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1. 发明申请

US20060134865A1 Method of manufacturing a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060134865A1
公开(公告)日：2006-06-22
申请号：US11303583
申请日：2005-12-14
申请人： Hiroyuki Inuzuka , Tsukasa Doi , Kazumasa Mitsumune
发明人： Hiroyuki Inuzuka , Tsukasa Doi , Kazumasa Mitsumune
IPC分类号： H01L21/336 , H01L21/44
CPC分类号： H01L21/76897 , H01L27/115 , H01L27/11521
摘要： According to the present invention, a method of manufacturing a semiconductor device which comprises a matrix of memory cells of the floating gate type is provided in which the silicon nitride layer is deposited as an etching stop layer on a control gate electrode for bottom borderless contact process with the threshold voltage of transistor arrangements being controlled not to change so that the productivity can remain not declined. In particular, the silicon nitride layer (115) is deposited as an etching stop layer on the control gate electrode (105) for bottom borderless contact process so that the concentration of hydrogen (H2) therein stays in a range from 1.5×1021 to 2.6×1021 atoms/cm3. Also, the silicon nitride layer (115) is deposited at a temperature of not higher than 700° C. by a low pressure CVD technique.
摘要翻译：根据本发明，提供一种制造半导体器件的方法，该半导体器件包括浮置型存储单元的矩阵，其中氮化硅层作为蚀刻停止层沉积在用于底部无边界接触工艺的控制栅极上晶体管布置的阈值电压被控制为不改变，使得生产率可以保持不下降。特别地，氮化硅层（115）作为蚀刻停止层沉积在用于底部无边界接触工艺的控制栅电极（105）上，使得其中的氢（H 2 H 2）的浓度保持在从1.5×10 21至2.6×10 21原子/ cm 3的范围。此外，氮化硅层（115）通过低压CVD技术在不高于700℃的温度下沉积。

2. 发明授权

US07402513B2 Method for forming interlayer insulation film 有权
标题翻译：形成层间绝缘膜的方法
公开(公告)号：US07402513B2
公开(公告)日：2008-07-22
申请号：US11034616
申请日：2005-01-12
申请人： Takanori Sonoda , Kazumasa Mitsumune , Kenichiroh Abe , Yushi Inoue , Tsukasa Doi
发明人： Takanori Sonoda , Kazumasa Mitsumune , Kenichiroh Abe , Yushi Inoue , Tsukasa Doi
IPC分类号： H01L21/461 , H01L21/4763 , H01L21/469
CPC分类号： H01L21/0217 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02318 , H01L21/3143 , H01L21/31625 , H01L21/3185 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76837
摘要： It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film.A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ≧3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less.According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.
摘要翻译：本发明的目的是提供一种形成层间绝缘膜的方法，该层间绝缘膜抑制层间绝缘膜中空隙的发生。一种形成本发明的层间绝缘膜的方法，包括以下步骤：（1）在具有该步骤部分的半导体衬底上的包括台阶部分的整个表面上形成氮化硅膜的蚀刻阻挡膜，该半导体衬底具有一个方面比值> = 3; （2）在氮化硅膜上形成杂质掺杂硅酸盐膜的层间绝缘膜; 和（3）通过热处理进行层间绝缘膜的回流，其中控制氮化硅膜的形成，使得氮化硅膜的NH键密度为1.0×10 22个/ cm 3以下。根据本发明的层间绝缘膜的形成方法，即使形成在半导体基板上的台阶部的纵横比为3以上，也能够抑制层间绝缘膜的空隙的发生。此外，可以减少通过回流施加到半导体器件的损坏。

3. 发明申请

US20050159015A1 Method for forming interlayer insulation film 有权
标题翻译：形成层间绝缘膜的方法
公开(公告)号：US20050159015A1
公开(公告)日：2005-07-21
申请号：US11034616
申请日：2005-01-12
申请人： Takanori Sonoda , Kazumasa Mitsumune , Kenichiroh Abe , Yushi Inoue , Tsukasa Doi
发明人： Takanori Sonoda , Kazumasa Mitsumune , Kenichiroh Abe , Yushi Inoue , Tsukasa Doi
IPC分类号： C23C16/34 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/4763 , H01L21/469
CPC分类号： H01L21/0217 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02318 , H01L21/3143 , H01L21/31625 , H01L21/3185 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76837
摘要： It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ≧3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less. According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.
摘要翻译：本发明的目的是提供一种形成层间绝缘膜的方法，该层间绝缘膜抑制层间绝缘膜中空隙的发生。一种形成本发明的层间绝缘膜的方法，包括以下步骤：（1）在具有该步骤部分的半导体衬底上的包括台阶部分的整个表面上形成氮化硅膜的蚀刻阻挡膜，该半导体衬底具有一个方面比值> = 3; （2）在氮化硅膜上形成杂质掺杂硅酸盐膜的层间绝缘膜; 和（3）通过热处理进行层间绝缘膜的回流，其中控制氮化硅膜的形成，使得氮化硅膜的NH键密度为1.0×10 22个/ cm 3以下。根据本发明的层间绝缘膜的形成方法，即使形成在半导体基板上的台阶部的纵横比为3以上，也能够抑制层间绝缘膜的空隙的发生。此外，可以减少通过回流施加到半导体器件的损坏。

