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1. 发明授权

US06960876B2 Electron emission devices 失效
标题翻译：电子发射装置
公开(公告)号：US06960876B2
公开(公告)日：2005-11-01
申请号：US10374101
申请日：2003-02-27
申请人： Huei-Pei Kuo , Si-Ty Lam , Sam Burriesci , Steven Louis Naberhuis , Henryk Birecki , Xia Sheng
发明人： Huei-Pei Kuo , Si-Ty Lam , Sam Burriesci , Steven Louis Naberhuis , Henryk Birecki , Xia Sheng
IPC分类号： H01J1/62 , H01J3/02 , H01J9/02 , H01J9/18 , H01J29/46
CPC分类号： H01J9/025 , H01J3/022 , H01J9/18 , H01J29/467 , H01J2237/0635 , Y10S977/939
摘要： An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.
摘要翻译：描述了具有纳米突起的电子发射装置。电子从纳米突起发射并被一个或多个导体引导成束。梁可以被成形为准直的，发散的或会聚的。来自一个或多个纳米突起的成形梁可以通过使用附加的电子光学器件聚焦到目标点上。

2. 发明授权

US06822380B2 Field-enhanced MIS/MIM electron emitters 失效
标题翻译：场增强MIS / MIM电子发射器
公开(公告)号：US06822380B2
公开(公告)日：2004-11-23
申请号：US09975296
申请日：2001-10-12
申请人： Xia Sheng , Henryk Birecki , Si-Ty Lam , Huei-Pei Kuo , Steven Louis Naberhuis
发明人： Xia Sheng , Henryk Birecki , Si-Ty Lam , Huei-Pei Kuo , Steven Louis Naberhuis
IPC分类号： H01J1312
CPC分类号： B82Y10/00 , H01J1/312
摘要： In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.
摘要翻译：在基于金属绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器中，场致发射结构被封装在发射极结构内。电子发射器可以包括形成在导电衬底上的导电衬底和电子供给层。电子供应层，例如未掺杂的多晶硅，在其表面上形成突起。可以控制突起的清晰度和密度。在电子供给层和突起之上，可以形成绝缘体，从而包围突起。可以在绝缘体上方形成顶部导电层。封闭的突起对真空污染相对不敏感。绝缘体的薄度允许在低的施加电压下产生突起处的高强度电场。电场增强注入绝缘体，从而通过顶层导电层注入电子。此外，电子束分散和发散最小化。

3. 发明申请

US20060151777A1 Multi-layer thin film in a ballistic electron emitter 审中-公开
标题翻译：弹道电子发射器中的多层薄膜
公开(公告)号：US20060151777A1
公开(公告)日：2006-07-13
申请号：US11033768
申请日：2005-01-12
申请人： Steven Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki , Xia Sheng
发明人： Steven Naberhuis , Huei-Pei Kuo , Si-Ty Lam , Henryk Birecki , Xia Sheng
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： An electron emitter that includes a metal film having a set of layers that are selected and arranged to adhere the metal film to a remainder of a structure of the electron emitter while avoiding electron loss in the metal film. A multiple layer metal film according to the present techniques enables a balance among adhesion properties, metal diffusion, and oxide properties that might otherwise hinder the performance of an electron emitter.
摘要翻译：一种电子发射器，其包括具有一组层的金属膜，所述层被选择并布置成将金属膜附着到电子发射体的其余部分，同时避免金属膜中的电子损失。根据本技术的多层金属膜能够在粘合性能，金属扩散性以及可能阻碍电子发射体性能的氧化物性质之间取得平衡。

