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1. 发明授权

US08461655B2 Micromechanical sound transducer having a membrane support with tapered surface 有权
标题翻译：具有带锥形表面的膜支架的微机械声换能器
公开(公告)号：US08461655B2
公开(公告)日：2013-06-11
申请号：US13077642
申请日：2011-03-31
申请人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
发明人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
IPC分类号： H01L29/84 , G02B26/00 , B01D1/22
CPC分类号： B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2203/0384 , B81C1/00103
摘要： A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region. The etching continues at least until the layer of second membrane support material has been removed in the first region to expose the layer of membrane material.
摘要翻译：微机械声换能器的制造方法包括分别在第一蚀刻速率和较低的第二蚀刻速率的基板装置的第一主表面上沉积连续的第一和第二膜支撑材料层。然后沉积一层膜材料。在衬底布置中从衬底装置的一侧与膜支撑材料和膜材料形成空腔，至少直到空腔延伸到第一膜支撑材料层。第一和第二膜支撑材料的层通过在位于腔的延伸部中的至少一个第一区域中，在围绕第一区域的第二区域中施加蚀刻剂而通过空腔施加蚀刻剂。蚀刻在第二区域中在第二膜支撑材料层上产生锥形表面。蚀刻继续至少直到第二膜支撑材料层在第一区域中被去除以暴露膜材料层。

2. 发明申请

US20120248554A1 Micromechanical Sound Transducer Having a Membrane Support with Tapered Surface 有权
标题翻译：具有锥形表面的膜支撑的微机械声音传感器
公开(公告)号：US20120248554A1
公开(公告)日：2012-10-04
申请号：US13077642
申请日：2011-03-31
申请人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
发明人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2203/0384 , B81C1/00103
摘要： A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region. The etching continues at least until the layer of second membrane support material has been removed in the first region to expose the layer of membrane material.
摘要翻译：微机械声换能器的制造方法包括分别以第一蚀刻速率和较低的第二蚀刻速率在衬底布置的第一主表面上沉积连续的第一和第二膜支撑材料层。然后沉积一层膜材料。在衬底布置中从衬底装置的一侧与膜支撑材料和膜材料形成空腔，至少直到空腔延伸到第一膜支撑材料层。第一和第二膜支撑材料的层通过在位于腔的延伸部中的至少一个第一区域中，在围绕第一区域的第二区域中施加蚀刻剂而通过空腔施加蚀刻剂。蚀刻在第二区域中在第二膜支撑材料层上产生锥形表面。蚀刻继续至少直到第二膜支撑材料层在第一区域中被去除以暴露膜材料层。

3. 发明申请

US20120319217A1 Semiconductor Devices and Methods of Fabrication Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319217A1
公开(公告)日：2012-12-20
申请号：US13162088
申请日：2011-06-16
申请人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
发明人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
IPC分类号： H01L29/84 , H01L21/20
CPC分类号： H04R31/003 , B81B3/001 , B81B3/0072 , B81B2201/0257 , H04R7/14 , H04R19/005 , H04R19/04
摘要： In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
摘要翻译：在一个实施例中，制造半导体器件的方法包括氧化衬底以形成在衬底的顶表面上方延伸的局部氧化物区域。在局部氧化物区域和衬底的顶表面上形成膜层。去除膜层下面的一部分基底。去除膜层下面的局部氧化物区域。

4. 发明授权

US09002037B2 MEMS structure with adjustable ventilation openings 有权
标题翻译：具有可调通风口的MEMS结构
公开(公告)号：US09002037B2
公开(公告)日：2015-04-07
申请号：US13531373
申请日：2012-06-22
申请人： Alfons Dehe , Matthias Herrmann , Ulrich Krumbein , Stefan Barzen , Wolfgang Klein , Wolfgang Friza , Martin Wurzer
发明人： Alfons Dehe , Matthias Herrmann , Ulrich Krumbein , Stefan Barzen , Wolfgang Klein , Wolfgang Friza , Martin Wurzer
IPC分类号： H04R25/00 , H04R3/00 , B81B7/00 , H04R7/18 , H04R19/00
CPC分类号： B81B7/0029 , B81B2201/0257 , B81B2203/0127 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/15151 , H01L2924/16152 , H04R7/18 , H04R19/005 , H04R2307/207 , H01L2924/00014
摘要： A MEMS structure includes a backplate, a membrane, and an adjustable ventilation opening configured to reduce a pressure difference between a first space contacting the membrane and a second space contacting an opposite side of the membrane. The adjustable ventilation opening is passively actuated as a function of the pressure difference between the first space and the second space.
摘要翻译： MEMS结构包括背板，膜和可调节的通风口，其被配置为减小接触膜的第一空间与接触膜的相对侧的第二空间之间的压力差。根据第一空间和第二空间之间的压差，被调节的通风口被动地致动。

