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1. 发明申请

WO2011039092A3 SPRING ARRANGEMENT FOR CONTROLLING THE RIDE IN A VEHICLE 审中-公开
标题翻译：用于车辆中的水平控制的弹簧布置
公开(公告)号：WO2011039092A3
公开(公告)日：2011-10-13
申请号：PCT/EP2010063993
申请日：2010-09-22
申请人： BOMBARDIER TRANSP GMBH , ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
发明人： ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
IPC分类号： B61F5/14
CPC分类号： B61F5/14 , B61F5/02
摘要： The invention relates to a spring arrangement for supporting a car body on a suspension of a vehicle for regulating the level thereof, in particular of a railway vehicle, having a spring device (105) and an actuator device (107), wherein the spring device (105) takes up a first installation space, the actuator device (107) takes up a second installation space, the spring device (105) and the actuator device (107) being connected to each other in an operational direction in a kinematically serial arrangement, and the actuator device (107) being designed for at least partially compensating for a change in length of the spring device (105) in the operational direction by displacing an actuator component (107 2) in the operational direction, and wherein the first installation space and the second installation space overlap each other in the operational direction in an overlap region. The invention further relates to a vehicle having such a spring arrangement.
摘要翻译：本发明涉及一种弹簧装置，用于电平调节的车辆的底盘上支承车体，特别是轨道车辆，包括弹簧装置（105）和致动器（107），所述弹簧装置（105）占据一第一空间，所述致动器（107）权利的第二空间，所述弹簧装置（105）和所述致动器（107）在彼此之间以及致动器装置（107）的运动串联布置一个操作方向被连接由移位到适于在作用方向的弹簧装置（105）的长度变化补偿至少部分地在操作方向上的致动器部件（107 2），并且其中所述第一空间和在彼此重叠它进一步涉及一种车辆用这种弹簧装置的区域中作用的方向上的第二空间重叠。

2. 发明申请

WO2011039092A9 SPRING ARRANGEMENT FOR CONTROLLING THE RIDE IN A VEHICLE 审中-公开
公开(公告)号：WO2011039092A9
公开(公告)日：2011-08-18
申请号：PCT/EP2010063993
申请日：2010-09-22
申请人： BOMBARDIER TRANSP GMBH , ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
发明人： ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
IPC分类号： B61F5/14
CPC分类号： B61F5/14 , B61F5/02
摘要： The invention relates to a spring arrangement for supporting a car body on a suspension of a vehicle for regulating the level thereof, in particular of a railway vehicle, having a spring device (105) and an actuator device (107), wherein the spring device (105) takes up a first installation space, the actuator device (107) takes up a second installation space, the spring device (105) and the actuator device (107) being connected to each other in an operational direction in a kinematically serial arrangement, and the actuator device (107) being designed for at least partially compensating for a change in length of the spring device (105) in the operational direction by displacing an actuator component (107 2) in the operational direction, and wherein the first installation space and the second installation space overlap each other in the operational direction in an overlap region. The invention further relates to a vehicle having such a spring arrangement.

3. 发明申请

WO2010034725A3 METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, ON THE BASIS OF A THIN SILICON LAYER 审中-公开
标题翻译：基于薄硅层制造半导体组件特别是太阳能电池的方法
公开(公告)号：WO2010034725A3
公开(公告)日：2010-09-23
申请号：PCT/EP2009062286
申请日：2009-09-22
申请人： INST SOLARENERGIEFORSCHUNG , HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
发明人： HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/76259 , Y02E10/547 , Y02P70/521
摘要： A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
摘要翻译：一种基于硅薄膜生产半导体元件，特别是太阳能电池的方法。提出了一种基于硅薄膜（5）制造太阳能电池的方法。该方法提出：准备硅衬底（1）; 在硅衬底（1）的表面上形成多孔层（3）; 在多孔层（3）上沉积硅薄膜（5）; 以及将多孔层（3）用作预设断裂点，从硅衬底（1）分离薄硅层（5）。多孔层（3）在此由硅衬底（1）的无电流化学蚀刻形成。通过省去传统使用的阳极蚀刻和替换无电流化学蚀刻，生产工艺可以大大简化。

