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1. 发明授权

US06815875B2 Electron source having planar emission region and focusing structure 有权
标题翻译：具有平面发射区域和聚焦结构的电子源
公开(公告)号：US06815875B2
公开(公告)日：2004-11-09
申请号：US09795240
申请日：2001-02-27
申请人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
发明人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
IPC分类号： H01J102
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/1409 , H01J3/02 , H01J2201/308
摘要： An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

2. 发明授权

US06960876B2 Electron emission devices 失效
标题翻译：电子发射装置
公开(公告)号：US06960876B2
公开(公告)日：2005-11-01
申请号：US10374101
申请日：2003-02-27
申请人： Huei-Pei Kuo , Si-Ty Lam , Sam Burriesci , Steven Louis Naberhuis , Henryk Birecki , Xia Sheng
发明人： Huei-Pei Kuo , Si-Ty Lam , Sam Burriesci , Steven Louis Naberhuis , Henryk Birecki , Xia Sheng
IPC分类号： H01J1/62 , H01J3/02 , H01J9/02 , H01J9/18 , H01J29/46
CPC分类号： H01J9/025 , H01J3/022 , H01J9/18 , H01J29/467 , H01J2237/0635 , Y10S977/939
摘要： An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.
摘要翻译：描述了具有纳米突起的电子发射装置。电子从纳米突起发射并被一个或多个导体引导成束。梁可以被成形为准直的，发散的或会聚的。来自一个或多个纳米突起的成形梁可以通过使用附加的电子光学器件聚焦到目标点上。

3. 发明授权

US07208867B2 Focusing structure for electron source 有权
标题翻译：电子源聚焦结构
公开(公告)号：US07208867B2
公开(公告)日：2007-04-24
申请号：US10891277
申请日：2004-07-14
申请人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
发明人： Huei-Pei Kuo , Henryk Birecki , Si-Ty Lam , Steven Louis Naberhuis
IPC分类号： H01J1/02
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/1409 , H01J3/02 , H01J2201/308
摘要： An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.
摘要翻译：电子源包括用于产生电子发射的平面发射区域和用于将电子发射聚焦成电子束的聚焦结构。

4. 发明授权

US06822380B2 Field-enhanced MIS/MIM electron emitters 失效
标题翻译：场增强MIS / MIM电子发射器
公开(公告)号：US06822380B2
公开(公告)日：2004-11-23
申请号：US09975296
申请日：2001-10-12
申请人： Xia Sheng , Henryk Birecki , Si-Ty Lam , Huei-Pei Kuo , Steven Louis Naberhuis
发明人： Xia Sheng , Henryk Birecki , Si-Ty Lam , Huei-Pei Kuo , Steven Louis Naberhuis
IPC分类号： H01J1312
CPC分类号： B82Y10/00 , H01J1/312
摘要： In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.
摘要翻译：在基于金属绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器中，场致发射结构被封装在发射极结构内。电子发射器可以包括形成在导电衬底上的导电衬底和电子供给层。电子供应层，例如未掺杂的多晶硅，在其表面上形成突起。可以控制突起的清晰度和密度。在电子供给层和突起之上，可以形成绝缘体，从而包围突起。可以在绝缘体上方形成顶部导电层。封闭的突起对真空污染相对不敏感。绝缘体的薄度允许在低的施加电压下产生突起处的高强度电场。电场增强注入绝缘体，从而通过顶层导电层注入电子。此外，电子束分散和发散最小化。

5. 发明授权

US07057997B2 Class of electron beam based data storage devices and methods of use thereof 失效
标题翻译：基于电子束的数据存储装置的类别及其使用方法
公开(公告)号：US07057997B2
公开(公告)日：2006-06-06
申请号：US10420746
申请日：2003-04-23
申请人： Henryk Birecki , Huei-Pei Kuo , Si-Ty Lam , Gary A. Gibson
发明人： Henryk Birecki , Huei-Pei Kuo , Si-Ty Lam , Gary A. Gibson
IPC分类号： G11B7/00
CPC分类号： G11B7/244 , B82Y10/00 , G11B7/245 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/149
摘要： An ultra-high-density data storage device that includes at least one energy beam emitter and a data storage medium that itself includes an organic material. The organic material may include one or more Langmuir-Blodgett layers and may include a conductive polymer. Localized presence or absence of localized disorder in the Langmuir-Blodgett layers may be used to detect data bits formed in the data storage medium. The presence or absence of one-dimensional conductivity in the organic material may also be used to read data bits formed in the data storage medium.
摘要翻译：一种超高密度数据存储设备，其包括至少一个能量束发射器和本身包括有机材料的数据存储介质。有机材料可以包括一个或多个Langmuir-Blodgett层，并且可以包括导电聚合物。 Langmuir-Blodgett层中本地化存在或不存在局部紊乱可用于检测在数据存储介质中形成的数据位。有机材料中存在或不存在一维电导率也可用于读取在数据存储介质中形成的数据位。