5. 发明授权

US08975107B2 Method of manufacturing a semiconductor device comprising a membrane over a substrate by forming a plurality of features using local oxidation regions 有权
标题翻译：通过使用局部氧化区形成多个特征来制造半导体器件的方法，该半导体器件包括在衬底上的膜
公开(公告)号：US08975107B2
公开(公告)日：2015-03-10
申请号：US13162088
申请日：2011-06-16
申请人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
发明人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
IPC分类号： H01L21/76
CPC分类号： H04R31/003 , B81B3/001 , B81B3/0072 , B81B2201/0257 , H04R7/14 , H04R19/005 , H04R19/04
摘要： In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
摘要翻译：在一个实施例中，制造半导体器件的方法包括氧化衬底以形成在衬底的顶表面上方延伸的局部氧化物区域。在局部氧化物区域和衬底的顶表面上形成膜层。去除膜层下面的一部分基底。去除膜层下面的局部氧化物区域。

6. 发明申请

US20130221453A1 Tunable MEMS Device and Method of Making a Tunable MEMS Device 有权
标题翻译：可调谐MEMS器件和制造可调谐MEMS器件的方法
公开(公告)号：US20130221453A1
公开(公告)日：2013-08-29
申请号：US13408928
申请日：2012-02-29
申请人： Alfons Dehe , Martin Wurzer , Christian Herzum , Wolfgang Klein , Stefan Barzen
发明人： Alfons Dehe , Martin Wurzer , Christian Herzum , Wolfgang Klein , Stefan Barzen
IPC分类号： H01L29/84
CPC分类号： B81B3/0086 , B81B2201/0257 , H04R1/04 , H04R19/005 , H04R19/04 , H04R31/006
摘要： A tunable MEMS device and a method of manufacturing a tunable MEMS device are disclosed. In accordance with an embodiment of the present invention, a semiconductor device comprises a substrate, a moveable electrode and a counter electrode. The moveable electrode or the counter electrode comprises a first region and a second region, wherein the first region is isolated from the second region, wherein the first region is configured to be tuned, wherein the second region is configured to provide a sensing signal or control a system, and wherein the moveable electrode and the counter electrode are mechanically connected to the substrate.
摘要翻译：公开了一种可调谐MEMS器件和制造可调谐MEMS器件的方法。根据本发明的实施例，半导体器件包括衬底，可移动电极和对电极。可移动电极或对电极包括第一区域和第二区域，其中第一区域与第二区域隔离，其中第一区域被配置为被调谐，其中第二区域被配置为提供感测信号或控制系统，并且其中可移动电极和对电极机械地连接到基板。

7. 发明申请

US20130223023A1 MEMS Structure with Adjustable Ventilation Openings 有权
标题翻译：具有可调通风开口的MEMS结构
公开(公告)号：US20130223023A1
公开(公告)日：2013-08-29
申请号：US13531373
申请日：2012-06-22
申请人： Alfons Dehe , Matthias Herrmann , Ulrich Krumbein , Stefan Barzen , Wolfgang Klein
发明人： Alfons Dehe , Matthias Herrmann , Ulrich Krumbein , Stefan Barzen , Wolfgang Klein
IPC分类号： H05K7/02
CPC分类号： B81B7/0029 , B81B2201/0257 , B81B2203/0127 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/15151 , H01L2924/16152 , H04R7/18 , H04R19/005 , H04R2307/207 , H01L2924/00014
摘要： A MEMS structure includes a backplate, a membrane, and an adjustable ventilation opening configured to reduce a pressure difference between a first space contacting the membrane and a second space contacting an opposite side of the membrane. The adjustable ventilation opening is passively actuated as a function of the pressure difference between the first space and the second space.
摘要翻译： MEMS结构包括背板，膜和可调节的通风口，其被配置为减小接触膜的第一空间与接触膜的相对侧的第二空间之间的压力差。根据第一空间和第二空间之间的压差，被调节的通风口被动地致动。

