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1. 发明授权

US08822329B2 Method for making conductive interconnects 有权
标题翻译：制造导电互连的方法
公开(公告)号：US08822329B2
公开(公告)日：2014-09-02
申请号：US12567950
申请日：2009-09-28
申请人： Rainer Leuschner , Gunther Mackh , Uwe Seidel
发明人： Rainer Leuschner , Gunther Mackh , Uwe Seidel
IPC分类号： H01L23/535 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76898 , H01L21/76807 , H01L21/7681 , H01L21/76816 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76847 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least partially simultaneously.
摘要翻译：一个或多个实施例涉及一种用于制造半导体结构的方法，所述方法包括：至少部分地通过所述衬底形成第一导电互连; 以及在所述衬底上形成第二导电互连，其中所述第一导电互连和所述第二导电互连至少部分地同时形成。

2. 外观设计

USD659718S1 Front cover of a pump 有权
标题翻译：泵的前盖
公开(公告)号：USD659718S1
公开(公告)日：2012-05-15
申请号：US29391595
申请日：2011-05-11
申请人： Uwe Seidel
设计人： Uwe Seidel

3. 外观设计

USD659715S1 Front cover of a pump 有权
公开(公告)号：USD659715S1
公开(公告)日：2012-05-15
申请号：US29391596
申请日：2011-05-11
申请人： Uwe Seidel
设计人： Uwe Seidel

4. 发明申请

US20110073997A1 Semiconductor Structure and Method for Making Same 有权
标题翻译：半导体结构及其制作方法
公开(公告)号：US20110073997A1
公开(公告)日：2011-03-31
申请号：US12567950
申请日：2009-09-28
申请人： Rainer LEUSCHNER , Gunther MACKH , Uwe SEIDEL
发明人： Rainer LEUSCHNER , Gunther MACKH , Uwe SEIDEL
IPC分类号： H01L23/535 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/76807 , H01L21/7681 , H01L21/76816 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76847 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least partially simultaneously.
摘要翻译：一个或多个实施例涉及一种用于制造半导体结构的方法，所述方法包括：至少部分地通过所述衬底形成第一导电互连; 以及在所述衬底上形成第二导电互连，其中所述第一导电互连和所述第二导电互连至少部分地同时形成。

5. 发明申请

US20100230818A1 Through Substrate Via Semiconductor Components 有权
标题翻译：通过基板通过半导体元件
公开(公告)号：US20100230818A1
公开(公告)日：2010-09-16
申请号：US12790220
申请日：2010-05-28
申请人： Albert Birner , Uwe Hoeckele , Thomas Kunstmann , Uwe Seidel
发明人： Albert Birner , Uwe Hoeckele , Thomas Kunstmann , Uwe Seidel
IPC分类号： H01L23/48
CPC分类号： H01L21/76877 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/05571 , H01L2224/13009 , H01L2224/13025 , H01L2224/16 , H01L2924/00014 , H01L2924/0002 , H01L2924/01019 , H01L2924/01068 , H01L2924/01079 , H01L2924/00012 , H01L2224/05552
摘要： A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.
摘要翻译：描述了在形成半导体部件时通过衬底通孔形成的结构和方法。在一个实施例中，本发明描述了一种通过用填充材料部分地填充开口形成贯通衬底通孔的方法，并且在第一填充材料之上形成第一绝缘层，从而在开口上形成间隙。该方法还包括形成第二绝缘层以封闭间隙，从而在开口内形成封闭空腔。

6. 发明授权

US08399936B2 Through substrate via semiconductor components 有权
标题翻译：通过半导体元件的基板
公开(公告)号：US08399936B2
公开(公告)日：2013-03-19
申请号：US12790220
申请日：2010-05-28
申请人： Albert Birner , Uwe Hoeckele , Thomas Kunstmann , Uwe Seidel
发明人： Albert Birner , Uwe Hoeckele , Thomas Kunstmann , Uwe Seidel
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/119
CPC分类号： H01L21/76877 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/05571 , H01L2224/13009 , H01L2224/13025 , H01L2224/16 , H01L2924/00014 , H01L2924/0002 , H01L2924/01019 , H01L2924/01068 , H01L2924/01079 , H01L2924/00012 , H01L2224/05552
摘要： A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.
摘要翻译：描述了在形成半导体部件时通过衬底通孔形成的结构和方法。在一个实施例中，本发明描述了一种通过用填充材料部分地填充开口形成贯通衬底通孔的方法，并且在第一填充材料之上形成第一绝缘层，从而在开口上形成间隙。该方法还包括形成第二绝缘层以封闭间隙，从而在开口内形成封闭空腔。

