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    • 2. 发明授权
    • Field-enhanced MIS/MIM electron emitters
    • 场增强MIS / MIM电子发射器
    • US06822380B2
    • 2004-11-23
    • US09975296
    • 2001-10-12
    • Xia ShengHenryk BireckiSi-Ty LamHuei-Pei KuoSteven Louis Naberhuis
    • Xia ShengHenryk BireckiSi-Ty LamHuei-Pei KuoSteven Louis Naberhuis
    • H01J1312
    • B82Y10/00H01J1/312
    • In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.
    • 在基于金属绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器中,场致发射结构被封装在发射极结构内。 电子发射器可以包括形成在导电衬底上的导电衬底和电子供给层。 电子供应层,例如未掺杂的多晶硅,在其表面上形成突起。 可以控制突起的清晰度和密度。 在电子供给层和突起之上,可以形成绝缘体,从而包围突起。 可以在绝缘体上方形成顶部导电层。 封闭的突起对真空污染相对不敏感。 绝缘体的薄度允许在低的施加电压下产生突起处的高强度电场。 电场增强注入绝缘体,从而通过顶​​层导电层注入电子。 此外,电子束分散和发散最小化。