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1. 发明授权

US5970294A Cylindrical structural body for use in an image forming apparatus and method of producing the same 失效
标题翻译：用于图像形成装置的圆柱形结构体及其制造方法
公开(公告)号：US5970294A
公开(公告)日：1999-10-19
申请号：US132978
申请日：1998-08-12
申请人： Kenji Narita , Yasuhiro Hujimori , Tsuyoshi Imamura , Makoto Nakamura , Kyota Koetuka , Kenichi Ishiguro , Takeo Araki , Takahiro Yasunaga
发明人： Kenji Narita , Yasuhiro Hujimori , Tsuyoshi Imamura , Makoto Nakamura , Kyota Koetuka , Kenichi Ishiguro , Takeo Araki , Takahiro Yasunaga
IPC分类号： B29C57/00 , F16C13/00 , G03G15/08 , G03G15/09 , G03G15/00
CPC分类号： G03G15/0818 , B29C57/00 , F16C13/00 , G03G15/0928 , Y10T29/49556 , Y10T29/53109
摘要： A cylindrical structural body for use in an image forming apparatus and a method of producing the same are disclosed. The structural includes a cylindrical sleeve and flanges or similar end members respectively affixed to opposite ends of the sleeve. The flanges can be firmly and easily affixed to the sleeve without causing the sleeve to deform. The structural body is therefore low cost and highly accurate.
摘要翻译：公开了一种用于图像形成装置的圆柱形结构体及其制造方法。该结构包括圆柱形套筒和分别固定在套筒的相对两端的凸缘或相似的端部构件。凸缘可以牢固且容易地固定到套筒上而不会使套筒变形。因此，结构体成本低，准确度高。

2. 发明授权

US6112042A Developing device and developing roller therefor 有权
标题翻译：显影装置和显影辊
公开(公告)号：US6112042A
公开(公告)日：2000-08-29
申请号：US432212
申请日：1999-11-03
申请人： Tsuyoshi Imamura , Makoto Nakamura , Kyota Koetuka , Kenji Narita , Kenichi Ishiguro
发明人： Tsuyoshi Imamura , Makoto Nakamura , Kyota Koetuka , Kenji Narita , Kenichi Ishiguro
IPC分类号： G03G15/09 , H01F7/02 , H01F13/00 , H01F41/02
CPC分类号： G03G15/0921 , Y10S264/58
摘要： A developing roller is made up of a magnet member and a sleeve surrounding the magnet member. A sophisticated magnetic characteristic including a repulsive pole can be easily formed on the surface of the sleeve. The repulsive pole causes a developer to be sharply released from the surface of the sleeve. A developing device including the developing roller is also disclosed.
摘要翻译：显影辊由磁性构件和围绕磁体构件的套筒构成。可以容易地在套筒的表面上形成包括排斥极的复杂的磁特性。排斥极引起显影剂从套筒的表面急剧释放。还公开了包括显影辊的显影装置。

3. 发明授权

US6070038A Developing device and developing roller therefor 有权
公开(公告)号：US6070038A
公开(公告)日：2000-05-30
申请号：US160591
申请日：1998-08-25
申请人： Tsuyoshi Imamura , Makoto Nakamura , Kyota Koetuka , Kenji Narita , Kenichi Ishiguro
发明人： Tsuyoshi Imamura , Makoto Nakamura , Kyota Koetuka , Kenji Narita , Kenichi Ishiguro
IPC分类号： G03G15/09 , H01F7/02 , H01F13/00 , H01F41/02
CPC分类号： G03G15/0921 , Y10S264/58
摘要： A developing roller is made up of a magnet member and a sleeve surrounding the magnet member. A sophisticated magnetic characteristic including a repulsive pole can be easily formed on the surface of the sleeve. The repulsive pole causes a developer to be sharply released from the surface of the sleeve. A developing device including the developing roller is also disclosed.

