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    • 3. 发明申请
    • SUCTION-BASED RECOVERY CONTROL METHOD AND INK JET PRINTING APPARATUS
    • 基于吸收的恢复控制方法和喷墨打印设备
    • US20120154476A1
    • 2012-06-21
    • US13316856
    • 2011-12-12
    • Tsukasa DoiKiichiro TakahashiAkiko MaruTakatoshi NakanoHiroshi Taira
    • Tsukasa DoiKiichiro TakahashiAkiko MaruTakatoshi NakanoHiroshi Taira
    • B41J29/38
    • B41J2/04563B41J2/0454B41J2/16508B41J2/16532B41J2/19
    • The amount of ink wastage is reduced, even in a case wherein a predetermined amount of air bubbles has grown in a print head at a specific internal temperature and the growth has been settled, and thereafter the temperature in the print head is increased. A suction-based recovery control method, for an ink jet printing apparatus that includes a print head, a temperature detection unit, and a suction-based recovery unit, comprising: a temperature detection step; a temperature judgment step for judging whether the internal temperature of the print head is higher than a reference temperature that is determined based on internal temperatures of the print head that were previously employed; and a suction-based recovery step for permitting the suction-based recovery unit when it is determined at the temperature judgment step that the internal temperature of the print head is higher by the predetermined number of degrees or greater.
    • 即使在特定内部温度下在打印头中生长预定量的气泡并且生长已经稳定的情况下,甚至在打印头中的温度升高之后,也会降低油墨浪费的量。 一种用于包括打印头,温度检测单元和基于吸入的回收单元的喷墨打印设备的基于吸入的恢复控制方法,包括:温度检测步骤; 用于判断打印头的内部温度是否高于基于先前使用的打印头的内部温度确定的参考温度的温度判断步骤; 以及基于吸入的回收步骤,用于当在所述温度判断步骤中确定所述打印头的内部温度高预定数量以上时允许所述基于吸入的回收单元。
    • 4. 发明授权
    • Suction-based recovery control method and ink jet printing apparatus
    • 抽吸式回收控制方法和喷墨打印设备
    • US08752930B2
    • 2014-06-17
    • US13316856
    • 2011-12-12
    • Tsukasa DoiKiichiro TakahashiAkiko MaruTakatoshi NakanoHiroshi Taira
    • Tsukasa DoiKiichiro TakahashiAkiko MaruTakatoshi NakanoHiroshi Taira
    • B41J29/38B41J2/165B41J2/045B41J2/19
    • B41J2/04563B41J2/0454B41J2/16508B41J2/16532B41J2/19
    • The amount of ink wastage is reduced, even in a case wherein a predetermined amount of air bubbles has grown in a print head at a specific internal temperature and the growth has been settled, and thereafter the temperature in the print head is increased. A suction-based recovery control method, for an ink jet printing apparatus that includes a print head, a temperature detection unit, and a suction-based recovery unit, comprising: a temperature detection step; a temperature judgment step for judging whether the internal temperature of the print head is higher than a reference temperature that is determined based on internal temperatures of the print head that were previously employed; and a suction-based recovery step for permitting the suction-based recovery unit when it is determined at the temperature judgment step that the internal temperature of the print head is higher by the predetermined number of degrees or greater.
