精度。还可以防止将半导体元件安装到散热器上的故障。

2. 发明授权

US4351677A Method of manufacturing semiconductor device having aluminum diffused semiconductor substrate 失效
标题翻译：具有铝扩散半导体衬底的半导体器件的制造方法
公开(公告)号：US4351677A
公开(公告)日：1982-09-28
申请号：US167399
申请日：1980-07-10
申请人： Yasuhiro Mochizuki , Yoko Wakui , Hiroaki Hachino
发明人： Yasuhiro Mochizuki , Yoko Wakui , Hiroaki Hachino
IPC分类号： H01L21/761 , H01L21/033 , H01L21/22 , H01L21/225 , H01L21/331 , H01L29/73 , H01L29/74
CPC分类号： H01L21/033 , H01L21/22 , H01L21/2254
摘要： A method of manufacturing a semiconductor device of the type wherein aluminum layers are selectively deposited on a major surface of a silicon semiconductor substrate and thereafter aluminum is selectively diffused into the silicon semiconductor substrate by means of heat treatment. SiO.sub.2 mask is selectively formed on at least one major surface of the silicon semiconductor substrate, then aluminum is deposited onto the major surface being close to but separated from the SiO.sub.2 mask, subsequently the silicon semiconductor substrate is subjected to a heat treatment to selectively diffuse the aluminum into the silicon semiconductor substrate.The SiO.sub.2 mask which is formed before the heat treatment prevents impurity atoms from autodoping through the SiO.sub.2 mask. No cracking occurs in the SiO.sub.2 mask because the aluminum diffusion source is apart from the periphery of the SiO.sub.2 mask.
摘要翻译：制造这样的半导体器件的方法，其中铝层被选择性地沉积在硅半导体衬底的主表面上，此后铝通过热处理选择性地扩散到硅半导体衬底中。 SiO 2掩模选择性地形成在硅半导体衬底的至少一个主表面上，然后将铝沉积到接近但与SiO 2掩模分离的主表面上，随后对硅半导体衬底进行热处理以选择性地扩散铝进入硅半导体衬底。在热处理之前形成的SiO 2掩模防止杂质原子通过SiO 2掩模自动掺杂。由于铝扩散源与SiO 2掩模的周围分开，因此在SiO 2掩模中不会发生裂纹。

3. 发明授权

US4154632A Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device 失效
标题翻译：将铝扩散到硅衬底中用于制造半导体器件的方法
公开(公告)号：US4154632A
公开(公告)日：1979-05-15
申请号：US931390
申请日：1978-08-07
申请人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa
发明人： Yasuhiro Mochizuki , Hiroaki Hachino , Yutaka Misawa
IPC分类号： H01L21/225
CPC分类号： H01L21/2254 , Y10S148/033
摘要： An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffusion layer. Thereafter, the aluminum-silicon alloy layer is removed from the major surface of the silicon substrate. Drive-in diffusion is performed so as to diffuse, aluminum included in the silicon recrystallization layer and the aluminum diffusion layer, into the silicon substrate. As a result, the aluminum diffusion concentration of 10.sup.16 -10.sup.19 atoms/cm.sup.3 can be obtained.
摘要翻译：通过在硅衬底的主表面上真空蒸发形成铝扩散源层。加热硅衬底以形成铝 - 硅合金层，铝掺杂硅再结晶层和铝扩散层。此后，从硅衬底的主表面去除铝 - 硅合金层。进行驱入扩散，以将包含在硅再结晶层中的铝和铝扩散层扩散到硅衬底中。结果，可以获得1016-1019原子/ cm3的铝扩散浓度。