4. 发明申请

WO2005105844A3 PREPARATION OF SCFV ANTIBODY FRAGMENTS 审中-公开
标题翻译： SCFV抗体片段的制备
公开(公告)号：WO2005105844A3
公开(公告)日：2006-01-26
申请号：PCT/EP2005004893
申请日：2005-05-04
申请人： MICROMET AG , RAUM TOBIAS , HENCKEL JULIA , KRINNER EVA , MITTELSTRASS SILKE , WOLF ANDREAS
发明人： RAUM TOBIAS , HENCKEL JULIA , KRINNER EVA , MITTELSTRASS SILKE , WOLF ANDREAS
IPC分类号： C07K16/00 , C07K16/24
CPC分类号： C07K16/243 , C07K16/005 , C07K2317/622 , C07K2317/73
摘要： The invention relates to methods of preparing antibody fragments. The invention further relates to antibody fragments prepared by said methods. The invention further relates to antibody variable regions comprised in antibody fragments producible by said methods.
摘要翻译：本发明涉及制备抗体片段的方法。本发明还涉及通过所述方法制备的抗体片段。本发明还涉及包含在可通过所述方法生产的抗体片段中的抗体可变区。

5. 发明申请

WO2012104198A2 PHOTOVOLTAIC SOLAR CELL AND A METHOD FOR THE PRODUCTION OF SAME 审中-公开
标题翻译：光伏太阳能电池及其制备方法
公开(公告)号：WO2012104198A2
公开(公告)日：2012-08-09
申请号：PCT/EP2012051243
申请日：2012-01-26
申请人： FRAUNHOFER GES FORSCHUNG , THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , WOLF ANDREAS , BIRO DANIEL
发明人： THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , WOLF ANDREAS , BIRO DANIEL
IPC分类号： H01L31/068
CPC分类号： H01L31/02245 , H01L27/1421 , H01L31/0682 , Y02E10/547
摘要： The invention relates to a photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, comprising at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlap region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being designed as a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlap region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being designed as a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.
摘要翻译：本发明涉及一种用于将入射电磁辐射转化为电能的光伏太阳能电池，包括至少一个形成在碱掺杂类型的硅衬底基区; 的掺杂型发射极，其发射极掺杂类型是相反的基本掺杂类型的掺杂类型的至少一个发射极区; 至少一个金属Basiskontaktierungsstruktur其中Basiskontaktierungsstruktur导电地连接到Emitterkontaktierungsstruktur导电地连接到所述发射极区域的基极区域和至少一个金属Emitterkontaktierungsstruktur，所述基区和发射极区被布置成使得所述基部之间以及发射极区域至少局部，形成pn 形成的过渡。至关重要的是，该Basiskontaktierungsstruktur在碱旁路区域重叠的发射极区和在该重叠区域中Basiskontaktierungsstruktur和发射极区，其中半导体接触形成为金属 - 半导体接触或金属 - 绝缘体 - 半导体接触和/或在发射极旁路区域Emitterkontaktierungsstruktur之间形成的二极管型半导体接触的是基极区重叠和形成在此重叠区域中，其半导体接触形成为金属 - 半导体接触或金属 - 绝缘体 - 半导体接触Emitterkontaktierungsstruktur和基极区之间的二极管型半导体接触。本发明还涉及一种用于制造太阳能电池的方法。

6. 发明申请

WO2011157422A3 METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：一种用于生产光伏太阳能电池
公开(公告)号：WO2011157422A3
公开(公告)日：2012-12-27
申请号：PCT/EP2011002968
申请日：2011-06-16
申请人： FRAUNHOFER GES FORSCHUNG , MACK SEBASTIAN , JAEGER ULRICH , WOLF ANDREAS , BIRO DANIEL , PREU RALF , KAESTNER GERO
发明人： MACK SEBASTIAN , JAEGER ULRICH , WOLF ANDREAS , BIRO DANIEL , PREU RALF , KAESTNER GERO
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L21/2255 , H01L21/268 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell, comprising the following steps: A. texturising a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a flat low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate by means of thermal oxidation.
摘要翻译：本发明涉及一种用于制造光伏太阳能电池，包括以下方法步骤：A.纹理化半导体衬底的前侧（2）; B.生成上的前侧的选择性发射极的掺杂（2）通过施加到前侧的半导体基板（2）形成的平面Niedrigdotierbereich（4）和在其内的本地Hochdotierbereich（3）; 和C.施加至少一个金属发射极接触结构上的前侧（2）的半导体衬底，至少在局部高掺杂的区域，其中所述方法之间同时步骤B和C在前面和在半导体衬底各自具有氧化硅层（在步骤B1图5a，5b的背面的）通过热氧化产生的。

