专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130295759A1 Methods For Manufacturing Metal Gates 有权
标题翻译：制造金属门的方法
公开(公告)号：US20130295759A1
公开(公告)日：2013-11-07
申请号：US13865285
申请日：2013-04-18
申请人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
发明人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
IPC分类号： H01L29/66
CPC分类号： H01L29/66477 , H01L21/28088 , H01L21/3221 , H01L21/823821 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
摘要翻译：提供了适用于FinFET结构的金属栅极的方法。本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。可以首先沉积PMOS或NMOS。

2. 发明申请

US20140017408A1 Deposition Of N-Metal Films Comprising Aluminum Alloys 有权
标题翻译：包含铝合金的N-金属膜的沉积
公开(公告)号：US20140017408A1
公开(公告)日：2014-01-16
申请号：US13930194
申请日：2013-06-28
申请人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
发明人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
IPC分类号： C23C18/00
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

3. 发明申请

US20140112824A1 Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content 有权
标题翻译：包含铝含量高的铝合金薄膜的沉积
公开(公告)号：US20140112824A1
公开(公告)日：2014-04-24
申请号：US14058406
申请日：2013-10-21
申请人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
发明人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
IPC分类号： C23C16/12
CPC分类号： C23C16/30 , C23C16/45531 , C23C16/45534
摘要： Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.
摘要翻译：提供的是包含铝，碳和金属的膜，其中铝以大于约16％的元素含量和小于约50％的碳存在。还提供了沉积它们的方法。

4. 发明申请

US20130115383A1 DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS 有权
标题翻译：金属膜的沉积使用基于ALANE的前驱体
公开(公告)号：US20130115383A1
公开(公告)日：2013-05-09
申请号：US13669571
申请日：2012-11-06
申请人： Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
发明人： Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/06 , C23C16/45525 , H01L21/28562 , H01L21/76841
摘要： Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.
摘要翻译：提供沉积纯金属和铝合金金属膜的方法。某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基，并且第二前体包含金属卤化物。其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

5. 发明申请

US20130221445A1 Atomic Layer Deposition Methods For Metal Gate Electrodes 有权
标题翻译：金属栅电极的原子层沉积方法
公开(公告)号：US20130221445A1
公开(公告)日：2013-08-29
申请号：US13771236
申请日：2013-02-20
申请人： Yu Lei , Srinivas Gandikota , Xinyu Fu , Wei Tang , Atif Noori
发明人： Yu Lei , Srinivas Gandikota , Xinyu Fu , Wei Tang , Atif Noori
IPC分类号： H01L21/28 , H01L29/49
CPC分类号： H01L21/28008 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517
摘要： Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.
摘要翻译：提供了利用掺杂有Si，Al，Ga，Ge，In和/或Hf的TiN和/或TaN膜的器件和方法。这种膜可以用作高k电介质盖层，PMOS功函数层，铝屏障层和/或氟屏障。 TiNN，TaSiN，TiAlN，TaAlN，TiGaN，TaGaN，TiGeN，TaGeN，TiInN，TaInN，TiHfN或TaHfN膜可以用于传统上使用TiN和/或TaN膜的场合，或者它们可以与TiN和/ 或TaN。

6. 发明申请

US20130157460A1 METHODS FOR ANNEALING A METAL CONTACT LAYER TO FORM A METAL SILICIDATION LAYER 有权
标题翻译：用于退火金属接触层以形成金属硅酸盐层的方法
公开(公告)号：US20130157460A1
公开(公告)日：2013-06-20
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

7. 发明授权

US08927423B2 Methods for annealing a contact metal layer to form a metal silicidation layer 有权
标题翻译：退火接触金属层以形成金属硅化层的方法
公开(公告)号：US08927423B2
公开(公告)日：2015-01-06
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

8. 发明授权

US08448064B2 Webpage design system 失效
标题翻译：网页设计系统
公开(公告)号：US08448064B2
公开(公告)日：2013-05-21
申请号：US13110875
申请日：2011-05-18
申请人： Yao-Hua Liu , Shih-Fang Wong , Xin Lu , Chao Yang , Wei Tang
发明人： Yao-Hua Liu , Shih-Fang Wong , Xin Lu , Chao Yang , Wei Tang
IPC分类号： G06F17/00
CPC分类号： G06F17/21
摘要： The present disclosure provides a webpage design system including a storage and a processor. The storage stores a number of ActiveX controls, a number of ActiveX control description files each describing a corresponding one ActiveX control, and a number of modules. The modules include instructions executable by the processor to provide a webpage interface for a user to design a webpage. The webpage interface includes an ActiveX control option for the user to select at least one desired ActiveX control. The modules further include instructions executable by the processor to position the selected ActiveX control in a designed webpage under construction, provide a search interface for the user to input a description of a desired function, and search in the ActiveX control description files according to the description to determine whether at least one ActiveX control having the desired function exists in the storage.
摘要翻译：本公开提供了一种包括存储器和处理器的网页设计系统。存储器存储多个ActiveX控件，多个ActiveX控件描述文件，每个描述一个对应的一个ActiveX控件，以及多个模块。模块包括可由处理器执行的指令，以提供用于用户设计网页的网页界面。网页界面包括一个ActiveX控件选项供用户选择至少一个所需的ActiveX控件。模块还包括可由处理器执行的指令，用于将所选择的ActiveX控件定位在正在构造的设计网页中，为用户提供搜索界面以输入所需功能的描述，并根据描述搜索ActiveX控件描述文件以确定在存储器中是否存在具有期望功能的至少一个ActiveX控件。

