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    • 2. 发明授权
    • Plasma arrestor insert
    • 等离子体避雷器插入物
    • US08503151B2
    • 2013-08-06
    • US12570263
    • 2009-09-30
    • Keith Comendant
    • Keith Comendant
    • H01H9/30H01H73/18
    • H01L21/67069
    • A dielectric arrestor insert for use in a chamber wafer processing system having a gas input line, an arrestor housing and a wafer processing space. The input line is able to provide gas to the arrestor housing. The arrestor housing is able to house the dielectric arrestor insert. The dielectric arrestor insert comprises a gas entry portion, a non-linear channel and a gas exit portion. The gas entry portion is arranged to receive the gas from the input line. The non-linear channel is arranged to deliver the gas from the gas entry portion to the gas exit portion. The gas exit portion is arranged to deliver the gas from the non-linear channel to the wafer processing space.
    • 一种用于具有气体输入管线,避雷器壳体和晶片处理空间的室晶片处理系统中的介电抑制器插入件。 输入线能够向避雷器壳体提供气体。 避雷器壳体能够容纳介电避雷器插入物。 介电抑制器插件包括气体入口部分,非线性通道和气体出口部分。 气体入口部分被布置成从输入管线接收气体。 非线性通道布置成将气体从气体入口部分输送到气体出口部分。 气体出口部分布置成将气体从非线性通道输送到晶片处理空间。
    • 3. 发明申请
    • PLASMA CHAMBER TOP PIECE ASSEMBLY
    • 等离子体顶板组件
    • US20120043022A1
    • 2012-02-23
    • US12861769
    • 2010-08-23
    • Leonard J. SharplessKeith Comendant
    • Leonard J. SharplessKeith Comendant
    • C23F1/08C23C16/50
    • H01L21/465C03C15/00C03C17/001H01J37/321H01J37/32522H01L21/4763H01L21/67109
    • A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system. The top piece coupled to the bottom piece and at least partially covered by the cover, the top piece comprising a first shelf, a second shelf, and a wall; the wall being disposed between the first shelf and the second shelf; a cavity being formed between the first shelf and the second shelf, and between the wall and a portion of the cover; the heating and cooling system being disposed inside the cavity; Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the top piece, and the top piece substantially complies with a set of SEMI ergonomic safety standards for a part handled by a single person.
    • 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件,其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场的感应线圈,以便产生用于处理衬底的等离子体。 等离子体处理系统还包括至少覆盖感应线圈和加热和冷却系统的盖。 所述顶部件联接到所述底部件并且至少部分地被所述盖子覆盖,所述顶部件包括第一搁板,第二搁板和壁; 所述壁布置在所述第一搁架和所述第二搁架之间; 在所述第一搁板和所述第二搁板之间以及所述壁与所述盖的一部分之间形成空腔; 所述加热和冷却系统设置在所述空腔内; 其中,加热和冷却系统通过顶部件基本上与电磁场屏蔽,并且顶部件基本上符合由单个人处理的部件的一组SEMI符合人体工程学的安全标准。
    • 6. 发明授权
    • Electrostatic chuck support assembly
    • 静电吸盘支架组件
    • US07939784B2
    • 2011-05-10
    • US12362139
    • 2009-01-29
    • Robert StegerKeith Comendant
    • Robert StegerKeith Comendant
    • B23K10/00
    • H01L21/67248H01L21/6831Y10T279/23
    • A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.
    • 调整静电卡盘(ESC)支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度,其中每个部位与给定的电池相关联,从测量中确定任何部分面积的减小 建议每个电池,并根据建议的分数还原从每个电池中的支撑组件表面去除材料,以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性,或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此,热导率调节可以通过包括限定单元结构,确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔,布线,激光加工或砂粒加工可以实现材料去除。