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1. 发明授权

US06841943B2 Plasma processor with electrode simultaneously responsive to plural frequencies 有权
标题翻译：等离子体处理器，电极同时响应多个频率
公开(公告)号：US06841943B2
公开(公告)日：2005-01-11
申请号：US10180978
申请日：2002-06-27
申请人： Vahid Vahedi , Peter Loewenhardt , Albert Ellingboe , Andras Kuthi , Andreas Fischer
发明人： Vahid Vahedi , Peter Loewenhardt , Albert Ellingboe , Andras Kuthi , Andreas Fischer
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。直流接地延伸部基本上与第一电极对准。在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比被耦合到包括第一电极和延伸的路径，而不是第二频率的路径电极。施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

2. 发明授权

US08525139B2 Method and apparatus of halogen removal 有权
标题翻译：卤素除去的方法和装置
公开(公告)号：US08525139B2
公开(公告)日：2013-09-03
申请号：US12908258
申请日：2010-10-20
申请人： Harmeet Singh , Sanket Sant , Shang-I Chou , Vahid Vahedi , Raphael Casaes , Seetharaman Ramachandran
发明人： Harmeet Singh , Sanket Sant , Shang-I Chou , Vahid Vahedi , Raphael Casaes , Seetharaman Ramachandran
IPC分类号： A61N5/06 , C23F1/00 , H01L21/3065 , H01L21/26
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67115 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要： A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.
摘要翻译：将晶片设置在入口加载锁定室中。在入口装载锁定室中产生真空。晶片被输送到处理工具。在处理室中处理晶片以提供经处理的晶片，其中处理形成卤素残基。在处理晶片之后，在处理室中提供脱气步骤。将经处理的晶片转移到脱气室中。处理的晶片在脱气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气体流进行处理。停止气体流动。 UV灯停止。将经处理的晶片从脱气室中取出。

3. 发明申请

US20110143462A1 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 有权
标题翻译：调整基板温度以提高光盘的均匀性
公开(公告)号：US20110143462A1
公开(公告)日：2011-06-16
申请号：US12966506
申请日：2010-12-13
申请人： Keith William Gaff , Harmeet Singh , Keith Comendant , Vahid Vahedi
发明人： Keith William Gaff , Harmeet Singh , Keith Comendant , Vahid Vahedi
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：一种等离子体蚀刻系统，具有具有多个可独立控制的加热器区域的基板支撑组件。等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

4. 发明授权

US07578945B2 Method and apparatus for tuning a set of plasma processing steps 有权
标题翻译：用于调整一组等离子体处理步骤的方法和装置
公开(公告)号：US07578945B2
公开(公告)日：2009-08-25
申请号：US11582730
申请日：2006-10-17
申请人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
发明人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
IPC分类号： B44C1/22 , H01L21/00
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻在衬底上的一组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

5. 发明授权

US06577915B1 Applications of a semi-empirical, physically based, profile simulator 有权
标题翻译：半经验的，基于物理的配置文件模拟器的应用
公开(公告)号：US06577915B1
公开(公告)日：2003-06-10
申请号：US09608163
申请日：2000-06-30
申请人： David Cooperberg , Vahid Vahedi
发明人： David Cooperberg , Vahid Vahedi
IPC分类号： G05B1302
CPC分类号： H01J37/32935
摘要： A method and an apparatus for a semi-empirical process simulation using a calibrated profile simulator to create a reactor model which can predict neutral and ion flux distributions on a substrate as a function of the reactor settings include providing a set of conditions characterized by unique reactor settings. Wafers are processed under each condition. Etch or deposition rates and surface profiles are measured and used in the calibrated profile simulator to derive the flux distributions. The flux distributions data generated by the processes are then used to create a reactor model.
摘要翻译：用于使用校准轮廓模拟器创建反应器模型的半经验过程模拟的方法和装置，其可以预测作为反应器设置的函数的衬底上的中性和离子通量分布，包括提供一组由独特的反应器设置。在各种条件下处理晶片。测量蚀刻或沉积速率和表面轮廓，并在校准轮廓模拟器中使用蚀刻或沉积速率和表面轮廓以导出通量分布。然后使用由该方法产生的通量分布数据来产生反应器模型。

