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    • 3. 发明申请
    • INTERMEDIATE TRANSFER CHAMBER, SUBSTRATE PROCESSING SYSTEM, AND EXHAUST METHOD FOR THE INTERMEDIATE TRANSFER CHAMBER
    • 中间传送室,基板处理系统和中间传送室的排气方法
    • US20080031710A1
    • 2008-02-07
    • US11831361
    • 2007-07-31
    • Tsuyoshi MORIYAHiroyuki NakayamaKeisuke KondohHiroki Oka
    • Tsuyoshi MORIYAHiroyuki NakayamaKeisuke KondohHiroki Oka
    • B65H1/24
    • H01L21/67201Y10S414/135
    • An intermediate transfer chamber that can prevent formation of defects in substrates. The intermediate transfer chamber is provided between a loader module being in a first environment where the interior thereof is at a first pressure and contains moisture, and a chamber of a process module being in a second environment where the interior thereof is at a second pressure lower than the first pressure. The intermediate transfer chamber comprises a transfer arm comprising a pick that bidirectionally transfers a substrate between the loader module and the chamber and supports the substrate, a load-lock module exhaust system that exhausts the interior of the intermediate transfer chamber so as to reduce pressure in the intermediate transfer chamber from the first pressure to the second pressure, and a plate-like member that controls the conductance of exhaust on at least a principal surface of the substrate opposite to the pick when the interior of the intermediate transfer chamber is exhausted.
    • 可以防止在基板中形成缺陷的中间转印室。 中间转移室设置在处于第一环境中的第一环境中的装载器模块和处于第二环境中的处于第二环境的第二环境中的第二环境中的处理模块室, 比第一个压力。 中间传送室包括传送臂,传送臂包括在装载器模块和室之间双向传送衬底并支撑衬底的拾取器,负载锁定模块排气系统,其排出中间转印室的内部,以便减少 所述中间转印室从所述第一压力到所述第二压力,以及板状构件,其在所述中间转印室的内部被耗尽时控制与所述拾取器相对的所述基板的至少主表面上的排气的电导。
    • 5. 发明授权
    • Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
    • 中间转移室,衬底处理系统和中间转移室的排气方法
    • US08113757B2
    • 2012-02-14
    • US11831361
    • 2007-07-31
    • Tsuyoshi MoriyaHiroyuki NakayamaKeisuke KondohHiroki Oka
    • Tsuyoshi MoriyaHiroyuki NakayamaKeisuke KondohHiroki Oka
    • B65G65/34
    • H01L21/67201Y10S414/135
    • An intermediate transfer chamber that can prevent formation of defects in substrates. The intermediate transfer chamber is provided between a loader module being in a first environment where the interior thereof is at a first pressure and contains moisture, and a chamber of a process module being in a second environment where the interior thereof is at a second pressure lower than the first pressure. The intermediate transfer chamber comprises a transfer arm comprising a pick that bidirectionally transfers a substrate between the loader module and the chamber and supports the substrate, a load-lock module exhaust system that exhausts the interior of the intermediate transfer chamber so as to reduce pressure in the intermediate transfer chamber from the first pressure to the second pressure, and a plate-like member that controls the conductance of exhaust on at least a principal surface of the substrate opposite to the pick when the interior of the intermediate transfer chamber is exhausted.
    • 可以防止在基板中形成缺陷的中间转印室。 中间转移室设置在处于第一环境中的第一环境中的装载器模块和处于第二环境中的处于第二环境的第二环境中的第二环境中的处理模块室, 比第一个压力。 中间传送室包括传送臂,传送臂包括在装载器模块和室之间双向传送衬底并支撑衬底的拾取器,负载锁定模块排气系统,其排出中间转印室的内部,以便减少 所述中间转印室从所述第一压力到所述第二压力,以及板状构件,其在所述中间转印室的内部被耗尽时控制与所述拾取器相对的所述基板的至少主表面上的排气的电导。
    • 8. 发明申请
    • PLASMA PROCESSING APPARATUS AND METHOD
    • 等离子体加工设备和方法
    • US20120285623A1
    • 2012-11-15
    • US13559373
    • 2012-07-26
    • Tsuyoshi MORIYAHiroyuki Nakayama
    • Tsuyoshi MORIYAHiroyuki Nakayama
    • H01L21/3065B05C11/00
    • H01J37/32431H01J2237/022
    • There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
    • 提供了一种等离子体处理装置,其包括等离子体产生单元,用于在处理室中产生等离子体,其中对作为待处理对象的基板进行设定处理。 等离子体处理装置还包括一个粒子移动单元,用于在通过使用等离子体进行基板上的处理的同时,在处理室中的基板上方的区域中,将基板上方的区域中的颗粒静电驱动。 此外,提供了一种等离子体处理装置的等离子体处理方法,其包括以下步骤:在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。