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1. 发明申请

US20090214689A1 Imprint Lithography Templates Having Alignment Marks 审中-公开
标题翻译：印记平版印刷模板具有对齐标记
公开(公告)号：US20090214689A1
公开(公告)日：2009-08-27
申请号：US12437368
申请日：2009-05-07
申请人： Todd C. Bailey , Stephen C. Johnson , Matthew E. Colburn , Byung-Jin Choi , Britain J. Smith , Carlton G. Willson , Sidlgata V. Sreenivasan , John G. Ekerdt
发明人： Todd C. Bailey , Stephen C. Johnson , Matthew E. Colburn , Byung-Jin Choi , Britain J. Smith , Carlton G. Willson , Sidlgata V. Sreenivasan , John G. Ekerdt
IPC分类号： B29C59/16 , B44C1/22
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00
摘要： One embodiment of the present invention is an imprint template for imprint lithography that comprises alignment marks embedded in bulk material of the imprint template.
摘要翻译：本发明的一个实施例是用于压印光刻的压印模板，其包括嵌入压印模板的散装材料中的对准标记。

2. 发明授权

US07708542B2 Device for holding a template for use in imprint lithography 有权
标题翻译：用于保存用于压印光刻的模板的装置
公开(公告)号：US07708542B2
公开(公告)日：2010-05-04
申请号：US10747737
申请日：2003-12-29
申请人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
发明人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
IPC分类号： B29C59/02
CPC分类号： G11B5/855 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S977/887
摘要： Described are imprint lithography templates, methods of forming and using the templates, and a template holder device. An imprint lithography template may include a body with a plurality of recesses on a surface of the body. The body may be of a material that is substantially transparent to activating light. At least a portion of the plurality of recesses may define features having a feature size less than about 250 nm. A template may be formed by obtaining a material that is substantially transparent to activating light and forming a plurality or recesses on a surface of the template. In some embodiments, a template may further include at least one alignment mark. In some embodiments, a template may further include a gap sensing area. An imprint lithography template may be used to form an imprinted layer in a light curable liquid disposed on a substrate. During use, the template may be disposed within a template holder. The template holder may include a body with an opening configured to receive the template, a support plate, and at least one piezo actuator coupled to the body. The piezo actuator may be configured to alter a physical dimension of the template during use.
摘要翻译：描述了压印光刻模板，形成和使用模板的方法以及模板保持装置。压印光刻模板可以包括在主体的表面上具有多个凹部的主体。身体可以是对于激活光是基本上透明的材料。多个凹部的至少一部分可以限定具有小于约250nm的特征尺寸的特征。可以通过获得对于激活光而基本上透明并在模板的表面上形成多个或多个凹陷的材料来形成模板。在一些实施例中，模板还可以包括至少一个对准标记。在一些实施例中，模板还可以包括间隙感测区域。可以使用压印光刻模板来在设置在基板上的可光固化液体中形成印刷层。在使用期间，模板可以设置在模板保持器内。模板保持器可以包括具有构造成接收模板的开口的主体，支撑板和耦合到主体的至少一个压电致动器。压电致动器可以被配置为在使用期间改变模板的物理尺寸。

3. 发明授权

US07229273B2 Imprint lithography template having a feature size under 250 nm 有权
标题翻译：特征尺寸在250nm以下的压印光刻模板
公开(公告)号：US07229273B2
公开(公告)日：2007-06-12
申请号：US10755997
申请日：2004-01-13
申请人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
发明人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
IPC分类号： B29C59/02
CPC分类号： G11B5/855 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S977/887
摘要： The present invention includes a template comprising a plurality of protrusions and a plurality of recessions with a distance between a zenith of any of the plurality of protrusions and a nadir of any one of the plurality of recessions being less than 250 nm.
摘要翻译：本发明包括一个模板，其包括多个突起和多个凹陷，多个凹陷之间的距离在多个突起中的任一个的顶点之间的距离和多个凹陷中的任一个的最低点之间小于250nm。

