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1. 发明申请

US20050072683A1 Copper plating bath and plating method 审中-公开
标题翻译：镀铜浴和电镀方法
公开(公告)号：US20050072683A1
公开(公告)日：2005-04-07
申请号：US10816168
申请日：2004-04-02
申请人： Tsutomu Nakada , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
发明人： Tsutomu Nakada , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
IPC分类号： C25D3/38 , C25D5/18 , H05K3/42
CPC分类号： C25D3/38 , C25D5/18 , H05K3/423
摘要： An acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, a high molecular weight surfactant that controls the electrodeposition reaction, and a sulfur-containing saturated organic compound that promotes the electrocoating rate. The high molecular weight surfactant comprises two or more types of surfactants with different hydrophobicities. The plating solution is used for forming a plating film on a conductor layer.
摘要翻译：酸性铜电镀液包含铜离子，有机酸或无机酸，氯离子，控制电沉积反应的高分子量表面活性剂，以及促进电泳率的含硫饱和有机化合物。高分子量表面活性剂包含两种或多种具有不同疏水性的表面活性剂。电镀液用于在导体层上形成镀膜。

2. 发明申请

US20050045486A1 Plating method and plating solution 审中-公开
标题翻译：电镀方法和镀液
公开(公告)号：US20050045486A1
公开(公告)日：2005-03-03
申请号：US10885136
申请日：2004-07-07
申请人： Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima , Ryoichi Kimizuka
发明人： Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima , Ryoichi Kimizuka
IPC分类号： C25D3/38 , C25D5/02 , C25D7/12 , H01L21/288 , H01L21/445 , H01L21/768 , H05K3/18 , H05K3/42
CPC分类号： H05K3/423 , C25D3/38 , H01L21/2885 , H01L21/76877
摘要： The present invention provides a plating method which can embed copper in interconnect recesses, such as vias and interconnect trenches, having an opening width or size of several tens of μm and an aspect ratio of at least 1.5. The plating method comprises: providing a substrate having interconnect recesses, whose surfaces are covered with a conductive layer, formed in a surface of the substrate; bringing the surface of the substrate into contact with a plating solution containing copper ions, an organic or inorganic acid, chloride ions, a polymeric surfactant for suppressing electrodeposition, a sulfur-containing saturated organic compound for promoting the growth of a plated film, and a nitrogen-containing polymer for flattening a surface of the plated film; and applying a voltage between the conductive layer and an anode immersed in the plating solution.
摘要翻译：本发明提供一种电镀方法，其可以将铜嵌入诸如通路和互连沟槽的互连凹槽中，其具有几十个开口宽度或尺寸，并且纵横比至少为1.5。电镀方法包括：提供具有互连凹槽的基板，其表面被形成在基板的表面中的导电层覆盖; 使基板的表面与含有铜离子，有机或无机酸，氯离子的电镀溶液，用于抑制电沉积的聚合物表面活性剂接触，用于促进镀膜生长的含硫饱和有机化合物，以及用于使镀膜表面变平的含氮聚合物; 以及在所述导电层和浸在所述电镀液中的阳极之间施加电压。

3. 发明授权

US06413392B1 Sputtering device 有权
标题翻译：溅射装置
公开(公告)号：US06413392B1
公开(公告)日：2002-07-02
申请号：US09599531
申请日：2000-06-23
申请人： Tsuyoshi Sahoda , Toshimitsu Uehigashi , Yasushi Higuchi , Kuniaki Nakajima , Tomoyasu Kondo
发明人： Tsuyoshi Sahoda , Toshimitsu Uehigashi , Yasushi Higuchi , Kuniaki Nakajima , Tomoyasu Kondo
IPC分类号： C23C1435
CPC分类号： H01J37/3423 , C23C14/35 , C23C14/564 , H01J37/3405
摘要： A sputtering device that efficiently guides sputtering particles ejected from a target to a film deposition subject and prolongs the interval at which a stick preventive member requires replacement. The sputtering device 1 has a vacuum chamber in which a specified sputtering target is placed so as to face a substrate 4 that is also placed in the vacuum chamber 2, and deposits a film on a surface of the substrate 4 using sputtering particles 20 ejected from the sputtering target 6; and particle ejection sections 60 constructed so as to slope at a specified angle of 30° to 60° with respect to the surface of the substrate 4, and respectively facing each other in the shape of a funnel are provided on the sputtering target 6. Lines of magnetic force 13 run from an N pole of a magnet 7a arranged at a rear surface of the target 6 to an S pole of a magnet 7b arranged around the target 6.
摘要翻译：一种溅射装置，其有效地将从目标喷射的溅射粒子引导到成膜物体，并延长棒状防止构件需要更换的间隔。溅射装置1具有真空室，其中放置指定的溅射靶以面对也放置在真空室2中的基板4，并且使用从基板4喷射的溅射颗粒20将膜沉积在基板4的表面上溅射靶6; 并且在溅射靶6上设置有以相对于基板4的表面相对于基板4的表面相对于彼此面对的方式倾斜成特定角度的颗粒喷射部60。的磁力13从设置在目标6的后表面的磁体7a的N极延伸到布置在目标6周围的磁体7b的S极。

