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1. 发明授权

US08120968B2 High voltage word line driver 失效
标题翻译：高电压字线驱动器
公开(公告)号：US08120968B2
公开(公告)日：2012-02-21
申请号：US12704703
申请日：2010-02-12
申请人： William Robert Reohr , John Edward Barth, Jr. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
发明人： William Robert Reohr , John Edward Barth, Jr. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
IPC分类号： G11C16/06
CPC分类号： G11C8/08 , G11C11/4085
摘要： A word line driver circuit coupled to a memory circuit word line includes pull-up, pull-up clamp, pull-down and pull-down clamp transistors, each having a source, a drain and a gate. For the pull-up transistor, the source is coupled to a first power supply, and the gate to a pull-up control signal. For the pull-up clamp transistor, the source is coupled to the drain of the pull-up transistor, the drain to the word line, and the gate to a pull-up clamp gate signal. For the pull-down transistor, the source is coupled to a second power supply, and the gate to a pull-down control signal. For the pull-down clamp transistor, the source is coupled to the drain of the pull-down transistor, the drain to the word line, and the gate to a pull-down clamp gate signal. The word line is coupled to one or more DRAM cells. Source to drain voltage magnitudes of the pull-up and pull-down transistors are less than a voltage between the first and second power supplies.
摘要翻译：耦合到存储器电路字线的字线驱动电路包括上拉，上拉钳位，下拉和下拉钳位晶体管，每个具有源极，漏极和栅极。对于上拉晶体管，源极耦合到第一电源，并将栅极耦合到上拉控制信号。对于上拉钳位晶体管，源极耦合到上拉晶体管的漏极，到字线的漏极，并将栅极耦合到上拉钳位信号。对于下拉晶体管，源极耦合到第二电源，并将栅极耦合到下拉控制信号。对于下拉钳位晶体管，源极耦合到下拉晶体管的漏极，漏极到字线，而栅极耦合到下拉钳位栅极信号。字线耦合到一个或多个DRAM单元。源极到漏极上拉和下拉晶体管的电压幅度小于第一和第二电源之间的电压。

2. 发明申请

US20110199837A1 High Voltage Word Line Driver 失效
标题翻译：高电压字线驱动器
公开(公告)号：US20110199837A1
公开(公告)日：2011-08-18
申请号：US12704703
申请日：2010-02-12
申请人： William Robert Reohr , John Edward Barth, JR. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
发明人： William Robert Reohr , John Edward Barth, JR. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
IPC分类号： G11C8/08 , G11C7/00
CPC分类号： G11C8/08 , G11C11/4085
摘要： A word line driver circuit coupled to a memory circuit word line includes pull-up, pull-up clamp, pull-down and pull-down clamp transistors, each having a source, a drain and a gate. For the pull-up transistor, the source is coupled to a first power supply, and the gate to a pull-up control signal. For the pull-up clamp transistor, the source is coupled to the drain of the pull-up transistor, the drain to the word line, and the gate to a pull-up clamp gate signal. For the pull-down transistor, the source is coupled to a second power supply, and the gate to a pull-down control signal. For the pull-down clamp transistor, the source is coupled to the drain of the pull-down transistor, the drain to the word line, and the gate to a pull-down clamp gate signal. The word line is coupled to one or more DRAM cells. Source to drain voltage magnitudes of the pull-up and pull-down transistors are less than a voltage between the first and second power supplies.
摘要翻译：耦合到存储器电路字线的字线驱动电路包括上拉，上拉钳位，下拉和下拉钳位晶体管，每个具有源极，漏极和栅极。对于上拉晶体管，源极耦合到第一电源，并将栅极耦合到上拉控制信号。对于上拉钳位晶体管，源极耦合到上拉晶体管的漏极，到字线的漏极，并将栅极耦合到上拉钳位信号。对于下拉晶体管，源极耦合到第二电源，并将栅极耦合到下拉控制信号。对于下拉钳位晶体管，源极耦合到下拉晶体管的漏极，漏极到字线，而栅极耦合到下拉钳位栅极信号。字线耦合到一个或多个DRAM单元。源极到漏极上拉和下拉晶体管的电压幅度小于第一和第二电源之间的电压。

