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1. 发明授权

US4767723A Process for making self-aligning thin film transistors 失效
标题翻译：制造自对准薄膜晶体管的工艺
公开(公告)号：US4767723A
公开(公告)日：1988-08-30
申请号：US115470
申请日：1987-10-30
申请人： William D. Hinsberg, III , Webster E. Howard , Carlton G. Willson
发明人： William D. Hinsberg, III , Webster E. Howard , Carlton G. Willson
IPC分类号： H01L21/027 , H01L21/30 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/265 , H01L21/44 , H01L21/465 , H01L21/48
CPC分类号： G03F7/095 , H01L21/0274 , H01L29/42384 , H01L29/4908 , H01L29/66765 , Y10S148/137 , Y10S438/928
摘要： A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.

2. 发明授权

US5055439A Photoacid generating composition and sensitizer therefor 失效
标题翻译：光致发光组合物及其敏化剂
公开(公告)号：US5055439A
公开(公告)日：1991-10-08
申请号：US458048
申请日：1989-12-27
申请人： Robert D. Allen , William D. Hinsberg, III. , Logan L. Simpson , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
发明人： Robert D. Allen , William D. Hinsberg, III. , Logan L. Simpson , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
IPC分类号： C08F8/00 , C08G59/00 , C08G59/18 , C08G59/68 , G03C1/675 , G03F7/004 , G03F7/031 , G03F7/039 , H01L21/027
CPC分类号： G03F7/031
摘要： A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.

3. 发明申请

US20080305440A1 APPARATUS FOR FABRICATING NANOSCALE PATTERNS IN LIGHT CURABLE COMPOSITIONS USING AN ELECTRIC FIELD 审中-公开
标题翻译：使用电场制作光固化组合物中的纳米尺度图案的装置
公开(公告)号：US20080305440A1
公开(公告)日：2008-12-11
申请号：US12052099
申请日：2008-03-20
申请人： Carlton G. Willson , Sidlgata V. Sreenivasan , Roger T. Bonnecaze
发明人： Carlton G. Willson , Sidlgata V. Sreenivasan , Roger T. Bonnecaze
IPC分类号： G03F7/20
CPC分类号： B81C1/0046 , B05D1/40 , B05D3/067 , B05D3/145 , B29C43/003 , B29C2043/025 , B29C2043/3211 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention is directed to an apparatus for patterning a liquid on a substrate, with the apparatus including, a template having a pair of spaced-apart recessions with a protrusion disposed therebetween, with the protrusion being spaced-apart from the substrate a first distance and each of the pair of spaced-apart recessions being spaced-apart from the substrate a second distance, with the second distance being greater than the first distance; and a source of voltage in electrical communication with the template to produce an electric field between the template and the substrate, with a strength of the electrical field being inversely proportional to the first and second distances.
摘要翻译：本发明涉及一种用于在衬底上图案化液体的装置，其中该装置包括：具有一对间隔开的凹陷的模板，其中突出物设置在其间，突起与衬底间隔开第一距离并且所述一对间隔开的凹部中的每一个与所述衬底间隔开第二距离，所述第二距离大于所述第一距离; 以及与模板电连通的电压源，以在模板和衬底之间产生电场，其中电场的强度与第一和第二距离成反比。

4. 发明授权

US5807947A Copolymers 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene 失效
标题翻译：共聚物4-羟基苯乙烯和烷基取代的-4-羟基苯乙烯
公开(公告)号：US5807947A
公开(公告)日：1998-09-15
申请号：US277687
申请日：1994-07-20
申请人： Richard Vicari , Douglas J. Gordon , William D. Hinsberg , Dennis R. McKean , Carlton G. Willson , Ralph Dammel
发明人： Richard Vicari , Douglas J. Gordon , William D. Hinsberg , Dennis R. McKean , Carlton G. Willson , Ralph Dammel
IPC分类号： C08F212/14 , G03F7/004 , G03F7/023 , C08F12/24
CPC分类号： C08F212/14 , G03F7/0045 , G03F7/0233
摘要： A polymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.
摘要翻译：（a）未取代的4-羟基苯乙烯单体和（b）下式的取代的4-羟基苯乙烯单体的聚合物，其中A，B，C和D独立地为H或C 1至C 4烷基，其中至少一个 B和D是C1至C4烷基; 并且其中所述共聚物的分子量为约800至约100,000; 并且其中单体（a）与单体（b）的摩尔比为约3:1至约1:3。

