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1. 发明申请

US20080176008A1 Apparatus and method for forming magnetic film 审中-公开
标题翻译：用于形成磁性膜的设备和方法
公开(公告)号：US20080176008A1
公开(公告)日：2008-07-24
申请号：US12010181
申请日：2008-01-22
申请人： Xinming Wang , Akira Owatari , Takashi Koba , Tsutomu Nakada , Akira Fukuda
发明人： Xinming Wang , Akira Owatari , Takashi Koba , Tsutomu Nakada , Akira Fukuda
IPC分类号： H01F10/08
CPC分类号： H01F41/24 , C23C18/161 , C23C18/1673 , C23C18/1879 , C23C18/36
摘要： A magnetic film forming apparatus can form a magnetic film, especially a magnetic alloy film, selectively on a metal surface exposed on a surface of a substrate, such as a semiconductor wafer. The magnetic film forming apparatus comprises an electroless plating apparatus having a magnetic field generation apparatus for generating a magnetic field around and parallel to a substrate disposed such that the surface of the substrate is in contact with a plating solution in a plating tank.
摘要翻译：磁性膜形成装置可以在暴露在诸如半导体晶片的基板的表面上的金属表面上选择性地形成磁性膜，特别是磁性合金膜。磁性膜形成装置包括具有磁场产生装置的化学镀设备，用于产生围绕并平行于基板的磁场，该基板设置成使得基板的表面与电镀槽中的镀液接触。

2. 发明授权

US09556533B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US09556533B2
公开(公告)日：2017-01-31
申请号：US13572924
申请日：2012-08-13
申请人： Keiichi Kurashina , Tsutomu Nakada
发明人： Keiichi Kurashina , Tsutomu Nakada
IPC分类号： C25D5/08 , C25D7/12 , C25D17/02 , H01L21/288 , H01L21/768
CPC分类号： C25D17/02 , C25D5/08 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L21/76879
摘要： A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.
摘要翻译：基板处理装置包括多个入口管和多个出口管，连接到处理槽并被配置为在其之间切换，以在处理槽中产生与处理液不同的方向的处理液流在切换之前。入口管和出口管各自设置有由控制部控制的流量控制装置，使得在切换时流过的处理液的流量随时间而变化。

3. 发明申请

US20090020434A1 Substrate processing method and substrate processing apparatus 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20090020434A1
公开(公告)日：2009-01-22
申请号：US12216224
申请日：2008-07-01
申请人： Akira Susaki , Tsutomu Nakada , Satoru Yamamoto , Keiichi Kurashina , Hiroyuki Kanda
发明人： Akira Susaki , Tsutomu Nakada , Satoru Yamamoto , Keiichi Kurashina , Hiroyuki Kanda
IPC分类号： C25D3/58 , C25D3/38 , C25D17/00
CPC分类号： C25D3/38 , C25D5/10 , C25D5/34 , C25D17/001 , C25D21/00 , C25D21/12 , H01L21/2885 , H01L21/67005 , H01L21/67051 , H01L21/6715 , H01L21/68728 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A substrate processing method makes it possible to fill interconnect recesses, such as trenches, with a defect-free interconnect material by carrying out electroplating directly on a surface of a ruthenium film as a barrier layer. The substrate processing method comprises: providing a substrate having interconnect recesses formed in a substrate surface and having a ruthenium film formed in the entire substrate surface including interior surfaces of the interconnect recesses; keeping the substrate surface in contact with a plating solution for a predetermined time to adsorb an additive in the plating solution onto the ruthenium film, and then carrying out electroplating to form a conductive film on a surface of the ruthenium film.
摘要翻译：基板处理方法可以通过在作为阻挡层的钌膜的表面上直接进行电镀而用无缺陷的互连材料填充诸如沟槽的互连凹槽。基板处理方法包括：提供具有形成在基板表面中的互连凹槽并且在包括互连凹槽的内表面的整个基板表面中形成的钌膜的基板; 保持基板表面与电镀液接触预定的时间，以将镀液中的添加剂吸附到钌膜上，然后进行电镀以在钌膜的表面上形成导电膜。