4. 发明申请

US20050051764A1 Anodizing process for improving electron emission in electronic devices 审中-公开
标题翻译：用于改善电子器件中电子发射的阳极氧化工艺
公开(公告)号：US20050051764A1
公开(公告)日：2005-03-10
申请号：US10656635
申请日：2003-09-04
申请人： Huei-Pei Kuo , Xia Sheng , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
发明人： Huei-Pei Kuo , Xia Sheng , Henryk Birecki , Si-Ty Lam , Steven Naberhuis
IPC分类号： H01J1/312 , H01J9/02 , H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025
摘要： A method is presented for forming pores within a central area of a semi-conductive or conductive surface. The method includes forming a semi-conductive or conductive surface on a substrate. This semi-conductive or conductive surface is formed in a manner ensuring that upon application of an electric field at the semi-conductive or conductive surface an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. Finally, the method includes anodizing the semi-conductive or conductive surface by generating the electric field at the semi-conductive or conductive surface to form a porous region within the semi-conductive or conductive surface.
摘要翻译：提出了一种用于在半导体或导电表面的中心区域内形成孔的方法。该方法包括在衬底上形成半导体或导电表面。这种半导体或导电表面以确保在半导体或导电表面上施加电场的方式形成，表面中心区域处的电场的强度至少等于表面周边的电场。最后，该方法包括通过在半导体或导电表面处产生电场来在半导体或导电表面内形成多孔区域来阳极氧化半导体或导电表面。

5. 发明授权

US07477814B2 Method of making a louver device for a light guide screen 失效
标题翻译：制作光导屏幕的百叶窗装置的方法
公开(公告)号：US07477814B2
公开(公告)日：2009-01-13
申请号：US11052612
申请日：2005-02-07
申请人： Huei-Pei Kuo , Laurence Hubby , Steven L Naberhuis , Xia Sheng
发明人： Huei-Pei Kuo , Laurence Hubby , Steven L Naberhuis , Xia Sheng
IPC分类号： G02B6/00 , G03B21/56
CPC分类号： G03B21/62 , G02B5/045 , G02B6/0038 , G02B6/06 , H04N5/7408 , H04N9/3141
摘要： A method of making a louver device for a light guide screen. More specifically, in a specific embodiment, a transparent layer is provided. A plurality of similarly angled surfaces are established within the transparent layer. The angled surfaces are coated with a light-reflective material such that the coated surfaces define a plurality of light paths through the transparent layer.
摘要翻译：制造导光屏的百叶窗装置的方法。更具体地，在具体实施例中，提供透明层。在透明层内建立多个相似角度的表面。成角度的表面涂覆有光反射材料，使得涂覆的表面限定穿过透明层的多个光路。

6. 发明授权

US06771010B2 Silicon emitter with low porosity heavily doped contact layer 失效
标题翻译：具有低孔隙率重掺杂接触层的硅发射体
公开(公告)号：US06771010B2
公开(公告)日：2004-08-03
申请号：US09845845
申请日：2001-04-30
申请人： Xia Sheng , Nobuyoshi Koshida , Huei-Pei Kuo
发明人： Xia Sheng , Nobuyoshi Koshida , Huei-Pei Kuo
IPC分类号： H01J102
CPC分类号： H01J1/308 , H01J9/022 , Y10S438/96
摘要： A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.
摘要翻译：高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层，重掺杂区域和与接触层接触的可选顶部电极。接触层降低有源层和顶部电极之间的接触电阻，并且重掺杂区域降低接触层的电阻率，从而增加电子发射效率和从顶部电极稳定的电子发射。电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

7. 发明申请

US20060176556A1 Method of making a louver device for a light guide screen 失效
公开(公告)号：US20060176556A1
公开(公告)日：2006-08-10
申请号：US11052612
申请日：2005-02-07
申请人： Huei-Pei Kuo , Laurence Hubby , Steven Naberhuis , Xia Sheng
发明人： Huei-Pei Kuo , Laurence Hubby , Steven Naberhuis , Xia Sheng
IPC分类号： G03B21/56
CPC分类号： G03B21/62 , G02B5/045 , G02B6/0038 , G02B6/06 , H04N5/7408 , H04N9/3141
摘要： A method of making a louver device for a light guide screen. More specifically, in a specific embodiment, a transparent layer is provided. A plurality of similarly angled surfaces are established within the transparent layer. The angled surfaces are coated with a light-reflective material such that the coated surfaces define a plurality of light paths through the transparent layer.

