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    • 2. 发明申请
    • HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME
    • 异相双极晶体管及其形成方法
    • US20100133586A1
    • 2010-06-03
    • US12463011
    • 2009-05-08
    • Byoung-Gue MINJong-Min LeeSeong-II KimKyung-Ho LeeHyung-Sup YoonEun-Soo Nam
    • Byoung-Gue MINJong-Min LeeSeong-II KimKyung-Ho LeeHyung-Sup YoonEun-Soo Nam
    • H01L29/737H01L21/331
    • H01L29/42304H01L29/41708H01L29/66318H01L29/7371
    • Provided are a heterojunction bipolar transistor and a method of forming the same. The method includes forming an emitter electrode on an emitter capping pattern, a base electrode on a base pattern, and a collector electrode on a subcollector pattern, the subcollector pattern, the base pattern, an emitter pattern, and the emitter capping pattern being provided to a substrate; patterning a protection insulation layer and a first dummy pattern covering the emitter electrode, the base electrode, and the collector electrode, to expose the emitter electrode, the base electrode, and the collector electrode; forming a second dummy pattern to electrically separate the emitter electrode, the base electrode, and the collector electrode; forming, on the substrate provided with the second dummy pattern, an emitter electrode interconnection connected to the emitter electrode, a base electrode interconnection connected to the base electrode, and a collector electrode interconnection connected to the collector electrode; and removing the first and second dummy patterns.
    • 提供了一种异质结双极晶体管及其形成方法。 该方法包括在发射极盖图案上形成发射电极,在基底图案上形成基极,在子集电极图案上形成集电极,将子集电极图案,基底图案,发射极图案和发射极封盖图案设置在 底物; 图案化保护绝缘层和覆盖发射电极,基极和集电极的第一虚拟图案,以暴露发射极,基极和集电极; 形成第二虚设图形以电分离发射电极,基极和集电极; 在设置有第二虚设图案的基板上形成连接到发射极的发射极电极互连,与基极连接的基极互连和与集电极连接的集电极互连; 以及去除第一和第二虚拟图案。