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1. 发明授权

US4995111A Ring trip circuit for subscriber telephone 失效
标题翻译：用户电话的环路跳闸电路
公开(公告)号：US4995111A
公开(公告)日：1991-02-19
申请号：US320297
申请日：1989-02-21
申请人： Toshiro Tojo , Kenji Takato , Kazumi Kinoshita , Yuzo Yamamoto , Yozo Iketani , Shin-ichi Ito
发明人： Toshiro Tojo , Kenji Takato , Kazumi Kinoshita , Yuzo Yamamoto , Yozo Iketani , Shin-ichi Ito
IPC分类号： H04M19/02
CPC分类号： H04M19/026
摘要： An improved ring trip circuit for a subscriber telephone, for detecting an on-hook state or an off-hook state of the telephone. The ring trip circuit can be formed in a small size and can be formed by a LSI. The ring trip circuit includes a voltage detecting circuit (2), for detecting a voltage difference (.DELTA.V) between both ends of a ringer sending resistor, having a first circuit (S1, S2, A1.about.B3) converting the voltage difference to a current difference, and further having a second circuit (F) converting the current difference to a voltage, the voltage difference varying in response to the on-hook state or the off-hook state of the telephone, and a state detecting circuit (3) for detecting the on-hook state or the off-hook state in response to a value of the voltage from the voltage detecting circuit. The voltage detecting circuit is formed by a plurality of current mirror circuits, each of which includes at least two transistors. The state detecting circuit includes a comparator circuit (CP1) formed by a plurality of transistors.
摘要翻译： PCT No.PCT / JP88 / 00607 Sec。 371日期1989年2月21日 102（e）日期1989年2月21日PCT Filed 1988年6月18日PCT Pub。出版物WO88 / 10542 日期为1988年12月29日。一种用于用户电话的改进的环路跳闸电路，用于检测电话的挂机状态或摘机状态。环形跳闸电路可以形成为小尺寸并且可以由LSI形成。环路跳闸电路包括电压检测电路（2），用于检测振铃发送电阻器两端之间的电压差（DELTA V），该电路具有将电压差转换为a的第一电路（S1，S2，A1差分B3）并且还具有将电流差转换为电压的第二电路（F），所述电压差响应于电话的挂机状态或摘机状态而变化，以及状态检测电路（3）用于响应于来自电压检测电路的电压的值来检测挂机状态或摘机状态。电压检测电路由多个电流镜电路形成，每个电流镜电路包括至少两个晶体管。状态检测电路包括由多个晶体管形成的比较器电路（CP1）。

2. 发明授权

US5627626A Projectin exposure apparatus 失效
标题翻译：投影仪曝光装置
公开(公告)号：US5627626A
公开(公告)日：1997-05-06
申请号：US468327
申请日：1995-06-06
申请人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
发明人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70066 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70333
摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. A special stop is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source so that intensities of both peripheral and central portions are larger than an intensity of an intermediate portion. In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.TO
摘要翻译：投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统以及用于将透过该掩模版的光投射到晶片上的投影光学系统。布置特殊停止点作为均匀照明面罩的次要源。特殊止挡用于设定次级源的出射平面内的强度分布，使得外周和中心部分的强度大于中间部分的强度。此外，该装置包括半透明掩模，该半色调掩模允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×D0或= T <= 0.30×YTO。通过透光性基板的光的相位差由180×（2n + 1）+或-30（度）（n为整数）表示。