7. 发明申请

WO2012000612A3 METHOD FOR PRODUCING A SELECTIVE DOPING STRUCTURE IN A SEMICONDUCTOR SUBSTRATE IN ORDER TO PRODUCE A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：方法产生选择性DOTIERSTRUKTUR在半导体衬底用于生产光伏太阳能电池
公开(公告)号：WO2012000612A3
公开(公告)日：2012-12-20
申请号：PCT/EP2011002965
申请日：2011-06-16
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , JAEGER ULRICH , BIRO DANIEL , VOLK ANNE-KRISTIN , SEIFFE JOHANNES , MACK SEBASTIAN , WOLF ANDREAS , PREU RALF
发明人： JAEGER ULRICH , BIRO DANIEL , VOLK ANNE-KRISTIN , SEIFFE JOHANNES , MACK SEBASTIAN , WOLF ANDREAS , PREU RALF
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L21/2254 , H01L21/268 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： The invention relates to a method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method comprises the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate by means of liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.
摘要翻译：本发明涉及一种用于在用于制造光生伏打太阳能电池的制造半导体衬底的选择性Dotierstruktur。该方法包括（A）沉积在半导体基板的发射极侧的掺杂层（2），（B）的掺杂层（2）的熔融区域的局部加热和（2）位于该半导体衬底的熔点范围的掺杂层的下方，从而使液 - 液的手段是从掺杂剂层（2）扩散的掺杂剂扩散到熔化的半导体衬底，从而使熔融共混物的固化后，一个Hochdotierbereich（3）产生的（C）通过在半导体基板产生二维Niedrigdotierbereiches加热全球性的，（（D）除去掺杂层 2）和（e）去除或在Dotierseite转换半导体衬底的层，使得所述Niedrigdotierungs-的和近表面部分的高杂质区域被去除或转化成非导电层。

8. 发明申请

WO2010081505A3 SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL FROM A SILICON SUBSTRATE 审中-公开
标题翻译：太阳能电池及其方法从硅衬底制造太阳能电池
公开(公告)号：WO2010081505A3
公开(公告)日：2011-04-14
申请号：PCT/EP2009008605
申请日：2009-12-03
申请人： FRAUNHOFER GES FORSCHUNG , BIRO DANIEL , SCHULTZ-WITTMANN OLIVER , LEMKE ANKE , RENTSCH JOCHEN , CLEMENT FLORIAN , HOFMANN MARC , WOLF ANDREAS , GAUTERO LUCA , MACK SEBASTIAN , PREU RALF
发明人： BIRO DANIEL , SCHULTZ-WITTMANN OLIVER , LEMKE ANKE , RENTSCH JOCHEN , CLEMENT FLORIAN , HOFMANN MARC , WOLF ANDREAS , GAUTERO LUCA , MACK SEBASTIAN , PREU RALF
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/1868 , H01L31/02245 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a solar cell from a silicon wafer, comprising the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.
摘要翻译：本发明涉及一种方法，用于从硅晶片制造太阳能电池，其步骤包括：在硅衬底的纹理一侧（1），以改善切割损伤的吸收或去除，以在硅衬底（1）的一侧，B形成发射极区域（2）上通过扩散掺杂剂来形成pn结的硅衬底（1）的一侧，C除去玻璃层，其中，所述玻璃层中含有的掺杂剂，D施加掩模层（3），其中，所述掩蔽层（3）是介电层，例如烧蚀硅衬底（1）的材料的一部分，F施加的金属化（5,6），用于所述太阳能电池的电接触。至关重要的是，E和F是在工艺步骤之间用于形成氧化物层（4），并且进行热氧化，在掩模层（3）和在所述硅衬底上的后续工艺步骤的氧化物层（4）（1）保持。

