专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080247245A1 WRITE CONTROL METHOD FOR A MEMORY ARRAY CONFIGURED WITH MULTIPLE MEMORY SUBARRAYS 失效
标题翻译：用于配置多个存储器子选项的存储器阵列的写控制方法
公开(公告)号：US20080247245A1
公开(公告)日：2008-10-09
申请号：US12139675
申请日：2008-06-16
申请人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
发明人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
IPC分类号： G11C7/22
CPC分类号： G11C11/413 , G11C7/18
摘要： Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.
摘要翻译：为配置有多个存储器子阵列的存储器阵列提供写控制电路和控制方法。写控制电路包括与多个存储器子阵列相关联的多个子阵列写控制器，每个子阵列写控制器选择性地使本地写控制信号到其相关的存储器子阵列。选择性地使能响应于接收的子阵列选择信号，其中一次只有一个子阵列选择信号是有效的。至少一些子阵列写控制器至少部分地通过交换式电源节点供电，其中，在子阵列写入控制器之间分配地实现切换的功率节点的供电。在一个示例中，通过分布在子阵列写控制器之间的多个反相器实现开关电源节点的分布式实现的供电，每个反相器具有耦合到开关电源节点的输出，以及耦合以接收全局写使能信号的输入。

2. 发明授权

US07283417B2 Write control circuitry and method for a memory array configured with multiple memory subarrays 失效
标题翻译：用于配置有多个存储器子阵列的存储器阵列的写控制电路和方法
公开(公告)号：US07283417B2
公开(公告)日：2007-10-16
申请号：US11054059
申请日：2005-02-09
申请人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
发明人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
IPC分类号： G11C8/00
CPC分类号： G11C11/413 , G11C7/18
摘要： Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.
摘要翻译：为配置有多个存储器子阵列的存储器阵列提供写控制电路和控制方法。写控制电路包括与多个存储器子阵列相关联的多个子阵列写控制器，每个子阵列写控制器选择性地使本地写控制信号到其相关的存储器子阵列。选择性地使能响应于接收的子阵列选择信号，其中一次只有一个子阵列选择信号是有效的。至少一些子阵列写控制器至少部分地通过交换式电源节点供电，其中，在子阵列写入控制器之间分配地实现切换的功率节点的供电。在一个示例中，通过分布在子阵列写控制器之间的多个反相器实现开关电源节点的分布式实现的供电，每个反相器具有耦合到开关电源节点的输出，以及耦合以接收全局写使能信号的输入。

3. 发明授权

US07688650B2 Write control method for a memory array configured with multiple memory subarrays 失效
标题翻译：用多个存储器子阵列配置的存储器阵列的写控制方法
公开(公告)号：US07688650B2
公开(公告)日：2010-03-30
申请号：US12139675
申请日：2008-06-16
申请人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
发明人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J. Reyer
IPC分类号： G11C7/00 , G11C7/22
CPC分类号： G11C11/413 , G11C7/18
摘要： Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.
摘要翻译：为配置有多个存储器子阵列的存储器阵列提供写控制电路和控制方法。写控制电路包括与多个存储器子阵列相关联的多个子阵列写控制器，每个子阵列写控制器选择性地使本地写控制信号到其相关的存储器子阵列。选择性地使能响应于接收的子阵列选择信号，其中一次只有一个子阵列选择信号是有效的。至少一些子阵列写控制器至少部分地通过交换式电源节点供电，其中，在子阵列写入控制器之间分配地实现切换的功率节点的供电。在一个示例中，通过分布在子阵列写控制器之间的多个反相器实现开关电源节点的分布式实现的供电，每个反相器具有耦合到开关电源节点的输出，以及耦合以接收全局写使能信号的输入。

4. 发明授权

US07471590B2 Write control circuitry and method for a memory array configured with multiple memory subarrays 失效
标题翻译：用于配置有多个存储器子阵列的存储器阵列的写控制电路和方法
公开(公告)号：US07471590B2
公开(公告)日：2008-12-30
申请号：US11762833
申请日：2007-06-14
申请人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J Reyer
发明人： John D. Davis , Paul A. Bunce , Donald W. Plass , Kenneth J Reyer
IPC分类号： G11C8/00
CPC分类号： G11C11/413 , G11C7/18
摘要： Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.
摘要翻译：为配置有多个存储器子阵列的存储器阵列提供写控制电路和控制方法。写控制电路包括与多个存储器子阵列相关联的多个子阵列写控制器，每个子阵列写控制器选择性地使本地写控制信号到其相关的存储器子阵列。选择性地使能响应于接收的子阵列选择信号，其中一次只有一个子阵列选择信号是有效的。至少一些子阵列写控制器至少部分地通过交换式电源节点供电，其中，在子阵列写入控制器之间分配地实现切换的功率节点的供电。在一个示例中，通过分布在子阵列写控制器之间的多个反相器实现开关电源节点的分布式实现的供电，每个反相器具有耦合到开关电源节点的输出，以及耦合以接收全局写使能信号的输入。