5. 发明授权

US4458994A High resolution optical lithography method and apparatus having excimer laser light source and stimulated Raman shifting 失效
标题翻译：具有准分子激光光源和受激拉曼位移的高分辨率光刻方法和装置
公开(公告)号：US4458994A
公开(公告)日：1984-07-10
申请号：US502044
申请日：1983-06-07
申请人： Kantilal Jain , Carlton G. Willson
发明人： Kantilal Jain , Carlton G. Willson
IPC分类号： G03F7/20 , H01S3/30 , G03B41/00
CPC分类号： G03F7/70575 , G03F7/20 , G03F7/70583 , H01S3/30
摘要： An optical lithography method and apparatus in which a pulsed excimer laser produces at least one fundamental output which is directed to expose a photosensitive medium. The output is highly non-gaussian and has sufficient power so that full exposures can be accomplished within a few seconds. An alternate light source is provided by directing the excimer laser output to a Raman cell having a suitable Raman medium contained therein. At least one secondary wavelength is produced by stimulated Raman scattering and the output of the Raman cell is directed to expose a photosensitive medium. A mixture of more than one excimer gas can also be provided in the excimer laser to produce one fundamental output for each excimer gas present in the mixture. These outputs can be directed to expose a photosensitive medium directly. Alternatively, these outputs can be directed to a Raman cell having either a single Raman medium or multiple Raman media in a suitable mixture and directing the output from the Raman cell to expose the photosensitive medium.
摘要翻译：一种光刻方法和装置，其中脉冲准分子激光器产生至少一个基本输出，其被引导以曝光光敏介质。输出高度非高斯，具有足够的功率，可以在几秒钟内完成全部曝光。通过将准分子激光器输出引导到其中包含合适的拉曼介质的拉曼细胞来提供替代光源。通过受激拉曼散射产生至少一个次级波长，拉曼光电池的输出被引导以曝光感光介质。在准分子激光器中还可以提供多于一种准分子气体的混合物，以产生混合物中存在的每种准分子气体的一个基本输出。这些输出可以直接暴露感光介质。或者，这些输出可以被引导到在合适的混合物中具有单个拉曼介质或多个拉曼介质的拉曼单元，并且引导来自拉曼单元的输出以暴露感光介质。

6. 发明授权

US5270151A Spin on oxygen reactive ion etch barrier 失效
标题翻译：旋转氧反应离子蚀刻屏障
公开(公告)号：US5270151A
公开(公告)日：1993-12-14
申请号：US852865
申请日：1992-03-17
申请人： Peter A. Agostino , Ajay P. Giri , Hiroyuki Hiraoka , Carlton G. Willson , Daniel J. Dawson
发明人： Peter A. Agostino , Ajay P. Giri , Hiroyuki Hiraoka , Carlton G. Willson , Daniel J. Dawson
IPC分类号： G03F7/075 , G03F7/09 , G03F7/26
CPC分类号： G03F7/094 , G03F7/0757
摘要： Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.
摘要翻译：有机硅烷化合物或聚二苯基硅氮烷化合物和具有酚基的酚醛清漆树脂的反应产物可用作半导体蚀刻工艺中的O 2 RIE阻挡材料。这些材料具有低的氧化蚀刻速率，并且可以旋转以形成无裂纹的厚层。考虑的特定RIE阻隔材料具有以下通式：其中A是甲基或苯基。

