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1. 发明授权

US06643248B2 Data storage device 有权
公开(公告)号：US06643248B2
公开(公告)日：2003-11-04
申请号：US09836124
申请日：2001-04-16
申请人： Steven L. Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki
发明人： Steven L. Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki
IPC分类号： G11B700
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/1418
摘要： The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

2. 发明授权

US06815875B2 Electron source having planar emission region and focusing structure 有权
标题翻译：具有平面发射区域和聚焦结构的电子源
公开(公告)号：US06815875B2
公开(公告)日：2004-11-09
申请号：US09795240
申请日：2001-02-27
申请人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
发明人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
IPC分类号： H01J102
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/1409 , H01J3/02 , H01J2201/308
摘要： An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

3. 发明授权

US07057997B2 Class of electron beam based data storage devices and methods of use thereof 失效
标题翻译：基于电子束的数据存储装置的类别及其使用方法
公开(公告)号：US07057997B2
公开(公告)日：2006-06-06
申请号：US10420746
申请日：2003-04-23
申请人： Henryk Birecki , Huei-Pei Kuo , Si-Ty Lam , Gary A. Gibson
发明人： Henryk Birecki , Huei-Pei Kuo , Si-Ty Lam , Gary A. Gibson
IPC分类号： G11B7/00
CPC分类号： G11B7/244 , B82Y10/00 , G11B7/245 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/149
摘要： An ultra-high-density data storage device that includes at least one energy beam emitter and a data storage medium that itself includes an organic material. The organic material may include one or more Langmuir-Blodgett layers and may include a conductive polymer. Localized presence or absence of localized disorder in the Langmuir-Blodgett layers may be used to detect data bits formed in the data storage medium. The presence or absence of one-dimensional conductivity in the organic material may also be used to read data bits formed in the data storage medium.
摘要翻译：一种超高密度数据存储设备，其包括至少一个能量束发射器和本身包括有机材料的数据存储介质。有机材料可以包括一个或多个Langmuir-Blodgett层，并且可以包括导电聚合物。 Langmuir-Blodgett层中本地化存在或不存在局部紊乱可用于检测在数据存储介质中形成的数据位。有机材料中存在或不存在一维电导率也可用于读取在数据存储介质中形成的数据位。

4. 发明申请

US20060151777A1 Multi-layer thin film in a ballistic electron emitter 审中-公开
标题翻译：弹道电子发射器中的多层薄膜
公开(公告)号：US20060151777A1
公开(公告)日：2006-07-13
申请号：US11033768
申请日：2005-01-12
申请人： Steven Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki , Xia Sheng
发明人： Steven Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki , Xia Sheng
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： An electron emitter that includes a metal film having a set of layers that are selected and arranged to adhere the metal film to a remainder of a structure of the electron emitter while avoiding electron loss in the metal film. A multiple layer metal film according to the present techniques enables a balance among adhesion properties, metal diffusion, and oxide properties that might otherwise hinder the performance of an electron emitter.
摘要翻译：一种电子发射器，其包括具有一组层的金属膜，所述层被选择并布置成将金属膜附着到电子发射体的其余部分，同时避免金属膜中的电子损失。根据本技术的多层金属膜能够在粘合性能，金属扩散性以及可能阻碍电子发射体性能的氧化物性质之间取得平衡。

5. 发明授权

US06960876B2 Electron emission devices 失效
标题翻译：电子发射装置
公开(公告)号：US06960876B2
公开(公告)日：2005-11-01
申请号：US10374101
申请日：2003-02-27
申请人： Huei-Pei Kuo , Si-Ty Lam , Sam Burriesci , Steven Louis Naberhuis , Henryk Birecki , Xia Sheng
发明人： Huei-Pei Kuo , Si-Ty Lam , Sam Burriesci , Steven Louis Naberhuis , Henryk Birecki , Xia Sheng
IPC分类号： H01J1/62 , H01J3/02 , H01J9/02 , H01J9/18 , H01J29/46
CPC分类号： H01J9/025 , H01J3/022 , H01J9/18 , H01J29/467 , H01J2237/0635 , Y10S977/939
摘要： An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.
摘要翻译：描述了具有纳米突起的电子发射装置。电子从纳米突起发射并被一个或多个导体引导成束。梁可以被成形为准直的，发散的或会聚的。来自一个或多个纳米突起的成形梁可以通过使用附加的电子光学器件聚焦到目标点上。

