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1. 发明授权

US06500054B1 Chemical-mechanical polishing pad conditioner 失效
标题翻译：化学机械抛光垫调理剂
公开(公告)号：US06500054B1
公开(公告)日：2002-12-31
申请号：US09590576
申请日：2000-06-08
申请人： William H. Ma , Adam D. Ticknor
发明人： William H. Ma , Adam D. Ticknor
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/26 , B24B53/12
摘要： A chemical-mechanical polishing (CMP) pad conditioner. The conditioner has a non-uniform conditioning surface with a plurality of conditioning elements. The non-uniform surface comprises a first section having a first cutting volume per unit width and a second section having a second cutting volume per unit width that is different from the first cutting volume per unit width. The difference in cutting volume may be provided by different projected widths of the individual conditioning elements, by a difference in the linear density between the two sections, or by a difference in the cutting depth. A CMP tool comprising a polishing pad, a conditioning pad having the disclosed structure, and a mechanism for moving the polishing pad relative to the pad conditioner is also provided. A method is further provided for uniformly conditioning a CMP pad using a conditioner having the structure described.
摘要翻译：化学机械抛光（CMP）垫调节剂。调理剂具有不均匀的调节表面和多个调理元件。不均匀表面包括具有每单位宽度的第一切割体积的第一部分和具有与每单位宽度的第一切割体积不同的每单位宽度的第二切割体积的第二部分。切割体积的差异可以通过各个调理元件的不同投影宽度，两个部分之间的线密度的差异或切割深度的差异来提供。还提供了一种CMP工具，其包括抛光垫，具有所公开的结构的调节垫以及用于相对于垫调节器移动抛光垫的机构。还提供了一种使用具有所述结构的调理器均匀调理CMP垫的方法。

2. 发明授权

US08594826B2 Method and system for evaluating a machine tool operating characteristics 失效
标题翻译：用于评估机床操作特性的方法和系统
公开(公告)号：US08594826B2
公开(公告)日：2013-11-26
申请号：US13608032
申请日：2012-09-10
申请人： Ehud Aharoni , Robert J. Baseman , Ramona Kei , Oded Margalit , Kevin Mackey , Michal Rosen-Zvi , Raminderpal Singh , Noam Slonim , Hong Lin , Fateh A. Tipu , Adam D. Ticknor , Timothy M. McCormack
发明人： Ehud Aharoni , Robert J. Baseman , Ramona Kei , Oded Margalit , Kevin Mackey , Michal Rosen-Zvi , Raminderpal Singh , Noam Slonim , Hong Lin , Fateh A. Tipu , Adam D. Ticknor , Timothy M. McCormack
IPC分类号： G06F19/00
CPC分类号： G05B23/0216 , G05B23/0229 , G05B2219/32191 , G05B2219/32194 , G05B2219/45031 , G05B2219/50065 , Y02P90/22 , Y02P90/86 , Y10T409/309408
摘要： A method, a system and a computer program product suitable for use in a manufacturing environment comprising a multiplicity of nominally identical independent tools. A computing device generates a multi dimensional array of process trace data derived from at least one of the independent tools, wherein, the array includes data representing a first dimension comprising a list of steps in a manufacturing recipe and data representing a second dimension comprising a list of a set of sensors generating measurements from at least one of the independent tools. The computing device conducts an analysis on at least one preselected subset of the multi dimensional array for the purpose of evaluating at least one operating characteristic of at least one of the independent tools. The computing device presents results of the analysis via a set of hierarchically linked and browseable graphics.
摘要翻译：一种适用于制造环境的方法，系统和计算机程序产品，包括多个名义上相同的独立工具。计算设备生成从至少一个独立工具导出的过程跟踪数据的多维阵列，其中，所述阵列包括表示包括制造配方中的步骤列表的第一维度的数据和表示包括列表的第二维度的数据一组传感器从至少一个独立工具产生测量值。为了评估至少一个独立工具的至少一个操作特征，计算设备对多维阵列的至少一个预选子集进行分析。计算设备通过一组分层链接和可浏览的图形呈现分析结果。