6. 发明授权

US06316169B1 Methods for reducing profile variation in photoresist trimming 有权
标题翻译：降低光刻胶修整中轮廓变化的方法
公开(公告)号：US06316169B1
公开(公告)日：2001-11-13
申请号：US09340070
申请日：1999-06-25
申请人： Vahid Vahedi , Yosias Melaku
发明人： Vahid Vahedi , Yosias Melaku
IPC分类号： G03F700
CPC分类号： H01L21/31138 , G03F7/40 , H01L21/0274 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method of removing photoresist material from a semiconductor substrate includes providing a semiconductor substrate having a patterned photoresist mask. A layer comprised of polymer material is formed over the patterned photoresist mask. The layer comprised of polymer material and a portion of the patterned photoresist mask are then removed. The layer comprised of polymer material is preferably formed by introducing a process gas into a plasma environment and is preferably formed with less thickness in a high aspect ratio area relative to a low aspect ratio area.
摘要翻译：从半导体衬底去除光致抗蚀剂材料的方法包括提供具有图案化光致抗蚀剂掩模的半导体衬底。在图案化的光致抗蚀剂掩模上形成由聚合物材料构成的层。然后去除由聚合物材料和图案化的光致抗蚀剂掩模的一部分组成的层。由聚合物材料构成的层优选通过将工艺气体引入等离子体环境而形成，并且相对于低纵横比区域优选在高纵横比区域中形成的厚度较小。

7. 发明申请

US20090261065A1 COMPONENTS FOR USE IN A PLASMA CHAMBER HAVING REDUCED PARTICLE GENERATION AND METHOD OF MAKING 审中-公开
标题翻译：用于具有减少颗粒生成的等离子体室的组分和制备方法
公开(公告)号：US20090261065A1
公开(公告)日：2009-10-22
申请号：US12425639
申请日：2009-04-17
申请人： HARMEET SINGH , John Daugherty , Vahid Vahedi , Hong Shih
发明人： HARMEET SINGH , John Daugherty , Vahid Vahedi , Hong Shih
IPC分类号： H01L21/306 , B44C1/22 , C23F1/00
CPC分类号： C04B41/53 , C04B35/48 , C04B35/50 , C04B35/505 , C04B41/009 , C04B41/91 , H01J37/3244 , H01J37/32495 , H01J37/3255 , Y10T428/24355 , C04B41/5353
摘要： Components entirely of ceramic with etched surfaces wherein the etched surface has a surface roughness value or at least about 100 microinches (about 2.54 microns) Ra, and methods of forming such.
摘要翻译：完全由具有蚀刻表面的陶瓷组成的部件，其中蚀刻表面具有表面粗糙度值或至少约100微英寸（约2.54微米）Ra，以及形成其的方法。

8. 发明申请

US20070034604A1 Method and apparatus for tuning a set of plasma processing steps 有权
标题翻译：用于调整一组等离子体处理步骤的方法和装置
公开(公告)号：US20070034604A1
公开(公告)日：2007-02-15
申请号：US11582730
申请日：2006-10-17
申请人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
发明人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

9. 发明授权

US07138067B2 Methods and apparatus for tuning a set of plasma processing steps 有权
标题翻译：调整一组等离子体处理步骤的方法和装置
公开(公告)号：US07138067B2
公开(公告)日：2006-11-21
申请号：US10951552
申请日：2004-09-27
申请人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
发明人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
IPC分类号： B44C1/22 , H01L21/00
CPC分类号： C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642 , H01L21/32136
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

10. 发明申请

US20060065628A1 Methods and apparatus for tuning a set of plasma processing steps 有权
公开(公告)号：US20060065628A1
公开(公告)日：2006-03-30
申请号：US10951552
申请日：2004-09-27
申请人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
发明人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642 , H01L21/32136
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

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