3. 发明申请

US20100001696A1 SYSTEM TO IMPROVE A MULTISTAGE CHARGE PUMP AND ASSOCIATED METHODS 失效
标题翻译：改进多功能充气泵及相关方法的系统
公开(公告)号：US20100001696A1
公开(公告)日：2010-01-07
申请号：US12166192
申请日：2008-07-01
申请人： Charlie C. Hwang , Paul D. Muench , Donald W. Plass , Michael Sperling
发明人： Charlie C. Hwang , Paul D. Muench , Donald W. Plass , Michael Sperling
IPC分类号： H02J7/00 , G05F1/00
CPC分类号： H02M3/07
摘要： A system to improve a multistage charge pump may include a capacitor, a first plate carried by the capacitor, and a second plate carried by the capacitor opposite the first plate. The system may also include a clock to control charging and discharging of the capacitor. The system may further include a power supply to provide a power supply voltage across the first plate and the second plate during charging of the capacitor. The system may also include a voltage line to lift the second plate to an intermediate voltage during discharging of the capacitor. The system may further include an output line connected to the first plate during discharging of the capacitor to provide an output voltage.
摘要翻译：改进多级电荷泵的系统可以包括电容器，由电容器承载的第一板以及由电容器与第一板相对的第二板。该系统还可以包括用于控制电容器的充电和放电的时钟。该系统还可以包括电源，以在电容器充电期间在第一板和第二板两端提供电源电压。该系统还可以包括用于在电容器放电期间将第二板提升到中间电压的电压线。该系统还可以包括在电容器放电期间连接到第一板以提供输出电压的输出线。

4. 发明申请

US20080247245A1 WRITE CONTROL METHOD FOR A MEMORY ARRAY CONFIGURED WITH MULTIPLE MEMORY SUBARRAYS 失效
标题翻译：用于配置多个存储器子选项的存储器阵列的写控制方法
公开(公告)号：US20080247245A1
公开(公告)日：2008-10-09
申请号：US12139675
申请日：2008-06-16
申请人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
发明人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
IPC分类号： G11C7/22
CPC分类号： G11C11/413 , G11C7/18
摘要： Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.
摘要翻译：为配置有多个存储器子阵列的存储器阵列提供写控制电路和控制方法。写控制电路包括与多个存储器子阵列相关联的多个子阵列写控制器，每个子阵列写控制器选择性地使本地写控制信号到其相关的存储器子阵列。选择性地使能响应于接收的子阵列选择信号，其中一次只有一个子阵列选择信号是有效的。至少一些子阵列写控制器至少部分地通过交换式电源节点供电，其中，在子阵列写入控制器之间分配地实现切换的功率节点的供电。在一个示例中，通过分布在子阵列写控制器之间的多个反相器实现开关电源节点的分布式实现的供电，每个反相器具有耦合到开关电源节点的输出，以及耦合以接收全局写使能信号的输入。

5. 发明授权

US07403412B2 Integrated circuit chip with improved array stability 有权
标题翻译：集成电路芯片具有改进的阵列稳定性
公开(公告)号：US07403412B2
公开(公告)日：2008-07-22
申请号：US11782282
申请日：2007-07-24
申请人： Yuen H. Chan , Rajiv V. Joshi , Donald W. Plass
发明人： Yuen H. Chan , Rajiv V. Joshi , Donald W. Plass
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C8/08 , G11C11/412 , G11C11/417
摘要： A multi-threshold integrated circuit (IC) that may be supplied by multiple supplies, with an array of latches such as an array static random access memory (SRAM) cells and a CMOS SRAM with improved stability and reduced subthreshold leakage. Selected devices (NFETs and/or PFETs) in array cells and support logic, e.g., in the data path and in non-critical logic, are tailored for lower gate and subthreshold leakage. Normal base FETs have a base threshold and tailored FETs have a threshold above. In a multi-supply chip, circuits with tailored FETs are powered by an increased supply voltage.
摘要翻译：可以由多个电源提供的多阈值集成电路（IC），具有诸如阵列静态随机存取存储器（SRAM）单元的锁存器阵列和具有改进的稳定性和减小的亚阈值泄漏的CMOS SRAM。阵列单元中的选定器件（NFET和/或PFET）和支持逻辑，例如在数据通路和非关键逻辑中，都适用于较低的栅极和亚阈值泄漏。正常基极FET具有基极阈值，并且定制的FET具有高于阈值。在多电源芯片中，具有定制FET的电路由增加的电源电压供电。