7. 发明授权

US08227340B2 Method for producing a copper connection between two sides of a substrate 有权
标题翻译：在基板的两面之间制造铜连接的方法
公开(公告)号：US08227340B2
公开(公告)日：2012-07-24
申请号：US12433033
申请日：2009-04-30
申请人： Uwe Seidel , Thorsten Obernhuber , Albert Birner , Georg Ehrentraut
发明人： Uwe Seidel , Thorsten Obernhuber , Albert Birner , Georg Ehrentraut
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/461
CPC分类号： H01L21/76898
摘要： A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.
摘要翻译：一种用于在半导体衬底的第一表面和半导体衬底的第二表面之间制造导电连接的方法包括制造一个孔，形成包括钨的导电层，从半导体的第一表面去除导电层衬底，用铜填充孔并使半导体衬底变薄。该孔由半导体衬底的第一表面制成半导体衬底。从半导体衬底的第一表面去除导电层，其中导电层在孔中至少具有减小的厚度。半导体衬底从半导体衬底的第一表面的相对表面的表面开始变薄，以获得在半导体衬底的第二表面处未被覆盖的半导体衬底的第二表面。

8. 发明申请

US20110260302A1 SHIELDING DEVICE 有权
标题翻译：屏蔽装置
公开(公告)号：US20110260302A1
公开(公告)日：2011-10-27
申请号：US13178107
申请日：2011-07-07
申请人： Winfried Bakalski , Bernd Eisener , Uwe Seidel , Markus Zannoth
发明人： Winfried Bakalski , Bernd Eisener , Uwe Seidel , Markus Zannoth
IPC分类号： H01L23/552
CPC分类号： H01L23/552 , H01L23/5225 , H01L23/60 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.
摘要翻译：本发明的一个方面涉及一种用于屏蔽电磁辐射的屏蔽装置，包括屏蔽基座元件，屏蔽盖元件和屏蔽横向元件，用于将基座元件电连接到覆盖元件，使屏蔽电路部分布置在屏蔽元件内。由于屏蔽元件的至少一部分包括半导体材料，因此可以在集成电路中完全且成本有效地实现屏蔽装置。

9. 发明授权

US07176128B2 Method for fabrication of a contact structure 有权
标题翻译：接触结构的制造方法
公开(公告)号：US07176128B2
公开(公告)日：2007-02-13
申请号：US10755844
申请日：2004-01-12
申请人： Carsten Ahrens , Jakob Huber , Uwe Seidel
发明人： Carsten Ahrens , Jakob Huber , Uwe Seidel
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L21/76898 , H01L23/481 , H01L23/49827 , H01L2224/02372 , H01L2224/0401 , H01L2224/13009 , H01L2924/3011
摘要： A method for producing a contact structure on a structured surface comprising producing a first conductive layer on the structured surface, wherein the first conductive layer comprising tungsten. A conductive seed layer is produced on the first conductive layer, the contact structure being produced by electroplating on the seed layer. The first conductive layer serves as an etch stop for selectively removing substrate material from the backside.
摘要翻译：一种用于在结构化表面上制造接触结构的方法，包括在所述结构化表面上产生第一导电层，其中所述第一导电层包含钨。在第一导电层上产生导电种子层，接触结构通过在种子层上电镀来制造。第一导电层用作用于从背面选择性地去除衬底材料的蚀刻停止件。

10. 发明申请

US20060053603A1 Apparatus for controlling a compression zone in a compressively shrinking fabric web 有权
标题翻译：用于控制压缩收缩织物网中的压缩区域的装置
公开(公告)号：US20060053603A1
公开(公告)日：2006-03-16
申请号：US10942670
申请日：2004-09-16
申请人： Frank Catallo , Uwe Seidel
发明人： Frank Catallo , Uwe Seidel
IPC分类号： D06C21/00
CPC分类号： D06C21/00
摘要： Devices for adjusting positions of: a removable slip sheet in a compression zone defined by a pair of rollers of an open width textile compressive shrinking machine to adjust a size of the compression zone for various thickness and types of textiles; a wedge between the pair of rollers for spacing apart the pair of rollers a predetermined dimension; and a shoe in the compression zone for allowing for different thickness and types of textiles.
摘要翻译：用于调节位置的装置：在由宽幅织物压缩收缩机的一对辊限定的压缩区域中的可移动滑动片，用于调整各种厚度和类型的纺织品的压缩区域的尺寸; 所述一对辊之间的楔形件用于将所述一对辊间隔开预定尺寸; 以及用于允许不同厚度和类型的纺织品的压缩区域中的鞋。

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