4. 发明申请

US20080305440A1 APPARATUS FOR FABRICATING NANOSCALE PATTERNS IN LIGHT CURABLE COMPOSITIONS USING AN ELECTRIC FIELD 审中-公开
标题翻译：使用电场制作光固化组合物中的纳米尺度图案的装置
公开(公告)号：US20080305440A1
公开(公告)日：2008-12-11
申请号：US12052099
申请日：2008-03-20
申请人： Carlton G. Willson , Sidlgata V. Sreenivasan , Roger T. Bonnecaze
发明人： Carlton G. Willson , Sidlgata V. Sreenivasan , Roger T. Bonnecaze
IPC分类号： G03F7/20
CPC分类号： B81C1/0046 , B05D1/40 , B05D3/067 , B05D3/145 , B29C43/003 , B29C2043/025 , B29C2043/3211 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention is directed to an apparatus for patterning a liquid on a substrate, with the apparatus including, a template having a pair of spaced-apart recessions with a protrusion disposed therebetween, with the protrusion being spaced-apart from the substrate a first distance and each of the pair of spaced-apart recessions being spaced-apart from the substrate a second distance, with the second distance being greater than the first distance; and a source of voltage in electrical communication with the template to produce an electric field between the template and the substrate, with a strength of the electrical field being inversely proportional to the first and second distances.
摘要翻译：本发明涉及一种用于在衬底上图案化液体的装置，其中该装置包括：具有一对间隔开的凹陷的模板，其中突出物设置在其间，突起与衬底间隔开第一距离并且所述一对间隔开的凹部中的每一个与所述衬底间隔开第二距离，所述第二距离大于所述第一距离; 以及与模板电连通的电压源，以在模板和衬底之间产生电场，其中电场的强度与第一和第二距离成反比。

5. 发明授权

US5807947A Copolymers 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene 失效
标题翻译：共聚物4-羟基苯乙烯和烷基取代的-4-羟基苯乙烯
公开(公告)号：US5807947A
公开(公告)日：1998-09-15
申请号：US277687
申请日：1994-07-20
申请人： Richard Vicari , Douglas J. Gordon , William D. Hinsberg , Dennis R. McKean , Carlton G. Willson , Ralph Dammel
发明人： Richard Vicari , Douglas J. Gordon , William D. Hinsberg , Dennis R. McKean , Carlton G. Willson , Ralph Dammel
IPC分类号： C08F212/14 , G03F7/004 , G03F7/023 , C08F12/24
CPC分类号： C08F212/14 , G03F7/0045 , G03F7/0233
摘要： A polymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.
摘要翻译：（a）未取代的4-羟基苯乙烯单体和（b）下式的取代的4-羟基苯乙烯单体的聚合物，其中A，B，C和D独立地为H或C 1至C 4烷基，其中至少一个 B和D是C1至C4烷基; 并且其中所述共聚物的分子量为约800至约100,000; 并且其中单体（a）与单体（b）的摩尔比为约3:1至约1:3。

6. 发明授权

US4767723A Process for making self-aligning thin film transistors 失效
标题翻译：制造自对准薄膜晶体管的工艺
公开(公告)号：US4767723A
公开(公告)日：1988-08-30
申请号：US115470
申请日：1987-10-30
申请人： William D. Hinsberg, III , Webster E. Howard , Carlton G. Willson
发明人： William D. Hinsberg, III , Webster E. Howard , Carlton G. Willson
IPC分类号： H01L21/027 , H01L21/30 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/265 , H01L21/44 , H01L21/465 , H01L21/48
CPC分类号： G03F7/095 , H01L21/0274 , H01L29/42384 , H01L29/4908 , H01L29/66765 , Y10S148/137 , Y10S438/928
摘要： A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.

