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1. 发明专利

JP2005242724A Commodity supply device 审中-公开
标题翻译：商品供应设备
公开(公告)号：JP2005242724A
公开(公告)日：2005-09-08
申请号：JP2004052642
申请日：2004-02-27
申请人： Iwao Nakamura , Kazutoshi Sengoku , 岩雄中村 , 和利仙石
发明人： SENGOKU KAZUTOSHI , NAKAMURA IWAO
IPC分类号： G07F11/00 , G07F11/42 , G07F17/00
摘要： PROBLEM TO BE SOLVED: To provide a commodity supply device that can reduce a maintenance cost, shorten the time required for renting, selling, etc. of commodities, and increase the number of commodities that can be accommodated.
SOLUTION: The commodity supply device comprises mainly an enclosure 10 of almost rectangular solid shape in which a pair of display racks 2 capable of displaying a video V are disposed on the front face 8 and on the back face 9, a taking-out restriction part 4 that is disposed inside the enclosure 10 and restricts an action of taking out the video V from the display rack 2, a part 5 for releasing the restriction that is disposed inside the enclosure 10 and releases the restricted state of taking-out effected by the taking-out restriction part 4, and an operation panel part that is disposed on the front face 8 of the enclosure and operates a commodity supply device 1. Taking out of the video V is restricted by a locking lever in a restriction position of the taking out restriction part 4. The locking lever is turned to the release position by the control of a release rod 31 and a push-out rod 21, and one video is pushed out from the display rack 2 by the push-out rod 21 for renting.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以降低维护成本，缩短商品租赁，出售等所需时间的商品供应装置，并增加可以容纳的商品数量。
解决方案：商品供应装置主要包括几乎矩形实心形状的外壳10，其中能够显示视频V的一对显示架2设置在前表面8和背面9上，排出限制部分4，其设置在外壳10的内部并限制从显示架2取出视频V的动作;用于释放设置在外壳10内的限制的部分5，并释放限制的取出状态由取出限制部分4实现的操作面板部分和设置在外壳的前表面8上并操作商品供应装置1的操作面板部分。从视频V中取出的视频被限制位置处的锁定杆限制通过释放杆31和推出杆21的控制将锁定杆转动到释放位置，并且通过推出杆将一个视频从展示架2推出 21出租。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JPS5755148A Deodorizing method 失效
标题翻译：除臭方法
公开(公告)号：JPS5755148A
公开(公告)日：1982-04-01
申请号：JP13104780
申请日：1980-09-20
申请人： Iwao Nakamura
发明人： NAKAMURA IWAO , ENDOU HIROSHI
IPC分类号： A61L9/16 , A61L9/00

3. 发明专利

JPS599172A Treatment of liquid containing metallic ion 失效
标题翻译：含金属离子液体的处理
公开(公告)号：JPS599172A
公开(公告)日：1984-01-18
申请号：JP11665982
申请日：1982-07-05
申请人： Iwao Nakamura
发明人： NAKAMURA IWAO
IPC分类号： C02F1/469 , C23F1/00 , C23G1/36
CPC分类号： C23G1/36
摘要： PURPOSE:To recover metallic ions as metallic powder and to treat liquid for using circulatory or for discharging, by partitioning an electrodialysis cell with both cationic and anionic ion exchange membranes, putting liquid contg. metallic ions in the central partitioned chamber, and performing electrodialysis. CONSTITUTION:An electrodialysis cell is partitioned to three chambers by both ion exchange membranes of a cation exchange membrane 5 mounted with a louver 7 for preventing sticking of deposits and an anion exchange membrane 6. Electrolytes such as dilute acids, dilute alkalis or salt solns. thereof according to the kinds of the liquid to be treated are put into cathodic and anodic dialysis chambers 18, 19 provided with a cathode electrode plate 2 and an anode electrode plate 1, and waste liquid contg. metallic ions in a high concn. generated from a treating state for metallic surface such as etching or the like is put into the central dialysis chamber 17. While these liquids are circulated with pumps 9, 14, 15, and while the plate 2 mounted to an electrode bar 3 is oscillated with a locking device 4, electric current is flowed to both plates 1, 2 whereby electrodialysis is accomplished and the metallic ions are recovered as the metallic powder having high purity from the surface of the cathode 2.
摘要翻译：目的：为了回收金属离子作为金属粉末，并处理液体进行循环或排放，通过用阳离子和阴离子交换膜分离电渗析池，放置液体。中心分隔室中的金属离子，并进行电渗析。构成：通过安装有百叶窗7的阳离子交换膜5的两个离子交换膜将电渗析池分隔成三个室，以防止沉积物的粘附和阴离子交换膜6.电解质如稀酸，稀碱或盐溶液。根据待处理液体的种类将其放入设置有阴极电极板2和阳极电极板1的阴极和阳极透析室18,19中，高浓度金属离子从金属表面如蚀刻处理状态产生的等离子体被放入中央透析室17.当这些液体用泵9,14,15进行循环时，并且安装在电极棒3上的板2与锁定装置4，电流流到两个板1,2，由此实现电渗析，并且金属离子作为从阴极2的表面具有高纯度的金属粉末回收。

