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1. 发明申请

US20110143462A1 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 有权
标题翻译：调整基板温度以提高光盘的均匀性
公开(公告)号：US20110143462A1
公开(公告)日：2011-06-16
申请号：US12966506
申请日：2010-12-13
申请人： Keith William Gaff , Harmeet Singh , Keith Comendant , Vahid Vahedi
发明人： Keith William Gaff , Harmeet Singh , Keith Comendant , Vahid Vahedi
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：一种等离子体蚀刻系统，具有具有多个可独立控制的加热器区域的基板支撑组件。等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

2. 发明授权

US08642480B2 Adjusting substrate temperature to improve CD uniformity 有权
标题翻译：调整基板温度以提高CD均匀性
公开(公告)号：US08642480B2
公开(公告)日：2014-02-04
申请号：US12966506
申请日：2010-12-13
申请人： Keith William Gaff , Harmeet Singh , Keith Comendant , Vahid Vahedi
发明人： Keith William Gaff , Harmeet Singh , Keith Comendant , Vahid Vahedi
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：一种等离子体蚀刻系统，具有具有多个可独立控制的加热器区域的基板支撑等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

3. 发明申请

US20130072035A1 THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：具有用于半导体加工的平面热区的热板
公开(公告)号：US20130072035A1
公开(公告)日：2013-03-21
申请号：US13238396
申请日：2011-09-21
申请人： Keith William Gaff , Keith Comendant , Anthony Ricci
发明人： Keith William Gaff , Keith Comendant , Anthony Ricci
IPC分类号： H01L21/30 , H01C17/02 , H05B3/68
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译：一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。每个平面热区使用至少一个珀耳帖装置作为热电元件。其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

4. 发明申请

US20130068750A1 HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：具有二极管平面加热器的加热板用于半导体加工
公开(公告)号：US20130068750A1
公开(公告)日：2013-03-21
申请号：US13237444
申请日：2011-09-20
申请人： Keith William Gaff , Keith Comendant
发明人： Keith William Gaff , Keith Comendant
IPC分类号： H05B3/68
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。每个平面加热器区域使用至少一个二极管作为加热器元件。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片粘合在一起。

5. 发明授权

US08624168B2 Heating plate with diode planar heater zones for semiconductor processing 有权
标题翻译：加热板带二极管平面加热器区域用于半导体加工
公开(公告)号：US08624168B2
公开(公告)日：2014-01-07
申请号：US13237444
申请日：2011-09-20
申请人： Keith William Gaff , Keith Comendant
发明人： Keith William Gaff , Keith Comendant
IPC分类号： H05B3/68 , H05B3/02
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。每个平面加热器区域使用至少一个二极管作为加热器元件。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

6. 发明授权

US08461674B2 Thermal plate with planar thermal zones for semiconductor processing 有权
标题翻译：具有用于半导体加工的平面热区的热板
公开(公告)号：US08461674B2
公开(公告)日：2013-06-11
申请号：US13238396
申请日：2011-09-21
申请人： Keith William Gaff , Keith Comendant , Anthony Ricci
发明人： Keith William Gaff , Keith Comendant , Anthony Ricci
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译：一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。每个平面热区使用至少一个珀耳帖装置作为热电元件。其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

7. 发明申请

US20100116788A1 Substrate temperature control by using liquid controlled multizone substrate support 审中-公开
标题翻译：通过使用液体多基质底物支持底物温度控制
公开(公告)号：US20100116788A1
公开(公告)日：2010-05-13
申请号：US12292081
申请日：2008-11-12
申请人： Harmeet Singh , Keith Comendant
发明人： Harmeet Singh , Keith Comendant
IPC分类号： B44C1/22 , C23F1/08 , C23C16/54 , C23C14/22 , C23C14/34
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/46 , C23C16/463 , C23C16/50 , C23C16/52 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.
摘要翻译：提供了一种用于等离子体处理装置的反应室中的基板支架。衬底支撑件包括基部构件和覆盖基底构件的传热构件。传热构件具有多个区域以分别加热和冷却传热构件的每个区域。静电吸盘覆盖传热部件。静电卡盘具有用于在等离子体处理装置的反应室中支撑基板的支撑表面。冷液源和热液体源与每个区域中的流动通道流体连通。阀装置可操作以通过调节热液体与在流动通道中循环的冷液体的混合比来独立地控制液体的温度。在另一个实施例中，沿着供应管线和输送管线的加热元件在流动通道中循环之前加热来自液体源的液体。

8. 发明授权

US08637794B2 Heating plate with planar heating zones for semiconductor processing 有权
标题翻译：加热板采用平面加热区进行半导体加工
公开(公告)号：US08637794B2
公开(公告)日：2014-01-28
申请号：US12582991
申请日：2009-10-21
申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
发明人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC分类号： H05B3/10
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

9. 发明申请

US20110092072A1 HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：具有平面加热区域的加热板用于半导体加工
公开(公告)号：US20110092072A1
公开(公告)日：2011-04-21
申请号：US12582991
申请日：2009-10-21
申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
发明人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC分类号： H01L21/3065 , H01C17/00 , H01C17/06 , B05C13/00 , H01L21/306 , C23C14/34
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

10. 发明授权

US09318349B2 Plasma chamber top piece assembly 有权
标题翻译：等离子室顶部组件
公开(公告)号：US09318349B2
公开(公告)日：2016-04-19
申请号：US13950040
申请日：2013-07-24
申请人： Leonard J. Sharpless , Keith Comendant
发明人： Leonard J. Sharpless , Keith Comendant
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/465 , H01J37/21 , H01J37/32 , H01L21/67 , C03C15/00 , C03C17/00 , H01L21/4763
CPC分类号： H01L21/465 , C03C15/00 , C03C17/001 , H01J37/321 , H01J37/32522 , H01L21/4763 , H01L21/67109
摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.
摘要翻译：描述了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化的顶部件，所述顶部件还构造成用于加热和冷却系统。其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

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