4. 发明申请

US20060234499A1 Substrate processing method and substrate processing apparatus 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20060234499A1
公开(公告)日：2006-10-19
申请号：US11389178
申请日：2006-03-27
申请人： Akira Kodera , Hirokuni Hiyama , Akio Shibata , Tsutomu Nakada , Tsuyoshi Sahoda
发明人： Akira Kodera , Hirokuni Hiyama , Akio Shibata , Tsutomu Nakada , Tsuyoshi Sahoda
IPC分类号： H01L21/4763 , H01L21/76
CPC分类号： H01L21/2885 , B82Y30/00 , C23C14/04 , C23C14/225 , C25D5/022 , C25D7/123 , C25D17/001 , C25F1/00 , H01L21/76879
摘要： A substrate processing method forms a plated film which is thin and has a high flatness by covering the surface (outermost surface) of a substrate, excluding interior surfaces of recesses such as trenches, with a plating inhibiting material such as an SAM-forming molecular species. The substrate processing method comprises: preparing a substrate having recesses formed in a surface; attaching a plating inhibiting material for inhibiting plating to an outermost surface, which excludes interior surfaces of the recesses, of the substrate surface; and then carrying out electroplating of the surface of the substrate, thereby filling the recesses with a plated metal.
摘要翻译：基板处理方法通过用诸如形成SAM的分子种类的镀覆抑制材料覆盖基板的表面（最外表面）（不包括沟槽等凹陷的内表面）形成薄并且具有高平坦度的电镀膜。基板处理方法包括：准备在表面形成的凹部的基板; 将用于抑制电镀的镀敷抑制材料附着到不包括所述凹部的内表面的最外表面上; 然后进行基板的表面的电镀，从而用电镀金属填充凹部。

5. 发明申请

US20060081478A1 Plating apparatus and plating method 审中-公开
标题翻译：电镀装置及电镀方法
公开(公告)号：US20060081478A1
公开(公告)日：2006-04-20
申请号：US11251799
申请日：2005-10-18
申请人： Tsuyoshi Sahoda , Tsutomu Nakada , Nobutoshi Saito , Junichiro Yoshioka , Fumio Kuriyama , Masunobu Onozawa
发明人： Tsuyoshi Sahoda , Tsutomu Nakada , Nobutoshi Saito , Junichiro Yoshioka , Fumio Kuriyama , Masunobu Onozawa
IPC分类号： C25D5/20 , C25D17/00 , C25B9/00
CPC分类号： H01L21/76877 , C25D5/08 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/02 , C25D21/10 , H01L21/288 , H01L21/2885 , H01L21/76849 , H01L23/53238 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04953
摘要： A plating apparatus employs a dipping method with good gas-bubble releasability and, by regulating the flow of plating solution in a plating tank, can enhance the in-plane uniformity of a thickness of a plated film. The plating apparatus includes a plating tank for holding a plating solution, a plating solution jet nozzle having a slit-like plating solution jet orifice for jetting the plating solution toward a surface to be plated of an object to be plated disposed in the plating tank, and a plating solution supply section for supplying the plating solution to the plating solution jet nozzle.
摘要翻译：电镀装置采用具有良好的气泡剥离性的浸渍方法，并且通过调节电镀槽中的电镀液的流动，可以提高镀膜厚度的面内均匀性。电镀装置包括用于保持电镀液的电镀槽，具有狭缝状电镀液喷射孔的电镀液喷射喷嘴，用于将电镀液朝向被镀设置在电镀槽内的被镀物体的表面喷射，以及用于将电镀液供给到电镀液喷嘴的电镀液供给部。

6. 发明申请

US20080264798A1 Copper Plating Bath and Plating Method 审中-公开
公开(公告)号：US20080264798A1
公开(公告)日：2008-10-30
申请号：US12139051
申请日：2008-06-13
申请人： Tsutomu NAKADA , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
发明人： Tsutomu NAKADA , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D5/18 , H05K3/423
摘要： An acid copper plating solution and plating method are disclosed. The acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, high molecular weight surfactant which controls the electrodeposition reaction, and a sulfur-containing saturated organic compound which promotes the electrocoating rate, wherein the high molecular weight surfactant comprises two or more types with different hydrophobicities. The plating method is a method for forming a plating film on a conductor layer, which is formed on at least a part of a structural object having a concave-convex pattern on a semiconductor substrate, and comprises providing a cathode potential to the conductor layer and supplying a plating solution which electrically connects an anode with the conductor layer, wherein the plating solution contains 25-75 g/l of copper ion and 0.4 mol/l of an organic acid or inorganic acid and an electric resistor is installed between the conductor layer and the anode. Also disclosed is a plating method for forming a wiring circuit on an electronic circuit substrate having fine holes and trenches, comprising forming a plating film on a conductor layer, which is formed on at least a part of the substrate, and filling the holes and trenches with copper, wherein the plating film is formed by using an acid copper plating solution containing copper ions, organic or inorganic acid, chloride ions, sulfur-containing saturated organic compound, and high molecular weight surfactant controlling electrocoating concentration of 500 ppm or more.The acid copper plating solution and the plating methods are extremely useful as a technology for plating the surface of wafers, which are semiconductor materials, particularly for forming circuit patterns having submicron-level trenches on electronic circuit substrates such as wafers, semi-conductor substrates, or printed boards by using metal plating such as copper plating and can therefore be used with advantage for manufacturing next generation electronic circuit boards with an increasing density of wiring circuits.