9. 发明授权

US08401831B2 Methods for designing secondary cutting structures for a bottom hole assembly 有权
标题翻译：设计底孔组件的二次切割结构的方法
公开(公告)号：US08401831B2
公开(公告)日：2013-03-19
申请号：US12179516
申请日：2008-07-24
申请人： Wei Tang , Gordon Whipple , Sujian J. Huang , Navish Makkar , Tommy Laird , Gail Nelson
发明人： Wei Tang , Gordon Whipple , Sujian J. Huang , Navish Makkar , Tommy Laird , Gail Nelson
IPC分类号： G06G7/48
CPC分类号： G06F17/5086 , E21B10/00 , E21B10/43 , E21B10/54 , E21B17/1014 , E21B44/00 , E21B47/12
摘要： A method for designing a secondary cutting structure for use in a bottom hole assembly, the method including defining initial design parameters for the secondary cutting structure and analyzing forces acting on the secondary cutting structure. Additionally, the method includes modifying at least one design element of the secondary cutting structure and simulating an effect of the modifying on both the secondary cutting structure and a primary cutting structure to determine if an improved condition is met. Also, a method for designing a drilling tool assembly, the method including defining initial drilling tool assembly design parameters including a primary cutting structure and a secondary cutting structure, and simulating a dynamic response of the drilling tool assembly. Additionally, the method includes adjusting at least one design element of the secondary cutting structure based on the dynamic response of the drilling tool assembly, determining if the adjusted design element improved a condition of the drilling, and repeating the simulating and adjusting until the condition is optimized.
摘要翻译：一种用于设计用于底部孔组件的二次切割结构的方法，所述方法包括限定次切割结构的初始设计参数和分析作用在次切割结构上的力。此外，该方法包括修改次切割结构的至少一个设计元件并且模拟修正对次切割结构和主切割结构的影响，以确定是否满足改进的条件。另外，一种用于设计钻具组件的方法，所述方法包括限定初始钻具组合设计参数，包括主切割结构和次切割结构，以及模拟钻具组件的动态响应。此外，该方法包括基于钻具组件的动态响应来调整次切割结构的至少一个设计元件，确定调整后的设计元件是否改善了钻孔的状态，并重复模拟和调整，直到条件为优化。

10. 发明授权

US08247549B2 Method for preparing 4-(6-amino-purin-9-YL)-2(S)-hydroxy-butyric acid methyl ester 有权
标题翻译：制备4-（6-氨基嘌呤-9-YL）-2（S） - 羟基 - 丁酸甲酯的方法
公开(公告)号：US08247549B2
公开(公告)日：2012-08-21
申请号：US12747312
申请日：2008-11-06
申请人： Fajun Nan , Jianping Zuo , Yangming Zhang , Min Gu , Wei Tang
发明人： Fajun Nan , Jianping Zuo , Yangming Zhang , Min Gu , Wei Tang
IPC分类号： C07D473/34
CPC分类号： C07D473/34 , Y02P20/55
摘要： The present invention discloses a novel method for preparing and purifying 4-(6-Amino-purin-9-yl)-2(S)-hydroxy-butyric acid methyl ester. The preparation started from cheap and easily available L-malic acid, which was transformed to intermediate I after simultaneous protection of the groups of 1-carboxyl and 2-hydroxyl. The intermediate I was selectively reduced to intermediate alcohol II, whose hydroxyl group was further transformed to an easily leaving group to afford intermediate III. The intermediate III was nucleophilically substituted with adenine to afford intermediate IV. The intermediate IV was deprotected and methyl-esterified simultaneously in methanol in the presence of an acid or a base to afford crude 4-(6-Amino-purin-9-yl)-2(S)-hydroxy-butyric acid methyl ester, which was purified by recrystallization to afford the purified product. Comparing with the prior preparation methods, the present method has advantages in low cost, mild conditions, high retention of the chiral center during the reaction, high productivity, great improvement in the quality and yield of the product and great decrease in cost, and thus is suitable for the production on a large scale.
摘要翻译：本发明公开了一种制备和纯化4-（6-氨基嘌呤-9-基）-2（S） - 羟基 - 丁酸甲酯的新方法。该制剂从便宜且易于获得的L-苹果酸开始，其在同时保护1-羧基和2-羟基的基团后转化为中间体I. 将中间体I选择性还原成中间体醇II，其中羟基进一步转化为容易离去的基团，得到中间体III。中间体III被腺嘌呤亲核取代，得到中间体IV。将中间体IV在酸或碱的存在下在甲醇中同时脱甲基酯化，得到粗制的4-（6-氨基 - 嘌呤-9-基）-2（S） - 羟基 - 丁酸甲酯，通过重结晶纯化，得到纯化产物。与现有的制备方法相比，本发明方法具有成本低，条件温和，反应中手性中心保留性高，生产效率高，产品质量和产量大幅提高，成本大幅降低的优点，适合大规模生产。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式