4. 发明申请

US20080029398A1 Electroplating apparatus and electroplating method 有权
标题翻译：电镀设备和电镀方法
公开(公告)号：US20080029398A1
公开(公告)日：2008-02-07
申请号：US11708548
申请日：2007-02-21
申请人： Satoru Yamamoto , Keiichi Kurashina , Takashi Kawakami , Tsutomu Nakada , Hiroyuki Kanda , Junji Kunisawa , Kunihito Ide
发明人： Satoru Yamamoto , Keiichi Kurashina , Takashi Kawakami , Tsutomu Nakada , Hiroyuki Kanda , Junji Kunisawa , Kunihito Ide
IPC分类号： C25D5/00 , C25D17/00
CPC分类号： C25D17/001 , C25D5/18 , C25D7/123 , C25D17/004 , C25D17/008 , C25D17/12 , H01L21/6723
摘要： An electroplating apparatus can form a plated film having a more uniform thickness and good film quality over an entire surface of a substrate having a conductive layer (seed layer) whose resistivity is equal to or higher than that of copper. The electroplating apparatus includes: a substrate holder for holding a substrate; a sealing member for contact with a peripheral portion of a surface of a substrate, held by the substrate holder, to seal the peripheral portion; a cathode contact for contact with a conductive layer formed in the surface of the substrate, held by the substrate holder, to feed electricity to the conductive layer; and a housing having therein an anode to be immersed in a plating solution, and a porous structure disposed at an open end facing the substrate held by the substrate holder, said porous structure defining a plating chamber in the housing; wherein the plating chamber is divided into rooms by a partition plate and the porous structure, and the anode is comprised of a plurality of divided anodes, each divided anode being disposed in each room of the plating chamber so that each divided anode can pass an independent plating current.
摘要翻译：电镀装置可以在具有等于或高于铜的导电层（种子层）的基板的整个表面上形成具有更均匀的厚度和更好的膜质量的镀膜。电镀装置包括：用于保持基板的基板保持件; 密封构件，其与由所述基板保持件保持的基板的表面的周边部接触，以密封所述周边部; 阴极接触件，用于与由衬底保持器保持的衬底表面中形成的导电层接触，以将电力馈送到导电层; 以及壳体，其中具有要浸入电镀溶液中的阳极，以及设置在面向由所述基板保持件保持的所述基板的开口端的多孔结构，所述多孔结构在所述壳体中限定电镀室; 其特征在于，通过分隔板和多孔结构将电镀室分为室，阳极由多个分开的阳极组成，每个分隔的阳极设置在电镀室的每个房间中，使得每个分隔的阳极可以通过独立的电镀电流。

5. 发明申请

US20060234499A1 Substrate processing method and substrate processing apparatus 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20060234499A1
公开(公告)日：2006-10-19
申请号：US11389178
申请日：2006-03-27
申请人： Akira Kodera , Hirokuni Hiyama , Akio Shibata , Tsutomu Nakada , Tsuyoshi Sahoda
发明人： Akira Kodera , Hirokuni Hiyama , Akio Shibata , Tsutomu Nakada , Tsuyoshi Sahoda
IPC分类号： H01L21/4763 , H01L21/76
CPC分类号： H01L21/2885 , B82Y30/00 , C23C14/04 , C23C14/225 , C25D5/022 , C25D7/123 , C25D17/001 , C25F1/00 , H01L21/76879
摘要： A substrate processing method forms a plated film which is thin and has a high flatness by covering the surface (outermost surface) of a substrate, excluding interior surfaces of recesses such as trenches, with a plating inhibiting material such as an SAM-forming molecular species. The substrate processing method comprises: preparing a substrate having recesses formed in a surface; attaching a plating inhibiting material for inhibiting plating to an outermost surface, which excludes interior surfaces of the recesses, of the substrate surface; and then carrying out electroplating of the surface of the substrate, thereby filling the recesses with a plated metal.
摘要翻译：基板处理方法通过用诸如形成SAM的分子种类的镀覆抑制材料覆盖基板的表面（最外表面）（不包括沟槽等凹陷的内表面）形成薄并且具有高平坦度的电镀膜。基板处理方法包括：准备在表面形成的凹部的基板; 将用于抑制电镀的镀敷抑制材料附着到不包括所述凹部的内表面的最外表面上; 然后进行基板的表面的电镀，从而用电镀金属填充凹部。