6. 发明授权

US07380191B2 ABIST data compression and serialization for memory built-in self test of SRAM with redundancy 失效
标题翻译： ABIST数据压缩和串行化用于内存具有冗余的SRAM自检
公开(公告)号：US07380191B2
公开(公告)日：2008-05-27
申请号：US11054566
申请日：2005-02-09
申请人： James W. Dawson , Thomas J. Knips , Donald W. Plass , Kenneth J. Reyer
发明人： James W. Dawson , Thomas J. Knips , Donald W. Plass , Kenneth J. Reyer
IPC分类号： G01R31/28 , G01C29/00
CPC分类号： G11C29/1201 , G11C11/41 , G11C29/40 , G11C29/48 , G11C29/802 , G11C2029/3602
摘要： A method and apparatus for implementing ABIST data compression and serialization for memory built-in self test of SRAM with redundancy. The method includes providing detection signals asserted for one failing data out, two failing data outs, and greater than two failing data outs. The method also includes individually encoding the failing bit position of each corresponding failing data out with a binary representation value corresponding therewith. The method further includes serializing results of the providing detection signals and the individually encoding, and transmitting results of the serializing to a redundancy support register function on a single fail buss.
摘要翻译：一种实现ABIST数据压缩和串行化的方法和装置，用于具有冗余的SRAM的内存自检。该方法包括提供为一个故障数据输出断言的检测信号，两个故障数据输出和大于两个故障数据输出。该方法还包括用对应的二进制表示值来单独编码每个相应的故障数据输出的故障位位置。该方法还包括串行化提供检测信号和单独编码的结果，并将序列化的结果发送到单个故障总线上的冗余支持寄存器功能。

7. 发明授权

US07233542B2 Method and apparatus for address generation 有权
标题翻译：用于地址生成的方法和装置
公开(公告)号：US07233542B2
公开(公告)日：2007-06-19
申请号：US11056048
申请日：2005-02-11
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C8/00
CPC分类号： G11C8/10 , G11C8/16
摘要： A system for generating one or more common address signals for multi-port memory arrays. The system includes circuitry receiving one or more read address signal; circuitry receiving one or more write address signal; circuitry receiving an array clock signal; circuitry receiving one or more enable signal; and circuitry generating the common address signals in response to the enable signal, the array clock signal and one of the read address signal and write address signal.
摘要翻译：一种用于为多端口存储器阵列产生一个或多个公共地址信号的系统。该系统包括接收一个或多个读取地址信号的电路; 接收一个或多个写入地址信号的电路; 接收阵列时钟信号的电路; 接收一个或多个使能信号的电路; 以及响应于使能信号，阵列时钟信号和读地址信号和写入地址信号之一产生公共地址信号的电路。

8. 发明授权

US07102944B1 Programmable analog control of a bitline evaluation circuit 失效
公开(公告)号：US07102944B1
公开(公告)日：2006-09-05
申请号：US11056049
申请日：2005-02-11
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C7/00
CPC分类号： G11C7/18 , G11C7/12 , G11C11/419
摘要： The invention may comprise circuit for programmable control of a discharge deactivation signal when interfacing local bitlines to a global bitline or other circuit. The invention may also comprise a method for programmable ground circuit control for control of a discharge signal deactivation when interfacing local bitlines to a global bitline via a bitline evaluation discharge device comprising: providing input logic states to inputs of a controller circuit; outputting an adjustable ground value from the controller circuit; and controlling the bitline evaluation discharge device with the adjustable ground value.