8. 发明授权

US06939728B2 Method of fabricating silicon emitter with a low porosity heavily doped contact layer 失效
标题翻译：制造具有低孔隙率重掺杂接触层的硅发射器的方法
公开(公告)号：US06939728B2
公开(公告)日：2005-09-06
申请号：US10439642
申请日：2003-05-15
申请人： Xia Sheng , Nobuyoshi Koshida , Huei-Pei Kuo
发明人： Xia Sheng , Nobuyoshi Koshida , Huei-Pei Kuo
IPC分类号： H01J1/312 , H01J1/308 , H01J9/02 , H10L21/00
CPC分类号： H01J1/308 , H01J9/022 , Y10S438/96
摘要： A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.
摘要翻译：公开了高发射电子发射体和制造高发射电子发射体的方法。高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层，重掺杂区域和与接触层接触的可选顶部电极。接触层降低了有源层和顶部电极之间的接触电阻，并且重掺杂区域降低了接触层的电阻率，从而提高了电子发射效率和从顶部电极稳定的电子发射。电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

9. 发明授权

US09030728B2 Reflective display 有权
标题翻译：反光显示
公开(公告)号：US09030728B2
公开(公告)日：2015-05-12
申请号：US14005752
申请日：2011-03-25
申请人： Gary Gibson , Xia Sheng , Dick Henze
发明人： Gary Gibson , Xia Sheng , Dick Henze
IPC分类号： G02B26/00 , G02F1/167
CPC分类号： G02B26/005 , G02F1/167
摘要： A display element comprises a reservoir and a channel connected to the reservoir. The channel extends across an area including a visible area of the display element, and the reservoir is substantially outside the visible area. The display element further comprises at least one electrode and a luminescent fluid in the reservoir and movable, by means of signals applied to the at least one electrode, between a first position and a second position. In the first position, the luminescent fluid is substantially contained in the reservoir outside the visible area and in the second position, the luminescent fluid extends along the channel to occupy the visible area. The luminescent fluid absorbs light in a first color waveband and converts the absorbed light to light in a second color waveband different from the first color waveband.
摘要翻译：显示元件包括储存器和连接到储存器的通道。通道延伸穿过包括显示元件的可见区域的区域，并且储存器基本上在可见区域的外部。显示元件还包括储存器中的至少一个电极和发光流体，并通过施加到至少一个电极的信号在第一位置和第二位置之间移动。在第一位置，发光流体基本上容纳在可见区域外部的储存器中，而在第二位置，发光流体沿通道延伸以占据可见区域。发光液体吸收第一颜色波段中的光，并将吸收的光转换成与第一颜色波段不同的第二颜色波段的光。

10. 发明申请

US20130182313A1 LUMINESCENT PIXEL ASSEMBLY 有权
标题翻译：发光像素组件
公开(公告)号：US20130182313A1
公开(公告)日：2013-07-18
申请号：US13876423
申请日：2010-10-03
申请人： Gary Gibson , Xia Sheng
发明人： Gary Gibson , Xia Sheng
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , G02F2001/1678 , G02F2202/046
摘要： An assembly corresponding to a pixel includes sub-assemblies that each correspond to a sub-pixel of the pixel. At least one of the sub-assemblies includes a luminescent fluid, black particles and a mirror. The luminescent fluid converts wavelengths of light less than a conversion wavelength of the sub-assembly to the conversion wavelength. The black particles are positionable within luminescent fluid in accordance with a color to be displayed by the assembly. The mirror is disposed at a bottom end of the sub-assembly.
摘要翻译：对应于像素的组件包括各自对应于像素的子像素的子组件。至少一个子组件包括发光液体，黑色颗粒和反射镜。发光流体将小于子组件的转换波长的光的波长转换为转换波长。黑色颗粒可以根据要由组件显示的颜色定位在发光体内。镜子设置在子组件的底端。

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