6. 发明申请

US20060081478A1 Plating apparatus and plating method 审中-公开
标题翻译：电镀装置及电镀方法
公开(公告)号：US20060081478A1
公开(公告)日：2006-04-20
申请号：US11251799
申请日：2005-10-18
申请人： Tsuyoshi Sahoda , Tsutomu Nakada , Nobutoshi Saito , Junichiro Yoshioka , Fumio Kuriyama , Masunobu Onozawa
发明人： Tsuyoshi Sahoda , Tsutomu Nakada , Nobutoshi Saito , Junichiro Yoshioka , Fumio Kuriyama , Masunobu Onozawa
IPC分类号： C25D5/20 , C25D17/00 , C25B9/00
CPC分类号： H01L21/76877 , C25D5/08 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/02 , C25D21/10 , H01L21/288 , H01L21/2885 , H01L21/76849 , H01L23/53238 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04953
摘要： A plating apparatus employs a dipping method with good gas-bubble releasability and, by regulating the flow of plating solution in a plating tank, can enhance the in-plane uniformity of a thickness of a plated film. The plating apparatus includes a plating tank for holding a plating solution, a plating solution jet nozzle having a slit-like plating solution jet orifice for jetting the plating solution toward a surface to be plated of an object to be plated disposed in the plating tank, and a plating solution supply section for supplying the plating solution to the plating solution jet nozzle.
摘要翻译：电镀装置采用具有良好的气泡剥离性的浸渍方法，并且通过调节电镀槽中的电镀液的流动，可以提高镀膜厚度的面内均匀性。电镀装置包括用于保持电镀液的电镀槽，具有狭缝状电镀液喷射孔的电镀液喷射喷嘴，用于将电镀液朝向被镀设置在电镀槽内的被镀物体的表面喷射，以及用于将电镀液供给到电镀液喷嘴的电镀液供给部。

7. 发明授权

US06488774B1 Trap apparatus 失效
标题翻译：陷阱装置
公开(公告)号：US06488774B1
公开(公告)日：2002-12-03
申请号：US09512333
申请日：2000-02-24
申请人： Kuniaki Horie , Masahito Abe , Tsutomu Nakada , Yuji Araki
发明人： Kuniaki Horie , Masahito Abe , Tsutomu Nakada , Yuji Araki
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , B01D5/0027 , B01D8/00 , Y02C20/30
摘要： A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.
摘要翻译：捕集装置最适于捕获从气相沉积装置排出的材料气体，用于沉积在基底上的高电介质或铁电体如钡/锶钛酸盐的气相薄膜中。捕集装置设置在真空处理室的下游。真空处理室用于处理基板。捕集装置用于捕获从真空处理室排出的气体中所含的具有低蒸气压的部件。捕集装置包括用于引入从真空处理室排出的气体的捕集容器和设置在捕集容器中的冷却装置，用于将气体冷却至等于或低于气体成分的冷凝温度的温度气体容易液化。

8. 发明授权

US06269221B1 Liquid feed vaporization system and gas injection device 失效
公开(公告)号：US06269221B1
公开(公告)日：2001-07-31
申请号：US09662897
申请日：2000-09-15
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
IPC分类号： F22B2906
CPC分类号： C23C16/45565 , C23C16/448 , C23C16/45561 , C23C16/4557
摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

9. 外观设计

USD417688S Electronic organ 失效
公开(公告)号：USD417688S
公开(公告)日：1999-12-14
申请号：US084375
申请日：1998-03-02
申请人： Tsutomu Nakada
设计人： Tsutomu Nakada

10. 发明授权

US5723496A Method for prevention and treatment of harmful effects of intracellular acidosis 失效
标题翻译：预防和治疗细胞内酸中毒有害作用的方法
公开(公告)号：US5723496A
公开(公告)日：1998-03-03
申请号：US404938
申请日：1995-03-15
申请人： Tsutomu Nakada
发明人： Tsutomu Nakada
IPC分类号： A61K31/00 , A61K31/185 , A61K31/495 , A61K31/5375 , A01N37/52
CPC分类号： A61K31/5375 , A61K31/00 , A61K31/185 , A61K31/495
摘要： Compounds and a method useful for protection of tissue cells in a mammalian body from irreversible damages due to lactic acidosis caused by oxygen deficiency. The protection is achieved by administering a compound having a cell membrane permeability and/or ability to cross the blood brain barrier, said compound being able to provide a buffering action to prevent an increase in a hydrogen ion concentration over the physiologically acceptable levels or able to shift the intracellular pH to a more desired alkaline level.
摘要翻译：用于保护哺乳动物体内的组织细胞的化合物和方法免受由于缺氧导致的乳酸性酸中毒引起的不可逆损伤。通过施用具有细胞膜通透性和/或穿过血脑屏障的能力的化合物来实现保护，所述化合物能够提供缓冲作用以防止氢离子浓度在生理学上可接受的水平上升或能够将细胞内pH转变为更期望的碱性水平。

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