5. 发明授权

US07085173B1 Write driver circuit for memory array 失效
标题翻译：为存储器阵列写入驱动电路
公开(公告)号：US07085173B1
公开(公告)日：2006-08-01
申请号：US11054270
申请日：2005-02-09
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C7/10
CPC分类号： G11C7/1048 , G11C7/1078 , G11C7/1096
摘要： Embodiments of the invention include a circuit for interfacing local bitlines to a global bitline. The circuit includes an interface line coupled to a local bitline through a local bitline device. A global output device has an input coupled to the interface line and an output coupled to the global bitline. A clamping device is coupled to the interface line, the clamping device coupling the interface line to ground in response to a data in signal. A memory having the circuit is also disclosed.
摘要翻译：本发明的实施例包括用于将本地位线与全局位线接口的电路。该电路包括通过本地位线装置耦合到本地位线的接口线。全局输出设备具有耦合到接口线的输入和耦合到全局位线的输出。夹紧装置耦合到接口线，夹紧装置响应于信号中的数据将接口线耦合到地。还公开了一种具有该电路的存储器。

6. 发明授权

US07023759B1 System and method for synchronizing memory array signals 失效
标题翻译：用于同步存储器阵列信号的系统和方法
公开(公告)号：US07023759B1
公开(公告)日：2006-04-04
申请号：US11054495
申请日：2005-02-09
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C8/18
CPC分类号： G11C11/418 , G11C8/08 , G11C8/18
摘要： A method of generating access signals for a memory array. The method includes receiving a synchronization signal and generating a wordline select signal in response to the synchronization signal. A local precharge signal is generated in response to the synchronization signal. A precharge signal is generated in response to the synchronization signal, the precharge signal being a row signal for regulating memory array read operations. A write signal is generated in response to the synchronization signal, the write signal being a row signal for regulating memory array write operations.
摘要翻译：一种产生存储器阵列的存取信号的方法。该方法包括接收同步信号并响应于同步信号产生字线选择信号。响应于同步信号产生局部预充电信号。响应于同步信号产生预充电信号，预充电信号是用于调节存储器阵列读取操作的行信号。响应于同步信号产生写入信号，写入信号是用于调节存储器阵列写入操作的行信号。

7. 发明授权

US07233542B2 Method and apparatus for address generation 有权
标题翻译：用于地址生成的方法和装置
公开(公告)号：US07233542B2
公开(公告)日：2007-06-19
申请号：US11056048
申请日：2005-02-11
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C8/00
CPC分类号： G11C8/10 , G11C8/16
摘要： A system for generating one or more common address signals for multi-port memory arrays. The system includes circuitry receiving one or more read address signal; circuitry receiving one or more write address signal; circuitry receiving an array clock signal; circuitry receiving one or more enable signal; and circuitry generating the common address signals in response to the enable signal, the array clock signal and one of the read address signal and write address signal.
摘要翻译：一种用于为多端口存储器阵列产生一个或多个公共地址信号的系统。该系统包括接收一个或多个读取地址信号的电路; 接收一个或多个写入地址信号的电路; 接收阵列时钟信号的电路; 接收一个或多个使能信号的电路; 以及响应于使能信号，阵列时钟信号和读地址信号和写入地址信号之一产生公共地址信号的电路。

8. 发明授权

US07102944B1 Programmable analog control of a bitline evaluation circuit 失效
公开(公告)号：US07102944B1
公开(公告)日：2006-09-05
申请号：US11056049
申请日：2005-02-11
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C7/00
CPC分类号： G11C7/18 , G11C7/12 , G11C11/419
摘要： The invention may comprise circuit for programmable control of a discharge deactivation signal when interfacing local bitlines to a global bitline or other circuit. The invention may also comprise a method for programmable ground circuit control for control of a discharge signal deactivation when interfacing local bitlines to a global bitline via a bitline evaluation discharge device comprising: providing input logic states to inputs of a controller circuit; outputting an adjustable ground value from the controller circuit; and controlling the bitline evaluation discharge device with the adjustable ground value.