    • 即使在特定内部温度下在打印头中生长预定量的气泡并且生长已经稳定的情况下,甚至在打印头中的温度升高之后,也会降低油墨浪费的量。 一种用于包括打印头,温度检测单元和基于吸入的回收单元的喷墨打印设备的基于吸入的恢复控制方法,包括:温度检测步骤; 用于判断打印头的内部温度是否高于基于先前使用的打印头的内部温度确定的参考温度的温度判断步骤; 以及基于吸入的回收步骤,用于当在所述温度判断步骤中确定所述打印头的内部温度高预定数量以上时允许所述基于吸入的回收单元。
    • 8. 发明授权
    • Normal pressure CVD process for manufacture of a semiconductor device
through reaction of a nitrogen containing organic source with ozone
    • 用于通过含氮有机源与臭氧的反应来制造半导体器件的常压CVD工艺
    • US5459108A
    • 1995-10-17
    • US98927
    • 1993-07-29
    • Tsukasa DoiYukiko Mori
    • Tsukasa DoiYukiko Mori
    • C23C16/40H01L21/316
    • H01L21/02164C23C16/401H01L21/02219H01L21/02222H01L21/02271H01L21/31608Y10S148/118
    • There is provided a semiconductor device manufacturing process which enables film deposition at low temperatures and can produce an interlayer insulating film of good quality which exhibits good surface smoothing effect. In the TEOS-O.sub.3 system normal pressure CVD process, film growth is carried out by adding to TEOS source a source containing nitrogen in its composition. For the source is used heptamethyl disilazane (chemical formula (CH.sub.3).sub.3 SiN(CH.sub.3)Si(CH.sub.3).sub.3), N, O-bis-trimethylsilyl acetamide (chemical formula (CH.sub.3)C(OSi(CH.sub.3).sub.3)(NSi(CH.sub.3).sub.3)) or tridimethylamino silane (chemical formula (CH.sub.3).sub.2 N).sub.3 SiN). Also, there is provided a semiconductor device manufacturing method which enables film deposition at a uniform growth rate irrespective of the substrate material and can produce a silicon oxide film of good quality which exhibits good surface smoothing effect. An organic source having an Si--N bond in its composition and O.sub.3 are conducted to the substrate and reacted with each other under normal pressure whereby a silicon oxide film is grown on the substrate. The organic source is, for example, hexamethyl disilazane ((CH.sub.3).sub.3 Si--N(H)--Si(CH.sub.3 ).sub.3).
    • 提供了一种半导体器件制造方法,其能够在低温下进行成膜,并且可以制造出具有良好的表面平滑效果的高质量的层间绝缘膜。 在TEOS-O3系统常压CVD工艺中,通过向TEOS源中加入其组成中含氮的源来进行膜生长。 来源是使用七甲基二硅氮烷(化学式(CH 3)3 SiN(CH 3)Si(CH 3)3),N,O-双三甲基甲硅烷基乙酰胺(化学式(CH 3)C(OSi(CH 3)3) )3))或三甲基氨基硅烷(化学式(CH 3)2 N)3 SiN)。 此外,提供了一种半导体器件制造方法,其与基板材料无关地以均匀的生长速率进行膜沉积,并且可以产生具有良好表面平滑效果的良好质量的氧化硅膜。 将其组成中具有Si-N键的有机源和O 3导入基板,并在常压下彼此反应,从而在基板上生长氧化硅膜。 有机源是例如六甲基二硅氮烷((CH 3)3 Si-N(H)-Si(CH 3)3)。
    • 10. 发明申请
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US20060134865A1
    • 2006-06-22
    • US11303583
    • 2005-12-14
    • Hiroyuki InuzukaTsukasa DoiKazumasa Mitsumune
    • Hiroyuki InuzukaTsukasa DoiKazumasa Mitsumune
    • H01L21/336H01L21/44
    • H01L21/76897H01L27/115H01L27/11521
    • According to the present invention, a method of manufacturing a semiconductor device which comprises a matrix of memory cells of the floating gate type is provided in which the silicon nitride layer is deposited as an etching stop layer on a control gate electrode for bottom borderless contact process with the threshold voltage of transistor arrangements being controlled not to change so that the productivity can remain not declined. In particular, the silicon nitride layer (115) is deposited as an etching stop layer on the control gate electrode (105) for bottom borderless contact process so that the concentration of hydrogen (H2) therein stays in a range from 1.5×1021 to 2.6×1021 atoms/cm3. Also, the silicon nitride layer (115) is deposited at a temperature of not higher than 700° C. by a low pressure CVD technique.
    • 根据本发明,提供一种制造半导体器件的方法,该半导体器件包括浮置型存储单元的矩阵,其中氮化硅层作为蚀刻停止层沉积在用于底部无边界接触工艺的控制栅极上 晶体管布置的阈值电压被控制为不改变,使得生产率可以保持不下降。 特别地,氮化硅层(115)作为蚀刻停止层沉积在用于底部无边界接触工艺的控制栅电极(105)上,使得其中的氢(H 2 H 2)的浓度保持在 从1.5×10 21至2.6×10 21原子/ cm 3的范围。 此外,氮化硅层(115)通过低压CVD技术在不高于700℃的温度下沉积。