7. 发明授权

US4458994A High resolution optical lithography method and apparatus having excimer laser light source and stimulated Raman shifting 失效
标题翻译：具有准分子激光光源和受激拉曼位移的高分辨率光刻方法和装置
公开(公告)号：US4458994A
公开(公告)日：1984-07-10
申请号：US502044
申请日：1983-06-07
申请人： Kantilal Jain , Carlton G. Willson
发明人： Kantilal Jain , Carlton G. Willson
IPC分类号： G03F7/20 , H01S3/30 , G03B41/00
CPC分类号： G03F7/70575 , G03F7/20 , G03F7/70583 , H01S3/30
摘要： An optical lithography method and apparatus in which a pulsed excimer laser produces at least one fundamental output which is directed to expose a photosensitive medium. The output is highly non-gaussian and has sufficient power so that full exposures can be accomplished within a few seconds. An alternate light source is provided by directing the excimer laser output to a Raman cell having a suitable Raman medium contained therein. At least one secondary wavelength is produced by stimulated Raman scattering and the output of the Raman cell is directed to expose a photosensitive medium. A mixture of more than one excimer gas can also be provided in the excimer laser to produce one fundamental output for each excimer gas present in the mixture. These outputs can be directed to expose a photosensitive medium directly. Alternatively, these outputs can be directed to a Raman cell having either a single Raman medium or multiple Raman media in a suitable mixture and directing the output from the Raman cell to expose the photosensitive medium.
摘要翻译：一种光刻方法和装置，其中脉冲准分子激光器产生至少一个基本输出，其被引导以曝光光敏介质。输出高度非高斯，具有足够的功率，可以在几秒钟内完成全部曝光。通过将准分子激光器输出引导到其中包含合适的拉曼介质的拉曼细胞来提供替代光源。通过受激拉曼散射产生至少一个次级波长，拉曼光电池的输出被引导以曝光感光介质。在准分子激光器中还可以提供多于一种准分子气体的混合物，以产生混合物中存在的每种准分子气体的一个基本输出。这些输出可以直接暴露感光介质。或者，这些输出可以被引导到在合适的混合物中具有单个拉曼介质或多个拉曼介质的拉曼单元，并且引导来自拉曼单元的输出以暴露感光介质。

8. 发明授权

US5270151A Spin on oxygen reactive ion etch barrier 失效
标题翻译：旋转氧反应离子蚀刻屏障
公开(公告)号：US5270151A
公开(公告)日：1993-12-14
申请号：US852865
申请日：1992-03-17
申请人： Peter A. Agostino , Ajay P. Giri , Hiroyuki Hiraoka , Carlton G. Willson , Daniel J. Dawson
发明人： Peter A. Agostino , Ajay P. Giri , Hiroyuki Hiraoka , Carlton G. Willson , Daniel J. Dawson
IPC分类号： G03F7/075 , G03F7/09 , G03F7/26
CPC分类号： G03F7/094 , G03F7/0757
摘要： Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.
摘要翻译：有机硅烷化合物或聚二苯基硅氮烷化合物和具有酚基的酚醛清漆树脂的反应产物可用作半导体蚀刻工艺中的O 2 RIE阻挡材料。这些材料具有低的氧化蚀刻速率，并且可以旋转以形成无裂纹的厚层。考虑的特定RIE阻隔材料具有以下通式：其中A是甲基或苯基。

9. 发明授权

US4853315A O-quinone diazide sulfonic acid monoesters useful as sensitizers for positive resists 失效
标题翻译：用作阳性抗蚀剂的敏化剂的O-醌二叠氮基磺酸单酯
公开(公告)号：US4853315A
公开(公告)日：1989-08-01
申请号：US144825
申请日：1988-01-15
申请人： Dennis R. McKean , Robert D. Miller , Joseph G. Walsh , Carlton G. Willson
发明人： Dennis R. McKean , Robert D. Miller , Joseph G. Walsh , Carlton G. Willson
IPC分类号： C07C309/76 , C07C67/00 , C07C301/00 , G03C1/72 , G03C1/73 , G03F7/022
CPC分类号： G03F7/022
摘要： Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0.sup.2,6 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

10. 发明授权

US4551418A Process for preparing negative relief images with cationic photopolymerization 失效
标题翻译：用阳离子光聚合制备负浮雕图像的方法
公开(公告)号：US4551418A
公开(公告)日：1985-11-05
申请号：US702514
申请日：1985-02-19
申请人： Anders Hult , Hiroshi Ito , Scott A. MacDonald , Carlton G. Willson
发明人： Anders Hult , Hiroshi Ito , Scott A. MacDonald , Carlton G. Willson
IPC分类号： H01L21/30 , G03F7/20 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C5/00
CPC分类号： G03F7/265
摘要： Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching.
摘要翻译：负浮雕图像通过包括使用阳离子聚合和等离子体蚀刻的方法产生。

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