9. 发明授权

US07099203B1 Circuit and method for writing a binary value to a memory cell 失效
标题翻译：将二进制值写入存储单元的电路和方法
公开(公告)号：US07099203B1
公开(公告)日：2006-08-29
申请号：US11057281
申请日：2005-02-11
申请人： Paul A. Bunce , John D. Davis , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Donald W. Plass
IPC分类号： G11C7/10 , G11C11/00
CPC分类号： G11C7/22 , G11C2207/2263
摘要： A circuit and a method for writing a binary value to a memory cell are provided. The circuit includes a first field-effect transistor having a first drain, a first drain, and a first gate operably coupled between the first drain and the first source. The first drain is operably coupled to a first memory cell. The first gate configured to receive a first data signal. The circuit further includes a second field-effect transistor having a second drain, a second source, and a second gate operably coupled between the second drain and the second source. The drain source is operably coupled to the first memory cell. The second gate is configured to receive a second data signal. The circuit further includes a first signal inverter having a first input terminal and a first output terminal. The first output terminal is operably coupled to both of the first and second sources. The first signal inverter is configured to output a first control signal on the first output terminal when the first input terminal receives a second control signal. When the first control signal has a second logic level and the first data signal has a first logic level and the second data signal has the second logic level, the first and second field-effect transistors induce the first memory cell to store a first binary value.
摘要翻译：提供了一种将二进制值写入存储单元的电路和方法。电路包括具有第一漏极，第一漏极和第一栅极的第一场效应晶体管，其可操作地耦合在第一漏极和第一源极之间。第一漏极可操作地耦合到第一存储器单元。第一门被配置为接收第一数据信号。电路还包括第二场效应晶体管，其具有可操作地耦合在第二漏极和第二源之间的第二漏极，第二源极和第二栅极。漏源可操作地耦合到第一存储单元。第二门被配置为接收第二数据信号。电路还包括具有第一输入端和第一输出端的第一信号反相器。第一输出端子可操作地耦合到第一和第二源两者。第一信号反相器被配置为当第一输入端子接收到第二控制信号时，在第一输出端子上输出第一控制信号。当第一控制信号具有第二逻辑电平且第一数据信号具有第一逻辑电平且第二数据信号具有第二逻辑电平时，第一和第二场效应晶体管感应第一存储器单元以存储第一二进制值。

10. 发明授权

US07266737B2 Method for enabling scan of defective ram prior to repair 有权
标题翻译：修复前能够对有缺陷的公牛进行扫描的方法
公开(公告)号：US07266737B2
公开(公告)日：2007-09-04
申请号：US11180416
申请日：2005-07-13
申请人： Paul A. Bunce , John D. Davis , Patrick J. Meaney , Donald W. Plass
发明人： Paul A. Bunce , John D. Davis , Patrick J. Meaney , Donald W. Plass
IPC分类号： G11C29/00
CPC分类号： G11C29/48 , G01R31/318533 , G11C29/88 , G11C2029/3202
摘要： A semiconductor memory circuit enabling replacement of defective memory elements and associated circuitry with non-defective spare elements of the RAM and associated circuitry, is scanned to enable replacement of a defective RAM element prior to repair of the RAM. A set of set/reset latches are coupled to receive the signal from the memory elements, and a multiplexer control circuit coupled to receive a shift signal and a ram_inhibit signal from a multiplexer to provide specific input signals to the multiplexer components. When a scan operation begins an active clock signal sets a set/reset latch to ram_inhibit mode and this blocks the memory elements from influencing the state of memory output latches, whereby when an memory operation begins, an active clocking signal will reset the set/reset latch into system mode to cause the multiplexers pass appropriate signals from the memory elements to the output latches, and the spare memory element is activated to replace a defective memory element.
摘要翻译：扫描能够用RAM和关联电路的无缺陷备用元件替换缺陷存储器元件和相关电路的半导体存储器电路，以便在修复RAM之前更换有缺陷的RAM元件。耦合一组置位/复位锁存器以接收来自存储器元件的信号，以及多路复用器控制电路，其被耦合以从多路复用器接收移位信号和ram_inhibit信号以向多路复用器部件提供特定的输入信号。当扫描操作开始时，活动时钟信号将设置/复位锁存器设置为ram_inhibit模式，并且阻止存储器元件影响存储器输出锁存器的状态，由此当存储器操作开始时，有源时钟信号将复位置位/复位锁存到系统模式以使多路复用器将适当的信号从存储器元件传递到输出锁存器，并且备用存储器元件被激活以替换有缺陷的存储器元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式