4. 发明申请

US20100029092A1 Semiconductor Device Producing Method, Substrate Producing Method and Substrate Processing Apparatus 有权
标题翻译：半导体器件生产方法，基板生产方法和基板加工设备
公开(公告)号：US20100029092A1
公开(公告)日：2010-02-04
申请号：US11887347
申请日：2006-03-30
申请人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
发明人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
IPC分类号： H01L21/30 , B05C11/00
CPC分类号： H01L21/02238 , H01L21/31662 , H01L21/67109
摘要： A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
摘要翻译：提供了一种向反应炉（200）提供多个彼此反应的气体和惰性气体并在大气压下氧化基板（20）的步骤的步骤，以及将基板（20））从反应炉氧化后。在氧化步骤中，通过根据大气压力变化改变惰性气体的流量，使氧化气体的分压保持恒定，并且基于先前计算的流动量计算惰性气体的流量由气体和气体的反应产生的气体保持不被反应消耗。

5. 发明申请

US20070292814A1 Heat Treatment Apparatus and Method of Manufacturing Substrates 失效
标题翻译：热处理设备及其制造方法
公开(公告)号：US20070292814A1
公开(公告)日：2007-12-20
申请号：US11663852
申请日：2005-09-29
申请人： Ryota Sasajima , Iwao Nakamura
发明人： Ryota Sasajima , Iwao Nakamura
IPC分类号： H01L21/324 , H01L21/22 , H01L21/683 , H01L21/31
CPC分类号： H01L21/68735 , H01L21/67109 , H01L21/68771
摘要： A heat treatment device and a method of manufacturing substrates capable of reducing the slippage of the substrates when the substrates are supported on support parts comprising plate-like members. The device comprises a support device having the support parts in contact with the substrates and a body part supporting the support parts. Each of the support parts comprises the plate-like members supporting the substrate so as not to come into contact with the peripheral edge portion of the substrate, and a non-contact part communication with the outside without coming into contact with the substrate is formed in the substrate placing surface of the support part. The overall opening area of the portion of the non-contact part communicating with the outside is 25 to 94% of the overall area of the substrate placing surface.
摘要翻译：一种热处理装置及其制造方法，当基板被支撑在包括板状构件的支撑部上时，可以减少基板的滑动。该装置包括支撑装置，其具有与基板接触的支撑部分和支撑支撑部件的主体部分。每个支撑部分包括支撑基板的板状部件，以便不与基板的周缘部分接触，并且在与基板接触的情况下形成与外部的非接触部分连通，而不与基板接触支撑部的基板载置面。与外部连通的非接触部分的部分的整个开口面积是基板放置表面的总面积的25至94％。

