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1. 发明授权

US08575037B2 Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same 有权
标题翻译：用于制造用于半导体结构的空腔结构的腔体结构的制造方法和由其制造的半导体麦克风
公开(公告)号：US08575037B2
公开(公告)日：2013-11-05
申请号：US12979104
申请日：2010-12-27
申请人： Wolfgang Friza , Thomas Grille , Klaus Muemmler , Guenter Zieger , Carsten Ahrens
发明人： Wolfgang Friza , Thomas Grille , Klaus Muemmler , Guenter Zieger , Carsten Ahrens
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H04R23/00 , B81B2201/0257 , B81B2203/0118 , B81B2203/0315 , B81C1/00047 , B81C1/00936 , B81C2201/0109 , G01L9/0042 , H04R19/005 , H04R31/006
摘要： Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.
摘要翻译：实施例示出了用于制造空腔结构的方法，半导体结构，用于半导体器件的腔结构和由其制造的半导体麦克风。在一些实施例中，用于制造空腔结构的方法包括提供第一层，在第一层上沉积碳层，至少部分地覆盖碳层与第二层以限定空腔结构，通过干法蚀刻碳在第一和第二层之间形成空腔结构。

2. 发明申请

US20120161257A1 Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same 有权
标题翻译：用于制造半导体结构的腔结构的腔结构的方法和由其制造的半导体麦克风
公开(公告)号：US20120161257A1
公开(公告)日：2012-06-28
申请号：US12979104
申请日：2010-12-27
申请人： Wolfgang Friza , Thomas Grille , Klaus Muemmler , Guenter Zieger , Carsten Ahrens
发明人： Wolfgang Friza , Thomas Grille , Klaus Muemmler , Guenter Zieger , Carsten Ahrens
IPC分类号： H01L29/84 , H01L21/302
CPC分类号： H04R23/00 , B81B2201/0257 , B81B2203/0118 , B81B2203/0315 , B81C1/00047 , B81C1/00936 , B81C2201/0109 , G01L9/0042 , H04R19/005 , H04R31/006
摘要： Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.
摘要翻译：实施例示出了用于制造空腔结构的方法，半导体结构，用于半导体器件的腔结构和由其制造的半导体麦克风。在一些实施例中，用于制造空腔结构的方法包括提供第一层，在第一层上沉积碳层，至少部分地覆盖碳层与第二层以限定空腔结构，通过干法蚀刻碳在第一和第二层之间形成空腔结构。

3. 发明申请

US20120319217A1 Semiconductor Devices and Methods of Fabrication Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319217A1
公开(公告)日：2012-12-20
申请号：US13162088
申请日：2011-06-16
申请人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
发明人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
IPC分类号： H01L29/84 , H01L21/20
CPC分类号： H04R31/003 , B81B3/001 , B81B3/0072 , B81B2201/0257 , H04R7/14 , H04R19/005 , H04R19/04
摘要： In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
摘要翻译：在一个实施例中，制造半导体器件的方法包括氧化衬底以形成在衬底的顶表面上方延伸的局部氧化物区域。在局部氧化物区域和衬底的顶表面上形成膜层。去除膜层下面的一部分基底。去除膜层下面的局部氧化物区域。

4. 发明授权

US09002037B2 MEMS structure with adjustable ventilation openings 有权
标题翻译：具有可调通风口的MEMS结构
公开(公告)号：US09002037B2
公开(公告)日：2015-04-07
申请号：US13531373
申请日：2012-06-22
申请人： Alfons Dehe , Matthias Herrmann , Ulrich Krumbein , Stefan Barzen , Wolfgang Klein , Wolfgang Friza , Martin Wurzer
发明人： Alfons Dehe , Matthias Herrmann , Ulrich Krumbein , Stefan Barzen , Wolfgang Klein , Wolfgang Friza , Martin Wurzer
IPC分类号： H04R25/00 , H04R3/00 , B81B7/00 , H04R7/18 , H04R19/00
CPC分类号： B81B7/0029 , B81B2201/0257 , B81B2203/0127 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/15151 , H01L2924/16152 , H04R7/18 , H04R19/005 , H04R2307/207 , H01L2924/00014
摘要： A MEMS structure includes a backplate, a membrane, and an adjustable ventilation opening configured to reduce a pressure difference between a first space contacting the membrane and a second space contacting an opposite side of the membrane. The adjustable ventilation opening is passively actuated as a function of the pressure difference between the first space and the second space.
摘要翻译： MEMS结构包括背板，膜和可调节的通风口，其被配置为减小接触膜的第一空间与接触膜的相对侧的第二空间之间的压力差。根据第一空间和第二空间之间的压差，被调节的通风口被动地致动。

