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1. 发明申请

US20100148415A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20100148415A1
公开(公告)日：2010-06-17
申请号：US12654837
申请日：2010-01-06
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： B23Q3/00
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基体支撑体由主体部分和支撑部分形成。在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。将基板放置在支撑部上。支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

2. 发明授权

US07667301B2 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 有权
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US07667301B2
公开(公告)日：2010-02-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

3. 发明申请

US20090186489A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20090186489A1
公开(公告)日：2009-07-23
申请号：US12382400
申请日：2009-03-16
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

4. 发明申请

US20070194411A1 Thermal Treatment Apparatus, Method For Manufacturing Semiconductor Device, And Method For Manufacturing Substrate 有权
标题翻译：热处理装置，制造半导体装置的方法和制造基板的方法
公开(公告)号：US20070194411A1
公开(公告)日：2007-08-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

5. 发明申请

US20070275570A1 Heat Treatment Apparatus 审中-公开
标题翻译：热处理设备
公开(公告)号：US20070275570A1
公开(公告)日：2007-11-29
申请号：US10573025
申请日：2005-01-20
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
IPC分类号： H01L21/00
CPC分类号： H01L21/67303 , H01L21/324 , H01L21/67309
摘要： A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.
摘要翻译：一种热处理装置，其中由支撑体支撑的基板之间的间隔减小，使得可以增加待处理的基板的数量。热处理装置具有用于处理基板的反应炉和用于在反应炉中多级支撑基板的支撑件。支撑件具有与基板接触的支撑板和用于支撑支撑板的支撑构件。支撑板和支撑构件在厚度方向上的至少一部分彼此重叠。

6. 发明授权

US07865070B2 Heat treating apparatus 有权
标题翻译：热处理设备
公开(公告)号：US07865070B2
公开(公告)日：2011-01-04
申请号：US11578963
申请日：2005-03-22
申请人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
发明人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
IPC分类号： A21B2/00
CPC分类号： H01L21/67306 , H01L21/324 , H01L21/67109 , H01L21/67309
摘要： To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
摘要翻译：防止由于突起造成的两个滑动，以及由于过度平滑而产生的粘合力引起的滑移。热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra为1μm〜1000μm。可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

7. 发明申请

US20080267598A1 Heat Treating Apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20080267598A1
公开(公告)日：2008-10-30
申请号：US11578963
申请日：2005-03-22
申请人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
发明人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
IPC分类号： A21B2/00
CPC分类号： H01L21/67306 , H01L21/324 , H01L21/67109 , H01L21/67309
摘要： [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.[Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
摘要翻译： [问题]防止由于凸起造成的两个滑移，以及由于过度平滑而产生的粘合力引起的滑移。解决问题的手段热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra设定为1μm〜1000μm。可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

8. 发明授权

US07901206B2 Heat-treating apparatus and method of producing substrates 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US07901206B2
公开(公告)日：2011-03-08
申请号：US11887004
申请日：2006-03-27
申请人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
发明人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
IPC分类号： F27D1/18 , F27D3/16
CPC分类号： H01L21/67017 , H01L21/67109
摘要： A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
摘要翻译：提供一种能够实现保持高度安全性的高精度加工的热处理装置及其制造方法。热处理装置包括用于处理基板的反应管; 用于支撑反应管的歧管; 和设置在反应管周围的加热器以加热反应管内部的加热器; 其中所述反应管和所述歧管在它们的连续平坦表面彼此接触时彼此接触; 盖构件被设置成从外侧覆盖反应管和歧管之间的接触部分; 并且盖构件设置有至少一个与形成在盖构件，反应管和歧管之间的空间连通的气体供给口或排气口。

9. 发明申请

US20090016854A1 Heat-treating apparatus and method of producing substrates 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US20090016854A1
公开(公告)日：2009-01-15
申请号：US11887004
申请日：2006-03-27
申请人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
发明人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
IPC分类号： B66C17/08
CPC分类号： H01L21/67017 , H01L21/67109
摘要： A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
摘要翻译：提供一种能够实现保持高度安全性的高精度加工的热处理装置及其制造方法。热处理装置包括用于处理基板的反应管; 用于支撑反应管的歧管; 和设置在反应管周围的加热器以加热反应管内部的加热器; 其中所述反应管和所述歧管在它们的连续平坦表面彼此接触时彼此接触; 盖构件被设置成从外侧覆盖反应管和歧管之间的接触部分; 并且盖构件设置有至少一个与形成在盖构件，反应管和歧管之间的空间连通的气体供给口或排气口。

10. 发明授权

US08889533B2 Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法，制造衬底和衬底处理设备的方法
公开(公告)号：US08889533B2
公开(公告)日：2014-11-18
申请号：US13580933
申请日：2011-02-22
申请人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
发明人： Takafumi Sasaki , Yoshinori Imai , Koei Kuribayashi , Sadao Nakashima
IPC分类号： H01L21/20 , H01L21/36 , C23C16/455 , C23C16/32 , H01L21/02
CPC分类号： C23C16/45578 , C23C16/325 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , Y10S438/931
摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
摘要翻译：通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流入口在这些气体流到达基板之前彼此交叉。制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

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