4. 发明授权

US4193826A Vapor phase diffusion of aluminum with or without boron 失效
标题翻译：具有或不具有硼的铝的气相扩散
公开(公告)号：US4193826A
公开(公告)日：1980-03-18
申请号：US931399
申请日：1978-08-07
申请人： Yasuhiro Mochizuki , Hiroaki Hachino , Yasumichi Yasuda , Yutaka Misawa , Takuzo Ogawa
发明人： Yasuhiro Mochizuki , Hiroaki Hachino , Yasumichi Yasuda , Yutaka Misawa , Takuzo Ogawa
IPC分类号： H01L21/223 , H01L21/28
CPC分类号： H01L21/223
摘要： A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.
摘要翻译：一种制造半导体器件的方法，该方法通过加热其中设置有硅衬底和铝源的密封管将铝蒸气选择性地扩散到硅衬底中。扩散是用小于约1017原子/ cm3的低浓度铝进行的，从而可以使用氧化硅膜作为扩散掩模，用于在硅衬底的预定区域选择性扩散铝。

5. 发明授权

US07319465B2 Low-power driven display device 失效
标题翻译：低功耗驱动显示设备
公开(公告)号：US07319465B2
公开(公告)日：2008-01-15
申请号：US10648789
申请日：2003-08-27
申请人： Yoshiro Mikami , Hiroki Kaneko , Yasuhiro Mochizuki , Katsumi Kondo
发明人： Yoshiro Mikami , Hiroki Kaneko , Yasuhiro Mochizuki , Katsumi Kondo
IPC分类号： G09G5/00 , G06F3/038
CPC分类号： G09G3/344 , G09G3/3648 , G09G2300/0408 , G09G2300/0842 , G09G2300/0857 , G09G2310/027 , G09G2310/04 , G09G2320/10 , G09G2330/02 , G09G2330/021
摘要： For a display device having a solar cell and a power buffer for keeping stored electric power, a display system which has a low-power drive mode, self-contained power and no need for recharging or power wiring is provided. The display system includes a solar cell using a thin-film semiconductor, a power storage element for temporarily storing the produced power, a driving circuit, a matrix display unit, a display rewrite instruction unit for inputting screen rewrite and a control circuit and starts rewriting a display when power sufficient to rewrite an image screen is stored in the solar cell. The display device having remarkable portability and no limited battery life, which controls a display mode depending on the power produced by the solar cell, can display even when power generation is low and allows self-contained power even if the storage element has a small capacity, can be obtained.
摘要翻译：对于具有用于保持存储电力的太阳能电池和电源缓冲器的显示装置，提供具有低功率驱动模式，独立电源并且不需要充电或电力布线的显示系统。显示系统包括使用薄膜半导体的太阳能电池，用于临时存储所产生的电力的电力存储元件，驱动电路，矩阵显示单元，用于输入屏幕重写的显示重写指令单元和控制电路，并开始重写在足够重写图像屏幕的电力时的显示器被存储在太阳能电池中。即使在发电量低的情况下，也能够显示出依赖太阳能电池产生的功率来控制显示模式的显示便携性和电池寿命有限的显示装置，即使存储元件的容量小，可以获得。

6. 发明申请

US20130009649A1 WIRE HARNESS CONTINUITY INSPECTION DEVICE, WIRE HARNESS CONTINUITY INSPECTION PROGRAM, AND WIRE HARNESS CONTINUITY INSPECTION METHOD 有权
标题翻译：线束连续检测装置，线束连续检测程序和线束连续检测方法
公开(公告)号：US20130009649A1
公开(公告)日：2013-01-10
申请号：US13577703
申请日：2011-02-04
申请人： Noriaki Sasaki , Yasuhiro Mochizuki
发明人： Noriaki Sasaki , Yasuhiro Mochizuki
IPC分类号： G01R31/04
CPC分类号： B60R16/0207 , G01R31/045
摘要： A wire harness continuity inspection method includes: specifying a first certain electrical wire and a second certain electrical wire of which one end is connected to the other end of the first certain electrical wire, described in the first region-based connector/wiring information, and regarding them as a single electrical wire; referring to auxiliary device-based wiring information to obtain a first terminal of a first electrical component and a second terminal of a second electrical component connected by a circuit line, which are described in the auxiliary device-based wiring information; referring to the region-based connector/wiring information to specify a first electrical wire of which one end is connected to the first terminal of the first electrical component, described in the region-based connector/wiring information; and determining whether the terminal connected to the other end of the first electrical wire is identical to the second terminal of the second electrical component.
摘要翻译：线束连续性检查方法包括：在第一区域连接器/布线信息中描述的第一特定电线和第一特定电线，其一端连接到第一特定电线的另一端，以及将其作为单根电线; 参考基于辅助设备的布线信息，以获得在基于辅助设备的布线信息中描述的第一电气部件的第一端子和由电路线连接的第二电气部件的第二端子; 参考基于区域的连接器/布线信息，以指定在基于区域的连接器/布线信息中描述的第一电线，其一端连接到第一电气部件的第一端子; 以及确定连接到第一电线的另一端的端子是否与第二电气部件的第二端子相同。