7. 发明授权

US4853315A O-quinone diazide sulfonic acid monoesters useful as sensitizers for positive resists 失效
标题翻译：用作阳性抗蚀剂的敏化剂的O-醌二叠氮基磺酸单酯
公开(公告)号：US4853315A
公开(公告)日：1989-08-01
申请号：US144825
申请日：1988-01-15
申请人： Dennis R. McKean , Robert D. Miller , Joseph G. Walsh , Carlton G. Willson
发明人： Dennis R. McKean , Robert D. Miller , Joseph G. Walsh , Carlton G. Willson
IPC分类号： C07C309/76 , C07C67/00 , C07C301/00 , G03C1/72 , G03C1/73 , G03F7/022
CPC分类号： G03F7/022
摘要： Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0.sup.2,6 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

8. 发明授权

US4551418A Process for preparing negative relief images with cationic photopolymerization 失效
标题翻译：用阳离子光聚合制备负浮雕图像的方法
公开(公告)号：US4551418A
公开(公告)日：1985-11-05
申请号：US702514
申请日：1985-02-19
申请人： Anders Hult , Hiroshi Ito , Scott A. MacDonald , Carlton G. Willson
发明人： Anders Hult , Hiroshi Ito , Scott A. MacDonald , Carlton G. Willson
IPC分类号： H01L21/30 , G03F7/20 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C5/00
CPC分类号： G03F7/265
摘要： Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching.
摘要翻译：负浮雕图像通过包括使用阳离子聚合和等离子体蚀刻的方法产生。

9. 发明授权

US4284706A Lithographic resist composition for a lift-off process 失效
标题翻译：用于剥离过程的平版印刷抗蚀剂组合物
公开(公告)号：US4284706A
公开(公告)日：1981-08-18
申请号：US99806
申请日：1979-12-03
申请人： Nicholas J. Clecak , Barbara D. Grant , Carlton G. Willson
发明人： Nicholas J. Clecak , Barbara D. Grant , Carlton G. Willson
IPC分类号： G03C1/72 , C08K5/1575 , C08L61/00 , C08L61/04 , C08L61/06 , G03C1/00 , G03F7/004 , G03F7/016 , G03F7/022 , G03F7/038 , G03F7/26 , H01L21/26 , G03C1/54 , G03C1/60 , G03C5/00
CPC分类号： G03F7/0163 , G03F7/0226
摘要： Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: ##STR1## wherein R.sub.1 is C.sub.1 to C.sub.20 alkyl or aryl, R.sub.2 is H, C.sub.1 to C.sub.20 alkyl or aryl, or together R.sub.1 and R.sub.2 are cycloalkyl, A is N or H.
摘要翻译：提供了光刻抗蚀剂组合物，其允许改进的剥离过程，其中具有孔的沉积掩模具有期望的负斜率或悬垂。抗蚀剂组合物包含酚醛树脂，光敏剂和Meldrum的重氮，或Meldrum的酸或其合适的类似物作为轮廓修饰剂。可用于本发明的轮廓调节剂具有下式：其中R 1为C 1至C 20烷基或芳基，R 2为H，C 1至C 20烷基或芳基，或R 1和R 2为环烷基，A为N或H 。

10. 发明申请

US20090214689A1 Imprint Lithography Templates Having Alignment Marks 审中-公开
标题翻译：印记平版印刷模板具有对齐标记
公开(公告)号：US20090214689A1
公开(公告)日：2009-08-27
申请号：US12437368
申请日：2009-05-07
申请人： Todd C. Bailey , Stephen C. Johnson , Matthew E. Colburn , Byung-Jin Choi , Britain J. Smith , Carlton G. Willson , Sidlgata V. Sreenivasan , John G. Ekerdt
发明人： Todd C. Bailey , Stephen C. Johnson , Matthew E. Colburn , Byung-Jin Choi , Britain J. Smith , Carlton G. Willson , Sidlgata V. Sreenivasan , John G. Ekerdt
IPC分类号： B29C59/16 , B44C1/22
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00
摘要： One embodiment of the present invention is an imprint template for imprint lithography that comprises alignment marks embedded in bulk material of the imprint template.
摘要翻译：本发明的一个实施例是用于压印光刻的压印模板，其包括嵌入压印模板的散装材料中的对准标记。

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