3. 发明授权

US06325696B1 Piezo-actuated CMP carrier 失效
标题翻译：压电式CMP载体
公开(公告)号：US06325696B1
公开(公告)日：2001-12-04
申请号：US09395393
申请日：1999-09-13
申请人： Karl E. Boggs , Kenneth M. Davis , William F. Landers , Michael F. Lofaro , Adam D. Ticknor , Ronald D. Fiege
发明人： Karl E. Boggs , Kenneth M. Davis , William F. Landers , Michael F. Lofaro , Adam D. Ticknor , Ronald D. Fiege
IPC分类号： B24B4900
CPC分类号： B24B37/30 , B24B37/32 , B24B49/12 , B24B49/16
摘要： A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.
摘要翻译：化学机械抛光（CMP）控制系统控制正在抛光的半导体晶片背面的压力分布。该系统包括具有用于支撑半导体晶片的载体的CMP装置。载体包括多个双功能压电致动器。致动器感测半导体晶片上的压力变化，并且可以单独控制。控制器连接到致动器，用于监测感测的压力变化并控制致动器以提供横跨半导体晶片的受控压力分布。

4. 发明授权

US06492238B1 Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit 有权
标题翻译：具有凸起的外部基极的双极晶体管在集成的BiCMOS电路中制造
公开(公告)号：US06492238B1
公开(公告)日：2002-12-10
申请号：US09887310
申请日：2001-06-22
申请人： David C. Ahlgren , Gregory G. Freeman , Feng-Yi Huang , Adam D. Ticknor
发明人： David C. Ahlgren , Gregory G. Freeman , Feng-Yi Huang , Adam D. Ticknor
IPC分类号： H01L2100
CPC分类号： H01L29/66287 , H01L21/8249 , H01L27/0623
摘要： A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is provided in the bipolar area. A base oxide is formed across, and a sacrificial emitter stack silicon layer is deposited on, both the CMOS and bipolar areas. A photoresist is applied to protect the bipolar area and the structure is etched to remove the sacrificial layer from the CMOS area only such that the top surface of the sacrificial layer on the bipolar area is substantially flush with the top surface of the CMOS area. Finally, a polish stop layer is deposited having a substantially flat top surface across both the CMOS and bipolar areas suitable for subsequent chemical-mechanical polishing (CMP) to form the raised extrinsic base.
摘要翻译：用于形成具有凸起的外部基极，发射极和与具有栅极的CMOS电路集成的集电极的双极晶体管的工艺。提供具有CMOS和双极区域的中间半导体结构。在双极区域内提供本征基层。基底氧化物跨越形成，牺牲发射极堆叠硅层沉积在CMOS和双极区两者上。施加光致抗蚀剂以保护双极区域，并且蚀刻该结构以从CMOS区域去除牺牲层，使得双极区域上的牺牲层的顶表面基本上与CMOS区域的顶表面齐平。最后，沉积抛光停止层，其具有穿过适于随后的化学机械抛光（CMP）的CMOS和双极区域的基本平坦的顶表面，以形成凸起的外在基体。