7. 发明授权

US06300415B1 Propylene composition, process for preparing the same, polypropylene composition, and molded articles 有权
标题翻译：丙烯组合物，其制备方法，聚丙烯组合物和模制品
公开(公告)号：US06300415B1
公开(公告)日：2001-10-09
申请号：US09068949
申请日：1998-08-14
申请人： Chikashi Okayama , Takanori Nakashima , Masami Kimura , Mayumi Wakata , Kazuhiro Kimura , Toshiki Yamamoto , Hirohisa Ishii , Masataka Sugimoto , Kunio Gouda , Yasuhiro Mochizuki , Noriaki Saito , Junichiro Yokota , Shouji Kawano , Yasuhiko Nakagawa
发明人： Chikashi Okayama , Takanori Nakashima , Masami Kimura , Mayumi Wakata , Kazuhiro Kimura , Toshiki Yamamoto , Hirohisa Ishii , Masataka Sugimoto , Kunio Gouda , Yasuhiro Mochizuki , Noriaki Saito , Junichiro Yokota , Shouji Kawano , Yasuhiko Nakagawa
IPC分类号： C08L2312
CPC分类号： C08J5/18 , B32B27/32 , C08F110/06 , C08F210/06 , C08F255/02 , C08F297/083 , C08J2323/10 , C08L23/0815 , C08L23/10 , C08L23/16 , C08L51/06 , C08L53/00 , C08L2666/04 , C08L2666/02 , C08F2500/15 , C08F2500/12 , C08F2500/26 , C08F210/16 , C08F2500/17
摘要： A polypropylene composition for the production of various molded articles which are excellent in moldability, mold shrinkage factor on molding, rigidity, flexibility, impact resistance, in particular low-temperature impact resistance, transparency, gloss, stress-whitening resistance, and the balance thereof; various molded articles having the above properties; a propylene composition which is suitable for a base resin for the polypropylene composition; and a process for the production thereof. The propylene composition comprises a propylene homopolymer and a propylene-ethylene copolymer, the intrinsic viscosity of the copolymer ([&eegr;]RC) is in the range of 1.7 to 2.8 dl/g, the intrinsic viscosity ratio of the homopolymer to the copolymer ([&eegr;]RC/[&eegr;]pp) is in the range of 0.7 to 1.2 and a product [(WPP/WRC)×([&eegr;]RC/[&eegr;]pp)] of the weight ratio (WPP/WRC) of the homopolymer to the copolymer and the intrinsic viscosity ratio thereof is in the range of 1.0 to 3.0.
摘要翻译：用于生产成型性，成型时的成型收缩率，刚性，柔软性，耐冲击性，特别是低温耐冲击性，透明性，光泽，耐应力增白性及其余量的各种成型品的聚丙烯组合物 ; 具有上述特性的各种成型品; 适用于聚丙烯组合物的基础树脂的丙烯组合物; 及其生产方法。丙烯组合物包含丙烯均聚物和丙烯 - 乙烯共聚物，共聚物的特性粘度（ηRC）在1.7至2.8dl / g的范围内，均聚物与共聚物的特性粘度比（[ ηWP /ηpp）在0.7至1.2的范围内，并且产物[（WPP / WRC）x（ηRC /ηpp）]的重量比（WPP / WRC）共聚物的均聚物和其特性粘度比在1.0〜3.0的范围内。