4. 发明申请

US20050118833A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050118833A1
公开(公告)日：2005-06-02
申请号：US10998782
申请日：2004-11-30
申请人： Kazumasa Mitsumune , Tsukasa Doi , Yushi Inoue , Kenichirou Abe , Takanori Sonoda
发明人： Kazumasa Mitsumune , Tsukasa Doi , Yushi Inoue , Kenichirou Abe , Takanori Sonoda
IPC分类号： H01L23/522 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/768 , H01L21/469
CPC分类号： H01L21/02129 , H01L21/0217 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76837
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device suppressing the occurrence of voids in an insulating film. A method for manufacturing a semiconductor device according to the present invention comprises the steps of: (1) forming an insulating film 11 composed of a thin silicon nitride film on a semiconductor substrate 1 having at least a necessary element and a recessed part 6 so as to cover the recessed part 6; (2) modifying the surface of the insulating film 11; and (3) forming a BPSG film 15 as an interlayer insulation film on the insulating film. The occurrence of voids in the interlayer insulation film 15 is suppressed by the process for modifying the surface.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件抑制绝缘膜中空隙的发生。根据本发明的制造半导体器件的方法包括以下步骤：（1）在具有至少必需元件的半导体衬底1上形成由氮化硅薄膜构成的绝缘膜11，以及凹入部分6，以便覆盖凹部6; （2）改性绝缘膜11的表面; 和（3）在绝缘膜上形成作为层间绝缘膜的BPSG膜15。通过改变表面的方法来抑制层间绝缘膜15中的空隙的发生。

5. 发明申请

US20130021397A1 INKJET RECORDING APPARATUS 有权
标题翻译：喷墨记录装置
公开(公告)号：US20130021397A1
公开(公告)日：2013-01-24
申请号：US13553451
申请日：2012-07-19
申请人： Tsukasa Doi , Kiichiro Takahashi , Akiko Maru , Takatoshi Nakano , Genji Inada , Satoshi Kimura
发明人： Tsukasa Doi , Kiichiro Takahashi , Akiko Maru , Takatoshi Nakano , Genji Inada , Satoshi Kimura
IPC分类号： B41J29/38
CPC分类号： B41J2/04563 , B41J2/0458 , B41J2/16532 , B41J2/1752 , B41J2/17553 , B41J2/17566 , B41J2/195 , B41J29/38
摘要： An inkjet recording apparatus capable of determining an amount of bubbles in an ink flow path and performing suction recovery operation at an appropriate timing is provided. The inkjet recording apparatus includes a recording head including a nozzle for discharging ink and a flow path forming member forming an ink flow path for supplying the ink to the nozzle, a suction unit configured to suck the ink from the recording head, and a temperature detection unit configured to detect a temperature in the recording head. The inkjet recording apparatus includes a control unit configured, based on an amount of gas in the flow path forming member before the ink is filled in the ink flow path, and an amount of gas in equilibrium in the flow path forming member after the ink is filled in the ink flow path, to control the operation of the suction unit.
摘要翻译：提供一种能够确定油墨流路中的气泡量并在适当的时刻进行抽吸恢复操作的喷墨记录装置。喷墨记录装置包括：记录头，其包括用于排出墨的喷嘴;以及流路形成构件，形成用于将墨水供应到喷嘴的墨流路;流动单元，被配置为从记录头吸取墨;以及温度检测被配置为检测记录头中的温度的单元。喷墨记录装置包括控制单元，该控制单元基于墨水填充在墨水流路中之前的流路形成构件中的气体量，以及在墨水之后的流路形成构件中的气体平衡量填充墨水流路，以控制抽吸单元的操作。