5. 发明授权

US5267418A Confined water fixture for holding wafers undergoing chemical-mechanical polishing 失效
标题翻译：用于保持晶片进行化学机械抛光的密封水夹具
公开(公告)号：US5267418A
公开(公告)日：1993-12-07
申请号：US890041
申请日：1992-05-27
申请人： James E. Currie , Ronald N. Schulz , Adam D. Ticknor
发明人： James E. Currie , Ronald N. Schulz , Adam D. Ticknor
IPC分类号： B23Q3/08 , B24B37/30 , H01L21/304 , B24B41/06
CPC分类号： B24B37/30 , B23Q3/082
摘要： A wafer polishing fixture is disclosed containing a first liquid film confined by a non-porous but flexible enclosure for distributing evenly the applied polishing forces across the surface of a wafer supported by the confined liquid. The fixture comprises a flexible, non-porous template with a pocket for receiving a wafer to be polished. A washer is placed between a carrier and the template pocket. A film of water fills the bottom of the pocket and is confined with the aid of the washer and by an overlying porous pad extending across the pocket and having a non-porous sheath facing the liquid. A second liquid film saturates and covers the upper surface of the pad. The wafer to be polished floats upon the second liquid film within the pocket.

6. 发明授权

US06667521B2 Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit 失效
公开(公告)号：US06667521B2
公开(公告)日：2003-12-23
申请号：US10283739
申请日：2002-10-29
申请人： David C. Ahlgren , Gregory G. Freeman , Feng Yi Huang , Adam D. Ticknor
发明人： David C. Ahlgren , Gregory G. Freeman , Feng Yi Huang , Adam D. Ticknor
IPC分类号： H01L2976
CPC分类号： H01L29/66287 , H01L21/8249 , H01L27/0623
摘要： A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is provided in the bipolar area. A base oxide is formed across, and a sacrificial emitter stack silicon layer is deposited on, both the CMOS and bipolar areas. A photoresist is applied to protect the bipolar area and the structure is etched to remove the sacrificial layer from the CMOS area only such that the top surface of the sacrificial layer on the bipolar area is substantially flush with the top surface of the CMOS area. Finally, a polish stop layer is deposited having a substantially flat top surface across both the CMOS and bipolar areas suitable for subsequent chemical-mechanical polishing (CMP) to form the raised extrinsic base.

7. 发明授权

US06296717B1 Regeneration of chemical mechanical polishing pads in-situ 失效
标题翻译：化学机械抛光垫原位再生
公开(公告)号：US06296717B1
公开(公告)日：2001-10-02
申请号：US09330657
申请日：1999-06-11
申请人： Adam D. Ticknor , Karl E. Boggs , Kenneth M. Davis , William F. Landers , Michael L. Passow
发明人： Adam D. Ticknor , Karl E. Boggs , Kenneth M. Davis , William F. Landers , Michael L. Passow
IPC分类号： C23G136
CPC分类号： B24B37/042 , H01L21/30625
摘要： An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.
摘要翻译：一种用于再生化学机械抛光垫的原位方法，其包括以下步骤：通过在抛光表面上分配液体可模制材料（例如蜡，聚合物或水）形成抛光垫，并通过降低温度来固化液体材料，使可模塑材料硬化; 在抛光垫上分配浆料; 用浆料和抛光垫的组合抛光半导体晶片的表面; 并原位再生抛光垫。该方法快速，容易和重复地重现和刷新其上抛光半导体晶片的表面。抛光垫还可以包括嵌入其中的磨料以增强其抛光能力。