4. 发明授权

US06330415B1 Developing device and magnet roller for developing device 有权
标题翻译：用于显影装置的显影装置和磁辊
公开(公告)号：US06330415B1
公开(公告)日：2001-12-11
申请号：US09577156
申请日：2000-05-24
申请人： Tsuyoshi Imamura , Kyohta Koetsuka , Kenichi Ishiguro
发明人： Tsuyoshi Imamura , Kyohta Koetsuka , Kenichi Ishiguro
IPC分类号： G03G1509
CPC分类号： B82Y15/00 , G03G15/0921
摘要： A developing device which prevents bias of a developer caused by an axial magnetic force of a magnet roller, and which can form an image uniform in the axial direction; and a magnet roller for a developing device which is used in the above developing device and is reduced in axial magnetic force. The developing device includes a rotatable sleeve which carries a developer on the surface thereof, a fixed magnet roller which is provided within the sleeve and has a plurality magnetic poles, and a doctor blade which controls the amount of developer carried on the sleeve. The developing device is constructed so that among the plurality of magnetic poles of the magnet roller, the ratio of the axial magnetic flux density to the radial magnetic flux density of a magnetic pole opposing the doctor blade is 2.5/100 or less in a central portion in the axial direction.
摘要翻译：一种防止由磁辊的轴向磁力引起的显影剂的偏压并且可以在轴向上形成均匀的显影装置; 以及用于上述显影装置中并减小轴向磁力的显影装置用磁辊。显影装置包括：可旋转套筒，其在其表面上承载显影剂;固定磁辊，其设置在套筒内并具有多个磁极;以及刮刀，其控制在套筒上承载的显影剂的量。显影装置被构造成使得在磁辊的多个磁极中，与刮刀相对的磁极的轴向磁通密度与径向磁通密度之比在中心部分为2.5 / 100或更小在轴向上。

5. 发明申请

US20100148415A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20100148415A1
公开(公告)日：2010-06-17
申请号：US12654837
申请日：2010-01-06
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： B23Q3/00
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基体支撑体由主体部分和支撑部分形成。在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。将基板放置在支撑部上。支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

6. 发明授权

US07138206B2 Method of manufacturing separator for fuel cell 失效
标题翻译：制造燃料电池隔板的方法
公开(公告)号：US07138206B2
公开(公告)日：2006-11-21
申请号：US10482982
申请日：2002-06-26
申请人： Takashi Yoshida , Kenichi Ishiguro , Yoshitsugu Nishi
发明人： Takashi Yoshida , Kenichi Ishiguro , Yoshitsugu Nishi
IPC分类号： H01M2/00 , H01M2/14 , H01M2/16
CPC分类号： B29C43/021 , B29C43/203 , B29C43/36 , B29C2043/023 , B29C2043/3665 , B29C2043/3668 , B29K2503/04 , B29L2031/3468 , H01M8/0213 , H01M8/0221 , H01M8/0226 , H01M8/0258 , H01M8/0263 , H01M8/0267 , H01M8/04029 , H01M8/04074 , H01M8/2483 , Y02P70/56
摘要： In manufacturing a separator for use in a fuel cell, first, a core (31, 94) is interposed between two preforms (17, 90, 101) and a with-core separator (41, 95, 107) is formed. After this, the core is melted by heating and discharged to form multiple cooling water passages (54). Because consequently there is no need to bring separators together to form the cooling water passages, a seal becomes unnecessary. Also, since there is no need to bring separators together the electrical contact resistance also falls.
摘要翻译：在制造用于燃料电池的隔板时，首先，在两个预制件（17,90,101）之间插入一个铁芯（31,94），并形成一个铁心隔板（41,95,107）。此后，芯体通过加热熔化并排出以形成多个冷却水通道（54）。因此，不需要将分离器一起形成冷却水通道，因此不需要密封。此外，由于不需要将分离器放在一起，所以电接触电阻也下降。

7. 发明授权

US08294867B2 Liquid crystal display having a terminal portion and a sealing member wherein neither a first or a second substrate extends beyond an outer periphery of the sealing member along a side of the display 有权
标题翻译：具有端子部分和密封部件的液晶显示器，其中第一或第二基板都不沿着显示器的一侧延伸超过密封部件的外周
公开(公告)号：US08294867B2
公开(公告)日：2012-10-23
申请号：US12602694
申请日：2008-04-04
申请人： Noriyuki Ohashi , Mutsumi Nakajima , Kenichi Ishiguro , Shohichi Andoh
发明人： Noriyuki Ohashi , Mutsumi Nakajima , Kenichi Ishiguro , Shohichi Andoh
IPC分类号： G02F1/1345 , G02F1/1339 , C09K19/52
CPC分类号： G02F1/1345 , G02F1/1339 , G02F2001/13456
摘要： At least one side of a sealing member is formed on an outer edge of a first substrate, and a common transfer terminal portion is formed along at least a part of the sealing member formed on the outer edge of the first substrate.
摘要翻译：密封件的至少一侧形成在第一基板的外边缘上，沿着形成在第一基板的外边缘上的密封件的至少一部分形成共同的转移端子部分。

8. 发明授权

US07667301B2 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 有权
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US07667301B2
公开(公告)日：2010-02-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

9. 发明申请

US20090186489A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20090186489A1
公开(公告)日：2009-07-23
申请号：US12382400
申请日：2009-03-16
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

10. 发明申请

US20070194411A1 Thermal Treatment Apparatus, Method For Manufacturing Semiconductor Device, And Method For Manufacturing Substrate 有权
标题翻译：热处理装置，制造半导体装置的方法和制造基板的方法
公开(公告)号：US20070194411A1
公开(公告)日：2007-08-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

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