3. 发明授权

US5631109A Exposure mask comprising transparent and translucent phase shift patterns 失效
标题翻译：曝光掩模包括透明和半透明的相移图案
公开(公告)号：US5631109A
公开(公告)日：1997-05-20
申请号：US477594
申请日：1995-06-07
申请人： Shin-ichi Ito
发明人： Shin-ichi Ito
IPC分类号： G03F1/30 , G03F1/32 , C03F9/00
CPC分类号： G03F1/32 , G03F1/30
摘要： An exposure mask is formed by providing a mask pattern including a transparent phase shift pattern and a translucent phase shift pattern on a light-transmissive substrate. Each of the transparent phase shift pattern and the translucent phase shift pattern causes a relative phase difference of 180.degree. to exposure light passing through each of the transparent phase shift pattern against exposure light passing through the light-transmissive substrate and the translucent phase shift pattern. The transparent phase shift pattern and the translucent phase shift pattern partly overlap each other. At least one opening portion in the mask pattern has at an adjacent region an overlap region of the transparent phase shift pattern and the translucent phase shift pattern region. A region of the translucent phase shift pattern is provided on the outside of the overlap region.
摘要翻译：通过在透光性基板上设置包括透明相移图案和透光相移图案的掩模图案，形成曝光掩模。透明相移图案和半透明相移图案中的每个相对于通过透明相移图案中的每一个的曝光光抵抗穿过透光基板的曝光光和透光相移图案，导致相对相位差180°。透明相移图案和半透明相移图案部分地彼此重叠。掩模图案中的至少一个开口部分在相邻区域处具有透明相移图案和半透明相移图案区域的重叠区域。半透明相移图案的区域设置在重叠区域的外侧。

4. 发明授权

US5536604A Exposure mask 失效
标题翻译：曝光面膜
公开(公告)号：US5536604A
公开(公告)日：1996-07-16
申请号：US377249
申请日：1995-01-24
申请人： Shin-ichi Ito
发明人： Shin-ichi Ito
IPC分类号： G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/26 , G03F1/32
摘要： An exposure mask according to the invention comprises a light-transmissive substrate, and mask patterns formed on the light-transmissive substrate, and including transparent phase shift patterns and translucent phase shift patterns, each of the translucent phase shift patterns having a phase difference of at least 180.degree. for exposure light corresponding to an optical path difference between a transparent portion of the light-transmissive substrate and a transparent portion of the transparent phase shift pattern, the transparent phase shift patterns and translucent phase shift patterns overlapping with each other, wherein the mask patterns include pattern groups each having a first region consisting of an exposed portion of the light-transmissive substrate, a second region adjacent to the first region, in which only a corresponding one of the translucent phase shift patterns exists, a third region adjacent to the second region, in which a corresponding one of the transparent phase shift patterns is laminated on the corresponding translucent phase shift pattern, and a fourth region adjacent to the third region, in which only the corresponding transparent phase shift pattern exists.
摘要翻译：根据本发明的曝光掩模包括透光基板和形成在透光基板上的掩模图案，并且包括透明相移图案和半透明相移图案，每个半透明相移图案具有相位差为对应于透光基板的透明部分和透明相移图案的透明部分之间的光程差的曝光光，至少180°，透明相移图案和半透明相移图案彼此重叠，其中掩模图案包括图案组，每个图案组具有由透光性基板的曝光部分构成的第一区域，与第一区域相邻的第二区域，其中仅存在相应的一个半透明相移图案;第三区域，第二区域，其中相应的一个透明相移 t图案层叠在相应的半透明相移图案上，以及与第三区域相邻的第四区域，其中仅存在相应的透明相移图案。

5. 发明授权

US5707501A Filter manufacturing apparatus 失效
标题翻译：过滤器制造装置
公开(公告)号：US5707501A
公开(公告)日：1998-01-13
申请号：US467600
申请日：1995-06-06
申请人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
发明人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
IPC分类号： G03F7/20 , C23C14/34
CPC分类号： G03F7/70066 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70333
摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions. A translucent pattern is formed as the mask on a light-transmitting substrate. The phase difference between light passing through the translucent film and light passing through the light-transmitting substrate is represented by 180.times.(2n+1).+-.30 (degree) (where n is an integer). In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.T0.ltoreq.T.ltoreq.0.30.times.T0. Furthermore, a projection exposure apparatus is provided, in which a light source and a secondary source is coupled to each other through fibers, and an optical modulator is inserted therebetween so that the spatial distribution of light amounts can be electrically and optically controlled.
摘要翻译：投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统以及用于将透过该掩模版的光投射到晶片上的投影光学系统。该设备被设计成通过投影光学系统将形成在掩模上的预定掩模图案投影/曝光到晶片上。布置特殊停止（即，四眼滤波器）作为用于均匀照明面罩的次级源。特殊停止用于设定次级源的出射平面内的强度分布，使得围绕次级光源的光轴四倍对称的四个区域的强度高于其他区域的强度。在透光性基板上形成作为掩模的半透明图案。通过透光性膜的光和通过透光性基板的光的相位差由180×（2n + 1）+/- 30（度）（n为整数）表示。此外，该设备包括半透明掩模，其允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×T0≤T≤0.30×T0。此外，提供一种投影曝光装置，其中光源和次级光源通过光纤彼此耦合，并且光学调制器插入其间，使得光量的空间分布可以被电和光学地控制。