6. 发明申请

US20060151777A1 Multi-layer thin film in a ballistic electron emitter 审中-公开
标题翻译：弹道电子发射器中的多层薄膜
公开(公告)号：US20060151777A1
公开(公告)日：2006-07-13
申请号：US11033768
申请日：2005-01-12
申请人： Steven Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki , Xia Sheng
发明人： Steven Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki , Xia Sheng
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： An electron emitter that includes a metal film having a set of layers that are selected and arranged to adhere the metal film to a remainder of a structure of the electron emitter while avoiding electron loss in the metal film. A multiple layer metal film according to the present techniques enables a balance among adhesion properties, metal diffusion, and oxide properties that might otherwise hinder the performance of an electron emitter.
摘要翻译：一种电子发射器，其包括具有一组层的金属膜，所述层被选择并布置成将金属膜附着到电子发射体的其余部分，同时避免金属膜中的电子损失。根据本技术的多层金属膜能够在粘合性能，金属扩散性以及可能阻碍电子发射体性能的氧化物性质之间取得平衡。

7. 发明申请

US20050051764A1 Anodizing process for improving electron emission in electronic devices 审中-公开
标题翻译：用于改善电子器件中电子发射的阳极氧化工艺
公开(公告)号：US20050051764A1
公开(公告)日：2005-03-10
申请号：US10656635
申请日：2003-09-04
申请人： Huei-Pei Kuo , Xia Sheng , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
发明人： Huei-Pei Kuo , Xia Sheng , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
IPC分类号： H01J1/312 , H01J9/02 , H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025
摘要： A method is presented for forming pores within a central area of a semi-conductive or conductive surface. The method includes forming a semi-conductive or conductive surface on a substrate. This semi-conductive or conductive surface is formed in a manner ensuring that upon application of an electric field at the semi-conductive or conductive surface an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. Finally, the method includes anodizing the semi-conductive or conductive surface by generating the electric field at the semi-conductive or conductive surface to form a porous region within the semi-conductive or conductive surface.
摘要翻译：提出了一种用于在半导体或导电表面的中心区域内形成孔的方法。该方法包括在衬底上形成半导体或导电表面。这种半导体或导电表面以确保在半导体或导电表面上施加电场的方式形成，表面中心区域处的电场的强度至少等于表面周边的电场。最后，该方法包括通过在半导体或导电表面处产生电场来在半导体或导电表面内形成多孔区域来阳极氧化半导体或导电表面。

8. 发明授权

US06806630B2 Electron emitter device for data storage applications and method of manufacture 失效
公开(公告)号：US06806630B2
公开(公告)日：2004-10-19
申请号：US10042927
申请日：2002-01-09
申请人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
发明人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
IPC分类号： H01J114
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , H01J1/308
摘要： A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

9. 发明授权

US07585687B2 Electron emitter device for data storage applications and method of manufacture 失效
标题翻译：用于数据存储应用的电子发射器件和制造方法
公开(公告)号：US07585687B2
公开(公告)日：2009-09-08
申请号：US10932695
申请日：2004-09-01
申请人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
发明人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
IPC分类号： H01L21/66
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , H01J1/308
摘要： A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.
摘要翻译：公开了一种场致发射装置，其可以在超高密度存储系统内使用。发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射层。此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

10. 发明授权

US06864624B2 Electron emitter device for data storage applications 失效
标题翻译：用于数据存储应用的电子发射器件
公开(公告)号：US06864624B2
公开(公告)日：2005-03-08
申请号：US10697170
申请日：2003-10-30
申请人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
发明人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
IPC分类号： G11C11/42 , G11B9/00 , H01J1/304 , H01J1/308 , H01J9/02 , H01J1/14 , H01J1/16 , H01L21/76
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , H01J1/308
摘要： A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.
摘要翻译：公开了一种场致发射装置，其可以在超高密度存储系统内使用。发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射层。此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

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