9. 发明申请

US20130155787A1 Digital Voltage Boost Circuit 有权
标题翻译：数字电压升压电路
公开(公告)号：US20130155787A1
公开(公告)日：2013-06-20
申请号：US13326727
申请日：2011-12-15
申请人： James W. Dawson , Noam Jungmann , Elazar Kachir , Udi Nir , Donald W. Plass
发明人： James W. Dawson , Noam Jungmann , Elazar Kachir , Udi Nir , Donald W. Plass
IPC分类号： G11C5/14 , G05F3/02
CPC分类号： G11C5/147
摘要： A digital voltage boost circuit, optionally working in parallel with an analog voltage regulator, periodically injects a constant amount of current each cycle into the bit line of a high density memory array to eliminate the bias voltage reduction which would otherwise occur. This results in a much faster recovery time and reduces the semiconductor real estate required. A pulse generator in the boost circuit generates one or more current modulation signals which control corresponding current supply devices in a current source. The boost circuit drives a constant amount of current to the bias voltage node each memory cycle.
摘要翻译：可选地与模拟电压调节器并联的数字升压电路周期性地将恒定量的电流每周期注入高密度存储器阵列的位线，以消除否则将发生的偏置电压降低。这导致恢复时间快得多，并减少了所需的半导体房地产。升压电路中的脉冲发生器产生一个或多个电流调制信号，其控制电流源中的相应的电流供应装置。升压电路驱动每个存储周期对偏置电压节点的恒定电流量。

10. 发明申请

US20130114361A1 SENSE AMPLIFIER HAVING AN ISOLATED PRE-CHARGE ARCHITECTURE, A MEMORY CIRCUIT INCORPORATING SUCH A SENSE AMPLIFIER AND ASSOCIATED METHODS 失效
标题翻译：具有隔离预充电结构的感测放大器，包含这种感测放大器的记忆电路及相关方法
公开(公告)号：US20130114361A1
公开(公告)日：2013-05-09
申请号：US13288424
申请日：2011-11-03
申请人： John E. Barth, JR. , Donald W. Plass , Adis Vehabovic
发明人： John E. Barth, JR. , Donald W. Plass , Adis Vehabovic
IPC分类号： G11C7/06 , H03F3/16
CPC分类号： G11C7/065 , G11C11/4091
摘要： Disclosed are a sense amplifier and a memory circuit that incorporates it. The amplifier comprises cross-coupled inverters, each with a pull-down transistor and a pull-up transistor connected in series. One inverter has a voltage-controlled switch controlling the electrical connection between drain nodes of the transistors. During a read operation, the pull-up transistor drain node is pre-charged high and the pull-down transistor drain node receives an input signal. The switch is tripped, thereby making the electrical connection only when the voltage at the pull-down transistor drain node is less than the switch's trip voltage. In this case, the sense node discharges to the same level as the input signal. Otherwise, the switch prevents the electrical connection and the sense node remains high. The trip voltage depends on a reference voltage, which can be variable, thereby allowing the sensitivity of the sense amplifier to be selectively adjusted. Also disclosed are associated methods.
摘要翻译：公开了一种读出放大器和包含它的存储器电路。放大器包括交叉耦合的反相器，每个具有串联的下拉晶体管和上拉晶体管。一个逆变器具有控制晶体管的漏极节点之间的电连接的电压控制开关。在读操作期间，上拉晶体管漏极节点被预充电为高电平，并且下拉晶体管漏极节点接收输入信号。开关跳闸，从而仅在下拉式晶体管漏极节点处的电压小于开关跳闸电压时进行电气连接。在这种情况下，感测节点放电到与输入信号相同的电平。否则，交换机可防止电气连接，并且感测节点保持高电平。跳闸电压取决于可以变化的参考电压，从而允许选择性地调节读出放大器的灵敏度。还公开了相关联的方法。

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