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    • 1. 发明授权
    • Chemical-mechanical polishing pad conditioner
    • 化学机械抛光垫调理剂
    • US06500054B1
    • 2002-12-31
    • US09590576
    • 2000-06-08
    • William H. MaAdam D. Ticknor
    • William H. MaAdam D. Ticknor
    • B24B100
    • B24B53/017B24B37/26B24B53/12
    • A chemical-mechanical polishing (CMP) pad conditioner. The conditioner has a non-uniform conditioning surface with a plurality of conditioning elements. The non-uniform surface comprises a first section having a first cutting volume per unit width and a second section having a second cutting volume per unit width that is different from the first cutting volume per unit width. The difference in cutting volume may be provided by different projected widths of the individual conditioning elements, by a difference in the linear density between the two sections, or by a difference in the cutting depth. A CMP tool comprising a polishing pad, a conditioning pad having the disclosed structure, and a mechanism for moving the polishing pad relative to the pad conditioner is also provided. A method is further provided for uniformly conditioning a CMP pad using a conditioner having the structure described.
    • 化学机械抛光(CMP)垫调节剂。 调理剂具有不均匀的调节表面和多个调理元件。 不均匀表面包括具有每单位宽度的第一切割体积的第一部分和具有与每单位宽度的第一切割体积不同的每单位宽度的第二切割体积的第二部分。 切割体积的差异可以通过各个调理元件的不同投影宽度,两个部分之间的线密度的差异或切割深度的差异来提供。 还提供了一种CMP工具,其包括抛光垫,具有所公开的结构的调节垫以及用于相对于垫调节器移动抛光垫的机构。 还提供了一种使用具有所述结构的调理器均匀调理CMP垫的方法。
    • 4. 发明授权
    • Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
    • 具有凸起的外部基极的双极晶体管在集成的BiCMOS电路中制造
    • US06492238B1
    • 2002-12-10
    • US09887310
    • 2001-06-22
    • David C. AhlgrenGregory G. FreemanFeng-Yi HuangAdam D. Ticknor
    • David C. AhlgrenGregory G. FreemanFeng-Yi HuangAdam D. Ticknor
    • H01L2100
    • H01L29/66287H01L21/8249H01L27/0623
    • A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is provided in the bipolar area. A base oxide is formed across, and a sacrificial emitter stack silicon layer is deposited on, both the CMOS and bipolar areas. A photoresist is applied to protect the bipolar area and the structure is etched to remove the sacrificial layer from the CMOS area only such that the top surface of the sacrificial layer on the bipolar area is substantially flush with the top surface of the CMOS area. Finally, a polish stop layer is deposited having a substantially flat top surface across both the CMOS and bipolar areas suitable for subsequent chemical-mechanical polishing (CMP) to form the raised extrinsic base.
    • 用于形成具有凸起的外部基极,发射极和与具有栅极的CMOS电路集成的集电极的双极晶体管的工艺。 提供具有CMOS和双极区域的中间半导体结构。 在双极区域内提供本征基层。 基底氧化物跨越形成,牺牲发射极堆叠硅层沉积在CMOS和双极区两者上。 施加光致抗蚀剂以保护双极区域,并且蚀刻该结构以从CMOS区域去除牺牲层,使得双极区域上的牺牲层的顶表面基本上与CMOS区域的顶表面齐平。 最后,沉积抛光停止层,其具有穿过适于随后的化学机械抛光(CMP)的CMOS和双极区域的基本平坦的顶表面,以形成凸起的外在基体。