8. 外观设计

USD437205S1 Shower curtain spacer 失效
标题翻译：淋浴间隔垫
公开(公告)号：USD437205S1
公开(公告)日：2001-02-06
申请号：US29124464
申请日：2000-06-06
申请人： Yasuhiro Mochizuki
设计人： Yasuhiro Mochizuki

9. 发明授权

US5627387A Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same 失效
标题翻译：过电压自保护半导体器件，其制造方法和使用其的半导体电路
公开(公告)号：US5627387A
公开(公告)日：1997-05-06
申请号：US396259
申请日：1995-03-01
申请人： Susumu Murakami , Yoshiteru Shimizu , Takeshi Yokota , Yasuhiro Mochizuki
发明人： Susumu Murakami , Yoshiteru Shimizu , Takeshi Yokota , Yasuhiro Mochizuki
IPC分类号： H01L29/74 , H01L29/06 , H01L29/861 , H01L29/87
CPC分类号： H01L29/0626 , H01L29/7424 , H01L29/7428 , H01L29/87
摘要： A novel semiconductor device with a pair of main surfaces is disclosed, in which at least three semiconductor layers are formed adjacently to each other. The device comprises a main thyristor portion for supplying a main current, an auxiliary thyristor portion, a pilot thyristor portion and a breakover portion. The breakover portion, in turn, includes a semiconductor layer having a high impurities concentration formed on one of the main surfaces, and a plurality of semiconductor layers having a high impurities concentration of opposite conduction type formed adjacently to the semiconductor layer and in spaced relationship from each other.
摘要翻译：公开了一种具有一对主表面的新型半导体器件，其中至少三个半导体层彼此相邻地形成。该装置包括用于提供主电流的主晶闸管部分，辅助晶闸管部分，先导晶闸管部分和突破部分。折叠部分又包括在主表面之一上形成的具有高杂质浓度的半导体层，以及与半导体层相邻形成的具有相反导电类型的高杂质浓度的多个半导体层，彼此。

10. 发明授权

US5294811A Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device 失效
标题翻译：具有反交错结构的薄膜半导体器件，以及具有这种半导体器件的器件
公开(公告)号：US5294811A
公开(公告)日：1994-03-15
申请号：US801350
申请日：1991-12-02
申请人： Takashi Aoyama , Kazuhiro Ogawa , Yasuhiro Mochizuki , Naohiro Momma , Katsuhisa Usami
发明人： Takashi Aoyama , Kazuhiro Ogawa , Yasuhiro Mochizuki , Naohiro Momma , Katsuhisa Usami
IPC分类号： H01L27/12 , H01L29/45 , H01L29/786 , H01L29/04 , H01L27/01 , H01L31/036
CPC分类号： H01L27/12 , H01L29/458 , H01L29/78669 , H01L29/78678
摘要： TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.
摘要翻译：根据本发明如下制造具有反交错结构的TFT：将沉积非晶硅（a-Si）后的玻璃基板转移到保持在非氧化环境中的激光退火室，并且设置有样品保持器和基板加热机构。将基板固定在样品保持器上，然后在从玻璃基板侧加热的同时进行激光退火，从而生长出具有显着改善的结晶度的多晶硅，其中进一步沉积a-Si。根据本发明的这个方法，能够在衬底周围形成具有较高迁移率和较小漏电流的TFT，并且几乎不改变构成像素的传统TFT的工艺和器件结构，以及外围驱动电路甚至能够集成在显示基板中。

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