8. 发明授权

US08285414B2 Method and system for evaluating a machine tool operating characteristics 有权
标题翻译：用于评估机床操作特性的方法和系统
公开(公告)号：US08285414B2
公开(公告)日：2012-10-09
申请号：US12415348
申请日：2009-03-31
申请人： Ehud Aharoni , Robert J. Baseman , Ramona Kei , Oded Margalit , Kevin Mackey , Michal Rosen-Zvi , Raminderpal Singh , Noam Slonim , Hong Lin , Fateh A. Tipu , Adam D. Ticknor , Timothy M. McCormack
发明人： Ehud Aharoni , Robert J. Baseman , Ramona Kei , Oded Margalit , Kevin Mackey , Michal Rosen-Zvi , Raminderpal Singh , Noam Slonim , Hong Lin , Fateh A. Tipu , Adam D. Ticknor , Timothy M. McCormack
IPC分类号： G06F19/00
CPC分类号： G05B23/0216 , G05B23/0229 , G05B2219/32191 , G05B2219/32194 , G05B2219/45031 , G05B2219/50065 , Y02P90/22 , Y02P90/86 , Y10T409/309408
摘要： A method and system for evaluating a performance of a semiconductor manufacturing tool while manufacturing microelectronic devices are disclosed. At least one report is generated based on executions of at least one statistical test. The report includes at least one heat map having rows that correspond to sensors, columns that correspond to trace data obtained during recipe steps, and cells at the intersection of the rows and the columns. At least one sensor in the tool obtains trace data of a recipe step while manufacturing at least one microelectronic device. A computing device analyzes the obtained trace data to determine a level of operational significance found in the data and assigns a score to the trace data that indicates a level of operational significance. Then, the computing device places the score in a corresponding cell of the heat map. A user uses the cell for evaluating the tool performance.
摘要翻译：公开了一种用于在制造微电子器件的同时评估半导体制造工具的性能的方法和系统。至少根据执行至少一项统计测试生成一份报告。该报告包括至少一个具有与传感器对应的行的热图，对应于配方步骤期间获得的跟踪数据的列，以及行和列的交叉点处的单元格。工具中至少有一个传感器获得配方步骤的痕迹数据，同时制造至少一个微电子器件。计算设备分析所获得的跟踪数据以确定在数据中发现的操作意义的水平，并向指示操作意义水平的跟踪数据分配分数。然后，计算设备将分数放置在热图的相应单元中。用户使用单元格来评估刀具性能。

9. 发明授权

US07556972B2 Detection and characterization of SiCOH-based dielectric materials during device fabrication 失效
标题翻译：在器件制造过程中SiCOH基介电材料的检测和表征
公开(公告)号：US07556972B2
公开(公告)日：2009-07-07
申请号：US11626975
申请日：2007-01-25
申请人： Manoj Balachandran , James A. Hagan , Ben Kim , Deoram Persaud , Adam D. Ticknor , Wei-tsu Tseng
发明人： Manoj Balachandran , James A. Hagan , Ben Kim , Deoram Persaud , Adam D. Ticknor , Wei-tsu Tseng
IPC分类号： G01R31/26 , H01L21/00 , H01L21/302
CPC分类号： B24B57/02 , B24B37/04
摘要： Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically analyzing a fluid stream generated during a process employed for device fabrication, e.g., during a wet strip, a chemical mechanical planarization process and the like.
摘要翻译：公开了用于在集成电路制造期间检测和表征SiCOH基介电材料的方法和装置。这些方法通常包括色谱分析在用于器件制造的工艺中产生的流体流，例如在湿条，化学机械平面化工艺等期间。

10. 发明申请

US20080182335A1 DETECTION AND CHARACTERIZATION OF SiCOH-BASED DIELECTRIC MATERIALS DURING DEVICE FABRICATION 失效
标题翻译：器件制造过程中SiCOH基介电材料的检测与表征
公开(公告)号：US20080182335A1
公开(公告)日：2008-07-31
申请号：US11626975
申请日：2007-01-25
申请人： Manoj Balachandran , James A. Hagan , Ben Kim , Deoram Persaud , Adam D. Ticknor , Wei-Tsu Tseng
发明人： Manoj Balachandran , James A. Hagan , Ben Kim , Deoram Persaud , Adam D. Ticknor , Wei-Tsu Tseng
IPC分类号： H01L21/66 , B24B3/00
CPC分类号： B24B57/02 , B24B37/04
摘要： Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically analyzing a fluid stream generated during a process employed for device fabrication, e.g., during a wet strip, a chemical mechanical planarization process and the like.
摘要翻译：公开了用于在集成电路制造期间检测和表征SiCOH基介电材料的方法和装置。这些方法通常包括色谱分析在用于器件制造的工艺中产生的流体流，例如在湿条，化学机械平面化工艺等期间。

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