8. 发明授权

US08723277B2 Tunable MEMS device and method of making a tunable MEMS device 有权
标题翻译：可调谐MEMS器件和制造可调MEMS器件的方法
公开(公告)号：US08723277B2
公开(公告)日：2014-05-13
申请号：US13408928
申请日：2012-02-29
申请人： Alfons Dehe , Martin Wurzer , Christian Herzum , Wolfgang Klein , Stefan Barzen
发明人： Alfons Dehe , Martin Wurzer , Christian Herzum , Wolfgang Klein , Stefan Barzen
IPC分类号： H01L29/84
CPC分类号： B81B3/0086 , B81B2201/0257 , H04R1/04 , H04R19/005 , H04R19/04 , H04R31/006
摘要： A tunable MEMS device and a method of manufacturing a tunable MEMS device are disclosed. In accordance with an embodiment of the present invention, a semiconductor device comprises a substrate, a moveable electrode and a counter electrode. The moveable electrode or the counter electrode comprises a first region and a second region, wherein the first region is isolated from the second region, wherein the first region is configured to be tuned, wherein the second region is configured to provide a sensing signal or control a system, and wherein the moveable electrode and the counter electrode are mechanically connected to the substrate.
摘要翻译：公开了一种可调谐MEMS器件和制造可调谐MEMS器件的方法。根据本发明的实施例，半导体器件包括衬底，可移动电极和对电极。可移动电极或对电极包括第一区域和第二区域，其中第一区域与第二区域隔离，其中第一区域被配置为被调谐，其中第二区域被配置为提供感测信号或控制系统，并且其中可移动电极和对电极机械地连接到基板。

9. 发明授权

US08334564B2 Field plate trench transistor and method for producing it 有权
标题翻译：场板沟槽晶体管及其制造方法
公开(公告)号：US08334564B2
公开(公告)日：2012-12-18
申请号：US12984253
申请日：2011-01-04
申请人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
发明人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L27/04 , H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/404 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/732 , H01L29/735 , H01L29/7803 , H01L29/7808 , H01L29/861
摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
摘要翻译：具有半导体本体的场板沟槽晶体管。在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

10. 发明申请

US20070125992A1 Lifting system, transportation system cradle, intermediate product with transportation system cradle and transportation system structure, assembly plant and assembly method for manufacturing assembly of intermediate products 有权
标题翻译：起重系统，运输系统摇篮，中间产品与运输系统摇篮和运输系统结构，组装厂和组装方法，用于制造中间产品的装配
公开(公告)号：US20070125992A1
公开(公告)日：2007-06-07
申请号：US11635317
申请日：2006-12-07
申请人： Wolfgang Klein , Andreas Hein , Michael Matheisl
发明人： Wolfgang Klein , Andreas Hein , Michael Matheisl
IPC分类号： E02C3/00 , E01D1/00
CPC分类号： B66F3/08 , B66B31/00
摘要： A lifting system for vertical adjustment of a transportation system structure consists of a foot that is fastened onto the transportation system structure and during manufacturing assembly of the transportation system structure points downwards, and a foot cradle. The foot is bounded on opposite sides by two foot surfaces that are arranged at a foot-surface angle to each other. The foot cradle has two complimentary supporting surfaces against which the foot surfaces rest. The supporting surfaces are vertically movable, allowing the foot and transportation system structure to be raised or lowered, and the vertical adjustment thereby takes place. A transportation system cradle has at least one such foot cradle, and together with the transportation system structure suggested, form an intermediate product that can be moved between assembly stations in an assembly plant.
摘要翻译：用于运输系统结构的垂直调整的提升系统包括紧固在运输系统结构上的脚，以及运输系统结构点向下的制造组装和脚架。脚在相对侧上被两个彼此以足部表面的角度布置的脚部表面限定。脚托具有两个互补的支撑表面，脚部表面靠着该支撑表面。支撑表面是可垂直移动的，允许脚和运输系统结构升高或降低，从而发生垂直调节。运输系统支架至少具有一个这样的脚架，并且与建议的运输系统结构一起形成可在组装工厂中的组装工位之间移动的中间产品。

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