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1. 发明申请

US20100148415A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20100148415A1
公开(公告)日：2010-06-17
申请号：US12654837
申请日：2010-01-06
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： B23Q3/00
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基体支撑体由主体部分和支撑部分形成。在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。将基板放置在支撑部上。支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

2. 发明授权

US07667301B2 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 有权
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US07667301B2
公开(公告)日：2010-02-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

3. 发明申请

US20090186489A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20090186489A1
公开(公告)日：2009-07-23
申请号：US12382400
申请日：2009-03-16
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

4. 发明申请

US20070194411A1 Thermal Treatment Apparatus, Method For Manufacturing Semiconductor Device, And Method For Manufacturing Substrate 有权
标题翻译：热处理装置，制造半导体装置的方法和制造基板的方法
公开(公告)号：US20070194411A1
公开(公告)日：2007-08-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

5. 发明申请

US20070275570A1 Heat Treatment Apparatus 审中-公开
标题翻译：热处理设备
公开(公告)号：US20070275570A1
公开(公告)日：2007-11-29
申请号：US10573025
申请日：2005-01-20
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
IPC分类号： H01L21/00
CPC分类号： H01L21/67303 , H01L21/324 , H01L21/67309
摘要： A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.
摘要翻译：一种热处理装置，其中由支撑体支撑的基板之间的间隔减小，使得可以增加待处理的基板的数量。热处理装置具有用于处理基板的反应炉和用于在反应炉中多级支撑基板的支撑件。支撑件具有与基板接触的支撑板和用于支撑支撑板的支撑构件。支撑板和支撑构件在厚度方向上的至少一部分彼此重叠。

6. 发明授权

US07865070B2 Heat treating apparatus 有权
标题翻译：热处理设备
公开(公告)号：US07865070B2
公开(公告)日：2011-01-04
申请号：US11578963
申请日：2005-03-22
申请人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
发明人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
IPC分类号： A21B2/00
CPC分类号： H01L21/67306 , H01L21/324 , H01L21/67109 , H01L21/67309
摘要： To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
摘要翻译：防止由于突起造成的两个滑动，以及由于过度平滑而产生的粘合力引起的滑移。热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra为1μm〜1000μm。可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

7. 发明申请

US20080267598A1 Heat Treating Apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20080267598A1
公开(公告)日：2008-10-30
申请号：US11578963
申请日：2005-03-22
申请人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
发明人： Iwao Nakamura , Naoto Nakamura , Sadao Nakashima
IPC分类号： A21B2/00
CPC分类号： H01L21/67306 , H01L21/324 , H01L21/67109 , H01L21/67309
摘要： [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.[Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
摘要翻译： [问题]防止由于凸起造成的两个滑移，以及由于过度平滑而产生的粘合力引起的滑移。解决问题的手段热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra设定为1μm〜1000μm。可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

8. 发明授权

US08268731B2 Semiconductor device producing method, substrate producing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板的制造方法以及基板处理装置
公开(公告)号：US08268731B2
公开(公告)日：2012-09-18
申请号：US11887347
申请日：2006-03-30
申请人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
发明人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
IPC分类号： H01L21/31
CPC分类号： H01L21/02238 , H01L21/31662 , H01L21/67109
摘要： Disclosed is a producing method of a semiconductor device, including: loading a substrate into a reaction tube; oxidizing the substrate under an atmospheric pressure by supplying a plurality of kinds of gases which react with each other and an inert gas into the reaction tube; and unloading, from the reaction tube, the substrate after the oxidizing, wherein in the oxidizing, a flow rate of the inert gas is varied in accordance with a variation of the atmospheric pressure to keep constant a partial pressure of an oxidizing gas or partial pressures of oxidizing gases in the reaction tube, and the flow rate of the inert gas is calculated based on a pre-calculated flow rate of a gas or pre-calculated flow rates of gases produced by reaction of the plurality of gases and a pre-calculated flow rate of a gas which is not consumed by the reaction and which remains or pre-calculated flow rates of gases which are not consumed by the reaction and which remain.
摘要翻译：公开了一种半导体器件的制造方法，包括：将基板装载到反应管中; 通过将多种彼此反应的气体和惰性气体供应到反应管中，在大气压下氧化基板; 并且在氧化之后从反应管中卸载基板，其中在氧化中，惰性气体的流量根据大气压力的变化而变化，以保持氧化气体的分压或分压的反应管中的氧化气体，并且惰性气体的流量基于气体的预先计算的流量或通过多个气体的反应产生的预先计算的气体流量和预先计算的未被反应消耗的气体的流速，并且保留或预先计算的未被反应消耗并保留的气体的流速。

9. 发明申请

US20100029092A1 Semiconductor Device Producing Method, Substrate Producing Method and Substrate Processing Apparatus 有权
标题翻译：半导体器件生产方法，基板生产方法和基板加工设备
公开(公告)号：US20100029092A1
公开(公告)日：2010-02-04
申请号：US11887347
申请日：2006-03-30
申请人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
发明人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
IPC分类号： H01L21/30 , B05C11/00
CPC分类号： H01L21/02238 , H01L21/31662 , H01L21/67109
摘要： A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
摘要翻译：提供了一种向反应炉（200）提供多个彼此反应的气体和惰性气体并在大气压下氧化基板（20）的步骤的步骤，以及将基板（20））从反应炉氧化后。在氧化步骤中，通过根据大气压力变化改变惰性气体的流量，使氧化气体的分压保持恒定，并且基于先前计算的流动量计算惰性气体的流量由气体和气体的反应产生的气体保持不被反应消耗。

10. 发明授权

US08509614B2 Subscriber premises-side optical network unit 有权
标题翻译：用户房屋侧光网络单元
公开(公告)号：US08509614B2
公开(公告)日：2013-08-13
申请号：US13253777
申请日：2011-10-05
申请人： Nobuhiko Hattori , Naoto Nakamura
发明人： Nobuhiko Hattori , Naoto Nakamura
IPC分类号： H04B10/08 , H04B17/00
CPC分类号： H04B10/272 , H04Q2213/1301
摘要： [Problem]This invention aims at solving the problem of how a subscriber premises-side optical network unit can be switched to an evaluation mode without the use of a jig board.[Means for Solving the Problem]The invention refers to a subscriber premises-side optical network unit (ONU 10) which is connected to a center-side optical network unit (OLT 1a) via an optical transmission line (optical fiber 2, 4) and to an external device (switch 6) via an electric signal line (electric signal line 5); comprising a memory (memory switch 15a) the stored content of which can be directly or indirectly rewritten by the external device; a detection part (CPU 15) for detecting that the content of the memory has been rewritten; and a control part (CPU 15) for performing, when the detection part detects that the stored content of the memory has been rewritten, a control whereby the optical sending part which sends optical signals to the optical transmission line is put into a continuous light emission state.
摘要翻译：本发明旨在解决用户住宅侧光网络单元如何在不使用夹具板的情况下切换到评估模式的问题。解决问题的手段本发明涉及经由光传输线路（光纤2,4）与中心侧光网络单元（OLT 1a）连接的用户住宅侧光网络单元（ONU10）并通过电信号线（电信号线5）与外部装置（开关6）连接。包括其存储内容可以由外部设备直接或间接重写的存储器（存储器开关15a）; 用于检测存储器的内容已经被重写的检测部分（CPU 15）以及控制部（CPU15），用于当检测部检测到存储器的存储内容已被重写时，执行将向光传输线发送光信号的光发送部分进行连续发光的控制州。

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