6. 发明授权

US5973400A Semiconductor device having a copper wiring layer formed on a base via a barrier layer of amorphous tantalum carbide 失效
标题翻译：具有经由非晶碳化钽的阻挡层形成在基底上的铜布线层的半导体器件
公开(公告)号：US5973400A
公开(公告)日：1999-10-26
申请号：US822126
申请日：1997-03-21
申请人： Masanori Murakami , Takeo Oku , Tsukasa Doi
发明人： Masanori Murakami , Takeo Oku , Tsukasa Doi
IPC分类号： C23C14/06 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L23/48
CPC分类号： H01L23/53238 , H01L2924/0002
摘要： A semiconductor device including, a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbide.
摘要翻译：一种半导体器件，包括：主要成分为铜的布线层经由非晶碳化钽的阻挡层形成在基底上。

7. 发明授权

US08794737B2 Inkjet printing apparatus and control method for restore unit 有权
标题翻译：喷墨打印设备和恢复单元的控制方法
公开(公告)号：US08794737B2
公开(公告)日：2014-08-05
申请号：US13169462
申请日：2011-06-27
申请人： Hiroshi Taira , Kiichiro Takahashi , Akiko Maru , Tsukasa Doi
发明人： Hiroshi Taira , Kiichiro Takahashi , Akiko Maru , Tsukasa Doi
IPC分类号： B41J2/165
CPC分类号： B41J2/19 , B41J2/16532 , B41J29/02 , B41J29/38
摘要： An inkjet printing apparatus is provided that is capable of suppressing an increase in discarded ink by a restore operation of a restore unit. The apparatus is an inkjet printing apparatus that prints an image using a print head having a plurality of ejecting ports for ejecting ink and includes a restore unit that restores the ink ejection function of the print head, and a control unit that controls the restore unit so as to perform a restore operation depending on a parameter involving a growth rate of air bubbles existing inside the print head that is filled with ink.
摘要翻译：提供一种喷墨打印装置，其能够通过恢复单元的恢复操作来抑制废墨的增加。该装置是使用具有用于喷射墨水的多个喷射口的打印头来打印图像的喷墨打印装置，并且包括恢复打印头的喷墨功能的恢复单元和控制恢复单元的控制单元以便根据包含存在于填充有墨的打印头内部的气泡的生长速率的参数执行恢复操作。

8. 发明申请

US20120154476A1 SUCTION-BASED RECOVERY CONTROL METHOD AND INK JET PRINTING APPARATUS 有权
标题翻译：基于吸收的恢复控制方法和喷墨打印设备
公开(公告)号：US20120154476A1
公开(公告)日：2012-06-21
申请号：US13316856
申请日：2011-12-12
申请人： Tsukasa Doi , Kiichiro Takahashi , Akiko Maru , Takatoshi Nakano , Hiroshi Taira
发明人： Tsukasa Doi , Kiichiro Takahashi , Akiko Maru , Takatoshi Nakano , Hiroshi Taira
IPC分类号： B41J29/38
CPC分类号： B41J2/04563 , B41J2/0454 , B41J2/16508 , B41J2/16532 , B41J2/19
摘要： The amount of ink wastage is reduced, even in a case wherein a predetermined amount of air bubbles has grown in a print head at a specific internal temperature and the growth has been settled, and thereafter the temperature in the print head is increased. A suction-based recovery control method, for an ink jet printing apparatus that includes a print head, a temperature detection unit, and a suction-based recovery unit, comprising: a temperature detection step; a temperature judgment step for judging whether the internal temperature of the print head is higher than a reference temperature that is determined based on internal temperatures of the print head that were previously employed; and a suction-based recovery step for permitting the suction-based recovery unit when it is determined at the temperature judgment step that the internal temperature of the print head is higher by the predetermined number of degrees or greater.
摘要翻译：即使在特定内部温度下在打印头中生长预定量的气泡并且生长已经稳定的情况下，甚至在打印头中的温度升高之后，也会降低油墨浪费的量。一种用于包括打印头，温度检测单元和基于吸入的回收单元的喷墨打印设备的基于吸入的恢复控制方法，包括：温度检测步骤; 用于判断打印头的内部温度是否高于基于先前使用的打印头的内部温度确定的参考温度的温度判断步骤; 以及基于吸入的回收步骤，用于当在所述温度判断步骤中确定所述打印头的内部温度高预定数量以上时允许所述基于吸入的回收单元。