7. 发明申请

US20050245080A1 Method and apparatus for processing substrate 有权
标题翻译：处理基板的方法和装置
公开(公告)号：US20050245080A1
公开(公告)日：2005-11-03
申请号：US11039967
申请日：2005-01-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
IPC分类号： C23C18/16 , C23C18/18 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/02068 , C23C18/1632 , C23C18/1689 , C23C18/1844 , H01L21/02074 , H01L21/288 , H01L21/67028 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要翻译：基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

8. 发明申请

US20050208201A1 Method and apparatus for determining the concentrations of additives in a plating solution 审中-公开
标题翻译：用于测定电镀溶液中添加剂浓度的方法和装置
公开(公告)号：US20050208201A1
公开(公告)日：2005-09-22
申请号：US10980321
申请日：2004-11-04
申请人： Makoto Kubota , Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima
发明人： Makoto Kubota , Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima
IPC分类号： B05C11/00 , B05D1/00 , C25D21/14 , G01N27/48
CPC分类号： C25D21/14 , G01N27/48
摘要： This invention is a method of determining the concentration of any organic additive in a copper sulfate plating solution by using a cyclic voltammetric technique, comprising immersing a measuring probe in a copper sulfate plating solution not containing any organic additive and performing a plurality of times of potential sweeping prior to the analysis of any sample copper sulfate plating solution containing an organic additive. This invention is also a plating solution control system having a tank for preparing a plating solution, a station for determining the concentration of a surface active agent, a station for supplying a surface active agent and a control station, the station for determining the concentration of a surface active agent measuring the concentration of the surface active agent in a plating solution in the tank for preparing a plating solution.
摘要翻译：本发明是通过使用循环伏安法测定硫酸铜电镀溶液中的任何有机添加剂的浓度的方法，包括将测量探针浸入不含任何有机添加剂的硫酸铜电镀溶液中并执行多次电位在对含有有机添加剂的任何样品硫酸铜电镀溶液进行分析前进行扫描。本发明也是一种电镀液控制系统，具有用于制备电镀溶液的槽，用于确定表面活性剂的浓度的站，用于供应表面活性剂的站和控制站的电镀液控制系统，表面活性剂，其测量用于制备电镀溶液的罐中的电镀溶液中的表面活性剂的浓度。

9. 发明授权

US06800188B2 Copper plating bath and plating method for substrate using the copper plating bath 有权
标题翻译：使用镀铜浴的镀铜浴和电镀方法
公开(公告)号：US06800188B2
公开(公告)日：2004-10-05
申请号：US10140882
申请日：2002-05-09
申请人： Hideki Hagiwara , Ryoichi Kimizuka , Yoshitaka Terashima , Megumi Maruyama , Takashi Miyake , Hiroshi Nagasawa , Tsuyoshi Sahoda , Seiji Iimura
发明人： Hideki Hagiwara , Ryoichi Kimizuka , Yoshitaka Terashima , Megumi Maruyama , Takashi Miyake , Hiroshi Nagasawa , Tsuyoshi Sahoda , Seiji Iimura
IPC分类号： C25D340
CPC分类号： C25D3/38 , H05K3/423
摘要： A copper plating bath comprising a reaction condensate of an amine compound and glycidyl ether and/or a quaternary ammonium derivative of this reaction condensate, and a plating method using this copper plating bath are disclosed. A copper plating bath capable of providing highly reliable copper plating on a substrate such as a silicone wafer semiconductor substrate or printed board having minute circuit patterns and small holes such as blind via-holes, through-holes, and the like, and a method of copper plating using the copper plating bath can be provided.
摘要翻译：公开了一种包含胺化合物和缩水甘油醚的反应缩合物和/或该反应冷凝物的季铵衍生物的镀铜浴和使用该镀铜浴的镀覆方法。能够在诸如硅胶晶片半导体基板或具有微小电路图案的印刷电路板和诸如盲孔，通孔等的小孔的基板上提供高可靠性镀铜的镀铜浴，以及可以提供使用镀铜浴的镀铜。

10. 发明授权

US07285492B2 Method for processing substrate 有权
标题翻译：基板处理方法
公开(公告)号：US07285492B2
公开(公告)日：2007-10-23
申请号：US11039967
申请日：2005-01-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
IPC分类号： H01L21/44
CPC分类号： H01L21/02068 , C23C18/1632 , C23C18/1689 , C23C18/1844 , H01L21/02074 , H01L21/288 , H01L21/67028 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要翻译：基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

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