5. 发明授权

US08975107B2 Method of manufacturing a semiconductor device comprising a membrane over a substrate by forming a plurality of features using local oxidation regions 有权
标题翻译：通过使用局部氧化区形成多个特征来制造半导体器件的方法，该半导体器件包括在衬底上的膜
公开(公告)号：US08975107B2
公开(公告)日：2015-03-10
申请号：US13162088
申请日：2011-06-16
申请人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
发明人： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
IPC分类号： H01L21/76
CPC分类号： H04R31/003 , B81B3/001 , B81B3/0072 , B81B2201/0257 , H04R7/14 , H04R19/005 , H04R19/04
摘要： In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
摘要翻译：在一个实施例中，制造半导体器件的方法包括氧化衬底以形成在衬底的顶表面上方延伸的局部氧化物区域。在局部氧化物区域和衬底的顶表面上形成膜层。去除膜层下面的一部分基底。去除膜层下面的局部氧化物区域。

6. 发明授权

US08461655B2 Micromechanical sound transducer having a membrane support with tapered surface 有权
标题翻译：具有带锥形表面的膜支架的微机械声换能器
公开(公告)号：US08461655B2
公开(公告)日：2013-06-11
申请号：US13077642
申请日：2011-03-31
申请人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
发明人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
IPC分类号： H01L29/84 , G02B26/00 , B01D1/22
CPC分类号： B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2203/0384 , B81C1/00103
摘要： A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region. The etching continues at least until the layer of second membrane support material has been removed in the first region to expose the layer of membrane material.
摘要翻译：微机械声换能器的制造方法包括分别在第一蚀刻速率和较低的第二蚀刻速率的基板装置的第一主表面上沉积连续的第一和第二膜支撑材料层。然后沉积一层膜材料。在衬底布置中从衬底装置的一侧与膜支撑材料和膜材料形成空腔，至少直到空腔延伸到第一膜支撑材料层。第一和第二膜支撑材料的层通过在位于腔的延伸部中的至少一个第一区域中，在围绕第一区域的第二区域中施加蚀刻剂而通过空腔施加蚀刻剂。蚀刻在第二区域中在第二膜支撑材料层上产生锥形表面。蚀刻继续至少直到第二膜支撑材料层在第一区域中被去除以暴露膜材料层。

7. 发明申请

US20120248554A1 Micromechanical Sound Transducer Having a Membrane Support with Tapered Surface 有权
标题翻译：具有锥形表面的膜支撑的微机械声音传感器
公开(公告)号：US20120248554A1
公开(公告)日：2012-10-04
申请号：US13077642
申请日：2011-03-31
申请人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
发明人： Wolfgang Klein , Uwe Seidel , Stefan Barzen , Mohsin Nawaz , Wolfgang Friza , Xu Cheng , Alfons Dehe
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2203/0384 , B81C1/00103
摘要： A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region. The etching continues at least until the layer of second membrane support material has been removed in the first region to expose the layer of membrane material.
摘要翻译：微机械声换能器的制造方法包括分别以第一蚀刻速率和较低的第二蚀刻速率在衬底布置的第一主表面上沉积连续的第一和第二膜支撑材料层。然后沉积一层膜材料。在衬底布置中从衬底装置的一侧与膜支撑材料和膜材料形成空腔，至少直到空腔延伸到第一膜支撑材料层。第一和第二膜支撑材料的层通过在位于腔的延伸部中的至少一个第一区域中，在围绕第一区域的第二区域中施加蚀刻剂而通过空腔施加蚀刻剂。蚀刻在第二区域中在第二膜支撑材料层上产生锥形表面。蚀刻继续至少直到第二膜支撑材料层在第一区域中被去除以暴露膜材料层。

8. 发明授权

US06649459B2 Method for manufacturing a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US06649459B2
公开(公告)日：2003-11-18
申请号：US09817594
申请日：2001-03-26
申请人： Gerald Deboy , Wolfgang Friza , Oliver Häberlen , Michael Rüb , Helmut Strack
发明人： Gerald Deboy , Wolfgang Friza , Oliver Häberlen , Michael Rüb , Helmut Strack
IPC分类号： H01L21338
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/1095 , H01L29/41766
摘要： The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.
摘要翻译：本发明涉及一种用于制造半导体元件的方法，该半导体元件包括交替地位于半导体本体中的不同导电类型的半导体区域。不同导电类型的半导体区域至少从一个第一区延伸到靠近第二区的位置。由于沟槽和沟槽填充中的可变掺杂，产生从第一区和第二区两者增加的电场。

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