6. 发明申请

US20050010636A1 Print control method, server and program 审中-公开
标题翻译：打印控制方式，服务器和程序
公开(公告)号：US20050010636A1
公开(公告)日：2005-01-13
申请号：US10628306
申请日：2003-07-29
申请人： Iwao Nakamura , Hiroaki Mikami , Tatsuya Ichikawa
发明人： Iwao Nakamura , Hiroaki Mikami , Tatsuya Ichikawa
IPC分类号： B41J29/38 , B41J5/30 , G06F3/12 , G06F15/16
CPC分类号： G06F3/1288 , G06F3/1205 , G06F3/1253
摘要： A print control method using a server and a plurality of print systems that can communicate with each other through a network, the print control method includes: a print request step of transmitting to the server a print information request which requests print object data and control information for printing the print object data by the print system, in the print control system, a transmission step of transmitting the print object data and the control information to the print system when the print information request is received, in the server, and a print step of printing the print object data using the control information, in the print system.
摘要翻译：一种使用可以通过网络相互通信的服务器和多个打印系统的打印控制方法，所述打印控制方法包括：打印请求步骤，向所述服务器发送请求打印对象数据和控制信息的打印信息请求用于通过打印系统在打印控制系统中打印打印对象数据的传输步骤，当在服务器中接收到打印信息请求时，将打印对象数据和控制信息发送到打印系统，以及打印步骤在打印系统中使用控制信息打印打印对象数据。

7. 发明授权

US4555840A Process for positioning and aligning dies 失效
标题翻译：用于定位和对准模具的工艺
公开(公告)号：US4555840A
公开(公告)日：1985-12-03
申请号：US480283
申请日：1983-03-30
申请人： Iwao Nakamura
发明人： Iwao Nakamura
IPC分类号： B21D37/04 , B21D37/12 , B21D37/14 , B23Q3/00
CPC分类号： B21D37/12 , Y10T29/49897 , Y10T29/53913
摘要： A process and an apparatus for accurately locating and aligning dies on base plates is disclosed. The alignment of the dies is made by assembling a pair of the base plates in the form of a die set using jigs to be inserted into openings of the respective base plates for accurately aligning the base plate in vertically parallel relationship keeping space therebetween and for permitting the upper base plate to effect vertically reciprocal movement to accurately locate and align the dies with respect to the base plates. The apparatus comprises a pair of base plates and jigs for accurately aligning the base plates in vertically parallel relationship and for permitting the upper base plate to effect vertically reciprocal movement along the jigs to accurately locate and align the dies with respect to the base plates.
摘要翻译：公开了一种用于在基板上精确定位和对准模具的工艺和设备。模具的对准是通过使用夹具的模具组合形式的一对基板进行组装，以插入各个基板的开口中，以使垂直平行的关系精确地对准基板，从而保持空间，并且允许上基板实现垂直往复移动，以精确地定位和对准模具相对于基板。该装置包括一对基板和夹具，用于以垂直平行的关系精确地对准底板，并允许上基板沿夹具进行垂直往复运动，以精确地定位和对齐模具相对于基板。

8. 发明授权

US07891975B2 Heat treatment apparatus and method of manufacturing substrate 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US07891975B2
公开(公告)日：2011-02-22
申请号：US11658160
申请日：2005-08-01
申请人： Ryota Sasajima , Iwao Nakamura , Akira Morohashi , Ryuji Yamamoto
发明人： Ryota Sasajima , Iwao Nakamura , Akira Morohashi , Ryuji Yamamoto
IPC分类号： F27D5/00
CPC分类号： H01L21/67109 , C30B35/00 , H01L21/31662 , H01L21/324 , H01L21/67309 , H01L21/68735 , H01L21/68771
摘要： Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
摘要翻译：提供热处理装置和制造基板的方法，其中可以防止通过支撑条和支撑构件之间的摩擦作用产生的颗粒滴。热处理装置10具有用于处理基板的反应器40和用于将基板54支撑在反应器40中的支撑工具30.支撑工具30具有与基板54接触的支撑部57和支撑条67 用于支撑支撑部分57.支撑部分57的后部具有凸部或凹部，并且支撑部54的后部构造成不与支撑条67的边缘接触，并且与支撑条67的顶部在内部比支撑条67的边缘。

9. 发明授权

US07667301B2 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 有权
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US07667301B2
公开(公告)日：2010-02-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

10. 发明申请

US20090186489A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20090186489A1
公开(公告)日：2009-07-23
申请号：US12382400
申请日：2009-03-16
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

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