9. 发明申请

WO2006111353A2 ANTIBODY NEUTRALIZERS OF HUMAN GRANULOCYTE MACROPHAGE COLONY STIMULATING FACTOR 审中-公开
标题翻译：人粒细胞巨噬细胞集落刺激因子的抗体中性粒细胞
公开(公告)号：WO2006111353A2
公开(公告)日：2006-10-26
申请号：PCT/EP2006003528
申请日：2006-04-18
申请人： MICROMET AG , RAUM TOBIAS , HEPP NEE HENCKEL JULIA , KRINNER EVA , PETSCH NEE MITTELSTRASS SILKE , ZEMAN STEVEN , WOLF ANDREAS , BRUCKMAIER SANDRA
发明人： RAUM TOBIAS , HEPP NEE HENCKEL JULIA , KRINNER EVA , PETSCH NEE MITTELSTRASS SILKE , ZEMAN STEVEN , WOLF ANDREAS , BRUCKMAIER SANDRA
CPC分类号： C07K16/243 , A61K2039/505 , C07K2317/21 , C07K2317/24 , C07K2317/33 , C07K2317/34 , C07K2317/56 , C07K2317/565 , C07K2317/622 , C07K2317/73 , C07K2317/76 , C07K2317/92
摘要： The present invention relates to a human monoclonal antibody or fragment thereof which specifically binds to and neutralizes primate GM-CSF.
摘要翻译：本发明涉及特异性结合并中和灵长类动物GM-CSF的人单克隆抗体或其片段。

10. 发明申请

WO2012007143A2 PHOTOVOLTAIC SOLAR CELL AND METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：光伏太阳能电池及生产光伏太阳能电池的方法
公开(公告)号：WO2012007143A2
公开(公告)日：2012-01-19
申请号：PCT/EP2011003451
申请日：2011-07-11
申请人： FRAUNHOFER GES FORSCHUNG , THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , BIRO DANIEL , WOLF ANDREAS , PREU RALF
发明人： THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , BIRO DANIEL , WOLF ANDREAS , PREU RALF
IPC分类号： H01L31/0224
CPC分类号： H01L31/02245 , H01L31/022425 , H01L31/022458 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.
摘要翻译：本发明涉及一种用于制造具有，其步骤包括形成用于将光耦合前方开口的光伏太阳能电池：在碱性掺杂类型的半导体衬底中的产生的多个凹部，B至少在半导体衬底的前侧产生的发射极掺杂类型的一个或多个发射区，其特征在于，所述发射极掺杂类型相反的基本掺杂型，C施加电绝缘的绝缘层和d在太阳能电池，其被设计成可导电地连接到一个Basisdotierbereich所述半导体基板的背面产生在至少一个金属基极接触结构的凹部的金属传导的结构，至少一个金属的在太阳能电池的前其被导电地在Halbleitersubs的前面连接到所述发射极区域前侧接触结构 trates形成，并且在其上形成电连接到通过线接触结构的太阳能电池的背面的至少一个背接触结构。本发明的特征在于，在方法步骤B和/或进一步的方法步骤被附加地形成在每种情况下一个来自前面延伸至后部通道发射极的发射极掺杂类型的区域中的凹部的侧壁上的半导体基板，在方法步骤C的绝缘层，的背面半导体衬底，任选另外的中间夹层，是覆盖施加为使得背面接触结构被施加到绝缘层，如果合适的话其他中间层，在方法步骤d被施加，以使背侧接触结构延伸的半导体衬底的区域与基极掺杂并且因为中间绝缘层的在这些区域的电如果背面接触结构和半导体衬底之间形成绝缘层，并且绝缘层上的基极接触结构形成承滴盘是，施加到多个中间层，使得绝缘层的基极接触结构至少部分地渗透，从而产生基极接触结构和半导体衬底之间的导电连接。本发明还涉及一种光伏太阳能电池。

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