6. 发明授权

US5621498A Projection exposure apparatus 失效
标题翻译：投影曝光装置
公开(公告)号：US5621498A
公开(公告)日：1997-04-15
申请号：US411844
申请日：1995-03-28
申请人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
发明人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
IPC分类号： G03F7/20 , G03C5/00
CPC分类号： G03F7/70066 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70333
摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions. A translucent pattern is formed as the mask on a light-transmitting substrate. The phase difference between light passing through the translucent film and light passing through the light-transmitting substrate is represented by 180.times.(2n+1).+-.30 (degrees) (where n is an integer). In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.T0.ltoreq.T.ltoreq.0.30.times.T0. Furthermore a projection exposure apparatus are provided, in which a light source and a secondary source is coupled to each other through fibers, and an optical modulator is inserted therebetween so that the spatial distribution of light amounts can be electrically and optically controlled.
摘要翻译：投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统以及用于将透过该掩模版的光投射到晶片上的投影光学系统。该设备被设计成通过投影光学系统将形成在掩模上的预定掩模图案投影/曝光到晶片上。布置特殊停止（即，四眼滤波器）作为用于均匀照明面罩的次级源。特殊停止用于设定次级源的出射平面内的强度分布，使得围绕次级光源的光轴四倍对称的四个区域的强度高于其他区域的强度。在透光性基板上形成作为掩模的半透明图案。通过透光性膜的光与通过透光性基板的光的相位差由180×（2n + 1）+/- 30（度）（n为整数）表示。此外，该设备包括半透明掩模，其允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×T0≤T≤0.30×T0。此外，提供了一种投影曝光装置，其中光源和次级光源通过光纤彼此耦合，并且光学调制器插入其间，使得光量的空间分布可以被电和光学地控制。

7. 发明授权

US5700605A Mask for light exposure and process for production of the same 失效
标题翻译：面罩用于曝光和生产的过程相同
公开(公告)号：US5700605A
公开(公告)日：1997-12-23
申请号：US616306
申请日：1996-03-15
申请人： Shin-ichi Ito , Takayuki Iwamatsu
发明人： Shin-ichi Ito , Takayuki Iwamatsu
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , G03F1/84 , G03F1/86 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/32
摘要： There is disclosed a mask for light exposure which comprises being provided with a light transparent substrate and a mask pattern formed on the light transparent substrate, the mask pattern comprising a light screening pattern composed of a material which screens the exposure light and transmits the light having the longer wavelength than that of the exposure light and a phase shift pattern formed by engraving a part of the light transparent substrate.
摘要翻译：公开了一种用于曝光的掩模，其包括设置有透光基板和形成在透光基板上的掩模图案，掩模图案包括由屏蔽曝光光的材料构成的遮光图案，并透射具有比曝光光的波长长，通过雕刻一部分透光性基板而形成的相移图案。

8. 发明授权

US5409789A Exposure mask comprising translucent and transparent phase shifters 失效
标题翻译：曝光掩模包括半透明和透明移相器
公开(公告)号：US5409789A
公开(公告)日：1995-04-25
申请号：US091357
申请日：1993-07-15
申请人： Shin-ichi Ito
发明人： Shin-ichi Ito
IPC分类号： G03F1/30 , G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32
摘要： This invention provides an exposure mask having mask patterns formed on a transparent substrate, the mask patterns including translucent phase shift patterns having a light path length for exposure light differentiated by 180.degree. from that of transparent areas of said transparent substrate and transparent phase shift patterns. Such an exposure mask can be advantageously used to realize highly defined patterns.
摘要翻译：本发明提供了一种具有形成在透明基板上的掩模图案的曝光掩模，该掩模图案包括具有与所述透明基板的透明区域相差180°的曝光光的光路长度的透光相移图案和透明相移图案。这样的曝光掩模可以有利地用于实现高度限定的图案。

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