9. 发明授权

US5459108A Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone 失效
标题翻译：用于通过含氮有机源与臭氧的反应来制造半导体器件的常压CVD工艺
公开(公告)号：US5459108A
公开(公告)日：1995-10-17
申请号：US98927
申请日：1993-07-29
申请人： Tsukasa Doi , Yukiko Mori
发明人： Tsukasa Doi , Yukiko Mori
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/401 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/31608 , Y10S148/118
摘要： There is provided a semiconductor device manufacturing process which enables film deposition at low temperatures and can produce an interlayer insulating film of good quality which exhibits good surface smoothing effect. In the TEOS-O.sub.3 system normal pressure CVD process, film growth is carried out by adding to TEOS source a source containing nitrogen in its composition. For the source is used heptamethyl disilazane (chemical formula (CH.sub.3).sub.3 SiN(CH.sub.3)Si(CH.sub.3).sub.3), N, O-bis-trimethylsilyl acetamide (chemical formula (CH.sub.3)C(OSi(CH.sub.3).sub.3)(NSi(CH.sub.3).sub.3)) or tridimethylamino silane (chemical formula (CH.sub.3).sub.2 N).sub.3 SiN). Also, there is provided a semiconductor device manufacturing method which enables film deposition at a uniform growth rate irrespective of the substrate material and can produce a silicon oxide film of good quality which exhibits good surface smoothing effect. An organic source having an Si--N bond in its composition and O.sub.3 are conducted to the substrate and reacted with each other under normal pressure whereby a silicon oxide film is grown on the substrate. The organic source is, for example, hexamethyl disilazane ((CH.sub.3).sub.3 Si--N(H)--Si(CH.sub.3 ).sub.3).
摘要翻译：提供了一种半导体器件制造方法，其能够在低温下进行成膜，并且可以制造出具有良好的表面平滑效果的高质量的层间绝缘膜。在TEOS-O3系统常压CVD工艺中，通过向TEOS源中加入其组成中含氮的源来进行膜生长。来源是使用七甲基二硅氮烷（化学式（CH 3）3 SiN（CH 3）Si（CH 3）3），N，O-双三甲基甲硅烷基乙酰胺（化学式（CH 3）C（OSi（CH 3）3））3））或三甲基氨基硅烷（化学式（CH 3）2 N）3 SiN）。此外，提供了一种半导体器件制造方法，其与基板材料无关地以均匀的生长速率进行膜沉积，并且可以产生具有良好表面平滑效果的良好质量的氧化硅膜。将其组成中具有Si-N键的有机源和O 3导入基板，并在常压下彼此反应，从而在基板上生长氧化硅膜。有机源是例如六甲基二硅氮烷（（CH 3）3 Si-N（H）-Si（CH 3）3）。

10. 发明授权

US08807726B2 Inkjet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US08807726B2
公开(公告)日：2014-08-19
申请号：US13553451
申请日：2012-07-19
申请人： Tsukasa Doi , Kiichiro Takahashi , Akiko Maru , Takatoshi Nakano , Genji Inada , Satoshi Kimura
发明人： Tsukasa Doi , Kiichiro Takahashi , Akiko Maru , Takatoshi Nakano , Genji Inada , Satoshi Kimura
IPC分类号： B41J2/19 , B41J2/045 , B41J2/195 , B41J2/175
CPC分类号： B41J2/04563 , B41J2/0458 , B41J2/16532 , B41J2/1752 , B41J2/17553 , B41J2/17566 , B41J2/195 , B41J29/38
摘要： An inkjet recording apparatus capable of determining an amount of bubbles in an ink flow path and performing suction recovery operation at an appropriate timing is provided. The inkjet recording apparatus includes a recording head including a nozzle for discharging ink and a flow path forming member forming an ink flow path for supplying the ink to the nozzle, a suction unit configured to suck the ink from the recording head, and a temperature detection unit configured to detect a temperature in the recording head. The inkjet recording apparatus includes a control unit configured, based on an amount of gas in the flow path forming member before the ink is filled in the ink flow path, and an amount of gas in equilibrium in the flow path forming member after the ink is filled in the ink flow path, to control the operation of the suction unit.
摘要翻译：提供一种能够确定油墨流路中的气泡量并在适当的时刻进行抽吸恢复操作的喷墨记录装置。喷墨记录装置包括：记录头，其包括用于排出墨的喷嘴;以及流路形成构件，形成用于将墨水供应到喷嘴的墨流路;流动单元，被配置为从记录头吸取墨;以及温度检测被配置为检测记录头中的温度的单元。喷墨记录装置包括控制单元，该控制单元基于墨水填充在墨水流路中之前的流路形成构件中的气体量，以及在墨水之后的流路形成构件中的气体平衡量填充墨水流路，以控制抽吸单元的操作。

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