6. 发明申请

US20050051764A1 Anodizing process for improving electron emission in electronic devices 审中-公开
标题翻译：用于改善电子器件中电子发射的阳极氧化工艺
公开(公告)号：US20050051764A1
公开(公告)日：2005-03-10
申请号：US10656635
申请日：2003-09-04
申请人： Huei-Pei Kuo , Xia Sheng , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
发明人： Huei-Pei Kuo , Xia Sheng , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
IPC分类号： H01J1/312 , H01J9/02 , H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025
摘要： A method is presented for forming pores within a central area of a semi-conductive or conductive surface. The method includes forming a semi-conductive or conductive surface on a substrate. This semi-conductive or conductive surface is formed in a manner ensuring that upon application of an electric field at the semi-conductive or conductive surface an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. Finally, the method includes anodizing the semi-conductive or conductive surface by generating the electric field at the semi-conductive or conductive surface to form a porous region within the semi-conductive or conductive surface.
摘要翻译：提出了一种用于在半导体或导电表面的中心区域内形成孔的方法。该方法包括在衬底上形成半导体或导电表面。这种半导体或导电表面以确保在半导体或导电表面上施加电场的方式形成，表面中心区域处的电场的强度至少等于表面周边的电场。最后，该方法包括通过在半导体或导电表面处产生电场来在半导体或导电表面内形成多孔区域来阳极氧化半导体或导电表面。

7. 发明授权

US07208867B2 Focusing structure for electron source 有权
标题翻译：电子源聚焦结构
公开(公告)号：US07208867B2
公开(公告)日：2007-04-24
申请号：US10891277
申请日：2004-07-14
申请人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
发明人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
IPC分类号： H01J1/02
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/1409 , H01J3/02 , H01J2201/308
摘要： An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.
摘要翻译：电子源包括用于产生电子发射的平面发射区域和用于将电子发射聚焦成电子束的聚焦结构。

8. 发明申请

US20050001530A1 Electron source having planar emission region and focusing structure 有权
标题翻译：具有平面发射区域和聚焦结构的电子源
公开(公告)号：US20050001530A1
公开(公告)日：2005-01-06
申请号：US10891277
申请日：2004-07-14
申请人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
发明人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
IPC分类号： H01J1/312 , G11B9/00 , G11B9/10 , H01J3/02 , H01J3/18 , H01J1/02 , H01L29/06
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/1409 , H01J3/02 , H01J2201/308
摘要： An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.
摘要翻译：电子源包括用于产生电子发射的平面发射区域和用于将电子发射聚焦成电子束的聚焦结构。

9. 发明授权

US06822380B2 Field-enhanced MIS/MIM electron emitters 失效
标题翻译：场增强MIS / MIM电子发射器
公开(公告)号：US06822380B2
公开(公告)日：2004-11-23
申请号：US09975296
申请日：2001-10-12
申请人： Xia Sheng , Henryk Birecki , Si-Ty Lam , Huei-Pei Kuo , Steven Louis Naberhuis
发明人： Xia Sheng , Henryk Birecki , Si-Ty Lam , Huei-Pei Kuo , Steven Louis Naberhuis
IPC分类号： H01J1312
CPC分类号： B82Y10/00 , H01J1/312
摘要： In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.
摘要翻译：在基于金属绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器中，场致发射结构被封装在发射极结构内。电子发射器可以包括形成在导电衬底上的导电衬底和电子供给层。电子供应层，例如未掺杂的多晶硅，在其表面上形成突起。可以控制突起的清晰度和密度。在电子供给层和突起之上，可以形成绝缘体，从而包围突起。可以在绝缘体上方形成顶部导电层。封闭的突起对真空污染相对不敏感。绝缘体的薄度允许在低的施加电压下产生突起处的高强度电场。电场增强注入绝缘体，从而通过顶层导电层注入电子。此外，电子束分散和发散最小化。

10. 发明授权

US07477814B2 Method of making a louver device for a light guide screen 失效
标题翻译：制作光导屏幕的百叶窗装置的方法
公开(公告)号：US07477814B2
公开(公告)日：2009-01-13
申请号：US11052612
申请日：2005-02-07
申请人： Huei-Pei Kuo , Laurence Hubby , Steven L Naberhuis , Xia Sheng
发明人： Huei-Pei Kuo , Laurence Hubby , Steven L Naberhuis , Xia Sheng
IPC分类号： G02B6/00 , G03B21/56
CPC分类号： G03B21/62 , G02B5/045 , G02B6/0038 , G02B6/06 , H04N5/7408 , H04N9/3141
摘要： A method of making a louver device for a light guide screen. More specifically, in a specific embodiment, a transparent layer is provided. A plurality of similarly angled surfaces are established within the transparent layer. The angled surfaces are coated with a light-reflective material such that the coated surfaces define a plurality of light paths through the transparent layer.
摘要翻译：制造导光屏的百叶窗装置的方法。更具体地，在具体实施例中，提供透明层。在透明层内建立多个相似角度的表面。成角度的表面涂覆有光反射材料，使得涂覆的表面限定穿过透明层的多个光路。

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